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Abstract Background To compare the safety and efficacy of pipeline embolization device (PED) and Tubridge flow diverter (TFD) for unruptured posterior circulation aneurysms. Methods Posterior aneurysm patients treated with PED or TFD between January, 2019, and December, 2021, were retrospectively reviewed. Patients’ demographics, aneurysm characteristics, treatment details, complications, and follow-up information were collected. The procedural-related complications and angiographic and clinical outcome were compared. Results A total of 107 patients were involved; PED was applied for 55 patients and TFD for 52 patients. A total of 9 (8.4%) procedural-related complications occurred, including 4 (7.3%) in PED group and 5 (9.6%) in TFD group. During a mean of 10.3-month angiographic follow-up for 81 patients, complete occlusion was achieved in 35 (85.4%) patients in PED group and 30 (75.0%) in TFD group. The occlusion rate of PED group is slightly higher than that of TFD group. A mean of 25.0-month clinical follow-up for 107 patients showed that favorable clinical outcome was achieved in 53 (96.4%) patients in PED group and 50 (96.2%) patients in TFD group, respectively. No statistical difference was found in terms of procedural-related complications (p = 0.737), occlusion rate (p = 0.241), and favorable clinical outcome (0.954) between groups. Conclusions The current study found no difference in complication, occlusion, and clinical outcome between PED and TFD for unruptured PCAs.

Abstract In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2. High-quality and stable MOS interface is obtained through two-step process, including simple acid cleaning and a following (NH4)2S passivation. Based on the calibration with experiment, the simulation results of physical model are consistent well with the experiment data in transfer, output, and breakdown characteristic curves, which demonstrate the validity of the simulation data obtained by Silvaco technology computer aided design (Silvaco TCAD). The mechanisms of on-state and breakdown are thoroughly studied using Silvaco TCAD physical model. The device parameters, including n−-GaN drift layer, p-GaN channel layer and gate dielectric layer, are systematically designed for optimization. This comprehensive analysis and optimization on the vertical GaN-based trench MOSFETs provide significant guide for vertical GaN-based high power applications.

In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal–oxide–semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the simulated physical models and associated model parameters have been well calibrated with the reported experimental results of GaN n-channel NWFET and the simulated typical electrical parameters match the measured data. According to the simulation results, the GaN GAA vertical nanowire CMOS inverter exhibits rail-to-rail operation, low static power dissipation, large noise margins, high thermal stability and good scalability.

This paper presented a AlGaN/GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates with a Si doped barrier layer were fabricated for high power application. Compared with the conventional SBDs, the SBDs with doped barrier layer have the lower turn-on voltage ( $V_{ON}$ ) and specific on resistance (RON_SP) because more free carriers are induced in two-dimensional electron gas (2DEG) channel. With Si doping concentration of $1 \times 10^{20}$ cm−3 for AlGaN barrier layer, the SBDs demonstrate RON_SP of 0.12 m $\Omega \cdot \mathrm{cm^{2}}$ , $V_{ON}$ of 0.41 V, breakdown voltage of 339 V, and power figure-of-merit (PFOM) of 957.6 MV/cm2, which have a great potential for high-speed power device applications. Meanwhile, the SBDs with doped barrier have a faster reverse recovery time, and a better low-frequency noise (LFN) characteristics at low current density due to high carrier mobility and less generation-recombination (G-R) noise.

Novel food-grade bigels were fabricated using zein nanoparticles for interfacial stabilization and non-surfactant gelators (beeswax and tapioca) for bulk stabilization. The present study demonstrated the importance of interfacial stability for biphasic gels and sheds light on the roles of the gelation mechanism and the oil/water ratio of a bigel on its microstructure, physical properties, and digestion behaviors. The results indicated that it is not an easy task to realize homogenization and subsequent gelation in beeswax–tapioca biphasic systems, as no amphiphilic components existed. However, applying the binding of zein nanoparticles at the oil–water interface allowed us to produce a homogeneous and stable bigel (oil fraction reach 40%), which exhibited enhanced structural and functional properties. Oleogel structures play a crucial role in determining the deformation response of bigel systems. As the oil content increased, the mechanical strength and elastic properties of bigels were enhanced. In the meantime, clear bigel-type transitions were observed. In addition, the fabricated bigels were shown to be beneficial for delayed digestion, and the lowest degree of lipolysis could be found in bigel with 50% oleogel.

