362 results on '"Saddow, Stephen E."'
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102. Heteroepitaxial growth of diamond films on 3C-SiC/Si substrates with utilization of antenna-edge microwave plasma CVD for nucleation
103. 3C-SiC on Si: A Biocompatible Material for Advanced Bioelectronic Devices
104. Organic Functionalization of 3C-SiC Surfaces
105. Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001)
106. Atomic Structure of Non-Basal-Plane SiC Surfaces : Hydrogen Etching and Surface Phase Transformations
107. Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
108. Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
109. Silicon Carbide Waveguides for Optogenetic Neural Stimulation
110. N-bit optically controlled microwave signal attenuator using the photoconductive effect
111. (Invited) High Quality 3C-SiC for MOS Applications
112. Single-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications
113. Cellular Interactions on Epitaxial Graphene on SiC (0001) Substrates
114. Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application
115. Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
116. Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
117. Demonstration of 3C-SiC MEMS Structures on Polysilicon-on-oxide Substrates
118. Single-crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications
119. Symposium K: Silicon Carbide - Materials, Processing, and Devices
120. Test Methods to Identify COUNTERFEIT MLCCS: Electrical and physical characteristics play a role in highaccuracy detection.
121. A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations
122. High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)
123. 3C-SiC Films on Si for MEMS Applications: Mechanical Properties
124. Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films
125. Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging
126. Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer
127. 3C-SiC Hetero-Epitaxial Films for Sensors Fabrication
128. Growth of 3C-SiC on Si: Influence of Process Pressure
129. Residual Stress in CVD-grown 3C-SiC Films on Si Substrates
130. Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging
131. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC
132. CVD of 6H-SiC on Non-Basal Quasi Polar Faces
133. Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
134. Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
135. Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive
136. Mechanical Properties of 3C-SiC Films for MEMS Applications
137. SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
138. CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
139. High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
140. Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
141. Growth of 3C-SiC on Si Molds for MEMS Applications
142. Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor
143. Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations
144. Thermal detection mechanism of SiC-Based Resistive Gas Sensors
145. Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001)
146. Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC
147. Investigating the surface changes of silicon in vitro within physiological environments for neurological application.
148. Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
149. J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C
150. Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
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