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Graphene and its van der Waals (vdW) heterostructures provide a unique and versatile playground for explorations of strongly correlated electronic phases, ranging from unconventional fractional quantum Hall (FQH) states in a monolayer system to a plethora of superconducting and insulating states in twisted bilayers. However, the access to those fascinating phases has been thus far entirely restricted to transport techniques, due to the lack of a robust energy bandgap that makes graphene hard to access optically. Here we demonstrate an all-optical, non-invasive spectroscopic tool for probing electronic correlations in graphene using excited Rydberg excitons in an adjacent transition metal dichalcogenide monolayer. Due to their large Bohr radii, Rydberg states are highly susceptible to the compressibility of graphene electrons, allowing us to detect the formation of odd-denominator FQH states at high magnetic fields. Owing to its sub-micron spatial resolution, the technique we demonstrate circumvents spatial inhomogeneities in vdW structures, and paves the way for optical studies of correlated states in twisted bilayer graphene and other optically inactive atomically-thin materials., Comment: Main text: 6 pages, 3 figures; Supplementary Information: 23 pages, 12 figures

The allegedly unconventional superconducting phase of magic-angle twisted bilayer graphene (MATBG)1 has been predicted to possess extraordinary thermal properties, as it is formed from a highly diluted electron ensemble with both a record-low carrier density n ~ 10^11 cm-2 and electronic heat capacity Ce < 100 kB. While these attributes position MATBG as a ground-breaking material platform for revolutionary calorimetric applications2, these properties have so far not been experimentally shown. Here we reveal the ultra-sensitive calorimetric properties of a superconducting MATBG device, by monitoring its temperature dependent critical current Ic under continuous laser heating with a wavelength of 1550nm. From the bolometric effect, we are able to extract the temperature dependence of the electronic thermal conductance Gth, which remarkably has a non-zero value Gth = 0.19 pW/K at 35mK and in the low temperature limit is consistent with a power law dependence, as expected for nodal superconductors. Photo-voltage measurements on this non-optimized device reveal a peak responsivity of S = 5.8 x 10^7 V/W when the device is biased close to Ic, with a noise-equivalent power of NEP = 5.5 x 10^-16 WHz^-1/2. Analysis of the intrinsic perfor-mance shows that a theoretically achievable limit is defined by thermal fluctuations and can be as low as NEPTEF < 10^-20 WHz-1/2, with operation speeds as fast as ~ 500 ns. This establishes superconducting MATBG as a revolutionizing active material for ultra-sensitive photon-detection applications, which could enable currently unavailable technologies such as THz photon-number-resolving single-photon-detectors.

The PHENIX collaboration presents a systematic study of $\pi^0$ production from $p$$+$$p$, $p$$+$Al, $p$$+$Au, $d$$+$Au, and $^{3}$He$+$Au collisions at $\sqrt{s_{_{NN}}}=200$ GeV. Measurements were performed with different centrality selections as well as the total inelastic, 0%--100%, selection for all collision systems. For 0%--100% collisions, the nuclear modification factors, $R_{xA}$, are consistent with unity for $p_T$ above 8 GeV/$c$, but exhibit an enhancement in peripheral collisions and a suppression in central collisions. The enhancement and suppression characteristics are similar for all systems for the same centrality class. It is shown that for high-$p_T$-$\pi^0$ production, the nucleons in the $d$ and $^3$He interact mostly independently with the Au nucleus and that the counter intuitive centrality dependence is likely due to a physical correlation between multiplicity and the presence of a hard scattering process. These observations disfavor models where parton energy loss has a significant contribution to nuclear modifications in small systems. Nuclear modifications at lower $p_T$ resemble the Cronin effect -- an increase followed by a peak in central or inelastic collisions and a plateau in peripheral collisions. The peak height has a characteristic ordering by system size as $p$$+$Au $>$ $d$$+$Au $>$ $^{3}$He$+$Au $>$ $p$$+$Al. For collisions with Au ions, current calculations based on initial state cold nuclear matter effects result in the opposite order, suggesting the presence of other contributions to nuclear modifications, in particular at lower $p_T$., Comment: 554 authors from 81 institutions, 21 pages, 13 figures, and 3 tables. Data from 2008, 2014, and 2015. v2 is version accepted for publication in Physical Review C. Plain text data tables for the points plotted in figures for this and previous PHENIX publications are (or will be) publicly available at http://www.phenix.bnl.gov/papers.html

