151. Enhancement of the power efficiency for p-i-n OLEDs containing organic p-type HAT-CN and n-type LCV materials
- Author
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Tae Whan Kim, Kwang Seop Lee, Iseul Lim, and Sung-Hwan Han
- Subjects
Materials science ,business.industry ,General Chemistry ,Electron ,Condensed Matter Physics ,Luminance ,Electronic, Optical and Magnetic Materials ,Biomaterials ,Materials Chemistry ,OLED ,Optoelectronics ,Electrical and Electronic Engineering ,Operating voltage ,business ,Current density ,Layer (electronics) ,Electrical efficiency ,Voltage - Abstract
The p-i-n organic light-emitting devices (OLEDs) with a low turn-on voltage and a high power efficiency were fabricated by organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) layer and organic n-type 4,4′, 4 ″ -methylidynetris (N,N-dimethylaniline) (LCV) materials. The lowest operating voltage of the electron-only devices with a 2.5-wt.% LCV-doped BPhen layer was 4.02 V. The highest values of the current density and the luminance of the p-i-n OLEDs were 429.8 mA/cm2 at 7.0 V and 10,950 cd/m2 at 6.8 V, respectively. The turn-on voltage and the power efficiency of the p-i-n OLEDs with a HAT-CN layer and a LCV-doped BPhen ETL were 2.46 V and 2.76 lm/W, respectively. The enhancement of the power efficiency and the decrease in the turn-on voltage of the p-i-n OLEDs were attributed to the improvement of the hole and electron injections due to the utilization of the p-type HAT-CN and the n-type LCV-doped BPhen layers.
- Published
- 2014