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The classification scheme of electronic phases uses two prominent paradigms: correlations and topology. Electron correlations give rise to superconductivity and charge density waves, while the quantum geometric Berry phase gives rise to electronic topology. The intersection of these two paradigms has initiated an effort to discover electronic instabilities at or near the Fermi level of topological materials. Here we identify the electronic topology of chiral fermions as the driving mechanism for creating van Hove singularities that host electronic instabilities in the surface band structure. We observe that the chiral fermion conductors RhSi and CoSi possess two types of helicoid arc van Hove singularities that we call type I and type II. In RhSi, the type I variety drives a switching of the connectivity of the helicoid arcs at different energies. In CoSi, we measure a type II intra-helicoid arc van Hove singularity near the Fermi level. Chemical engineering methods are able to tune the energy of these singularities. Finally, electronic susceptibility calculations allow us to visualize the dominant Fermi surface nesting vectors of the helicoid arc singularities, consistent with recent observations of surface charge density wave ordering in CoSi. This suggests a connection between helicoid arc singularities and surface charge density waves.Strong correlations between electrons in topological surface states drive the formation of surface van Hove singularities. These may be linked to charge density waves in the surface states.

The rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about 2 orders of magnitude has been demonstrated at the spinel-perovskite γ-Al2O3/SrTiO3 interface compared to the paradigm perovskite-perovskite LaAlO3/SrTiO3 interface. We explore the fundamental physics behind this phenomenon from direct measurements of the momentum-resolved electronic structure of this interface using resonant soft-X-ray angle-resolved photoemission. We find an anomaly in orbital ordering of the mobile electrons in γ-Al2O3/SrTiO3 which depopulates electron states in the top SrTiO3 layer. This rearrangement of the mobile electron system pushes the electron density away from the interface, which reduces its overlap with the interfacial defects and weakens the electron-phonon interaction, both effects contributing to the mobility boost. A crystal-field analysis shows that the band order alters owing to the symmetry breaking between the spinel γ-Al2O3 and perovskite SrTiO3. Band-order engineering, exploiting the fundamental symmetry properties, emerges as another route to boost the performance of oxide devices.

The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.

Resonant inelastic x-ray scattering (RIXS) spectra excited at the oxygen K edge of CO2 are presented and discussed. Although excitation from a gerade initial state to the intermediate 1s-1π* state breaks the inversion symmetry due to strong vibronic coupling, RIXS excited at the corresponding resonance exclusively populates gerade vibrations in the gerade electronic ground state. This observation constitutes an experimental confirmation of the prediction that the parity selection rule applies in RIXS on an inversion-symmetric polyatomic system, provided that the total electronic-vibronic wave function is considered. Parity selectivity is used for assigning spectra to the population of electronically excited final states, a procedure hampered only when symmetry-breaking vibronic coupling in the final states is prominent. A RIXS spectrum excited in the Rydberg region is tentatively assigned using a simplified quasi-two-step model in which it is assumed that the electron in the Rydberg orbital excited in the first step remains as a spectator during the second decay step.

Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.

Magnetic Weyl semimetals are a newly discovered class of topological materials that may serve as a platform for exotic phenomena, such as axion insulators or the quantum anomalous Hall effect. Here, we use angle-resolved photoelectron spectroscopy and ab initio calculations to discover Weyl cones in CoS2, a ferromagnet with pyrite structure that has been long studied as a candidate for half-metallicity, which makes it an attractive material for spintronic devices. We directly observe the topological Fermi arc surface states that link the Weyl nodes, which will influence the performance of CoS2 as a spin injector by modifying its spin polarization at interfaces. In addition, we directly observe a minority-spin bulk electron pocket in the corner of the Brillouin zone, which proves that CoS2 cannot be a true half-metal.

Angle-resolved photoemission spectroscopy, visualizing the superconducting gap in k-space, plays a pivotal role in research on cuprates and other high-Tc superconducting materials. However, there has always been an imminent doubt whether this technique truly represents the intrinsic bulk spectral function, whose response can be distorted by energy- and k-dependence of the photoexcitation matrix element, and by a small photoelectron escape depth of few surface atomic layers. Here, we address this fundamental question with soft-X-ray photoemission measurements of the superconducting gap in the paradigm high-Tc cuprate Bi2Sr2CaCu2O8. We vary the matrix element by spanning a dense k-space grid, formed by the lattice superstructure, and the probing depth by changing the emission angle. The measured gap appears independent of the matrix element effects, probing depth or photoexcitation energy. This fact proves the relevance of photoemission studies for the bulk superconductivity in Bi2Sr2CaCu2O8, and calls for similar verification experiments on other high-Tc compounds, in particular more three-dimensional ones. Bi2Sr2CaCu2O8 shows an anomalously fast decay of the coherent spectral weight with photon energy, tracing back to strong electron–phonon interaction or relaxation of the lattice coherence.