The real-time, in-line analysis of light polarization is critical in optical communication networks, which suffers from the complex systems with numerous bulky opto-electro-mechanical elements tandemly arranged along optical path. Here, we propose a fiber-integrated polarimeter with nano-thickness by vertically stacking three two-dimensional (2D) materials based photodetection units. We demonstrate a self-power-calibrated, ultrafast, unambiguous detection of linear (LP) and circular polarized (CP) light according to the symmetry broken induced linear photogalvanic effects (LPGE) and circular photogalvanic effects (CPGE) in black phosphorous (BP) units, which are twistedly stacked to substitute traditional mechanical rotation of polarizers. As a demonstration, we achieve Hadamard single-pixel polarimetric imaging by the polarimeter to recognize the polarization distributions, showing potential in high-speed polarization-division-multiplexed imaging and real-time polarized endoscopy. This work provides a new strategy for next-generation ultracompact optical and optoelectronic systems, and guides a way for developing high-resolution arrayed devices with multifunctional pixels.

The relaxation time of a single-electron spin is an important parameter for solid-state spin qubits, as it directly limits the lifetime of the encoded information. Thanks to the low spin-orbit interaction and low hyperfine coupling, graphene and bilayer graphene (BLG) have long been considered promising platforms for spin qubits. Only recently, it has become possible to control single-electrons in BLG quantum dots (QDs) and to understand their spin-valley texture, while the relaxation dynamics have remained mostly unexplored. Here, we report spin relaxation times ($T_1$) of single-electron states in BLG QDs. Using pulsed-gate spectroscopy, we extract relaxation times exceeding 200 $\mu$s at a magnetic field of 1.9 T. The $T_1$ values show a strong dependence on the spin splitting, promising even longer $T_1$ at lower magnetic fields, where our measurements are limited by the signal-to-noise ratio. The relaxation times are more than two orders of magnitude larger than those previously reported for carbon-based QDs, suggesting that graphene is a potentially promising host material for scalable spin qubits., Comment: 4 figures 5 pages

We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is reversed. The circular polarization decreases when the hBN barrier thickness increases. These results are interpreted in terms of a spin-dependent charge transfer between the MoSe2 monolayer and the Nickel film. The build-up of circular polarization is observed up to 120 K, mainly limited by the trion emission that vanishes with temperature.

Quantum Hall edge states offer avenues for quasiparticle interferometry, provided that the ratio between phase coherence length and quantum Hall interferometer (QHI) size is large enough. Maximizing this ratio by shrinking the QHI area favors Coulomb interactions, impairing clear interferences observation. Here, we use scanning gate spectroscopy to probe interference regime in antidots-based graphene nano-QHIs, free of localized states (LS). A simple Fabry-Perot model, without Coulomb interaction, reproduces the QHI phenomenology, even in the smallest QHI, highlighting the LS detrimental role., Comment: 5 pages, 4 figures

Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

The simultaneous co-existence and gate-tuneability of the superconducting (SC), magnetic and topological orders in magic angle twisted bilayer graphene (MATBG) open up entirely new possibilities for the creation of complex hybrid Josephson junctions (JJ). Here we report on the creation of gate-defined, magnetic Josephson junctions in MATBG, where the weak link is gate-tuned close to the correlated state at a moir\'e filling factor of {\nu}=-2. A highly unconventional Fraunhofer pattern emerges, which is phase-shifted and asymmetric with respect to the current and magnetic field directions, and shows a pronounced magnetic hysteresis. Interestingly, our theoretical calculations of the JJ with a valley polarized {\nu}=-2 with orbital magnetization as the weak link explain most of these unconventional features without fine tuning the parameters. While these unconventional Josephson effects persist up to the critical temperature Tc ~ 3.5K of the superconducting state, at temperatures below T < 800mK, we observed a pronounced magnetic hysteresis possibly due to further spin-polarization of the {\nu}=-2 state. We demonstrate how the combination of magnetization and its current induced magnetization switching in the MATBG JJ allows us to realize a programmable zero field superconducting diode, which represents a major building block for a new generation of superconducting quantum electronics.

