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Experiments have been undertaken to explore the possibility of rapidly melting and alloying thin metal films by flashlamp annealing (FLA). Aluminum layers of a thickness of 100 to 500 nm have been deposited on α-titanium substrates by magnetron sputtering. The structures have then been heat-treated by FLA in air using flash duration of 20 msec, energy density of 60 to 100 J/cm2, and maximal temperature of 800 to 1660°C. X-ray diffraction (XRD) and elastic recoil detection analysis (ERDA) have been used for sample characterization. The as-deposited Al films are amorphous/nanocrystalline (grain size ~ 5 nm) in nature. Heat treatment by FLA has been found to produce an intermetallic TiAl3 phase. For comparison, under conditions of standard furnace annealing, the formation of this compound in the thin film reaction of Al and Ti necessitates anneal temperatures and times typically in excess of 400°C and 1 h, respectively. Furthermore, the intermetallic TiAl3 phase formed by FLA appears to be present in a region extending from the surface to a depth of a few hundred nm. Importantly, no pure Al phase has been detected either at the surface or in the substrate bulk. XRD measurements have also identified negligibly small amounts of Al and Ti oxide phases. It is expected that one may obtain TiAl phases other than TiAl3 by varying both the film composition (i.e. by co-depositing Al and Ti instead of Al only) and the FLA parameters. The results of this study indicate that FLA of thin metal films is a promising technique for rapid surface alloying and compound formation. For the particular case of the Ti/Al system, t he i ntermetal lc if il ms s o f abricated m ay h ave r el evance t o h igh-temperature m icroel ectronics applications (diffusion barriers, conduction lines etc) as well as to the oxidation protection of titanium and titaniumaluminum alloy surfaces by forming suitable intermetallic TiAl phases.

We present two unconventional routes of embedding superconducting nanolayers in a semiconducting environment. On the one hand, ion implantation and subsequent annealing have been used to prepare intrinsic superconducting thin-films of Ga-doped germanium (Ge:Ga) with Tc of 0.5 to 1.2 K. On the other hand, the same technique has been applied to fabricate thin amorphous Ga-rich layers in silicon (Si:Ga) revealing a Tc of about 7 K. Extended structural investigations by means of XTEM, EDX, RBS/C, and SIMS have been performed in addition to low-temperature electrical transport and magnetization measurements. A narrow window of preparation parameters turns out to be necessary to obtain best sample properties in a reproducible way. While Ge:Ga films scale 60 - 100 nm and reveal a small critical current density Jc ≈ 3 A/cm2, Si:Ga layers exhibit Jc > 1 kA/cm2 and a thickness of 15 nm. Relative high and anisotropic critical fields have been found for both nanostructures proving their quasi-two-dimensionality. The implementation of prospective microstructuring may offer an on-chip combination of super- and semiconducting circuits that could be integrated in novel heterostructured devices.

We demonstrate the feasibility of embedding superconducting Ga nanolayers in commercial (100) oriented silicon wafers and discuss the possibility of potential device applications [1]. Ion implantation and rapid thermal annealing, known as versatile tools of microelectronic technology, have been used for inserting and distributing a gallium dose of up to 4 × 1016 cm2. As proven by structural analysis, a 10 nm thin layer of amorphous Ga-rich precipitates forms during annealing at 600 - 700°C. These structures exhibit a superconducting transition at 7 K. Extended resistivity and magnetization measurements reveal in-plane critical fields around 14 T and critical current densities exceeding 2 kA/cm2. In summary, we proceed with an optimistic outlook concerning the implementation of prospective microstructuring. After all, this would be the next step towards the development of novel semiconductor-based superconducting devices.

Germanium is currently considered as a potential replacement for silicon devices [1]. The formation of heavily doped, shallow junctions in Ge by ion im-plantation and appropriate annealing techniques is under investigation [2, 3]. In contrast to Si the Ge surface is severely affected by irradiation damage. Im-plantation into the uncovered Ge surface leads to sur-face roughening and even porous layers [3]. Therefore, the Ge surface must be protected by a thin cover layer, which is commonly a sputtered SiO2-layer between 10 and 30 nm. This cover layer remains on the Ge sample also during annealing. For light dopants like B or P this oxide layer remains stable and smooth. However, with increasing ion mass and fluence surface erosion and oxide degradation can occur. A relatively heavy ion of interest is Ga [3]. It is a shallow acceptor with a high solid solubility in Ge. We studied the effect of Ga im-plantation through a SiO2 cover layer.

High dose germanium (Ge) ion implantation in silicon (Si) substrate in combination with flash lamp irradiation was used to produce a thin SiGe surface layer. Due to the reduced melting temperature of the SiGe alloys, the possibility to form an undesirable facetted liquid/solid interface, well known for pulse melting in the millisecond time regime, was found to decrease significantly using ion beam implantation technique. The formation of a dislocation network in the surface SiGe layer and strain were evidenced by transmission electron microscopy and -Raman spectroscopy measurements, respectively.