Abstract As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

Background and PurposeUnruptured intracranial aneurysms (UIAs) are increasingly being detected in clinical practice. Artificial intelligence (AI) has been increasingly used to assist diagnostic techniques and shows encouraging prospects. In this study, we reported the protocol and preliminary results of the establishment of an intracranial aneurysm database for AI application based on computed tomography angiography (CTA) images.MethodsThrough a review of picture archiving and communication systems, we collected CTA images of patients with aneurysms between January 2010 and March 2021. The radiologists performed manual segmentation of all diagnosed aneurysms on subtraction CTA as the basis for automatic aneurysm segmentation. Then, AI will be applied to two stages of aneurysm treatment, namely, automatic aneurysm detection and segmentation model based on the CTA image and the aneurysm risk prediction model.ResultsThree medical centers have been included in this study so far. A total of 3,190 cases of CTA examinations with 4,124 aneurysms were included in the database. All identified aneurysms from CTA images that enrolled in this study were manually segmented on subtraction CTA by six readers. We developed a structure of 3D-Unet for aneurysm detection and segmentation in CTA images. The algorithm was developed and tested using a total of 2,272 head CTAs with 2,938 intracranial aneurysms. The recall and false positives per case (FP/case) of this model for detecting aneurysms were 0.964 and 2.01, and the Dice values for aneurysm segmentation were 0.783.ConclusionThis study introduces the protocol and preliminary results of the establishment of the intracranial aneurysm database for AI applications based on CTA images. The establishment of a multicenter database based on CTA images of intracranial aneurysms is the basis for the application of AI in the diagnosis and treatment of aneurysms. In addition to segmentation, AI should have great potential for aneurysm treatment and management in the future.

H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H (4 nm)/ZnO (20 nm) double active layers by magnetron sputtering at room temperature, and studied the effect of the hydrogen flow ratio on the devices’ performance. ZnO:H/ZnO-TFT has the best overall performance when H2/(Ar + H2) = 0.13% with a mobility of 12.10 cm2/Vs, an on/off current ratio of 2.32 × 107, a subthreshold swing of 0.67 V/Dec, and a threshold voltage of 1.68 V, which is significantly better than the performance of single active layer ZnO:H-TFTs. This exhibits that the transport mechanism of carriers in double active layer devices is more complicated. On one hand, increasing the hydrogen flow ratio can more effectively suppress the oxygen-related defect states, thus reducing the carrier scattering and increasing the carrier concentration. On the other hand, the energy band analysis shows that electrons accumulate at the interface of the ZnO layer close to the ZnO:H layer, providing an additional path for carrier transport. Our research exhibits that the combination of a simple hydrogen doping process and double active layer construction can achieve the fabrication of high-performance ZnO-based TFTs, and that the whole room temperature process also provides important reference value for the subsequent development of flexible devices.

Background and PurposeThe Neuroform EZ stent system (Boston Scientific Corporation, Fremont, CA, United States) is a fourth-generation intracranial aneurysm stent designed specifically for the cerebrovasculature to support aneurysm treatment. In this study, we analyzed our consecutive series of patients with aneurysm treated with the Neuroform EZ stent, with special attention to the occurrence of in-stent stenosis (ISS).MethodsA retrospective review of our center's electronic database was conducted to identify all patients with intracranial aneurysms who underwent aneurysm treatment with the Neuroform EZ stent between January 2016 and October 2018. Patients with at least one digital subtraction angiography (DSA) follow-up in our hospital were enrolled in this study. In-stent stenosis (ISS) was graded as mild (50%).ResultsThe study included 114 patients (78 women, 68.4%; median age 57.2 ± 9 years) with a total of 116 aneurysms. Of the 116 lesions, 20 were identified with ISS (17.2%) at a mean follow-up of 6.9 ± 1.7 months, and ISS was mild in 30% (6/20), moderate in 50% (10/20), and severe in 20% (4/20). No patients were symptomatic or required further intervention. Patients who developed ISS were younger than those without ISS (52.6 ± 7.8 vs. 57.9 ± 9; p = 0.016). The proportion of aneurysms located at the artery bifurcation was significantly higher in patients with stenosis than located at the sidewall artery (37.9 vs. 10.3%; p = 0.002). In the multivariable analysis, the patients' age (OR = 0.94; 95% CI 0.88–0.998; p = 0.02) and bifurcated aneurysm location (OR = 4.59; 95% CI 1.54–13.67; p = 0.006) were independent predictors of ISS.ConclusionsIn this retrospective study, the incidence of ISS after Neuroform EZ stent placement was 17.2%, and all the ISS cases were asymptomatic. Patients with younger age and bifurcated aneurysm location are more likely to develop ISS. Although Neuroform EZ stent is particularly suitable for bifurcated aneurysms, the ISS for this location should be focused upon.