Magic angle twisted trilayer graphene (TTG) has recently emerged as a new platform to engineer strongly correlated flat bands. Here, we reveal the structural and electronic properties of TTG using low temperature scanning tunneling microscopy at twist angles for which superconductivity has been observed. Real trilayer samples deviate from their idealized structure due to a strong reconstruction of the moir\'e lattice, which locks layers into near-magic angle, mirror symmetric domains comparable in size to the superconducting coherence length. The price for this magic relaxation is the introduction of an array of localized twist angle faults, termed twistons. These novel, gate-tunable moir\'e defects offer a natural explanation for the superconducting dome observed in transport and provide an avenue to probe superconducting pairing mechanisms through disorder tuning.

Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric field, its band structure exhibits several off-center Dirac points (so-called Dirac gullies) in each valley. Here, the formation of Dirac gullies and the interaction-induced breakdown of gully coherence is explored via magnetotransport measurements in high-quality Bernal-stacked (ABA) trilayer graphene. In the absence of a magnetic field, multiple Lifshitz transitions as function of electric field and charge carrier density indicating the formation of Dirac gullies are identified. In the quantum Hall regime and high electric fields, the emergence of Dirac gullies is evident as an increase in Landau level degeneracy. When tuning both electric and magnetic fields, electron-electron interactions can be controllably enhanced until the gully degeneracy is eventually lifted. The arising correlated ground state is consistent with a previously predicted nematic phase that spontaneously breaks the rotational gully symmetry.

Magic-angle twisted bilayer graphene (MtBLG) has proven to be an extremely promising new platform to realize and study a host of emergent quantum phases arising from the strong correlations in its narrow bandwidth flat band. In this regard, thermal transport phenomena like thermopower, in addition to being coveted technologically, is also sensitive to the particle-hole (PH) asymmetry, making it a crucial tool to probe the underlying electronic structure of this material. We have carried out thermopower measurements of MtBLG as a function of carrier density, temperature and magnetic field, and report the observation of an unusually large thermopower reaching up to a value as high as $\sim \bf{100\mu V/K}$ at a low temperature of 1K. Surprisingly, our observed thermopower exhibiting peak-like features in close correspondence to the resistance peaks around the integer Moire fillings, including the Dirac Point, violating the Mott formula. %Surprisingly, our observed thermopower exhibits peak-like features in close correspondence to the resistance peaks around the integer Moire fillings, including the Dirac Point, which completely violates the Mott formula. We show that the large thermopower peaks and their %non-monotonic dependence with temperature and magnetic field associated behaviour arise from the emergent highly PH asymmetric electronic structure due to the cascade of Dirac revivals. Furthermore, the thermopower shows an anomalous peak around the superconducting transition on the hole side and points towards the possible role of enhanced superconducting fluctuations in MtBLG.

The dominance of Coulomb interactions over kinetic energy of electrons in narrow, non-trivial moir\'{e} bands of magic-angle twisted bilayer graphene (TBG) gives rise to a variety of correlated phases such as correlated insulators, superconductivity, orbital ferromagnetism, Chern insulators and nematicity. Most of these phases occur at or near an integer number of carriers per moir\'{e} unit cell. Experimental demonstration of ordered states at fractional moir\'{e} band-fillings at zero applied magnetic field $B$, is a challenging pursuit. In this letter, we report the observation of states near half-integer band-fillings of $\nu\approx 0.5$ and $\pm3.5$ at $B\approx 0$ in TBG proximitized by tungsten diselenide (WSe$_2$) through magnetotransport and thermoelectricity measurements. A series of Lifshitz transitions due to the changes in the topology of the Fermi surface implies the evolution of van Hove singularities (VHSs) of the diverging density of states (DOS) at a discrete set of partial fillings of flat bands. Furthermore, at a band filling of $\nu\approx-0.5$, a symmetry-broken Chern insulator emerges at high $B$, compatible with the band structure calculations within a translational symmetry-broken supercell with twice the area of the original TBG moir\'{e} cell. Our results are consistent with a spin/charge density wave ground state in TBG in the zero $B$-field limit., Comment: 16 pages, 16 figures

