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Abstract: Using molecular dynamics, nudged elastic band and modified analytic embedded atom methods, the diffusion behaviors of Pd adatom on stepped Pd(001) surface have been investigated. Lower than 975K, Pd adatom just hops along the perfect [110]-direction step. The diffusion dynamics equation is derived from the Arrhenius law between 875 and 975K, and the corresponding migration energy and prefactor are 0.76eV and 5.2×10−2 cm2/s respectively, which shows that they adhere to the step in case of adatom moving to the step. The adatom diffuses across the perfect step with an Ehrlich–Schwoebel barrier of 0.09eV by exchange mechanism. Our calculations show the kink at step can markedly decrease the static energy barrier across the step with a negative Ehrlich–Schwoebel barrier, and it contributes to form layer-by-layer growth model in the epitaxial experiment. Our calculations show that the kink can also markedly improve the adatom's mass transport of interlayer, contributing to the formation of the compact film. Lastly, a quantitative result at 300K shows that the kink affects tremendously the diffusion mobility of adatom near it, which indicates that the kink plays a key role in the formation of the compact and uniform film on Pd(001) surface in an epitaxial growth experiment. [Copyright &y& Elsevier]

The initial stage of film growth during plasma deposition on polymers determines many film properties such as morphology and structure, interphase formation and adhesion. Therefore, the plasma-substrate interaction is investigated regarding the energy density during film growth, which is defined by the energy flux per depositing atom. The flux of film-forming species and the flux of energetic particles were determined for metal sputtering (silver films) and plasma polymer deposition (amino-functional hydrocarbon films). It is shown that enhanced energy densities can be obtained during the initial film growth due to reduced deposition rates and mixing with the polymer substrate (interphase formation). Thus, good adhesion on polymers such as polyethylene terephthalate (PET) has been achieved. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Highlights: [•] CZTS films were fabricated by sulfurizing the fabricated precursor films. [•] Annealing time and temperature are very important for synthesis of pure CZTS films. [•] Pure CZTS films with high quality can prepared at 500°C and 90min. [•] Both high temperature and long heating time causes the decomposition of CZTS films. [ABSTRACT FROM AUTHOR]

Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 μm/h on silicon, and 4 μm/h on Ti-6Al-4V were achieved. In a chemistry of H2/CH4/N2, varying ratios of CH4/H2 and N2/CH4 were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N2/CH4 ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp3 bonded carbon. [ABSTRACT FROM AUTHOR]

Highlights: [•] A new single-pot-synthesis for fabricating mesoporous silica films is described. [•] The films consist of a monolayer of short SBA-15 rods grown on Si-wafers. [•] The pores are easily accessed, and their size can be tuned between 10.7 and 13.9nm. [•] The formation of the films resembles the evolution of rods formed in the solution. [Copyright &y& Elsevier]

Abstract: Single layer and dual layer (AlxCr1−x)2O3 coatings were synthesised by cathodic arc evaporation with different Al contents to study their growth characteristics. It was demonstrated that variations in the Al content, the energy of incident particles and the coating thickness control the crystallinity and the coating texture. Analysis by X-ray diffraction revealed a distinct (110) out of plane orientation after transition from a fine grained nucleation zone to a columnar growth mode. Furthermore, the impact of (AlxCr1−x)2O3 seed layers with x=0.25 and 0.5 on the growth of (AlxCr1−x)2O3 top layers with x=0.7 and 0.85 was evaluated in detail. According to X-ray diffraction and transmission electron microscopy, the development of the corundum-type crystal structure of the top layer was promoted by local epitaxy if the low Al containing seed layer exhibited a pronounced columnar structure. In this way, crystalline corundum-type coatings with an Al content up to x=0.85 were obtained. [Copyright &y& Elsevier]

Highlights: [•] Surface dynamics and interface behavior of Mo/Si multilayers grown on flat and saw-tooth substrates have been investigated using Linear Continuum Model. [•] Optimal balance between roughening and smoothing processes was found. [•] Highly conformal growth of Mo/Si multilayers on saw-tooth substrates has been achieved. [•] Blazed gratings coated with the optimized multilayer demonstrated record diffraction efficiency in EUV and soft X-rays. [ABSTRACT FROM AUTHOR]

