616 results on '"Zhang, Shengbai"'
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102. Beyond the Anderson rule: importance of interfacial dipole and hybridization in van der Waals heterostructures
103. Electrical properties and structural transition of Ge2Sb2Te5 adjusted by rare-earth element Gd for nonvolatile phase-change memory.
104. Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage.
105. Orientation-Controlled Large-Area Epitaxial PbI2 Thin Films with Tunable Optical Properties
106. Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing
107. Revealing the vacuum level in an infinite solid by real-space potential unfolding
108. Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling
109. Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3
110. Interactions between Al12X (X = Al, C, N and P) nanoparticles and DNA nucleobases/base pairs: implications for nanotoxicity
111. Prediction of Effective Photoelectron and Hole Separation in Type‑I MoS2/PtSe2 van der Waals Junction.
112. Mixed Chalcogenide‐Halides for Stable, Lead‐Free and Defect‐Tolerant Photovoltaics: Computational Screening and Experimental Validation of CuBiSCl2 with Ideal Band Gap.
113. High‐Throughput Screening for Phase‐Change Memory Materials
114. Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material
115. Co and Pt Dual‐Single‐Atoms with Oxygen‐Coordinated Co–O–Pt Dimer Sites for Ultrahigh Photocatalytic Hydrogen Evolution Efficiency
116. Epitaxial Growth of Two-Dimensional Insulator Monolayer Honeycomb BeO
117. Switchable electronic and enhanced magnetic properties of CrI3 edges
118. Optical subpicosecond nonvolatile switching and electron-phonon coupling in ferroelectric materials
119. Vector potential and surface magnetic field in magnetoelectric antiferromagnetic materials
120. Polarity- and Pressure-Dependent Hydrogen Dynamics on ZnO Polar Surfaces Revealed by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy
121. Quadruple-period ordering in MBE GaAsSb alloys
122. Ultrahigh Photocatalytic CO2 Reduction Efficiency and Selectivity Manipulation by Single‐Tungsten‐Atom Oxide at the Atomic Step of TiO2.
123. Defects in Statically Unstable Solids: The Case for Cubic Perovskite α -CsPbI3.
124. Enhanced valley splitting of WSe2 in twisted van der Waals WSe2/CrI3 heterostructures.
125. Defect tolerance in CsPbI3: reconstruction of the potential energy landscape and band degeneracy in spin–orbit coupling.
126. Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics
127. Chalcogenide Perovskite YScS3 as a Potential p-Type Transparent Conducting Material
128. Anisotropic band structure of TiS3 nanoribbon revealed by polarized photocurrent spectroscopy
129. Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics
130. Carrier Dynamics and Transfer across the CdS/MoS2 Interface upon Optical Excitation
131. Analysis of an Ultra-Short True Time Delay Line Optical Reservoir Computer
132. Topological carbon materials: A new perspective
133. An Environmentally Stable and Lead‐Free Chalcogenide Perovskite
134. Spin-Triplet Excitonic Insulator: The Case of Semihydrogenated Graphene
135. Emergence of Nontrivial Low‐Energy Dirac Fermions in Antiferromagnetic EuCd 2 As 2
136. Bipolar Doping by Intrinsic Defects and Magnetic Phase Instability in Monolayer CrI3
137. Machine Learning Augmented Discovery of Chalcogenide Double Perovskites for Photovoltaics
138. Critical topological nodal points and nodal lines/rings in Kagome graphene
139. Benchmarking PBE+D3 and SCAN+rVV10 methods using potential energy surfaces generated with MP2+ΔCCSD(T) calculation
140. Octahedron rotation evolution in 2D perovskites and its impact on optoelectronic properties: the case of Ba–Zr–S chalcogenides
141. Correction to “Semimetal or Semiconductor: The Nature of High Intrinsic Electrical Conductivity in TiS2”
142. Ultrahigh Photocatalytic Rate at a Single‐Metal‐Atom‐Oxide
143. Ligand-Assisted Charge-Transfer Mechanism: The Case of CdSe/Cysteine/MoS2 Heterostructures.
144. Defect tolerance in chalcogenide perovskite photovoltaic material BaZrS3.
145. Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change.
146. Orientation-Controlled Large-Area Epitaxial PbI2 Thin Films with Tunable Optical Properties.
147. Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3.
148. Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3.
149. Switchable electronic and enhanced magnetic properties of CrI3 edges.
150. Novel Organometallic Fullerene Complexes for Vehicular Hydrogen Storage
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