The discovery of magic-angle twisted trilayer graphene (tTLG) adds a new twist to the family of graphene moir\'e. The additional graphene layer unlocks a series of intriguing properties in the superconducting phase, such as the violation of Pauli limit and re-entrant superconductivity at large in-plane magnetic field. In this work, we integrate magic-angle tTLG into a double-layer structure to study the superconducting phase. Utilizing proximity screening from the adjacent metallic layer, we examine the stability of the superconducting phase and demonstrate that Coulomb repulsion competes against the mechanism underlying Cooper pairing. Furthermore, we use a combination of transport and thermodynamic measurements to probe the isospin order, which points towards a spin-polarized and valley-unpolarized isospin configuration at half moir\'e filling, and for the nearby fermi surface. Our findings provide important constraints for theoretical models aiming to understand the nature of superconductivity. A possible scenario is that electron-phonon coupling stabilizes a superconducting phase with a spin-triplet, valley singlet order parameter.

Non-equilibrium dynamics of strongly correlated systems constitutes a fascinating problem of condensed matter physics with many open questions. Here we investigate the relaxation dynamics of Landau-quantized electron system into spin-valley polarized ground state in a gate-tunable MoSe$_2$ monolayer subjected to a strong magnetic field. The system is driven out of equilibrium with optically injected excitons that depolarize the electron spins and the subsequent electron spin-valley relaxation is probed in time-resolved experiments. We demonstrate that the relaxation rate at millikelvin temperatures sensitively depends on the Landau level filling factor: it becomes faster whenever the electrons form an integer quantum Hall liquid and slows down appreciably at non-integer fillings. Our findings evidence that valley relaxation dynamics may be used as a tool to investigate the interplay between the effects of disorder and strong interactions in the electronic ground state., Comment: Main text: 6 pages, 3 figures; Supplemental Material: 4 pages, 3 figures

The structure of edge modes at the boundary of quantum Hall (QH) phases forms the basis for understanding low energy transport properties. In particular, the presence of ``upstream'' modes, moving against the direction of charge current flow, is critical for the emergence of renormalized modes with exotic quantum statistics. Detection of excess noise at the edge is a smoking gun for the presence of upstream modes. Here we report on noise measurements at the edges of fractional QH (FQH) phases realized in dual graphite-gated bilayer graphene devices. A noiseless dc current is injected at one of the edge contacts, and the noise generated at contacts at $L= 4\,\mu$m or $10\,\mu$m away along the upstream direction is studied. For integer and particle-like FQH states, no detectable noise is measured. By contrast, for ``hole-conjugate'' FQH states, we detect a strong noise proportional to the injected current, unambiguously proving the existence of upstream modes. The noise magnitude remaining independent of length together with a remarkable agreement with our theoretical analysis demonstrates the ballistic nature of upstream energy transport, quite distinct from the diffusive propagation reported earlier in GaAs-based systems. Our investigation opens the door to the study of upstream transport in more complex geometries and in edges of non-Abelian phases in graphene.

We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear edge photocurrent is developed. Comparison of the experimental data and theory demonstrates that the nonlinearity of the photocurrent is caused by the interplay of two mechanisms, i.e. by direct inter-band optical transitions and Drude-like absorption. Both photocurrents saturate at high intensities, but have different intensity dependencies and saturation intensities. The total photocurrent shows a complex sign-alternating intensity dependence. The functional behaviour of the saturation intensities and amplitudes of both kinds of photogalvanic currents depending on gate voltages, temperature, radiation frequency and polarization is in a good agreement with the developed theory., Comment: 10 Figures

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices., Comment: 22 pages, 11 figures

Twisted bilayer graphene (TBG) provides an example of a system in which the interplay of interlayer interactions and superlattice structure impacts electron transport in a variety of non-trivial ways and gives rise to a plethora of interesting effects. Understanding the mechanisms of electron scattering in TBG has, however, proven challenging, raising many questions about the origins of resistivity in this system. Here we show that TBG exhibits high-temperature magnetooscillations originating from the scattering of charge carriers between TBG minivalleys. The amplitude of these oscillations reveals that interminivalley scattering is strong, and its characteristic time scale is comparable to that of its intraminivalley counterpart. Furthermore, by exploring the temperature dependence of these oscillations, we estimate the electron-electron collision rate in TBG and find that it exceeds that of monolayer graphene. Our study demonstrates the consequences of the relatively small size of the superlattice Brillouin zone and Fermi velocity reduction on lateral transport in TBG., Comment: 10 pages, 6 figures

