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Aluminum (Al) is the most abundant metal in the Earth’s crust and is not an essential element for plant growth. In contrast, nitrogen (N) is the most important mineral element for plant growth, but this non-metal is often present at low levels in soils, and plants are often N deficient. Aluminum toxicity is dominant in acid soils, and so plants growing in acid soils have to overcome both Al toxicity and N limitation. Because of low N-use efficiency, large amounts of N fertilizers are applied to crop fields to achieve high yields, leading to soil acidification and potential Al toxicity. Aluminum lowers plant N uptake and N-use efficiency because Al inhibits root growth. Although numerous studies have investigated the interactions between Al and N, a complete review of these studies was lacking. This review describes: (1) the link between plant Al tolerance and ammonium/nitrate (NH4+/NO3-) preference; (2) the effects of NH4+/NO3- and pH on Al toxicity; (3) the effects of Al on soil N transformations; and (4) the effects of Al on NH4+/NO3- uptake and assimilation by plants. Acid soils are characterized chemically by a relatively high ratio of NH4+ to NO3- and high concentrations of toxic Al. Aluminum-tolerant plants generally prefer NH4+ as an N source, while Al-sensitive plants prefer NO3-. Compared with NO3-, NH4+ increases the solubilization of toxic Al into soil solutions, but NH4+ generally alleviates Al phytotoxicity under solution culture because the protons from NH4+ compete with Al3+ for adsorption sites on the root surface. Plant NO3- uptake and nitrate reductase activity are both inhibited by Al, while plant NH4+ uptake is inhibited to a smaller degree than NO3-. Together, the results of numerous studies indicate that there is a synergistic interaction between plant Al tolerance and NH4+ nutrition. This has important implications for the adaptation of plants to acid soils that are dominated chemically by toxic Al as well as NH4+. Finally, we discuss how this knowledge can be used to increase plant Al tolerance and N-use efficiency in acid soils.

In this Letter, the trap inhomogeneity within β-Ga2O3 is correlated with the conversion of Shockley–Read–Hall (SRH) recombination in NiO/β-Ga2O3 p+–n heterojunction diodes. For the virgin epi-wafer, both near-surface traps E2 (EC-0.82 eV) and E3 (EC-1.11 eV) and bulk E2* traps (EC-0.76 eV) are identified by a transient capacitance analysis, and the corresponding forward current–voltage characteristics of diodes are well fitted in the framework of field-dependent SRH recombination. The SRH recombination rates for E2, E3, and E2* traps are determined to be 1.3 × 107, 8.6 × 108, and 2.4 × 108 s−1, respectively. In this circumstance, carrier transport under forward bias is governed by trap-assisted tunneling through E3 traps with high recombination rates, and the hysteresis is pronounced. With the removal of the defective surface layer, E2 and E3 traps are almost completely eliminated, together with the reduced density of E2* traps to 5.6 × 1014 cm−3. The resultant diode performs an improved rectification ratio of >1011 at ±3 V and an enhanced reverse breakdown voltage of 1692 V. The elimination of near-surface traps leads to the conversion of carrier transport into the conventional SRH recombination, accompanied by the negligible forward hysteresis characteristics. The established fundamental correlation of carrier transport and traps within Ga2O3 is beneficial to develop a high-performance power rectifier toward practical applications. [ABSTRACT FROM AUTHOR]