Recently, it was shown that it is possible to obtain efficient electroluminescence (EL) from UV to IR by implanting lanthanides into the oxide layer of metal-oxide semiconductor (MOS) structures [1]. The best efficiencies could be achieved on a Tb-implanted light emitter with an external quantum efficiency of 16% and a corresponding power efficiency of 0.3%. With these electrically driven Si-based light emitting devices, also called MOSLEDs, it is possible to build an integrated biosensor for the detection of organic molecules like estrogene, e.g. see Ref. [2]. For this purpose, the intensity and stability of the emitted EL are the most critical properties of the light emitters. Usually, lanthanide implanted MOSLEDs show a quenching of the EL-signal with time, which can be attributed to charge trapping in the oxide layer. In contrast to this normal wear-out phenomenon, Eu-implanted MOSLEDs can show a rise in the EL-signal during the operation time of the device [3]. Due to this anomalous wear-out phenomenon, Eu-implanted MOSLEDs offer the possibility to build a device with an extremely stable EL if the occurring processes can be better understood. For this reason, an intensive investigation was performed on Eu-implanted MOSLEDs exposed to different annealing temperatures and times. Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) were used to trace the growth of Eu / Eu oxide clusters and the diffusion of Eu to the interfaces of the gate oxide layer, respectively. Both of them were induced by the annealing process. Resonant nuclear reaction analysis (rNRA) was used to measure the hydrogen depth profile in the dielectric. Current-voltage (I-V) characteristics, the EL decay times (τ) and the evolution of the voltage under constant current injection (Vcc) as well as the evolution of the EL spectrum with injected charge (EL-Qinj) were studied with respect to charging and trapping phenomena in the oxide layer in order to reveal details in the occurring wear-out mechanism of the EL. It will be shown, that for certain annealing conditions the EL intensity of Eu-implanted SiO2 layers can increase during constant current injection which is followed by the known EL quenching. In extreme cases this rise may amount up to two orders of magnitude. The EL behaviour will be correlated with the microstructural and electrical properties of the devices. A qualitative model for the anomalous wear-out phenomenon is proposed.

In this paper detailed studies on modification of structural and magnetic properties of Ni-doped hafnium oxide (HfO2) thin films are reported. We used 200 keV Ni beam for doping of Ni. For homogeneous dispersion and activation of doped Ni ions, 120 MeV Ni swift heavy ions (SHI) irradiation was used. This unique combination of Ni doping by ion beam and dispersing and activating by Ni SHI irradiation of HfO2 films is reported for the first time. The origin of ferromagnetism in the Ni-doped HfO2 thin films is investigated. We demonstrate the cluster free nature of our film using cross-sectional high resolution transmission microscopy and magnetization versus temperature data. Rutherford backscattering data are used to establish that Ni ions are implanted in the HfO2 matrix at the predicted location. Dispersion of implanted Ni and lattice defects such as oxygen vacancies are attributed to be the main source of ferromagnetism.

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The discovery of superconductivity in heavily boron-doped diamond [1] has demonstrated that group-IV semiconductors can become superconducting upon carrier doping even at ambient conditions. Meanwhile superconductivity has been found in further heavily doped group-IV semiconductors such as Si and SiC [2]. Compared to these semiconductors, Ge seems to be less promising for realizing superconductivity as was based upon estimates of the electron-phonon coupling strength [3]. The challenge is to achieve extremely high hole concentrations which are commonly limited by the equilibrium solid solubility of the acceptor. Nevertheless, we succeeded in making Ge superconducting as recently reported [4]. A nonequilibrium doping process consisting of 100 keV Ga+-ion implantation with a fluence of 21016cm-2 and subsequent 3 ms flash-lamp annealing (FLA) enabled hole concentrations as high as 1.41021 cm-2. The superconducting state was observed in a thin (~60 nm) Ge layer with a maximum Ga content of about 8 at.% at critical temperatures below 0.5 K. From the measured critical parameters it follows that Ga-doped Ge is a type-II superconductor with a large Ginzburg-Landau parameter (>103). The structure as well as the superconducting properties of the Ga-doped Ge layers depend sensitively on the preparation conditions as shown in Fig. 1. In search for higher transition temperatures, implantation and annealing conditions were varied in a more comprehensive study. Critical temperatures above 1 K were obtained for samples either implanted with 41016 cm-2 and flash-lamp annealed at 52 Jcm-2 or implanted with 21016 cm-2 and subjected to rapid thermal annealing (RTA) at 910°C for 60 s (Fig. 2). Critical magnetic fields perpendicular and parallel to the Ge:Ga plane up to about 0.3 and 1 T, respectively, were observed. Thus superconductivity in thin Ge:Ge layers is a robust effect and could be utilized in superconducting quantum devices. [1] E. A. Ekimov, V. A. Sidorov, E. D. Bauer, et al., Nature 428, 542 (2004) [2] K. Iakoubovskii, Physica C 469, 675 (2009) [3] L. Boeri, J. Kortus, O. K. Anderson, J. Phys. Chem. Solids 67, 552 (2006) [4] T. Herrmannsdörfer, V. Heera, O. Ignatchik, et al., Phys. Rev. Lett. 102, 217003 (2009)