Highlights: [•] Growth of thin layers of PDI8-CN2. [•] In situ monitoring of optical absorbance during film growth. [•] Spectral shifts modeled by coupling of transition dipole moments. [•] Correlation of findings with molecular structure and orientation in the lattice. [•] Dominance of intralayer vs. interlayer coupling. [ABSTRACT FROM AUTHOR]

Abstract: The development of depth gradients of texture, morphology and stresses in thin nanocrystalline films was experimentally demonstrated for a nanocrystalline CrN film by means of position-resolved synchrotron X-ray nanodiffraction and explained by atomistic processes at the growing film surface and the effect of interfaces, both controlled by the deposition conditions. Controllable changes in the energy of incident particles adjusted by bias voltages ranging from −40 to −120V affect the competitive growth of grains with different orientations, induce disruption of grain growth and thus give rise to structural variations across the film thickness. Subsequent changes in the volume fraction of grain boundaries and film texture were found to be responsible for changes in the residual stress state as defect generation proceeds to different extents in the interior of differently oriented grains and in the interfacial area. While the defect density predominantly affects the development of intrinsic stress, the variation in the number of weakly bonded atoms of grain boundaries determines the thermal stress component. The structural dependence of both stress components thus contributes to the characteristic development of stress gradients in thin nanocrystalline films. [Copyright &y& Elsevier]

Highlights: [•] Regulation of secondary synthesis for tuning the zeolite film microstructure. [•] Continuous and stable mordenite films onto microcorrugated FeCralloy foils. [•] Film activation with highly dispersed Cu and Ce phases. [•] Cu,Ce/mordenite/FeCralloy-based microreactors for CO oxidation. [Copyright &y& Elsevier]

Highlights: [•] Poly-l-lysine deposition onto Pt under anodic conditions. [•] Studied with electrochemical quartz crystal microbalance. [•] Change in deposition mechanism observed within first hour. [•] Measurement possible, even when complicated by electrolysis of water. [ABSTRACT FROM AUTHOR]

Abstract: We have used scanning tunneling microscopy to probe the effect of oxygen exposure on an ensemble of Ag islands separated by a Ag wetting layer on Si(111)-7×7. Starting from a distribution dominated by islands that are 1 layer high (measured with respect to the wetting layer), coarsening in ultrahigh vacuum at room temperature leads to growth of 2-layer islands at the expense of 1-layer islands, which is expected. If the sample is exposed to oxygen, 3-layer islands are favored, which is unexpected. There is no evidence for oxygen adsorption on top of Ag islands, but there is clear evidence for adsorption in the wetting layer. Several possible explanations are considered. [Copyright &y& Elsevier]

To validate the correctness of the Hartman-Perdok Theory (HPT), which indicates that the {111} planes have the lowest surface energy in spinel ferrites, the {111} plane orientated ZnFeO thin films on Si(100), Si(111), and SiO(500 nm)/Si(111) substrates were obtained through a radio frequency (RF) magnetron sputtering method with a low sputtering power of 80 W. All of the experiments prove that the atom energy determined by sputtering power plays an important role in the orientated growth of the ZnFeO thin films, and it matches well with HPT. The ZnFeO thin films exhibit ferromagnetism with a magnetization of 84.25 kJ/mol at room temperature, which is different from the bulk counterpart (antiferromagnetic as usual). The ZnFeO thin films can be used as high-quality oriented inducing buffer layers for other spinel (Ni, Mn)Zn ferrite thin films and may have high potential in magnetic thin films-based devices. [ABSTRACT FROM AUTHOR]

