436 results on '"Yonenaga, I."'
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102. Transition Dynamics for Mu Acceptor States in Si1-xGex Alloys.
103. Muonium transitions in Ge-rich SiGe alloys
104. 2 MeV e‐irradiation UHVEM study on the impact of O and Ge doping on {113}‐defect formation in Si
105. Optical properties of edge dislocations on (11¯00) prismatic planes in wurtzite ZnO introduced at elevated temperatures
106. Muonium defect levels in Czochralski-grown silicon-germanium alloys
107. Evidence for a shallow muonium acceptor state in Ge-rich Cz-Si1-xGex
108. Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy
109. Interaction of phosphorus with dislocations in heavily phosphorus doped silicon
110. Electrical conduction along dislocations in plastically deformed GaN
111. Muonium acceptor states in high Ge alloys
112. Vacancy formation during oxidation of silicon crystal surface
113. Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si
114. Light emission due to dislocations in wurtzite ZnO bulk single crystals freshly introduced by plastic deformation
115. Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method
116. Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence
117. Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals
118. Imaging by X-ray Fluorescence Holography
119. Segregation coefficients of various dopants in SixGe1−x (0.93<0.96) single crystals
120. Effect of high-magnetic-field on dislocation-oxygen impurity interaction in Si
121. Characterization of hydrogen-like states in bulk Si1−xGexalloys through muonium observations
122. Photoluminescence study of GaN with dislocations introduced by plastic deformation
123. Dislocation–impurity interaction in Czochralski-grown Si heavily doped with B and Ge
124. Growth and fundamental properties of SiGe bulk crystals
125. Disorder-induced broadening of transverse acoustic phonons in SixGe1−x mixed crystals
126. Local atomic structure in Czochralski-grown Ge1−xSix bulk alloys
127. Dislocation mobility and photoluminescence of plastically deformed GaN
128. C03 Observation of Atomic Arrangements in Si1-xGex Crystals by X-ray Fluorescence Holography
129. High-temperature strength of III V nitride crystals
130. Impurity effects on dislocation activities in Si
131. Indentation hardnesses of semiconductors and a scaling rule
132. Magnetic field effect for improvement of thermoelectric conversion: A proposal for Nernst-Seebeck element.
133. Bond lengths inGe1−xSixcrystalline alloys grown by the Czochralski method
134. Growth and fundamental properties of GeSi bulk crystals.
135. High-temperature hardness of bulk single-crystal gallium nitride - in comparison with other wide-gap materials
136. Activities of dislocations in heavily impurity-doped Si
137. Inverse brittle-to-ductile transition in gallium-arsenide under hydrostatic pressure
138. Cross-slip in GaAs and InP at elevated temperatures
139. Dislocation dissociation and stacking-fault energies in Ge1-xSixalloys
140. Disorder broadening of the acoustic branches in SixGe1−x mixed crystals
141. High Temperature Hardness of Bulk Single Crystal GaN
142. Spectroscopic identification of shallow muonium acceptors in Si0.06Ge0.94.
143. How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy.
144. Plastic deformation of GaAs at low temperatures
145. Recombination-Enhanced Dislocation Motion in SiGe and Ge
146. Structure and Climb of Faulted Dipoles in GaAs
147. Plasticity of III—V Compounds at Low Temperatures
148. Dislocation Velocities and Mechanical Strength of Bulk GeSi Crystals
149. Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs
150. Bond Lengths in Ge1-xSix Crystalline Alloys Grown by the Czochralski Method
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