Die Erfindung beschreibt ein Herstellungsverfahren von Halbleiterstrukturen auf Silizium-Germanium-Basis. Durch die Germanium-Ionenimplantation und die anschließende Bestrahlung mit einem Lichtimpuls können die Germanium legierten Gebiete kurzzeitig und lokal aufgeschmolzen werden und die entstandenen Schäden während der Implantation an den Profilkanten ausgeheilt werden. Dadurch wird eine erhöhte Effizienz und rationellere Produktion erreicht, die vor allem bei der Produktion von Solarzellen verwendet werden kann. Weiterhin können mit diesem Verfahren verspannte Silizium-Halbleiterstrukturen hergestellt werden.

Hydrogen is ubiquitous and it is often difficult to remove hydrogen from synthesis of nano-materials. Therefore, studying interaction of hydrogen with metals and semiconductors is of immense interest owing to the development of efficient materials for the storage of hydrogen and gas-sensing devices.

We report recent discoveries of superconductivity in Ga-doped germanium fabricated by ion implantation and subsequent flash-lamp or oven annealing. Tuning the preparation parameters allows for varying both charge-carrier and Ga concentration in the resulting roughly 100 nm thin nano- or single-crystalline layers. Transport measurements on systematically prepared samples reveal that besides a needed charge-carrier concentration of more than 0.4 atom%, superconductivity occurs to be sensitive on the implanted Ga content which may also be attributed to a change in the phonon properties. Onset transition temperatures up to 1.4 K have been found for almost 10 atom% Ga. Further, we observe in-plane critical fields exceeding 1 T and being close to the Pauli-Clogston limit. An exceptionally low Cooper-pair density of around 1015 cm−3 turns out the extreme type-II character of superconductivity. Finally, our work adds to our previous report [1] and may help to understand superconductivity in doped elemental semiconductors in general.

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A strong decrease of the carrier mobility of the nanometer thick silicon films imposes limitation on the application of SOI structures in the current silicon planar CMOS technology. The formation of heterostructures-on-insulator is a way to increase carrier mobility in the nanometer scale layers.

Using combined electroluminescence (EL) and photoluminescence (PL) studies we establish that the energy transfer process from the Er3+ to the Ge-related oxygen-deficiency centers (GeODCs) plays the key role in enhancing the 404 nm EL intensity in Ge-rich SiO2. Er doping induced structural modification does not appear to be relevant, which is deduced from the 404 nm PL quenching with increasing Er concentration, implying a gradual loss of GeODCs. In contrast to PL, the 404 nm EL intensity increases by 0.3% Er doping followed by a gradual decrease in intensity for higher Er concentrations, which is described in terms of a competition between the energy transfer process and the gradual segregation of Er due to the destruction of GeODCs with Er doping. This fact is further discussed in the light of ab initio molecular orbital calculations.

We report the first observation of superconductivity in heavily p-type doped germanium at ambient pressure conditions. Using Ga as dopant, we have produced Ge:Ga samples by ion-beam implantation and subsequent short-term (msec) flash-lamp annealing. The combination of these techniques allows for Ga-doping levels up to 6%, not accessible to any other preparation method so far. The superconducting critical parameters strongly depend on the annealing conditions. Transport measurements reveal Tc up to 0.5 K and anisotropic Bc(T) with a linear temperature dependence reflecting the two-dimensional character of the superconducting state in the ~ 60 nm thin Ge:Ga layer. We find critical magnetic in-plane fields even larger than the Pauli-Clogston limit. After its finding in Si [1] and diamond [2], this work reports another unexpected observation of superconductivity in doped elemental semiconductors. Our fabrication techniques are compatible to industrial semiconductor processing and allow for on-chip superconductivity in integrated circuits.

Silicon carbide with its hexagonal and cubic polytypes is one of the wide band-gap semiconductors used for high temperature applications. Obviously the growth of cubic SiC on Si would be very advantageous, because very large, high quality substrates would then be available at relatively low cost.

