378 results on '"Fafard S"'
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152. Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy
153. Quantum dot laser diodes
154. Asymmetric Stark shift inAlxIn1−xAs/AlyGa1−yAsself-assembled dots
155. Tunable intersublevel transitions in self-forming semiconductor quantum dots
156. Structural and radiative evolution in quantum dots near theInxGa1−xAs/GaAsStranski-Krastanow transformation
157. Room temperature operation of AlInAs/AlGaAs quantum dot lasers
158. Intermixing induced changes in the radiative emission from III–V quantum dots
159. Self-forming InAs/GaP quantum dots by direct island growth
160. Temperature effects in semiconductor quantum dot lasers
161. Anomalous magnetophotoluminescence as a result of level repulsion in arrays of quantum dots
162. State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots
163. Reduction of InGaAs/GaAs laser facet temperatures by band gap shifted extended cavities
164. Luminescence spectroscopy of InAs self-assembled quantum dots
165. Exciton droplets in zero dimensional systems in a magnetic field
166. Red-Emitting Semiconductor Quantum Dot Lasers
167. Temperature dependence of ultrasharp luminescence lines in AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots
168. State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots
169. Magneto-optical properties of InAs monolayers and InyAl1−yAs self-assembled quantum dots in Ga(Al)As matrices
170. Temperature effects on the radiative recombination in self-assembled quantum dots
171. Magnetoluminescence studies ofInyAl1−yAs self-assembled quantum dots inAlxGa1−xAs matrices
172. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
173. Photocarrier recombination inAlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots
174. Visible luminescence from semiconductor quantum dots in large ensembles
175. Soliton propagation of excitonic packets and superfluidity in Cu2O
176. Quantum-engineering of III–V semiconductor structures
177. Visible photoluminescence fromN-dot ensembles and the linewidth of ultrasmallAlyIn1−yAs/AlxGa1−xAs quantum dots
178. Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
179. Time‐resolved optical characterization of InGaAs/GaAs quantum dots
180. Resonant harmonic generation and dynamic screening in a double quantum well
181. Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
182. O-Dimensional-induced optical properties in self-assembled quantum dots
183. Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structures
184. Miniband formation in asymmetric double-quantum-well superlattice structures
185. Exciton transport inCu2O: Evidence for excitonic superfluidity?
186. Effects of an electric field on the continuum energy levels inInxGa1−xAs/GaAs quantum wells terminated with thin cap layers
187. Energy levels in quantum wells with capping barrier layer of finite size: Bound states and oscillatory behavior of the continuum states
188. Oscillatory behavior of the continuum states inInxGa1−xAs/GaAs quantum wells due to capping-barrier layers of finite size
189. High-efficiency commercial grade 1cm2 AlGaInP/GaAs/Ge solar cells with embedded InAs quantum dots for concentrator demonstration system.
190. Ion beam induced intermixing of quantum well heterostructures for optoelectronic applications.
191. Sequential optical study of the component layers of a semiconductor quantum-well system
192. Photoluminescence of MgIn2S4 and HgIn2S4
193. Electroluminescence in CdIn2S4 thin films
194. Exciton dephasing in quantum dot molecules.
195. Experimental indications for coherent coupling of two quantum dots.
196. Reduced 980 nm laser facet absorption by band gap shifted extended cavities.
197. Temperature independent lifetime in InAlAs quantum dots.
198. Structural and optical properties of self-assembled InGaAs quantum dots.
199. Quantum dot structures and devices with sharp adjustable electronic shells
200. External-cavity quantum-dot laser tunable through 1.55 μm.
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