451 results on '"Bellotti, Enrico"'
Search Results
152. Direct and phonon-assisted indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs computed using Green's function formalism
153. Temperature characteristics of hot electron electroluminescence in silicon
154. Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays
155. Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective
156. Rigorous theory of the radiative and gain characteristics of silicon and germanium lasing media
157. Intersubband Absorption in AlGaN/GaN Quantum Wells
158. Transport Parameters for Electrons and Holes
159. Analysis of InAsSb nBn spectrally filtering photon-trapping structures
160. Deriving k·p parameters from full-Brillouin-zone descriptions: A finite-element envelope function model for quantum-confined wurtzite nanostructures
161. Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part I: dark current dependence on device geometry
162. Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part II: modulation transfer function modeling
163. New model for the ideal nBn infrared detector
164. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
165. Numerical simulation of deep-UV avalanche photodetectors
166. Numerical simulation of III-nitride lattice-matched structures for quantum cascade lasers
167. Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments
168. Threading screw dislocations in GaN by the Heyd-Scuseria-Ernzerhof hybrid functional
169. Experimental and theoretical study of dephasing processes in the kinetics of photoexcited carriers in GaN
170. Saga of efficiency degradation at high injection in InGaN light emitting diodes
171. Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance
172. Studies of spatial uniformity and jitter in SiC UV SPADs
173. Dynamics of Photo-Excited Carriers and Coherent Effects in GaN Under Subpicosecond Laser Pulse Excitation
174. Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook
175. Multiscale modeling of photon detectors from the infrared to the ultraviolet
176. Introduction to the Issue on Numerical Simulation of Optoelectronic Devices
177. Numerical Simulation of Third-Generation HgCdTe Detector Pixel Arrays
178. Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study
179. Physics-based simulation of the modulation transfer function in HgCdTe infrared detector arrays
180. Numerical simulation of InAs nBn infrared detectors with n-type barrier layers
181. Large-scale numerical simulation of reduced-pitch HgCdTe infrared detector arrays
182. Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures
183. Numerical simulation of crosstalk in reduced pitch HgCdTe photon-trapping structure pixel arrays
184. Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
185. A full band Monte-Carlo study of carrier transport properties of InAlN lattice matched to GaN
186. Auger recombination in bulk InGaN and quantum wells: a numerical simulation study
187. Tunable chirality and circular dichroism of a topological insulator with C2υ symmetry as a function of Rashba and Dresselhaus parameters.
188. Numerical analysis of indirect Auger transitions in InGaN
189. Numerical simulation of InAs/AlAsSb nBn detector arrays
190. Towards noise-aware surrogate models of carrier population dynamics in optically excited GaN
191. A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)
192. Numerical modeling of a dark current suppression mechanism in IR detector arrays
193. 3D electromagnetic and electrical simulation of HgCdTe pixel arrays
194. GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth
195. A numerical study of Auger recombination in bulk InGaN
196. Auger lifetime in narrow gap semiconductors
197. A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes
198. 3D numerical analysis of As-diffused HgCdTe planar pixel arrays
199. Electronic and Optical Properties of Mg x Zn1−x O and Be x Zn1−x O Quantum Wells
200. First-principles simulation of GaN material and devices: an application to GaN APDs
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