Recently, superconductivity was detected in heavily boron doped group IV semiconductors like diamond (cB=2.8 at%, TC=4 K) [1] and silicon (cB=1.2 at%, TC=0.34 K) [2]. These unexpected results initiated a new debate about the possibility and the mechanism of superconductivity in doped semiconductors. Theoretical calculations, based on the classical electron-phonon coupling mechanism, demonstrated that critical temperatures in diamond can clearly exceed 1 K for acceptor concentrations higher than 5 at% [3]. However, unrealistic high doping concentrations are predicted for observable superconductivity in Si or even Ge. It was an open question whether superconductivity can be achieved in doped Ge. In order to fabricate group IV semiconductors with acceptor concentrations much higher than their equilibrium solid solubility exotic doping methods like high-pressure-high-temperature synthesis [1] or gas immersion laser doping [2] were applied. We used a more conventional doping process consisting of high dose implantation and 3 ms flash lamp or 60 s rapid thermal annealing in order to form Ge layers with Ga concentrations up to 6 at%. According to Hall effect measurements the hole concentrations are in the range between 0.3x1021 and 1.4x1021 cm-3. Superconductivity was found in the Ga-doped Ge samples below critical temperatures between 0.1 and 0.5 K in dependence on the annealing conditions. References [1] E. A. Ekimov et al., Nature 428 (2004) 542 [2] E. Bustarret et al., Nature 444 (2006) 465 [3] L. Boeri, J. Kortus, O. K. Anderson, J. Phys. Chem. Solids 67 (2006) 552

The formation of heterostructures-on-insulator is a way to increase the carrier mobility in the nanometer-scale layers. The electron mobility in InSb is about 50 times higher than that in bulk silicon. The formation of Si/InSb on insulator heterostructures may provide an increase of effective electron mobility in the nanometer scale SOI films. In this work, we present the results on the interface mediated endotaxial growth of InSb nanocrystalline phase at the Si/SiO2 bonding interface of silicon-on-insulator (SOI) structure.

We present the microstructural evolution in Ge-rich SiO2 doped with Er under different fabrication conditions. At sufficiently high Er contents and annealing temperatures, the Er2O3 and Er2Ge2O7 phases are eventually formed, leading to an electroluminescence quenching of Ge-related oxygen-deficiency centers. The correlation between the microstructure and electroluminescence is discussed based on: (i) an Er doping dependent fragmentation/amorphization of Ge nanocrystals, (ii) a temperature dependent Ge diffusion toward the Si/SiO2 interface, and (iii) the formation of different Er phases.

We report the first observation of superconductivity in heavily p-type doped germanium at ambient pressure conditions. Using Ga as dopant, we have produced a series of Ge:Ga samples by ion-beam implantation and subsequent short-term (msec) flash-lamp annealing. The combination of these techniques allows for Ga concentrations up to 6 %, i.e., a doping level which is clearly larger than the solubility limit and not accessible to any other method so far. Transport measurements reveal superconducting transitions with Tc up to 0.5 K. In more detail, we observe a strong dependence of the superconducting critical parameters on the annealing conditions. Further, we find a strong anisotropy of the superconducting critical field reflecting the two-dimensional character of the superconducting state in the ~ 60 nm thin Ge:Ga layer. We find critical magnetic in-plane fields following a linear temperature dependence up to a maximum field which is even larger than the Pauli-Clogston limit. Ge:Ga appears to be a superconductor in the extreme type-II limit with a very small Cooper-pair density. After its finding in Si [1] and diamond [2], our work reports another unexpected observation of superconductivity in doped elemental semiconductors.

Si nanocrystals (NCs) have widely been used as sensitizers in Er-doped SiO2 layers where following the recombination of excitons (electron-hole pairs) in optically excited Si NCs energy is transferred to the higher energy levels of the 4f shell of Er3+ ions and subsequently decay radiatively via 4I13/2 → 4I15/2 transition. This as a result emits light at ~1.53 m, which coincides well the silica-based optical fibers. However, the temperature and concentration quenching of Er3+ ions in Si-rich SiO2 matrices are the basic obstacles for practical application. In the quest for an alternative host material, Ge-rich SiO2 layers have presently attracted a considerable interest due to strong quantum confinement effect and a better control of the surface oxidation of Ge NCs with respect to Si-NCs. In fact, the growth of Er-doped Ge nanoperticles embedded in a SiO2 layer and the photoluminescence (PL) properties have recently been studied. Despite progress in PL response, electrically pumped light-emitting devices (LEDs) are highly required from the optoelectronic standpoints. We have investigated Ge NCs embedded in a metal-oxide semiconductor (MOS) structure co-doped with Er3+ ions and the corresponding electroluminescence (EL). Here we follow the two step implantation approach: (i) First, 130 keV Ge ions have been implanted (dose of 2–6E16 ions/cm2) into a thermally grown 200 nm thick SiO2 layer followed by furnace annealing (FA) at 950 C for 60 min, which is followed by (ii) 250 keV Er implantation (dose of 1-5E15 ions/cm2) combined with FA in the range of 800-1100oC for 30 min in nitrogen ambience. The MOS structures have been fabricated by depositing indium-tin-oxide (ITO) and aluminium in the front and rare sides of the samples, respectively, and patterning the ITO layer using photolithography. Interestingly, instead of electrically driven pumping of Er3+ ions by Ge NCs, we found that an EL band ~407 nm associated to the Ge-related oxygen-deficiency centres (GeODCs) have been pumped by Er3+ ions and discuss the observed phenomenon on the ground of an inverse energy transfer process. Concentration and temperature dependent modification of microstructure and the subsequent impact on EL response will also be discussed.

