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151. NovelIRF6Mutations Detected in Orofacial Cleft Patients by Targeted Massively Parallel Sequencing

153. Challenges and opportunities of vertical FET devices using 3D circuit design layouts

154. Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

155. Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells

156. Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

158. Mutations in a TGF-β Ligand, TGFB3, Cause Syndromic Aortic Aneurysms and Dissections

159. Baraitser-Winter cerebrofrontofacial syndrome: delineation of the spectrum in 42 cases

160. Mutations in a TGF-beta ligand, TGFB3, cause syndromic aortic aneurysms and dissections

162. Criteria for HNF1B analysis in patients with congenital abnormalities of kidney and urinary tract

163. Refinement of the critical 2p25.3 deletion region: the role of MYT1L in intellectual disability and obesity

164. Short Stature in KBG Syndrome: First Responses to Growth Hormone Treatment.

165. The Belgian MicroArray Prenatal (BEMAPRE) database [Online Abstract]

166. Short Stature in KBG Syndrome: First Responses to Growth Hormone Treatment.

167. A novel fragile X syndrome mutation reveals a conserved role for the carboxy-terminus in FMRP localization and function

168. Niet-chemische onkruidbestrijding op verhardingen

171. Exome sequencing identifies DYNC2H1 mutations as a common cause of asphyxiating thoracic dystrophy (Jeune syndrome) without major polydactyly, renal or retinal involvement

172. De novo INF2 mutations expand the genetic spectrum of hereditary neuropathy with glomerulopathy

174. Practical Guidelines for Managing Patients with 22q11.2 Deletion Syndrome

178. Pierpont syndrome: a collaborative study

179. Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

180. Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

181. RMG nMOS 1st process enabling 10x lower gate resistivity in N7 bulk FinFETs

183. Novel FRMD7 Mutations and Genomic Rearrangement Expand the Molecular Pathogenesis of X-Linked Idiopathic Infantile Nystagmus

184. X-exome sequencing of 405 unresolved families identifies seven novel intellectual disability genes

185. Short Stature in KBG Syndrome: First Responses to Growth Hormone Treatment

187. Switch in FGFR3 and -4 expression profile during human renal development may account for transient hypercalcemia in patients with Sotos syndrome due to 5q35 microdeletions

189. Refining the locus of branchio-otic syndrome 2 (BOS2) to a 5.25 Mb locus on chromosome 1q31.3q32.1

190. Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to lOnm and 30nm gate length

193. Posterior amorphous corneal dystrophy caused by a de novo deletion.

194. Deletion 2q37.3 and autism: molecular cytogenetic mapping of the candidate region for autistic disorder

195. Parenting, family contexts, and personality characteristics in youngsters with VCFS

197. Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond

198. Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si Fins

200. Partial monosomy 11q and trisomy 12q: variable expression in two siblings

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