808 results on '"Daudin, B."'
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152. Effect of annealing on AlN/GaN quantum dot heterostructures: advanced ion beam characterization and X-ray study of low-dimensional structures
153. Reversed polarized emission in highly straineda-plane GaN/AlN multiple quantum wells
154. Optical spectroscopy of cubic GaN in nanowires
155. Identification of III–N nanowire growth kinetics via a marker technique
156. Growth mechanism of catalyst‐free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy
157. Visualization of Tm dopant atoms diffused out of GaN quantum dots
158. GaN‐based nanowires: From nanometric‐scale characterization to light emitting diodes
159. Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots
160. Elastic strain relaxation in GaN/AlN nanowire superlattice
161. Molecular beam epitaxy growth and optical properties of AlN nanowires
162. Structural properties of GaN nanowires and GaN/AlN insertions grown by molecular beam epitaxy
163. Structural properties of Ge/Si(001) nano-islands and AlGaN nanowires by Diffraction Anomalous Fine Structure and Multiwavelength Anomalous Diffraction
164. Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires
165. Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy
166. The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures
167. Depth profiling of optical and vibrational properties in GaN/AlN quantum dot superlattices
168. Anisotropic polarization of non-polar GaN quantum dot emission
169. Optically active centers in Eu implanted, Euin situdoped GaN, and Eu doped GaN quantum dots
170. Quantum dot to quantum wire transition ofm-plane GaN islands
171. Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
172. From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer
173. Raman scattering as a tool for the evaluation of strain inGaN∕AlNquantum dots: The effect of capping
174. Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization
175. Multiwavelength anomalous diffraction (MAD) and diffraction anomalous fine structure (DAFS) in the study of structural properties of nanostructures
176. GaN quantum dots grown on AlxGa1−xN layer by plasma-assisted molecular beam epitaxy
177. Grazing-incidence diffraction anomalous fine structure: Application to the structural investigation of group-III nitride quantum dots
178. Vibrational modes and strain in GaN/AlN quantum dot stacks: dependence on spacer thickness
179. Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping
180. Intentional and unintentional localization in InGaN
181. Probing exciton localization in nonpolarGaN∕AlNquantum dots by single-dot optical spectroscopy
182. The growth and rare-earth doping of GaN quantum dots on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy
183. GaN:Pr3+ nanostructures for red solid state light emission.
184. Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides
185. Growth of GaN quantum dots on nonpolarA -plane SiC by molecular-beam epitaxy
186. Erratum: “Strong electric field and nonuniformity effects in GaN∕AlN quantum dots revealed by high pressure studies” [Appl. Phys. Lett. 89, 051902 (2006)]
187. Mechanism ofGaNquantum dots capped withAlN: An AFM, electron microscopy, and x-ray anomalous diffraction study
188. Resonant Raman scattering in self-assembledGaN∕AlNquantum dots
189. AlN/GaN superlattices: strain relaxation
190. Optical properties of single non‐polar GaN quantum dots
191. Influence of stacking on optical characteristics of GaN/AlN self‐organized quantum dots
192. Quantitative strain analysis of GaN/AlN quantum dot multilayers
193. In situ andex situ grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dots
194. Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown on a‐plane 6H‐SiC
195. Polishing and characterization of thick AlN layers grown on SiC substrates by stress control hydride vapor phase epitaxy
196. Step-by-step capping and strain state ofGaN∕AlNquantum dots studied by grazing-incidence diffraction anomalous fine structure
197. In situ resonant x-ray study of vertical correlation and capping effects during GaN∕AlN quantum dot growth
198. Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures
199. Raman study and theoretical calculations of strain in GaN quantum dot multilayers
200. GaN quantum dots doped with Tb
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