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101. On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

102. Dislocations introduced in n-GaN at room temperature cause conductivity inversion

103. Temperature dependent performance of ITO Schottky contacts on β-Ga2O3

104. GaN and Related Materials

105. OH-Si complex in hydrogenated n-typeβ-Ga2O3:Si

106. Magneto-optical properties of Cr3+ in β-Ga2O3

107. Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3

108. Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells

109. Heteroepitaxial Growth of Ga2O3 Thin Films of Various Phase Composition by Oxidation of Ga in Hydrogen-Oxygen Plasmas

110. Effects of Downstream Plasma Exposure on β-Ga2O3 Rectifiers

111. Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors

112. Band offsets in ITO/Ga2O3 heterostructures

113. (Keynote) Advances in Ga2O3Processing and Devices

114. Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing

115. Band alignment of Al2O3 with (−201) β-Ga2O3

116. High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

117. Valence and conduction band offsets in AZO/Ga2O3 heterostructures

118. Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer

119. Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

120. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts

121. Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture

122. Extraction of Migration Energies and Role of Implant Damage on Thermal Stability of Deuterium in Ga2O3

123. Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing

124. Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes

125. Hydrogen Sensing Characteristics of Pt Schottky Diodes on () and (010) Ga2O3Single Crystals

126. Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers

128. Transition Metal Doped ZnO

129. DC and dynamic switching characteristics of field-plated vertical geometry [beta]-Ga2O3 rectifiers

130. Dry etching of Ga2O3

131. Hydrogen in Ga2O3

132. Radiation damage in Ga2O3

133. Band alignments of dielectrics on (− 201) β-Ga2O3

134. Experimental estimation of electron–hole pair creation energy in β-Ga2O3

135. Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates

137. Parasitic p–n junctions formed at V-pit defects in p-GaN

138. Wide Bandgap Semiconductor-Based Electronics

140. Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers

141. Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

142. Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

143. (Invited) Simulation of the Effects of As-Grown Defects on GaN-Based Power HEMTs

144. Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN

145. Band alignment in ZrSiO4/ZnO heterojunctions

146. Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC

147. Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

148. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

149. Effect of Electron Injection on Minority Carrier Transport Properties in Unintentionally Doped GaN

150. Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire

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