In this study, the electrostatically induced quantum confinement structure, quantum point contact, has been realized in p-type trilayer tungsten diselenide-based van der Waals heterostructure with modified van der Waals contact method with degenerately doped transition metal dichalcogenide crystals. Clear quantized conductance and pinch-off state through the one-dimensional confinement were observed by dual-gating of split gate electrodes and top gate. Conductance plateaus were observed at step of 0.5 $\times$ 2e$^{2}$/h at zero and high magnetic field in addition to quarter plateaus at a finite bias voltage condition indicating the signature of spin-polarized quantum point contact realization., Comment: Paper:25 pages and 4 figures, SI: 13 pages and 10 figures, accepted for publication in Nano Letters

Electrical conductance measurements have limited scope in identifying Andreev edge states (AESs), which form the basis for realizing various topological excitations in quantum Hall (QH) - superconductor (SC) junctions. To unambiguously detect AESs, we measure shot noise along with electrical conductance in a graphene based QH-SC junction at integer filling nu=2. Remarkably, we find that the Fano factor of shot noise approaches half when the bias energy is less than the superconducting gap, whereas it is close to zero above the superconducting gap. This is striking, given that, at the same time, the electrical conductance remains quantized at 2e^2/h within and above the superconducting gap. A quantized conductance is expected to produce zero shot noise due to its dissipationless flow. However, at a QH-SC interface, AESs carry the current in the zero-bias limit and an equal mixing of electron and hole like states produces half of the Poissonian shot noise with quantized conductance. The observed results are in accord with our detailed theoretical calculations of electrical conductance and shot noise based on non-equilibrium Green's function method in the presence of disorder. Our results pave the way in using shot noise as a detection tool in the search of exotic topological excitations in QH-SC hybrids.

Two-dimensional layered materials offer the possibility to create artificial vertically stacked structures possessing an additional degree of freedom - $the$ $interlayer$ $twist$. We present a comprehensive optical study of artificially stacked bilayers (BLs) MoS$_2$ encapsulated in hexagonal BN with interlayer twist angle ranging from 0 to 60 degrees using Raman scattering and photoluminescence spectroscopies. It is found that the strength of the interlayer coupling in the studied BLs can be estimated using the energy dependence of indirect emission versus the A$_\textrm{1g}$-E$_\textrm{2g}^1$ energy separation. Due to the hybridization of electronic states in the valence band, the emission line related to the interlayer exciton is apparent in both the natural (2H) and artificial (62$^\circ$) MoS$_2$ BLs, while it is absent in the structures with other twist angles. The interlayer coupling energy is estimated to be of about 50 meV. The effect of temperature on energies and intensities of the direct and indirect emission lines in MoS$_2$ bilayers is also quantified., Comment: 15 pages including Appendices

The investigation of excitons in van-der-Waals heterostructures has led to profound insights into the interplay of crystal symmetries and fundamental effects of light-matter coupling. In particular, the polarization selection rules in undistorted, slightly twisted heterostructures of MoSe$_2$/WSe$_2$ were found to be connected with the Moir\'e superlattice. Here, we report the emergence of a significant degree of circular polarization of excitons in such a hetero-structure upon non-resonant driving with a linearly polarized laser. The effect is present at zero magnetic field, and sensibly reacts on perpendicularly applied magnetic field. The giant magnitude of polarization, which cannot be explained by conventional birefringence or optical activity of the twisted lattice, suggests a kinematic origin arising from an emergent pyromagnetic symmetry in our structure, which we exploit to gain insight into the microscopic processes of our device., Comment: Main text: 8 pages, 3 figures. Supplementary: 2 pages

We use an exact analytical technique [Phys. Rev. B \textbf{101}, 115405 (2020), Phys. Rev. B \textbf{102}, 165117 (2020)] to recover the surface Green's functions for Bernal (ABA) and rhombohedral (ABC) graphite. For rhombohedral graphite we recover the predicted surface flat bands. For Bernal graphite we find that the surface state spectral function is similar to the bilayer one, but the trigonal warping effects are enhanced, and the surface quasiparticles have a much shorter lifetime. We subsequently use the T-matrix formalism to study the quasiparticle interference patterns generated on the surface of semi-infinite ABA and ABC graphite in the presence of impurity scattering. We compare our predictions to experimental STM data of impurity-localized states on the surface of Bernal graphite which appear to be in a good agreement with our calculations., Comment: 13 pages, 17 figures

