321 results on '"Simmons, Michelle Y."'
Search Results
102. Disentangling phonon and impurity interactions in δ-doped Si(001)
103. Spin blockade and exchange in Coulomb-confined silicon double quantum dots
104. Transport in Asymmetrically Coupled Donor-Based Silicon Triple Quantum Dots
105. Valley Splitting in a Silicon Quantum Device Platform
106. Silicon quantum electronics
107. Real metals, 2D or not 2D?
108. A Single-Atom Transistor
109. Quantum Transport in Ultra-Scaled Phosphorous-Doped Silicon Nanowires
110. A tight-binding study of channel modulation in atomic-scale Si:P nanowires
111. Silicon quantum electronics
112. Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas
113. New avenues to an old material: controlled nanoscale doping of germanium
114. Atomistic modeling of metallic nanowires in silicon
115. Electronic spectrum of a deterministic single-donor device in silicon
116. Origin of noise in two dimensionally doped silicon and germanium
117. Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon
118. Engineering Independent Electrostatic Control of Atomic-Scale (∼4 nm) Silicon Double Quantum Dots
119. Full-band study of ultra-thin Si:P nanowires
120. Effective mass theory of monolayerδdoping in the high-density limit
121. A single-atom transistor
122. In SituPatterning of Ultrasharp Dopant Profiles in Silicon
123. Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers
124. Charge Sensing of Precisely Positioned P Donors in Si
125. Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:Pδlayers
126. Optimizing dopant activation in Si:P double δ-layers
127. Spectroscopy of few-electron single-crystal silicon quantum dots
128. Investigating the surface quality and confinement of Si:P at different growth temperatures
129. Probing dopants at the atomic level
130. One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy
131. Atomically precise silicon device fabrication
132. Structural Integrity and Transport Characteristics of STM-Defined, Highly-Doped Si:P Nanodots
133. Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds
134. Realization of Atomically Controlled Dopant Devices in Silicon
135. Electrical Characterization of Ordered Si:P Dopant Arrays
136. Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy–patterned devices
137. A Tight-Binding Study of Single-Atom Transistors.
138. Observation of substitutional and interstitial phosphorus on cleanSi(100)−(2×1)with scanning tunneling microscopy
139. The fabrication of devices in silicon using scanning probe microscopy
140. STM characterization of phosphine adsorption on STM-patterned H:Si(001)surfaces
141. Towards the Routine Fabrication of P in Si Nanostructures: Understanding P Precursor Molecules on Si(001)
142. Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy
143. Challenges in Surface Science for a P-in-Si Quantum Computer — Phosphine Adsorption/Incorporation and Epitaxial Si Encapsulation
144. STM characterization of phosphine adsorption on STM-patterned H:Si(001)surfaces.
145. Towards the Routine Fabrication of P in Si Nanostructures: Understanding P Precursor Molecules on Si(001).
146. Coulomb Charging Effects in an Open Quantum Dot Device at Zero Magnetic Field
147. Transport in Asymmetrically Coupled Donor-Based SiliconTriple Quantum Dots.
148. Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas.
149. Engineering IndependentElectrostatic Control of Atomic-Scale (â¼4 nm) Silicon Double QuantumDots.
150. Spin–orbit coupling in silicon for electrons bound to donors.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.