For a comparative study of the energy transfer mechanism during room temperature electroluminescence (EL), two sets of samples have been prepared by implanting either Ge and Er ions (type-I) or Si and Er ions (type-II) into a 200 nm SiO2 layer combined with rapid-thermal-annealing. Three reference samples have been prepared by implanting only Er, Ge or Si ions in SiO2 followed by post-implantation annealing. The formation of Si and Ge nanocrystals (NCs) was confirmed by transmission electron microscopy. The metal-oxide-semiconductor dot structure was prepared by depositing indium-tin-oxide and Al films on the front and rear sides of the structure. Quantum-confinement mediated recombination of carriers in Si-nanocrystals (Si-NCs) as well as the triplet (T1) → singlet (S0) transition in the O3-Si-Si-O3 oxygen deficient centre (ODC) provides the 750 and 475 nm bands, respectively, in the only Si-implanted sample. Conversely, the 525, 550, 660 and 1532 nm emissions corresponding to the deexcitation of the 2H11/2, 4S3/2, 4F9/2 and 4I13/2 states to the ground state 4I15/2 of the Er3+, respectively, were recorded for the Er-doped SiO2 layer. A blue-violet light at ~400 nm, representing the T1→S0 transition in the O3-Si-Ge-O3 ODC, was observed in the Ge-NCs embedded SiO2 layer. Although the intensity of the Er-related visible/infrared EL signals in type-I sample was found disappearing/decreasing with a concomitant enhancement of the 400 nm band, a sharp rise in intensity of the 1532 nm Er EL at the expense of the Si-NC related 750 nm band was evidenced in type-II sample. While the later result confirms the energy transfer mechanism from Si-NCs to the nearest Er3+, the former finding can be explained in terms of the energy transfer from Er3+ to the Ge-related ODC.

Strong decrease in the carrier mobility of the nanometer-thick silicon films imposes a limitation on the application of silicon-on-insulator (SOI) structures in the current silicon planar CMOS technology. The formation of SiGe-heterostructures-on-insulator (HOI) is a way to increase the carrier mobility in the nanometer-scale layers. In this work, we present the results on the interface mediated endotaxial (IME) growth of thin Ge film from the Ge+-ion implanted SiO2 layer of the SOI structure.

Strong decrease in the carrier mobility of the nanometer-thick silicon films imposes a limitation on the application of silicon-on-insulator (SOI) structures in the current silicon planar CMOS technology. The formation of SiGe-heterostructures-on-insulator (SGOI) is a way to increase the hole mobility in the nanometer-scale layers. In this work, we present the results on the interface mediated endotaxial growth of nanometer-thick Ge film from the Ge+-ion implanted SiO2 layer of the SOI structure

We report the first observation of superconductivity in heavily p-type doped Germanium at ambient-pressure conditions. Using Ga as dopant, we have produced a series of GeGax samples by ion-beam implantation and subsequent short-term (msec) flash-lamp annealing. The combination of these techniques allows for Ga concentrations up to 14%, i.e. a doping level which is clearly larger than the solubility limit and not accessible to any other method so far. Transport measurements reveal superconducting transitions with Tc up to 0.39 K. In more detail, we observe a strong dependence of the superconducting critical parameters on the annealing conditions. Further, we find a strong anisotropy of the superconducting critical field re ecting the two-dimensional character of the superconducting state in the thin GeGax layer having an effective depth of only 20 nm. We find critical magnetic in-plane fields even larger than the Pauli-Clogston limit. After its finding in Si and diamond, our work adds another unexpected observation of superconductivity in doped elemental semiconductors.