Abstract: We made Cu2ZnSnS4 (CZTS) thin films by sulfurization of Cu/Sn/Cu/Zn metallic films. Sulfurizations were carried out under different thermal annealing conditions, where maximum temperatures were 440 °C (LT-CZTS) and 550 °C (HT-CZTS). For LT-CZTS films, secondary phases such as SnS2 and Cu2−x S were observed, whereas for HT-CZTS films secondary impurities were not detected. Chemical composition of LT-CZTS film was observed to be very non-uniform. Highly Sn-rich and Zn-rich regions were found on the film surface of LT-CZTS. However, averaged chemical composition for larger area was close to stoichiometry. The HT-CZTS film showed homogeneous structural and chemical composition features. But, for HT-CZTS film, the Sn composition was observed to be decreased, which was due to the Sn-loss. By UV–Visible spectroscopy, optical band gaps of LT- and HT-CZTS films were measured to be ∼1.33 eV and ∼1.42 eV, respectively. The band gap of LT-CZTS film was also observed to be smaller by photoluminescence measurement. The depressed band gap of LT-CZTS film may be ascribed to some defects and low band gap impurities such as Cu2SnS3 and Cu2-xS in the LT-CZTS film. [Copyright &y& Elsevier]

Abstract: We report the results of a Surface X-Ray Diffraction (SXRD) study of Fe nanostructured films deposited on c(2×2)-N/Cu(100) at room temperature (RT), with Fe coverage ΘFe =0.5ML and ΘFe =1ML. The c(2×2)-N/Cu(100) surface is an example of self-organised system, that can be used for growth of arrays of metal nano-islands and organic molecules assemblies. We chose two different values of N coverage, ΘN =0.3ML and ΘN =0.5ML, the second value corresponding to N saturation. We monitored the presence of surface diffraction peaks in hk scans and we performed Crystal Truncation Rods (CTR) analysis with ROD fitting programme. In the case of ΘN =0.5ML, i.e. at saturation coverage, the CTR could be fitted with one surface domain with p4gm(2×2) symmetry. In the surface cell adopted, N atoms occupy four-fold hollow sites, with Fe (intermixed with Cu) giving rise to a “clock” reconstruction previously observed on iron nitride films obtained by co-deposition and annealing. This result is an indirect confirmation of N surface segregation on top of the Fe films, occurring during the growth at RT. When subsaturation N coverage (ΘN =0.3ML) is used as a substrate for Fe deposition, the best results could be obtained with a model where two surface domains are present: the first one corresponds to a surface cell with Fe sitting in four-fold hollow sites on bare Cu areas, with possible interdiffusion in the second lattice. The second domain is assigned to growth of Fe on the N-covered square islands occurring once the bare Cu areas are fully covered. The SXRD analysis on N-covered surface domains shows that the mechanism of reconstruction and of N segregation on top layer is already active at RT for all N-coverage values. [Copyright &y& Elsevier]

Abstract: In this work, the synthesis of self-supported layers over mercury was carried out. Influence of the amount of water, TPA+, OH− and Na+ in the precursor gel was investigated for this kind of synthesis. Layers were characterized by X-ray diffraction to study their crystallographic structure, scanning electron microscopy to determine their thickness and crystal properties, and mercury porosimetry for the determination of layer density. [Copyright &y& Elsevier]

Abstract: Fe(Se1− x Te x ) thin films on (100) SrTiO3 were fabricated by a pulsed laser deposition method, and their crystal orientation, compositional shifts and superconducting properties were characterized by X-ray diffraction, scanning electron microscope combined with energy dispersive X-ray spectroscopy, etc. Compositional shift is one of the major problems during the fabrication of Fe(Se1− x Te x ) films due to its containing high volatile elements such as Se and Te. The compositional shifts were found dependent on the Ar background gas pressure (P Ar), which was suppressed by the increase of P Ar. In addition, it was revealed that the temperature window for the crystallization of the films was shifted to higher temperature region and wider temperature range with the increase of P Ar. [Copyright &y& Elsevier]

