151. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions.
- Author
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K Louarn, Y Claveau, L Marigo-Lombart, C Fontaine, A Arnoult, F Piquemal, A Bounouh, N Cavassilas, and G Almuneau
- Subjects
QUANTUM wells ,GALLIUM arsenide ,TUNNEL junctions (Materials science) - Abstract
In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm
−2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors. [ABSTRACT FROM AUTHOR]- Published
- 2018
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