It is well established that Si nanocrystals (NCs) can act as sensitizers in Er-doped SiO2 during optical pumping [1-4]. In fact, following the recombination of excitons (electron-hole pairs) in optically excited Si NCs transfer their energy to the higher energy levels of the nearest Er3+ ions and subsequently decay to the ground state by intra-4f transitions. Among those, the 4I13/2 → 4I15/2 radiative transition has attracted substantial interest since the respective luminescence at ~ 1.53 m corresponds to the maximum transparency of silica-based optical fibers [2]. Ge is another group-IV element with similar electronic properties to that of Si. We have examined the impact of Ge NCs in Er-doped SiO2 layers by investigating electroluminescence (EL) of the metal-oxide semiconductor (MOS) structures, where the Er-doped Ge-rich SiO2 layers have been prepared by ion implantation technique combined with rapid thermal annealing (RTA). The samples have been prepared by two steps: (i) 130 keV Ge ions have been implanted with a dose of 2  1016 ions/cm2 in a 200 nm thick thermally grown SiO2 layers followed by RTA at 1050 oC for 180 s, and subsequently (ii) 250 keV Er ions have been implanted with a dose of 1  1015 ions/cm2 followed by RTA in the range of 850-1050 oC for 6-150 s in nitrogen ambience. Transmission electron microscopy experiments reveal formation of randomly oriented Ge NCs with average size ~4 nm. The MOS structures have been fabricated by depositing indium-tin-oxide (ITO) and aluminium in the front and rare sides of the samples, respectively, and patterning the ITO layer using photolithography. During EL measurements, in absence of the visible range band correlated to the quantum confinement in Ge NCs a band appears at ~400 nm in Ge-rich SiO2 layer as a consequence of hot electron mediated impact excitation in Ge-related oxygen-deficiency centres (GeODCs) during electrical pumping [5]. We find an increase of the 400 nm EL intensity with a concomitant reduction of the Er-related emission, and discuss the observed phenomenon on the ground of an inverse energy transfer process [4] from excited Er3+ to the GeODCs. [1] A. Polman, J. Appl. Phys. 82, 1 (1997). [2] O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, and H. Heinrich, Phys. Rev. B 76, 195419 (2007). [3] M. Fujii, K. Imakita, K. Watanabe, and S. Hayashi, J. Appl. Phys. 95, 272 (2004). [4] I. Izeddin, A. S. Moskalenko, I. N. Yassievich, M. Fujii, and T. Gregorkiewicz, Phys. Rev. Lett. 97, 207401 (2006). [5] L. Rebohle, J. von Borany, R. A. Yankov, W. Skorupa, I. E. Tyschenko, H. Fröb, and K. Leo, Appl. Phys. Lett. 71, 2809 (1997).

High quality 3C-SiC nanocrystallites were epitaxially formed on a single crystalline Si surface covered by a 150 nm thick SiO2 capping layer after low dose carbon implantation and subsequent high temperature annealing in CO atmosphere. Carbon implantation is used to introduce nucleation sites by forming silicon-carbon clusters at the SiO2/Si interface facilitating the growth of 3C-SiC nanocrystallites.

Optically active Er3+ ions dispersed in a SiO2 layer are often used for amplifying signals at the wavelength of ~1.5 m that coincides with the maximum transparency window of silica-based optical fibers. In order to enhance the 1.5 m Er luminescence, a sufficient number of Er ions must be in the excited state, and it is only possible by employing a high-power pumped laser. Si nanocrystals (NCs) embedded in an Er-doped SiO2 layer show a new avenue to excite Er3+ ions indirectly, where Si-NC behaves like a sensitizer [1]. The basic mechanism of the above mentioned system relies on three facts: (i) optical excitation of Si-NC, (ii) nonradiative transfer of energy from Si-NC to the neighbouring Er3+, and (iii) subsequent relaxation from the first excited state to the ground state of Er3+ by emitting light at 1.5 m. However, to integrate these photonic systems into current microelectronics, it is essential to fabricate metal-oxide-semiconductor based light-emitting devices. Based on electroluminescence (EL) experiments, some groups have shown the importance of Si-NCs in enhancing the 1.5 µm Er luminescence. Here we use an experimental approach for evaluating the influence of Ge NCs on the Er EL in Er-doped SiO2 layers. In particular, we demonstrate an increase in intensity of the 400 nm band, characteristic of the Ge-NC related oxygen-deficiency centres (GeODC), at the expense of the Er-related signals with maxima at 522, 550, 660 and 1532 nm during electrical pumping at room-temperature  indicating an energy transfer process from the excited Er ions to the confined carriers in the GeODC, which is just opposite to the concept commonly used for the Er-doped SiO2 layers containing Si-NCs. Formation of Ge-NCs was verified by transmission electron microscopy. [1] Polman A, Nature Materials 2002;1:10.