Fuqiang Ren,1,2,* Mingyu Fan,1,2,* Jiandong Mei,1,2 Yongqiang Wu,3 Chengwu Liu,1,2 Qiang Pu,1,2 Zongbing You,4–9 Lunxu Liu1,2 1Department of Thoracic Surgery, West China Hospital, 2Western China Collaborative Innovation Center for Early Diagnosis and Multidisciplinary Therapy of Lung Cancer, 3Regenerative Medicine Research Center, West China Hospital, Sichuan University, Chengdu, People’s Republic of China; 4Department of Structural and Cellular Biology, 5Department of Orthopaedic Surgery, 6Tulane Cancer Center, 7Louisiana Cancer Research Consortium, 8Tulane Center for Stem Cell Research and Regenerative Medicine, 9Tulane Center for Aging, Tulane University Health Sciences Center, New Orleans, LA, USA *These two authors contributed equally to this study Abstract: Tumor-associated macrophages play an important role in tumor growth and progression. These macrophages are heterogeneous with diverse functions, eg, M1 macrophages inhibit tumor growth, whereas M2 macrophages promote tumor growth. In this study, we found that IFNγ and/or celecoxib (cyclooxygenase-2 inhibitor) treatment consistently inhibited tumor growth in a mouse lung cancer model. IFNγ alone and celecoxib alone increased the percentage of M1 macrophages but decreased the percentage of M2 macrophages in the tumors, and thus the M2/M1 macrophage ratio was reduced to 1.1 and 1.7 by IFNγ alone and celecoxib alone, respectively, compared to the M2/M1 macrophage ratio of 4.4 in the control group. A combination of IFNγ and celecoxib treatment reduced the M2/M1 macrophage ratio to 0.8. Furthermore, IFNγ and/or celecoxib treatment decreased expression of matrix metalloproteinase (MMP)-2, MMP-9, and VEGF, as well as the density of microvessels in the tumors, compared to the control group. This study provides the proof of principle that IFNγ and/or celecoxib treatment may inhibit lung-tumor growth through modulating the M2/M1 macrophage ratio in the tumor microenvironment, suggesting that IFNγ and celecoxib have potential to be further optimized into a new anticancer therapy. Keywords: tumor-associated macrophages, M1 macrophages, M2 macrophages, lung cancer, interferon-γ, celecoxib

Persistent photocapacitance (PPC) was observed in β-(Al0.14Ga0.84)2O3/n+Ga2O3 heterojunctions at low temperatures. The effect is seen in capacitance-frequency measurements under illumination and in admittance spectra after illumination. In the latter case, the capacitance versus frequency curve after illumination returned to its dark values only at temperatures between 225 and 275 K. Prominent hole-trap-like peaks in optical deep level transient spectroscopy (ODLTS) near 130 K were attributed to quenching with temperature of the PPC effect. The phenomena were assigned to electrons being excited from deep traps in the (Al0.14Ga0.86)2O3 barrier into the two-dimensional electron gas (2DEG) in the Ga2O3 substrate. The reverse process then involves excitation of non-equilibrium electrons in the 2DEG back into the ternary barrier layer and subsequent re-capture by the host deep traps. The effective barrier height for this recovery process was ∼0.2 eV, as estimated from ODLTS measurements. The spectral dependence of the effect suggests the presence of deep traps with optical ionization thresholds near 1 eV and ∼2.3 eV. The shift of the threshold voltage necessary to deplete the 2DEG as a function of the photon energy during illumination at room temperature indicates that the most prominent centers in the barrier have an optical ionization energy near 2.3 eV and a sheet density of ∼1012 cm−2. In microcathodoluminescence (MCL) spectra of the heterojunction, a blue shift by 0.2 eV of the MCL band near 3.1 eV dominant in the substrate and the emergence of a weak MCL peak near 4.8 eV were observed. Electron beam induced current measurements point to the presence of small local areas where the 2DEG formation is handicapped due to Al composition variations or to defects. [ABSTRACT FROM AUTHOR]

A mono-layer of ZnO nanoparticles (NPs), each of which does not mostly overlap with one another, was formed on the surface of a silica glass by implantation with 60 keV Zn+ ions and subsequent thermal oxidation. Then, the sample was irradiated with swift heavy ions (SHIs) of 200 MeV Xe14+ ions in the fluence range of 1 × 1011–5 × 1013 ions/cm2. The X-ray diffraction intensity of the {002} peak from ZnO NPs shows a steep drop to 67% of the unirradiated value at the fluence of 1 × 1012 ions/cm2 but maintains almost the same value up to 50 times higher fluence of 5 × 1013 ions/cm2. The behavior could be ascribed to high susceptibility of this material ZnO for recrystallization in the cooling stage of the thermal spike: While damage remains at the central region of SHI impact, recrystallization is induced in large surrounding regions. The interplay between the damage generation in the core regions and the recovery in the surrounding regions reaches a dynamical equilibrium at the fluence exceeding 1 × 1012 ions/cm2. While it is known that free excitons are sensitive to defect registration, the free exciton photoluminescence (PL) with 20% of the unirradiated intensity still survives up to the highest fluence 5 × 1013 ions/cm2. The stable tolerance of this material in optical absorption and PL against SHI irradiation could be attractive for applications. [ABSTRACT FROM AUTHOR]