Abstract To further improve the performance of all-inkjet-printing ZnO UV photodetector and maintain the advantages of inkjet printing technology, the inkjet printing Ag nanoparticles (NPs) were deposited on the inkjet printing ZnO UV photodetector for the first time. The inkjet printing Ag NPs can passivate the surface defects of ZnO and work as surface plasmons from the characterization of photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and finite difference time domain method (FDTD) simulation. The normalized detectivity (D *) of the Ag NP-modified detector reaches to 1.45 × 1010 Jones at 0.715 mW incident light power, which is higher than that of 5.72 × 109 Jones of the bare ZnO photodetector. The power-law relationship between the photocurrent and the incident light power of the Ag NP-modified ZnO detector is I pc ∝ P 2.34, which means the photocurrent is highly sensitive to the change of incident light power.

Abstract The flexible and rechargeable energy storage device with excellent performance is highly desired due to the demands of portable and wearable devices. Herein, by integrating the bendability and stretchability of Polyvinyl alcohol (PVA), pseudocapacitance of Polyaniline (PANI), and the charge transport ability of carbon nanotubes (CNTs), PVA/CNT/PANI flexible film was fabricated as supercapacitor electrodes with excellent electrochemical performance and flexibility. Full-solid supercapacitor is prepared based on PVA/H2SO4 gel electrolyte and as-prepared film electrodes. The device achieves an areal capacitance of 196.5 mF cm-2 with high cycling stability. The flexible properties of PVA, the conductivity of CNT, and the pseudo-capacitance of PANI contribute to the superior performance. Present work develops a facile and effective way for preparing flexible electrode materials. Graphical Abstract In present work, we fabricated PVA/CNT/PANI flexible film as supercapacitor electrodes with excellent electrochemical performance and flexibility.

Abstract Background Deregulation of miRNA-21 expression has been reported to be associated with vascular smooth muscle behavior and cytoskeletal stability. This study is aimed to investigate the density of serum miRNA-21 in patients with different phases of intracranial aneurysms (IAs) and explore its warning function for IA rupture. Methods A total of 16 in 200 IA patients were selected and categorized into 4 groups based on the phase of IA. Microarray study was carried out using serum miRNA and differentially expressed miRNAs were identified. Another 24 samples from a cohort of 360 patients were added and real-time polymerase chain reaction (RT-PCR) was performed on expanded sample size (n = 40) for miRNA-21 validation. Potential gene targets of miRNA-21 were screened out from Gene Ontology (GO) database and literatures. Results Microarray study identified 77 miRNAs with significantly different expression levels between experimental groups and the control group. RT-PCR assays validated significant downregulation of miRNA-21 in experimental groups, among which miRNA-21 expression level of daughter aneurysm group decreased the most. Bioinformatic analyses revealed that several target genes related with miRNA-21 may be involved in IA formation and rupture. Conclusions This study suggested that miRNA-21 had a protective effect for intracranial vascular wall against remodeling and warning function for intracranial aneurysm rupture. Significant suppression of serum miRNA-21 in IA patients may provide diagnostic clues for aneurysm rupture and guide clinical intervention.

Abstract Polychlorinated biphenyls (PCBs) are persistent organic pollutants that are widely distributed in the environment. It is noteworthy that the PCBs are endocrine-disrupting substances, and their toxicity induces cancer and damage to the mammalian reproductive system, immune system, stomach, skin, liver, etc. This work aimed to synthesize 3A-amino-3A-deoxy-(2AS, 3AS)-β-cyclodextrin hydrate/tin disulfide composite material and to study its material properties, electrochemical properties, and application to PCB detection. The nanostructured tin disulfide (SnS2) synthesized by hydrothermal technique and 3A-amino-3A-deoxy-(2AS, 3AS)-β-cyclodextrin hydrate were sequentially modified onto the disposable screen-printed carbon electrode (SPCE) via titration using a micropipette. The 3A-amino-3A-deoxy-(2AS, 3AS)-β-cyclodextrin hydrate (β-CD) improved the selectivity of the modified electrode. The fabricated β-CD/SnS2/SPCE was employed to determine the presence of PCBs by cyclic voltammetry (CV) and differential pulse voltammetry (DPV). The detection range was 0.625–80 μM, with a limit detection of approximately 5 μM. The electrodes were as stable as 88% after 7 days’ storage. The results showed that the β-CD successfully encapsulated PCBs to achieve an electrochemical sensor that reduced the time and increased the convenience of PCBs detection.

Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN layer as an oxygen diffusion barrier layer to prevent further oxidizing of the underlying AlGaN barrier layer, and to ensure that the low-resistive p-GaN layer in the access region was fully oxidized. Relative to conventional p-GaN gated AlGaN/GaN HEMTs, these AlGaN/GaN HEMTs with HR-GaN layers achieved a lower drain leakage current of 4.4 $\times 10^{-7}$ mA/mm, a higher drain current on/off ratio of 3.9 $\times 10^{9}$ , a lower on-state resistance of 17.1 ${\Omega }\cdot $ mm, and less current collapse.

Owing to the development of modern display technology, micro- and mini-light-emitting diodes (LEDs) have affected technological advancements in the display industry. The structure of mini-LEDs is completely different than that of traditional LED backlights because the former employs a display technology with an LED array structure, optical resonant cavity, and color conversion layer. Display backlight technology encounters difficulty in achieving a truly effective energy-loss mechanism when designing or measuring mini-LED performance. The present study proposes three major mini-LED energy loss mechanisms: cross-talk, resonant, and quantum conversion losses. Herein, the spectrum was obtained through the integrating sphere system, and the calculation mechanism was formed by the down-conversion theorem as the decoupling principle, which successfully calculated the independent energy-loss efficiency of each mechanism and effectively deduced the brightness and color saturation performance of this design combination.

Abstract Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved. This paper proposes a novel hybrid termination structure for vertical gallium nitride Schottky diodes to improve breakdown voltage. This work is carried out to simulate the breakdown voltage and reverse characteristics of the vertical gallium nitride Schottky diode by using technology computer aided design (TCAD) simulation. Under the same testing conditions, we demonstrate that compared with the control vertical Schottky diode, the breakdown voltage of the proposed Schottky diode can be significantly advanced, which has increased by 350 V and reached 850 V.

Abstract Cortisol, a steroid hormone, is secreted by the hypothalamic-pituitary-adrenal system. It is a well-known biomarker of psychological stress and is hence known as the “stress hormone.” If cortisol overexpression is prolonged and repeated, dysfunction in the regulation of cortisol eventually occurs. Therefore, a rapid point-of-care assay to detect cortisol is needed. Salivary cortisol electrochemical analysis is a non-invasive method that is potentially useful in enabling rapid measurement of cortisol levels. In this study, multilayer films containing two-dimensional tin disulfide nanoflakes, cortisol antibody (C-Mab), and bovine serum albumin (BSA) were prepared on glassy carbon electrodes (GCE) as BSA/C-Mab/SnS2/GCE, and characterized using electrochemical impedance spectroscopy and cyclic voltammetry. Electrochemical responses of the biosensor as a function of cortisol concentrations were determined using cyclic voltammetry and differential pulse voltammetry. This cortisol biosensor exhibited a detection range from 100 pM to 100 μM, a detection limit of 100 pM, and a sensitivity of 0.0103 mA/Mcm2 (R 2 = 0.9979). Finally, cortisol concentrations in authentic saliva samples obtained using the developed electrochemical system correlated well with results obtained using enzyme-linked immunosorbent assays. This biosensor was successfully prepared and used for the electrochemical detection of salivary cortisol over physiological ranges, based on the specificity of antibody-antigen interactions.

We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current ( $\text{I}_{\mathrm{ on}}$ )/off-current ( $\text{I}_{\mathrm{ off}}$ ) ratio reaches very high value of $\sim 10^{8}$ at $\text{V}_{\mathrm{ ds}}= - 0.5$ V with a smaller tunneling junction width at the drain. The innovative T-shape design allows integration of both TFET and metal-oxide semiconductor field-effect transistors (MOSFET) operation modes in one structure. Both TFET and MOSFET operation modes are experimentally demonstrated in this device structure, which provide the implementation of the selector function with the single device.

Abstract Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 106 cm− 2. With the electrical performance measurements conducted, the SBDs show a low turn-on voltage V on (0.70~0.78 V) and high current I on/I off ratio (9.9 × 107~1.3 × 1010). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5 ns for the 100-, 200-, 300-, 400-, and 500-μm-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area.

We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm2/Vs and on/off current ratio of ~106 based on Si/SiO2 substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr2O3 and In2O3, and In-Pr-O channel’s nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.

