Search

The table of contents for this issue is presented.

Two dimensional (2D) layered materials have recently attracted significant research interest owing to their unique physical and chemical properties for efficient electrochemical energy storage devices. Here, we present a neoteric approach to fabricate high performance MoS2 thin film supercapacitor electrodes by using a direct magnetron sputtering technique. The novel three-dimensional (3D) porous structure of the MoS2 film exhibits an excellent capacitance of ∼330 F cm−3 along with a high volumetric power and energy density of 40–80 W cm−3 and 1.6–2.4 mW h cm−3, respectively. Moreover, the optimized MoS2 electrode shows an outstanding cyclic stability, yielding capacitance retention over 97% after 5000 cycles of charging/discharging. The contemporary approach to MoS2 supercapacitor electrode fabrication will enable new opportunities in flexible electronic and energy devices. [ABSTRACT FROM AUTHOR]

No abstract available [ABSTRACT FROM AUTHOR]

Small farms, which have maintained flexibility throughout history, have long existed in China and the so‐called “family household system as a cooperative organization” comprehensively playing a diverse socio‐economic function has developed. In addition, trust derived from a unique environment based on a village structure where a few families dwell not to mention “everyone knows each other well” has also become institutionalized. In this setting, a complex and multi‐dimensional property rights could have developed. Moreover, the Confucian order, historically institutionalized in China, has differentiated the respective roles of the public from the private and the center from the local through a network intertwined by relationships (guanxi‐based network), allowing them to be relatively autonomous from each other (embedded autonomy). This institutional tradition of the Chinese society has re‐emerged with the coming of the reform age. The reform reintroduced the revival of the traditional family household, as a cooperative unit for the insiders and, at the same time, as a competitive unit against the outsiders; and its renewed close relationship with the local governments have given birth to the township‐village enterprises. Based on reforms of this nature, which have occurred from the bottom and approved by the center state ex post, China was able to experience the implementation a new form of transition to capitalism, i.e., rural industrialization. In this process, China's guana‐based township‐village enterprises were able to secure the fitness to react to market competition despite their collective ownership nature. [ABSTRACT FROM PUBLISHER]

A115 is a merging galaxy cluster at z ∼ 0.2 with a number of remarkable features, including a giant (∼2.5 Mpc) radio relic, two asymmetric X-ray peaks with trailing tails, and a peculiar line-of-sight velocity structure. We present a multiwavelength study of A115 using optical imaging data from Subaru, X-ray data from Chandra, and spectroscopic data from the Keck/DEIMOS and MMT/Hectospec instruments. Our weak-lensing (WL) analysis shows that the cluster is composed of two subclusters whose mass centroids are in excellent agreement with the two brightest cluster galaxy positions (≲10″). By modeling A115 with a superposition of two Navarro–Frenk–White halos, we determine the masses of the northern and southern subclusters to be and , respectively. Combining the two halos, we estimate the total cluster mass to be at Mpc. These WL masses are significantly (a factor of 3–10) lower than what is implied by the X-ray and optical spectroscopic data. We attribute the difference to the gravitational and hydrodynamic disruption caused by the collision between the two subclusters. [ABSTRACT FROM AUTHOR]

We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy and determined the carrier scattering rate (γ) as a function of the varied carrier density (n). The n-dependent γ(n) was obtained for a series of conditions systematically changed as (10 K, vacuum) → (300 K, vacuum) → (300 K, ambient pressure), which reveals that (1) at low-T, charged impurity (= A/√n) and short-range defect (= B √n) are the major scattering sources which constitute the total scattering γ = A/√n + B √n, (2) among various kinds of phonons populated at room-T, surface polar phonon of the SiO2 substrate is the dominantly scattering source, and (3) in air, the gas molecules adsorbed on graphene play a dual role in carrier scattering as charged impurity center and resonant scattering center. We present the absolute scattering strengths of those individual scattering sources, which provides the complete map of scattering mechanism of CVD graphene. This scattering map allows us to find out practical measures to suppress the individual scatterings, the mobility gains accompanied by them, and finally the ultimate attainable carrier mobility for CVD graphene. [ABSTRACT FROM AUTHOR]