2,125 results on '"Amano, Hiroshi"'
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152. Visualization of depletion layer in AlGaN homojunction p–n junction
153. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
154. Perspective on thermal conductance across heterogeneously integrated interfaces for wide and ultrawide bandgap electronics
155. Surface Kinetics in Halide Vapor Phase Epitaxial Growth of Gan Layers on Gan (0001) Freestanding Substrates
156. An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources
157. 卓上型エアカーテン装置によるエアロゾル粒子の遮断および捕集性能
158. GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications
159. Patellofemoral chondral status after medial patellofemoral ligament reconstruction using second-look arthroscopy in patients with recurrent patellar dislocation
160. Optical properties of neodymium ions in nanoscale regions of gallium nitride
161. MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (1 1 1)Si substrates
162. Gasification of woody biomass char with CO 2: The catalytic effects of K and Ca species on char gasification reactivity
163. Dual tunnel medial patellofemoral ligament reconstruction for patients with patellar dislocation using a semitendinosus tendon autograft
164. Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate
165. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg
166. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions
167. Multiple electron beam generation from InGaN photocathode
168. Erratum: “Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy” [Appl. Phys. Lett. 119, 152102 (2021)]
169. Isamu Akasaki
170. (Invited) Realization of Stable Electrical Performance of Algainp-Based Red Micro-Light-Emitting Diode By Controlling Interfacial Morphologies of Metal Contacts
171. Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy
172. Rapid cold hardening response in the predatory mite Neoseiulus californicus
173. MRI analysis of single-, double-, and triple-bundle anterior cruciate ligament grafts
174. Chemical investigation of aggregation behaviour in the two-spotted spider mite Tetranychus urticae
175. Cold storage of the predatory mite Neoseiulus californicus is improved by pre-storage feeding on the diapausing spider mite Tetranychus urticae
176. List of Contributors
177. MOCVD of Nitrides
178. Factors Affecting the Outcomes of Double-Bundle Medial Patellofemoral Ligament Reconstruction for Recurrent Patellar Dislocations Evaluated by Multivariate Analysis
179. Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy
180. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
181. Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
182. Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
183. Smart-cut-like laser slicing of GaN substrate using its own nitrogen
184. “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration
185. Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes
186. Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells
187. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers
188. Uniting a III‐Nitride Transmitter, Waveguide, Modulator, and Receiver on a Single Chip
189. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
190. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations
191. Isamu Akasaki: The Pioneer of Blue LEDs and his Collaboration with pss
192. Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE
193. InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy
194. Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC
195. One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy
196. Novel UV devices on high-quality AlGaN using grooved underlying layer
197. Relaxation and recovery processes of Al xGa 1−xN grown on AlN underlying layer
198. Weak metastability of Al x Ga1â' x N (x = 13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps.
199. Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
200. Thermoelectric Power Measurement of Catalyst-free Si-doped GaAs Nanowires
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