1,145 results on '"Tarasov, I."'
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102. Giant reversible deformations in a shape-memory composite material
103. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD
104. The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures
105. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide
106. Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers
107. High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures
108. Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions
109. Modeling of cyclic elastoplastic deformation of metals under arbitrary loading trajectories
110. Study of optical characteristics of structures with strongly strained In x Ga1 − x As quantum wells
111. Quenching of lasing in high power semiconductor laser
112. A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD
113. Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga x In1 − x P/GaAs(100) heterostructures
114. Dielectric waveguide for middle and far infrared radiation
115. GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm
116. High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement
117. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures
118. Hot charge-carrier electroluminescence from laser nanostructures in the spontaneous and stimulated emission modes and absorption of IR radiation by hot electrons in quantum wells
119. Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/GaxIn1 − xAsyP1 − y/GaInP/GaAs(001) heterostructures
120. High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures
121. Properties of barrier contacts with nanosize TiB x layers to InP
122. Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions
123. High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide
124. Scaled nano-and microrelief of ordering regions in Al x Ga1 − x As/GaAs(100) epitaxial heterostructures
125. Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m)
126. Double-band generation in quantum-well semiconductor laser at high injection levels
127. Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation
128. 1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures
129. Controlling the radiation spectrum of quantum-well heterostructure lasers by ultrasonic strain
130. Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures
131. Documentary Films Production and Demonstration on Federal and Regional Television
132. Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers
133. Studying the characteristics of pulse-pumped semiconductor 1060-nm lasers based on asymmetric heterostructures with ultrathick waveguides
134. Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz
135. High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure
136. High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures
137. Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1−x As/GaAs(100) heterostructures with the ordered AlGaAs2 phase
138. Производство и демонстрация документального кино на федеральном и региональном телевидении
139. Photoluminescence of heterostructures with highly strained Ga0.76In0.24As quantum wells separated by GaAsyP1−y compensating barriers
140. Temperature dependence of the threshold current of QW lasers
141. Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures
142. High-power laser diodes based on asymmetric separate-confinement heterostructures
143. HOW TO DISTINGUISH HIGH-QUALITY DOCUMENTARY FROM A FORMULAIC SURROGATE FILM: AN EXPERIENCE OF STRUCTURAL AND FUNCTIONAL ANALYSIS
144. Two-state operation of high-power semiconductor lasers with a thick quantum well.
145. Effect of the spatial current dynamics on radiative characteristics of high-power lasers-thyristors based on AlGaAs/GaAs heterostructures.
146. Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures
147. Internal optical loss in semiconductor lasers
148. Modern approaches to surgical and minimally invasive treatment of patients with benign prostate hyperplasia
149. Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well
150. MOCVD GaInAsP/GaInP/AlGaInP laser structures emitting at 780 nm
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