Abstract: Epitaxial multiferroic BiFeO3 thin films were grown on SrTiO3 substrates by the hydrothermal method at 200 °C in aqueous solutions of 6–12 M KOH. Films grown at 9 M were the most coalesced with a dense and island-like morphology. It was also the most well aligned film with a full width at half maximum of 0.436. Irrespective of whether the substrates for the 9 M KOH condition were in the face-up and face-down configuration, all films grew epitaxially in the [100] directions. However, films grown in the face-up configuration contained BiFeO3 nanoparticles on the film surfaces. [Copyright &y& Elsevier]

This article reports the effect of addition of small amount of thiourea on mechanism of film growth, levelling and grain refinement of pulsed electrodeposition of nanocrystalline copper on stainless steel substrate using simple aqueous acidic copper sulphate solution prepared from 0.25 M CuSO·5HO and 0.5 M HSO. The amount of thiourea used in the electrolyte is 0 and 36 mg/l. The results indicate the change in morphology of the deposits with addition of thiourea leading to dendrite free copper deposits. The growth mechanism of the copper deposition is found to change from Volmer-Weber type to Frank-Vander Merwe type making the deposits smoother when deposited with thiourea addition. A small amount (36 mg/l) of thiourea addition leads to decrease in the average grain size of copper from 1160 nm to 14 nm. The results clearly reveal the formation of nanocrystalline copper by addition of thiourea with three orders of magnitude reduction in grain size as compared to the sample deposited without thiourea. Preferential segregation of sulphur (present in thiourea) along the grain boundaries of nanocrystalline copper is shown by energy filter imaging using ultra high resolution transmission electron microscope (TEM), thereby restricting the growth of copper grains during pulsed electrodeposition. [ABSTRACT FROM AUTHOR]

Abstract: Electrochemical, metal-centred partial oxidation of the electrodeposited d8 Ru–Ru bonded chain [Ru0(bpy)(CO)2] n results in high electrical conductivity on the order of 10−1 Scm−1. The partial oxidation of Ru0 is reversible in presence of charge-compensating and anions, and quartz crystal microbalance data show that the doping/undoping process is accompanied with transfer of unsolvated electrolyte anions. For and Cl− the process is more complex and in the chloride-case the doping results in break-up of the polymer film. The conductivity of the film is linearly dependent on the electrochemically controlled doping level. Spectroscopic evidence for charge delocalisation is obtained in the near-IR region, with the absorbance proportional to the doping level. The conduction process is thermally activated and ohmic behaviour is found for films both in electrolyte and gas phase. The microscopic structure of dry polymeric films is studied by SEM and anisotropic growth of cone-shaped columns is found. Linear increase in film thickness with deposition charge is obtained above 20μm with a volume yield corresponding to a density 90% of the X-ray diffraction derived value reported in literature. [Copyright &y& Elsevier]

Abstract: The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification. [Copyright &y& Elsevier]

Abstract: Films of F16PcCu prepared by physical vapor deposition under high vacuum conditions were characterized from the monolayer range up to 40nm thickness. The charge carrier mobility in the saturation regime of the output characteristics and the threshold voltage as well as the on/off-ratio were determined during film preparation. The substrate consisted of a n++-doped Si wafer as gate electrode with a thermally grown SiO2 layer as gate dielectric and photolithographically structured films of gold or silver as source and drain electrodes. F16PcCu formed a conductive channel in the interface region at about 2nm average film thickness. In the subsequent regime of layer formation up to about 8nm a constant charge carrier mobility was established. The threshold voltage considerably decreased during this period of growth and reached a stable level. Subsequent island formation on top of this channel led to only minor changes in the transistor characteristics although the conductivity along the complete organic thin film decreased considerably. By such in situ characterization different contributions of interfacial and bulk transport could be determined and used to optimize films to be used in organic field effect transistors. Ultrathin films of F16PcCu further showed a considerably faster stabilization of the mobility upon exposure to air, the highest on/off ratios and therefore provide clear advantages for device applications. [Copyright &y& Elsevier]