We present inverted spin-valves fabricated from CVD-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the art bilayer graphene spin-valves. This is made possible by a PDMS droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate-dependent Hanle measurements show spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 $\mu$m at room temperature combined with a charge carrier mobility of $\approx$ 24 000 cm$^{2}$(Vs)$^{-1}$ for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-graphene and even exfoliated single-layer graphene., Comment: 14 pages, 8 figure

The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS$_2$ and both top and bottom gate electrodes. For asymmetrically biased top and bottom gates, electrons accumulate in the layer closest to the positively biased electrode. In this way, the three-layer MoS$_2$ can be tuned to behave electronically like a monolayer. In contrast, applying a positive voltage on both gates leads to the occupation of all three layers. Our analysis of the Shubnikov--de Haas oscillations originating from different bands lets us attribute the corresponding carrier densities in the top and bottom layers. We find a twofold Landau level degeneracy for each band, suggesting that the minima of the conduction band lie at the $\pm K$ points of the first Brillouin zone. This is in contrast to band structure calculations for zero layer asymmetry, which report minima at the $Q$ points. Even though the interlayer tunnel coupling seems to leave the low-energy conduction band unaffected, we observe scattering of electrons between the outermost layers for zero layer asymmetry. The middle layer remains decoupled due to the spin-valley symmetry, which is inverted for neighboring layers. When the bands of the outermost layers are energetically in resonance, interlayer scattering takes place, leading to an enhanced resistance and to magneto-interband oscillations., Comment: 12 pages, 8 figures

Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be applied preferably right after stacking. We demonstrate that confocal Raman spectroscopy can be utilized to spatially map the twist angle in stacked bilayer graphene for angles between 6.5{\deg} and 8{\deg} when using a green excitation laser. The twist angles can directly be extracted from the moir\'e superlattice-activated Raman scattering process of the transverse acoustic (TA) phonon mode. Furthermore, we show that the width of the TA Raman peak contains valuable information on spatial twist angle variations on length scales below the laser spot size of ~ 500 nm., Comment: 14 pages, 10 figures

Moir\'e superlattices of two-dimensional (2D) materials with a small twist angle are thought to exhibit appreciable flexoelectric effect, though unambiguous confirmation of their flexoelectricity is challenging due to artifacts associated with commonly used piezoresponse force microscopy (PFM). For example, unexpectedly small phase contrast ($\sim$$8^{\circ}$) between opposite flexoelectric polarizations was reported in twisted bilayer graphene (tBG), though theoretically predicted value is $180^{\circ}$. Here we developed a methodology to extract intrinsic moir\'e flexoelectricity using twisted double bilayer graphene (tDBG) as a model system, probed by lateral PFM. For small twist angle samples, we found that a vectorial decomposition is essential to recover the small intrinsic flexoelectric response at domain walls from a large background signal. The obtained three-fold symmetry of commensurate domains with significant flexoelectric response at domain walls is fully consistent with our theoretical calculations. Incommensurate domains in tDBG with relatively large twist angles can also be observed by this technique. Our work provides a general strategy for unraveling intrinsic flexoelectricity in van der Waals moir\'e superlattices while providing insights into engineered symmetry breaking in centrosymmetric materials.

When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhibiting unique ferroelectricity and non-linear transport properties related to the antiphase stacking and Berry-curvature dipole. Here we investigate the electronic band dispersions of multilayer WTe2 (2-5 layers), by performing laser-based micro-focused angle-resolved photoelectron spectroscopy on exfoliated-flakes that are strictly sorted by n and encapsulated by graphene. We clearly observed the insulator-semimetal transition occurring between 2- and 3-layers, as well as the 30-70 meV spin-splitting of valence bands manifesting in even n as a signature of stronger structural asymmetry. Our result fully demonstrates the possibility of the large energy-scale band and spin manipulation through the finite n stacking procedure., Comment: 19 pages, 4 figures. M. Sakano, Y. Tanaka, and S. Masubuchi equally contributed to this work