Recently, superconductivity has been discovered in heavily boron-doped group IV semiconductors like diamond [1] and silicon [2]. Because theoretical studies predict only a weak tendency to superconductivity in heavy p-type doped Ge [3] investigations of the low-temperature transport behaviour in Ge are still lacking. In order to obtain superconductivity in group IV semiconductors, heavy p-type doping above the metal-insulator-transition and low lattice damage is required. The combination of both conditions make it difficult to apply ion implantation as doping technique. The challenge is to reconstruct the damaged or even amorphized crystal lattice and to activate the acceptor atoms after implantation by annealing, avoiding at the same time long range diffusion and precipitation of the acceptors in the supersaturated semiconductor. So far only in-situ doping during growth (high-temperature-high-pressure synthesis [1] and chemical vapour deposition) for boron-doped diamond and ultra-short-time laser melting of the Si surface in BCl3 atmosphere (gas immersion laser doping [2]) have met these conditions. Here an alternative process compatible with semiconductor technology is presented. Ga implantation and flash lamp annealing in the ms range enables the production of Ga supersaturated (up to 15 at%) crystalline Ge layers which become superconducting below 0.5 K. The layer structure investigated by AES, XTEM, RBS/C and the electrical transport properties at low temperatures are reported. [1] E. A. Ekimov, V. A. Sidorov, E. D. Bauer, et al. , Nature 428 (2004) 542 [2] E. Bustarret, C. Marcenat, P. Achatz, et al., Nature 444 (2006) 465 [3] L. Boeri, J. Kortus, O. K. Anderson, J. Phys. Chem. Solids 67 (2006) 552

The impact of rapid thermal annealing (RTA) in producing samples by sequential implantation of Si and Er ions into a 200 nm SiO2 layer combined with different annealing cycles as well as the corresponding room-temperature visible and infrared photoluminescence (PL) have been studied. The Er-related PL intensity at 1533 nm for the samples prepared by implanting Si with subsequent annealing, followed by Er implantation and final annealing (type-I) was found to be stronger than the one produced similarly but without the first annealing step (type-II). In fact, the 1533 nm peak intensity in the optimized RTA processed sample is comparable to the PL yield of the furnace-annealed sample. Moreover, the excitation wavelength (405 nm) was found to be suitable for exciting the Si=O related point defects in the SiO2 layer, and can provide a PL band with a maximum at ~580 nm. While this band was further intensified in presence of Si nanocrystals (Si NCs), it became weaker by introducing additional Er3+ ions with a concomitant rise of the 1533 nm Er PL, confirming the visible range pumping of Er3+. The detailed spectral analyses suggest that the 580 nm band is the result of the excitation/deexcitation mechanism in molecule like states in Si=O or the Si=O state mediated recombination of carriers in Si NCs according to the model proposed by Wolkin et al. [Phys. Rev. Lett. 82, 197 (1999)]. The samples were further characterized by transmission electron microscopy and Fourier-transform infrared-spectroscopy. The time resolved PL measurements and a modelling by rate equations were also performed to determine and justify the energy migration mechanism from Si NC to the neighbouring Er3+.

The Er-doped SiO2 layers containing Si nanocrystals (Si-ncs) have attracted considerable interest for more than a decade in realizing efficient light sources at 1.54 um [1,2], owing to the coincidence of the luminescence wavelength to the absorption minimum of the silicon based optical fibers. Although about two orders of magnitude Er luminescence has been noticed in presence of Si-ncs in a long time annealed sputtering deposited samples [3], observation of such high efficiency in ion implantation processed samples is scarce. Recently, we have succeeded in producing such a system by a combination of sequential Si and Er implantations and rapid thermal annealing (RTA). The processing conditions have been optimized for achieving maximum Er photoluminescence (PL) at 1533 nm at the expense of a broad luminescence band peaking at ~580 nm. Spectral analyses suggest that the appearance of such visible range PL band can be explained in the light of the interfacial state mediated recombination of carriers in the Si-ncs according to the quantum-confinement model [4]. The energy migration from Si-ncs to the nearby Er ions has further been manifested using time-resolved PL measurements. [1] A. Polman, J. Appl. Phys. 82, 1 (1997). [2] G. Franzò, S. Boninelli, D. Pacifici, F. Priolo, F. Iacona, and C. Bongiorno, Appl. Phys. Lett. 82, 3871 (2003). [3] M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, Appl. Phys. Lett. 71, 1198 (1997). [4] M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and Delerue, Phys. Rev. Lett. 82, 197 (1999).

The Er-doped SiO2 layers containing Si nanocrystals (Si-ncs) have attracted considerable interest for more than a decade in realizing efficient light sources at 1.54 um, owing to the coincidence of the luminescence wavelength to the absorption minimum of the silicon based optical fibres.1 Although about two orders of magnitude Er luminescence has been noticed in long time annealed sputtered deposited samples,2 observation of such high efficiency in ion implantation processed samples is scarce. Recently, we have succeeded in producing such a system by a combination of sequential Si and Er implantations and rapid thermal annealing (RTA). The processing conditions have been optimized for achieving maximum Er photoluminescence (PL) at 1533 nm at the expense of a broad luminescence band peaking at ~580 nm. Spectral analyses suggest that the appearance of such visible range PL band can be explained in the light of the interfacial state mediated recombination of carriers in the Si-ncs according to the model proposed by Wolkin et al.3. The energy migration from Si-ncs to the nearby Er ions has further been manifested using time-resolved PL measurements. [1] A. Polman, J. Appl. Phys. 82, 1 (1997). [2] M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, Appl. Phys. Lett. 71, 1198 (1997). [3] M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and Delerue, Phys. Rev. Lett. 82, 197 (1999).