Abstract: The structure of tetrahedral bonded amorphous carbon (ta-C) is determined by the energy of the impinging carbon ions, the angle of incidence, the substrate temperature and the deposition rate. Up to now modeling of the ta-C growth was concentrated on the energy effects by investigating the early stages of the ion impact and the short-time relaxation in the thermal spike. A new analytical model is presented, which emphasizes the role of long-time diffusion, driven by the stress induced drift towards the surface. In accordance with the experimentally found trends, the model allows the estimation of the sp3 content in dependence on the technological relevant deposition parameters ion energy, angle, temperature, rate and their distributions. This opens the way for the realistic simulation of ta-C growth in industrial coaters. [Copyright &y& Elsevier]

Abstract: The growth of thin TiN films on the TiN(001) surface during reactive sputtering was simulated by molecular dynamics with the modified embedded-atom method potential. TiN3 is found to be the smallest epitaxial island and the film grows via the layer mode. Vacancy concentration in the deposited films decreases with increasing the substrate temperature and kinetic energy of incident atoms, resulting from the enhancement of the thermal diffusion and kinetic energy assisted athermal diffusion. To get the stoichiometric TiN film, the N:Ti flux ratio should be larger than unity and be increased with higher incident energy due to the weak adsorption of atomic N on TiN(001). [ABSTRACT FROM AUTHOR]

Abstract: Molecular dynamics simulations of the sputtering process of silicon by Ar atoms in the low energy range, 20eV–1000eV, were performed using the IMD software package and the commercial software Materials Explorer 4.0 from Fujitsu Ltd. with the combination of the Tersoff potential and the Ziegler–Biersack–Littmrk (ZBL) potential in order to get more insight into the sputter process itself and to extract data comparable to experiments. The analysis of the sputter yield as a function of argon impact energy, surface impact coordinate and of crystal orientation was performed. These simulation results were compared with experimental values as determined by Ar ion etching in a microwave plasma and measurement of the etch depth and etch time. A good agreement between experiments and simulations was found. Physical parameters such as binding energy of the Si (001) surface, vacancy energy and vacancy migration energy were also determined in order to explain the simulation results of the sputter process. Finally, the coating process of a silicon substrate by Si atoms was simulated using the Si sputter results as input parameters. [ABSTRACT FROM AUTHOR]

Cadmium sulfide (CdS) thin films have been deposited on glass/conducting glass substrates using low-cost chemical bath deposition method. The deposited films have been characterized using various techniques in order to optimize growth parameters. It has been confirmed by X-ray diffraction measurement that the deposited layers are mainly consisting of CdS phase. The PEC measurements indicate that the deposited CdS layer is n-type in electrical conduction, and optical absorbance measurements show that the band gap is 2.42 eV for as-deposited film and 2.27 eV upon heat treatment for one hour in air ambient. Both atomic force microscopy and scanning electron microscopy measurements indicate the formation of pinhole free and smooth surface of CdS films of nanosized grains. The electrical resistivity is also observed in the order of 1044 Ω cm and decreases as temperature increases. [ABSTRACT FROM AUTHOR]

In this study, we investigated the effects of different heating processes on the structural, electrical and chemical properties of ZnO:Ga (GZO) films from the viewpoint of nucleation and growth behaviors. An infrared heating furnace and a traditional tube furnace were employed for the homogeneous and heterogeneous nucleation of GZO films. XRD patterns demonstrated that the preferential growth orientation of both kinds of GZO films is still the (002) direction. XPS data implied that the infrared heating process enables more uniform distribution of the dopant material and retards the oxidization of gallium in grain boundary areas. At the same time, the textured crystallite might provide a free tunnel for oxygen diffusion. Thus, the activation of free charge carriers could be more efficient when the GZO films were annealed under vacuum. As a result, the samples annealed by the infrared heating furnace had a noticeably high carrier concentration. Although the mobility was slightly smaller than that of the samples annealed by the tube furnace, film resistivity dropped obviously in general. [ABSTRACT FROM AUTHOR]

