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Dye-sensitized solar cells (DSCs) still need wider absorption range despite their stable and good performance. This work proposed the co-sensitization of Si quantum dot (QD) and N749 dye for better photo-generation. Si QD was chemically stable with regard to all DSC components and its stability enabled to co-sensitize with dye. Si QDs were fabricated by multihollow discharge plasma chemical vapor deposition and applied for the co-sensitization. Si and dye co-sensitization led to the increase of incident photon to current conversion efficiency and decrease of internal impedance as compared with a standard DSC. As a result, short-circuit current density was increased over 1 mA/cm2 and the performance was enhanced with co-sensitization from 4.36 to 5.10%. Si and dye co-sensitization was very effective because the enhancement was much larger than the performance of Si QDSC without dye sensitization. [ABSTRACT FROM AUTHOR]