Abstract The energy band alignment at the multilayer-MoS2/ZrO2 interface and the effects of CHF3 plasma treatment on the band offset were explored using x-ray photoelectron spectroscopy. The valence band offset (VBO) and conduction band offset (CBO) for the MoS2 /ZrO2 sample is about 1.87 eV and 2.49 eV, respectively. While the VBO was enlarged by about 0.75 eV for the sample with CHF3 plasma treatment, which is attributed to the up-shift of Zr 3d core level. The calculation results demonstrated that F atoms have strong interactions with Zr atoms, and the valence band energy shift for the d-orbital of Zr atoms is about 0.76 eV, in consistent with the experimental result. This interesting finding encourages the application of ZrO2 as gate materials in MoS2-based electronic devices and provides a promising way to adjust the band alignment.

Spontaneous vertebral artery dissecting aneurysm has been increasingly attributed as a major cause of focal neurological deficits due to vertebrobasilar artery ischemia or subarachnoid hemorrhage (SAH). Although the development of spontaneous vertebral artery dissecting aneurysm (VADA) is rare, de novo VADA after treatment of contralateral vertebral artery (VA) is more less frequently observed. There are only a few reports related to de novo VADA after treatment of the contralateral VA in the medical literature. The mechanisms responsible for de novo dissection after treatment of unilateral VADA are still not clearly understood. In this manuscript, we report an unusual case of a patient with a de novo VADA after placement of a pipeline embolization device (PED) stent on the contralateral VA along with a thorough review of the literature. A 42-years old male patient was referred to the hospital with sudden onset of dizziness, nausea, and vomiting. Initial digital subtraction angiography (DSA) images demonstrated a VADA in the fourth segment of the left VA without the involvement of the posterior inferior cerebellar artery (PICA). There were no significant abnormalities found in the right vertebral artery. He underwent an endovascular pipeline embolization to treat the dissecting aneurysm (DA). Surprisingly, follow-up DSA imaging 14 months after the initial treatment showed a segmental dilatation and narrowing of the right VA, which suggested a de novo VADA on the right side that had occurred postoperatively. This was followed by a tent-assisted coil embolization therapy for occluding this de novo VADA. This patient showed an uneventful postoperative course with no neurological abnormalities. In addition to hemodynamic stress changes, the unique clinicopathological features of dissecting aneurysms may contribute significantly to the pathogenesis of de novo VA dissection. Given that VA in VADA patients may be vulnerable on both sides, it is important to consider the risk of de novo dissection after initial aneurysm treatment. The bilateral vertebral artery has to be carefully observed when treating any VADA patient to prevent any complications.

A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resistance SiC substrate which not only substantially reduced the number of lattice dislocation defects caused by the heterogeneous junction but also greatly reduced the overall cost. The device exhibited a favorable gate voltage swing of 18.5 V (@IGS = 1 mA/mm) and an off-state breakdown voltage of 763 V. The device dynamic characteristics and hole injection behavior were analyzed using a pulse measurement system, and Ron was found to increase and VTH to shift under the gate lag effect.

Hydrogen sulfide (H2S), an endogenous gasotransmitter, is produced in mammalian systems and is closely associated with pathological and physiological functions. Nevertheless, the complete conversion of H2S is still unpredictable owing to the limited number of sensors for accurate and quantitative detection of H2S in biological samples. In this study, we constructed a disposable electrochemical sensor based on PtNi alloy nanoparticles (PtNi NPs) for sensitive and specific in situ monitoring of H2S released by human breast cancer cells. PtNi alloy NPs with an average size of 5.6 nm were prepared by a simple hydrothermal approach. The conversion of different forms of sulfides (e.g., H2S, HS−, and S2−) under various physiological conditions hindered the direct detection of H2S in live cells. PtNi NPs catalyze the electrochemical oxidation of H2S in a neutral phosphate buffer (PB, pH 7.0). The PtNi-based sensing platform demonstrated a linear detection range of 0.013–1031 µM and the limit of detection was 0.004 µM (S/N = 3). Moreover, the PtNi sensor exhibited a sensitivity of 0.323 μA μM−1 cm−2. In addition, the stability, repeatability, reproducibility, and anti-interference ability of the PtNi sensor exhibited satisfactory results. The PtNi sensor was able to successfully quantify H2S in pond water, urine, and saliva samples. Finally, the biocompatible PtNi electrode was effectively employed for the real-time quantification of H2S released from breast cancer cells and mouse fibroblasts.

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of ~3.3-3.4 V, on/off current ratio of ~2.7 × 107, and ideal factor n of ~2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 mΩ·cm2 and a breakdown voltage VBR of 2.4 kV, this device achieves a power device figure-of-merit VBR2/Ron of 1.5×109 V2Ω-1cm-2.