The measured peak shape and intensity of the photoemitted signal in X-ray photoelectron spectroscopy (XPS) experiments (elastic and inelastic parts included) are strongly correlated, through electron-transport theory, with the depth distribution of photoelectron emitters within the analyzed surface. This is the basis of so-called XPS peak-shape analysis (also known as the Tougaard method) for non-destructive determination of compositional in-depth (up to 6–8 nm) profiles. This review describes the theoretical basis and reliability of this procedure for quantifying amounts and distributions of material within a surface. The possibilities of this kind of analysis are illustrated with several case examples related to the study of the initial steps of thin-film growth and the modifications induced in polymer surfaces after plasma treatments. [Figure not available: see fulltext.] [ABSTRACT FROM AUTHOR]

X-ray photoelectron spectroscopy (XPS) is one of the main methods for elemental and bonding-state characterization in the near-surface region. Applying it as angle-resolved XPS (ARXPS), it is promising for non-destructive depth profiling in the nanometre-thickness range. The challenges for the application of ARXPS are discussed for the early film growth of Ti and Ta on SiO2 produced by in situ magnetron sputtering. The measurements showed several phase-formation processes at the interfaces, which were used as the basis for the ARXPS data analysis and resulted in different interlayer growth information for Ti and Ta. From a systematic ARXPS data interpretation in combination with simulations, limits of the method are critically discussed. [Figure not available: see fulltext.] [ABSTRACT FROM AUTHOR]

Abstract: In order to understand the origin of the residual stress state in thin films and its thickness dependence, the structure–stress relation of magnetron-sputtered Cr and CrN layers with thicknesses ranging from 100nm to 3μm was investigated in detail. Based on correlations between the layer-thickness-dependent grain size, texture and morphology and the magnitude of the intrinsic and thermal components of the residual stress, a model is proposed that explains the origin of internal stresses of thin polycrystalline films with zone T structures. The model was further extended for the CrN/Cr dual-layer system, where the CrN top layer is epitaxially aligned with the underlying highly (200)-oriented Cr interlayer. It is shown for the first time that both the intrinsic and thermal stress components are thickness-dependent, which is associated with the layer microstructure. [Copyright &y& Elsevier]

X-ray photoelectron spectroscopy (XPS) is one of the main methods for elemental and bonding-state characterization in the near-surface region. Applying it as angle-resolved XPS (ARXPS), it is promising for non-destructive depth profiling in the nanometre-thickness range. The challenges for the application of ARXPS are discussed for the early film growth of Ti and Ta on SiO2 produced by in situ magnetron sputtering. The measurements showed several phase-formation processes at the interfaces, which were used as the basis for the ARXPS data analysis and resulted in different interlayer growth information for Ti and Ta. From a systematic ARXPS data interpretation in combination with simulations, limits of the method are critically discussed. [Figure not available: see fulltext.] [ABSTRACT FROM AUTHOR]

Abstract: In the present study TiO2 films were deposited by spray pyrolysis method onto ITO covered glass and Si (100) substrates. The spray solution containing titanium(IV) isopropoxide, acetylacetone and ethanol was sprayed at a substrate temperature of 450°C employing 1–125 spray pulses (1s spray and 30s pause). According to AFM, continuous coverage of ITO and Si substrates with TiO2 layer is formed by 5–10 and below 5 spray pulses, respectively. XPS studies revealed that TiO2 film growth on Si substrate using up to 4 spray pulses follows 2D or layer-by-layer-growth. Above 4 spray pulses, 3D or island growth becomes dominant irrespective of the substrate. Only 50 spray pulses result in TiO2 layer with the thickness more than XPS measurement escape depth as any signal from the substrate could not be detected. TiO2 grain size remains 30nm on ITO and increases from 10–20nm to 50–100nm on Si substrate with the number of spray pulses from 1 to 125. [Copyright &y& Elsevier]

Molecular dynamics simulation was used to study the influence of a relative size of adsorbed and substrate atoms on the stress of growing films. Atoms in the system interact via the Lennard-Jones potential. The simulations were performed at a fixed value of systems temperature. The relative size of deposited atoms was changed in the range from 0.7 to 1.2, relatively to the size of substrate atoms. Proposed modeling allows to explain the behaviour of mean biaxial stress for systems with different sizes of adsorbed atoms and a substrate. For considered systems, significant changes in mean biaxial stress have only first three monolayers. [ABSTRACT FROM AUTHOR]

