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875 results on '"Denison, M"'

157. MALIBRAN.

Author

DENISON, M. A.

Published
1873

162. FIVE LETTERS.

Author

DENISON, M. A. and AUGUSTA

Published
1870

165. MY JOHN.

Author

DENISON, M. A.

Published
1866

176. JUNITA.

Author

DENISON, M. A.

Published
1872

183. COMBUSTION IN THE TURBULENT BOUNDARY LAYER OF CHEMICALLY ACTIVE SUBLIMATORS

Author

PHILCO NEWPORT BEACH CA AERONUTRONIC DIV, DENISON, M. R., PHILCO NEWPORT BEACH CA AERONUTRONIC DIV, and DENISON, M. R.

Abstract

An aerothermochemical analysis of chemically active surfaces immersed in a high speed stream of an oxidizing gas mixture is presented. The analysis applies to turbulent flow over blunt bodies whose surface material passes into the gaseous phase without going through the liquid state. The theory is developed in general for a whole class of sublimators and is applied to the particular case of graphite combustion about which a great deal of fundamental data is available.

Published
1958

184. Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor

Author

Poli, S., Reggiani, S., Baccarani, G., Gnani, E., ANTONIO GNUDI, Denison, M., Pendharkar, S., Wise, R., Seetharaman, S., S. Poli, S. Reggiani, M. Denison, G. Baccarani, E. Gnani, A. Gnudi, S. Pendharkar, R. Wise, and S. Seetharaman

Abstract

The rugged LDMOS transistors showing a current "enhancement" in their high current-voltage regime are investigated under electrical stress conditions. A new hot-carrier-injection (HCI) effect is observed for the n-channel devices, in that the temperature dependence of the device parameter drift changes with operating conditions: under high injection conditions, an increasing linear current drift DId,lin and a positive threshold voltage shift DVt are found under increasing temperature, whereas at low gate voltage DVt is temperature independent and DId,lin decreases with increasing temperature. A numerical investigation is carried out, revealing that traps at the gate oxide close to the source side of the channel are mainly responsible for the degradation under high injection, where the increase of the normal electric field is mainly driven by the local temperature. A temperature-dependent slope of the DVt curves is observed. Under low injection, the drift is dominated by traps located in the drain extension region at the corner of the STI

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