Bonding interface of SOI structure may be an effective sink for impurity atoms because of higher concentration of vacancies and microvoids on the cleavage planes. The behaviour of ion-implanted Sb and In atoms near the bonding interface of SOI structures was investigated as a function of annealing temperature.

The behaviour of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon-on-insulator (SOI) structures has been studied. The enhanced segregation of the implanted Ge atoms at the Si/SiO2 bonding interface has been observed. Segregated Ge atoms form the layer, which is coherent with the silicon lattice. It is suggested that the formation of intermediate Ge layer is mediated by the occurrence of liquid Ge phase. The effect of Ge on the Hall mobility of holes in the 25 nm thick SOI layer was studied. An increase in the hole mobility by a factor of three was obtained in the SiGe-on insulator structures in comparison with that measured in the respective Ge-free SOI films.

Using bulk silicon may be limited for 22 nm technological node due to silicon mobility limitation. New type of substrates needs for further scaling in CMOS microelectronics. We speculate that this new type of materials can be semiconductor heterostructure on insulator (HOI) compatible with current silicon planar CMOS technology. In this work an effect of interface mediated endotaxial (IME) growth of thin InSb film at Si/SiO2 bonded interface was experimentally observed and investigated for the first time. Joint semiconductor material stack obtained by hydrogen transfer of one layer material (silicon) and endotaxially grown second one (indium antimonide) placed initially into amorphous silicon dioxide film is presented. Thermodynamic, kinetic and lattice mismatch parameter influences on IME process are considered.

Flash-lamp annealing (FLA) oil a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural Model to compute stresses and deflections The paper shows how these models can be used to explore process conditions in flash lamp annealing; with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.

New types of substrates are needed for further scaling in CMOS microelectronics after 22 nm node. We speculate that this new type of materials can be semiconductor heterostructures on insulator (HOI) compatible with current silicon planar CMOS technology. In this work the effect of interface mediated endotaxial (IME) growth of thin Ge or InSb film at the Si/SiO2 bonded interface was experimentally observed and investigated. A joint semiconductor material stack obtained by hydrogen transfer of one layer material (silicon) and an endotaxially grown second one (germanium or indium antimonide) placed initially into an amorphous silicon dioxide film is presented. Thermodynamic, kinetic and lattice mismatch parameter influences on the IME process are considered.

Es soll der Vertikalaufbau der mittels der Lichtimpulsbestrahlung zu schmelzenden Oberflächenschichten so modifiziert werden, dass eine weitgehend ebene und nicht facetierte Schmelzfront erreicht wird.

issledovanui svoistva germanii, implantirovannovo v sloi SiO2 The properties of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon-on-insulator structures are studied. It is shown that, under conditions of high-temperature (1100 °C) annealing, germanium nanocrystals are not formed, while the implanted Ge atoms segregate at the Si/SiO2 bonding interface. It is established that, in this case, Ge atoms are found at sites that are coherent with the lattice of the top silicon layer. In this situation, the main type of traps is the positive-charge traps; their effect is interpreted in the context of an increase in the surface-state density due to the formation of weaker Ge–O bonds. It is found that the slope of the drain–gate characteristics of the back MIS transistors increases; this increase is attributed to an increased mobility of holes due to the contribution of an intermediate germanium layer formed at the Si/SiO2 interface.

Endotoxial growth of InSb nanocrystals

4H silicon carbide (Si1-xC1-y)Gex+y solid solutions with an average Ge incorporation on lattice sites ranging from 0.7 to 2.5 percent were formed by ion beam synthesis. RBS and RBS/C investigations revealed a decreasing Ge lattice incorporation with increasing implantation dose above 10%. The carried out rapid thermal annealing at 1300 °C reduces the residual damage, increases the lattice site occupation and led to negligible change in the concentration profiles.

Strong decrease in the carrier mobility of the nanometer-thick silicon films imposes a limitation on the application of Silicon-On-Insulator SOI structures in the current planar CMOS technology. The formation of heterostructures-on-insulator is a way to increase the carrier mobility in the nanometer-scale layers. We have already shown that formation of Ge/Si on SiO2 heterostructure leads to increasing of holes mobility [1]. It is known that electron mobility in bulk InSb is about 77000 cmy2/Vs. This is about 50 times more than that in bulk silicon. The formation of Si/InSb on insulator heterostructures may provide an increase of effective electron mobility in the nanometer scale SOI films. The main goal of this work was a study of nucleation and growth of monocrystalline indium antimonide thin film at the Si/SiO2 grain boundary.