Abstract: CuInSe2 films were prepared at different deposition temperatures (T D) by successive ionic layer adsorption and reaction method with chelating solutions. Influence of T D on film growth, morphology, crystal structure, and band gap energy was investigated. Results showed that elevation of T D mainly enhanced reaction kinetics and ionic diffusion velocity, resulting in fast growth rate of CuInSe2 films, and maximum 20–30 nm/cycle depended upon T D were acquired. Films with 60 dip-cycles could grow from 180 nm to 1000 nm by elevating T D from 30 °C to 90 °C. Surface roughness of CuInSe2 films was closely related to dip-cycle times and T D. Accelerated growth rate by T D could reduce the dip-cycle times for a required film thickness, which improved quality of film morphology. [Copyright &y& Elsevier]

Abstract: In this paper, we present a theoretical discussion about colloidal particles transporting to a meniscus deposition region for the vertical evaporation-driven colloidal deposition by the coffee-ring theory. The vertically immersed substrate is gradually exposed with a low speed, and colloidal particles are deposited on the substrate as suspension surface descends. Due to a singular evaporation rate at the contact line, to keep a constant contact angle, a solvent flow toward the meniscus region is formed to replenish lost liquid. This solvent flow results in a particle flow to form a film on the substrate. [Copyright &y& Elsevier]

Abstract: Classical molecular dynamics simulations are used to examine the growth of SrO and TiO2 thin films on SrTiO3 (STO). In particular, the simulations consider the deposition of SrO and TiO2 molecules at incident energies of 0.1, 0.5, and 1.0eV/atom onto the (001) surface of STO. The role of surface termination layer (SrO vs. TiO2) is analyzed. In the case of SrO deposition, smooth, ordered films are produced for all incident energies considered and for both surface terminations. By contrast, in the case of TiO2 deposition, three-dimensional islands are formed under all conditions. These predictions are in good agreement with experimental data. Importantly, the simulations explain why these differing morphologies are produced for SrO and TiO2 deposition. [Copyright &y& Elsevier]

Abstract: The effects of substrate rotation speed and rotation mode on the microstructure of large-sized metal sheet fabricated by electron beam physical vapor deposition technique were investigated. Helical and columnar microstructures were found in the deposited sheet. Both types of microstructures exhibit no preferential crystallographic orientation. The column inclination under asymmetric vapor incidence pattern was discussed. Integrated vapor incidence angle was found to be effective in evaluating the column inclination. [Copyright &y& Elsevier]

Abstract: Thin films containing both the azo-dye disperse red 1 (DR1) and the poly(methylmetacrylate) (PMMA) or the poly(phenylenevinylene) (PPV) are deposited by Langmuir–Blodgett and spin coating techniques on various substrates. The morphology, surface structure and growth pattern of the azo-dye-polymers were studied by atomic force microscopy. Nucleation and growth processes are responsible for the generation of different structures. The spin coated films were additionally oriented using the electric field poling method (corona poling). The film homogeneity is improved by this method in all cases. Due to the polar character of DR1 molecules, rod-like sub-structures are observed after the corona poling process in DR1–MMA films. The indium tin oxide surface enhances reorientation of the azo-dye-polymer molecules during corona poling and results in a significant reduction of the surface roughness. [Copyright &y& Elsevier]

Abstract: Ellipsometry is an optical analytical method based on measuring the change in polarization state of reflected or transmitted polarized light. A major challenge of the method has been the computation of reflecting surface physical parameters of interest from the raw measured data. These methods in common use are plagued by local minima and algorithm performance. The mathematics of the light reflection has long taken advantage of some aspects of Complex Analysis. The authors have used much more of Complex Analysis to treat growing films on homogeneous, isotropic substrates. The work presented here explores this advanced treatment for unknown homogeneous, isotropic substrates and for unknown layered substrates. The results lay the groundwork for a set of solution algorithms which are much more powerful and convenient than existing algorithms. Such algorithms eliminate the multiple solution problems inherent in least squares methods. [Copyright &y& Elsevier]