Strong electron correlation and spin-orbit coupling (SOC) provide two non-trivial threads to condensed matter physics. When these two strands of physics come together, a plethora of quantum phenomena with novel topological order have been predicted to emerge in the correlated SOC regime. In this work, we examine the combined influence of electron correlation and SOC on a 2-dimensional (2D) electronic system at the atomic interface between magic-angle twisted bilayer graphene (tBLG) and a tungsten diselenide (\WSe) crystal. In such a structure, strong electron correlation within the moir\'e flatband stabilizes correlated insulating states at both quarter and half-filling, whereas SOC transforms these Mott-like insulators into ferromagnets, evidenced by robust anomalous Hall effect with hysteretic switching behavior. The coupling between spin and valley degrees of freedom is unambiguously demonstrated as the magnetic order is shown to be tunable with an in-plane magnetic field, or a perpendicular electric field. In addition, we examine the influence of SOC on the isospin order and stability of superconductivity. Our findings establish an efficient experimental knob to engineer topological properties of moir\'e bands in twisted bilayer graphene and related systems., Comment: 6 pages, 4 figures and supplementary information

We demonstrate superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS$_2$), a layered semiconductor with highly relevant electronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS$_2$ regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction dependent gap characteristics, suggesting a superconducting proximity effect. Magnetoresistance measurements show that the bandstructure and the high intrinsic carrier mobility remain intact in the bulk of the MoS$_2$. This type of VIA contact is applicable to a large variety of layered materials and superconducting contacts, opening up a path to monolayer semiconductors as a platform for superconducting hybrid devices.

Magnons enable transferring a magnetic moment or spin over macroscopic distance. In quantum Hall ferromagnet, it has been predicted in the early 90s that spin and charges are entangled, meaning that any change of the spin texture modifies the charge distribution. As a direct consequence of this entanglement, magnons carry an electric dipole moment. Here we report the first evidence of the existence of this electric dipole moment in a graphene quantum Hall ferromagnet using a Mach-Zehnder interferometer as a quantum sensor. By propagating towards the interferometer through an insulating bulk, the magnon electric dipole moment modifies the Aharonov-Bohm flux through the interferometer, changing both its phase and its visibility. In particular, we relate the phase shift to the sign of this electric dipole moment, and the exponential loss of visibility to the flux of emitted magnons. Finally, we probe the emission energy threshold of the magnons close to filling factor v=1. Approaching v=0, we observe that the emission energy threshold diminishes towards zero, which might be linked to the existence of gapless mode in the canted-antiferromagnetic (CAF) phase at v=0. The detection and manipulation of magnons based on their electric dipole open the field for a new type of coherent magnon quantum circuits that will be electrostatically controlled., Comment: 11 pages, 4 figures

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes., Comment: 5 pages, 4 figures

We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bright (singlet and triplet) and dark (spin- and momentum-forbidden) negative trions as well as the phonon replicas of the latter optically-inactive complexes. The semi-dark trions and negative biexcitons are distinguished. Based on their experimentally extracted and theoretically calculated $g$-factors, we identify three distinct families of emissions due to exciton complexes in WS$_2$: bright, intravalley and intervalley dark. The $g$-factors of the spin-split subbands in both the conduction and valence bands are also determined., Comment: Manuscript: 7 pages, 5 figures; SI: 5 pages, 3 figures

The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions, has not yet been measured in a single flake. In particular, the striking prediction of a divergent diamagnetic response at zero doping calls for an experimental test. Using a highly sensitive Giant Magnetoresistance sensor (GMR) we have measured the gate voltage-dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with theoretical predictions starting from the work of Mc Clure \cite{McClure1956}. Our measurements open a new field of investigation of orbital currents in graphene and 2D topological materials, offering a new means to monitor Berry phase singularities and explore correlated states generated by combined effects of Coulomb interactions, strain or moir\'e potentials., Comment: 6 pages 5 figures and supplemental material

Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwidth, as well as the electronic temperature of graphene. Here, we demonstrate that the emission wavelength of graphene$'$ s broadband hot carrier photoluminescence can be tuned by integration on photonic cavities, while thermal management can be achieved by out-of-plane heat transfer to hexagonal boron nitride. Our results pave the way to graphene-based ultrafast broadband light emitters with tunable emission., Comment: 22 pages, 5 Figures