Abstract: The growth of aluminophosphate AlPO4-5 (AFI structure with one-dimensional parallel and straight channels of 7.3Å in cross section) and cobalt-substituted AlPO4-5 (CoAPO-5) films by hydrothermal treatment is investigated. In situ growth on bare (unmodified) silicon substrates using different growth temperatures, times, and precursor mixture compositions was carried out first and yielded films that exhibited either preferred orientation and poor coverage or good coverage but random orientation. Introducing seeded growth, which involved functionalization and seeding of the substrate with the amorphous fraction of an AlPO4-5-containing powder followed by hydrothermal seed growth, c-oriented, well-intergrown films were obtained with a variety of morphologies depending on the synthesis mixture composition and growth conditions. The effect of two different structure directing agents (SDAs), namely triethylamine and tripropylamine, was also examined. Controlled experiments by systematically varying secondary growth duration were performed in order to find the optimal growth time that yields complete coverage while minimizing the degree of misorientation. Seeded growth using dilute precursor mixtures favors c-out-of-plane growth yielding films with a thickness of several micrometers, while reducing the water/Al2O3 molar ratio and executing secondary growth under the appropriate hydrothermal conditions favored in-plane growth yielding well-intergrown films with sub-micron thickness. SEM, XRD, and UV–vis spectroscopy were used to characterize the synthesized AlPO4-5 and CoAPO-5 films. [Copyright &y& Elsevier]

Abstract: The deposition of ultra thin Ta(N) films by ALD is a possibility to achieve conformal film thickness and suitable step coverage for microelectronic applications. Due to the sorption of a precursor molecule to the substrate surface, the chemical interface conditions are important. In the present study selected substrate pretreatments were investigated by in situ XPS and spectroscopic ellipsometry in reference to the amount of carbon containing contamination and oxygen and in reference to the ALD growth rate of Ta(N) films. Furthermore, surface roughness was measured by AFM and will be discussed in dependence on the individual pretreatment and the ALD Ta(N) cycle number. [Copyright &y& Elsevier]

The effect of Ni2+ ion in a phosphating solution on the formation of phosphate compound on steel surface is studied. Experimental results indicate that Ni2+ promotes the nucleation of the formation of phosphate compound. The number of nucleation sites increases and the particle size decreases as the Ni2+ ion concentration in the phosphating solution increases. The presence of Ni2+ ions in the coating solution strongly influences the surface morphology and the distributions of Ni, Cr, Mo and V in the phosphate layer. The manganese phosphate coating is a two layered structure which consists of an iron rich inner layer and a Mn rich outer layer. The reduced Ni strips that are located near the centre of the phosphate compound mark the initial substrate surface before phosphating. [ABSTRACT FROM AUTHOR]

Abstract: We have grown silicon nitride (Si3N4) films on SiO2-glass and R-Al2O3 substrates by using reactive RF magnetron sputtering deposition methods with N2 pure gas and N2 +Ar mixture gas. The film composition, thickness and impurities have been examined by ion beam analysis. It is shown that the films have stoichiometric composition and are free from Ar contamination, when N2 gas was used for the film deposition. Effects of impurities on the film properties, e.g., optical properties will be discussed. [Copyright &y& Elsevier]

Strontium titanate films were grown by standard and interval pulsed laser interval deposition on (001) strontium titanate and magnesium oxide substrates. Reflection high-energy electron diffraction (RHEED) was used to monitor the growth mode of the films. The microstructures were investigated using transmission electron microscopy. The temporal evolution of the RHEED intensity confirmed a layer-by-layer growth mode in the homoepitaxial case. In heteroepitaxy, three dimensional growth occurred. Misfit dislocations and threading dislocations were the dominant defects. The film grown using the standard deposition was relaxed; the film grown using interval deposition was under in-plane tension and showed fewer threading dislocations. [ABSTRACT FROM AUTHOR]