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1,314 results on '"Priolo F."'

105. Al-O interactions in ion-implanted crystalline silicon

Author

Galvagno, G., Ferla, A. La, Spinella, C., Priolo, F., Raineri, V., Torrisi, Lucio, Carnera, A., Gasparotto, A., and Rimini, E.

Subjects
Semiconductor chips -- Research, Ion implantation -- Analysis, Physics
Abstract

Study of oxygen interaction with Al, Si or P ion implantation-induced defects in Czochralski silicon wafers reveals that oxygen precipitation in Al implanted samples is more than that in Si or P implanted samples and is consistent with maximum accumulation of nuclear energy. Al atom gettering by the silicon dioxide precipitates occurs on the silicon wafers. A growth and nucleation model for SiO2 precipitates and Al segregation is proposed.

Published
1994

106. Electrical and optical characterization of Er-implanted Si: the role of impurities and defects

Author

Priolo, F., Coffa, S., Franzo, G., Spinela, C., Carnera, A., and Bellani, V.

Subjects
Erbium -- Research, Silicon -- Research, Crystals -- Research, Physics
Abstract

Determination of electrical and optical properties of Er-implanted Si shows that electrical activation can be increased by doping Si with oxygen or carbon. Presence of oxygen precipitates distorts the process of luminescence in the oxygen doped samples. Carbon doped samples reveal an enhancement in photoluminescence intensity. Residual defects are low in carbon-doped samples. Oxygen doped and carbon doped Si show variations of intensity ratio of the main photoluminescence peak.

Published
1993

107. Three-dimensional concentration profiles of hybrid diffusers in crystalline silicon

Author

Coffa, S., Privitera, V., Frisina, F., and Priolo, F.

Subjects
Ion implantation -- Research, Semiconductors -- Research, Silicon -- Research, Physics
Abstract

The three-dimensional concentration profiles of ion-implanted Au, Pt and Zn in crystalline silicon were investigated. The results showed that the lateral spread under the mask was bigger than the vertical diffusion, especially on the side opposite to the implanted diffusion source. The features of the measured profiles were brought about by the kick-out mechanism of diffusion for the transition metals.

Published
1993

109. Kinetic and structural study of the epitaxial realignment of polycrystallineSi films

Author

Benyaich, F., Priolo, F., Rimini, E., Spinella, C., and Ward, P.

Subjects
Polycrystalline semiconductors -- Research, Silicon crystals -- Research, Epitaxy -- Research, Physics
Abstract

Epitaxial realignment of polycrystalline Si films was analyzed in terms of structural and kinetic characteristics. The results showed that the realignment mode and the kinetic activity of the process was connected to the microcrystalline structure of the layers, to the morphology of the film and to the presence of As atoms. In addition, the kinetics of the realignment modes were observed to be thermally activated.

Published
1992

117. Ion implantation induced damage in relaxed Si0.75Ge0.25

Author

Priolo, F., primary, Spinella, C., additional, Albertazzi, E., additional, Bianconi, M., additional, Lulli, G., additional, Nipoti, R., additional, Lindner, J.K.N., additional, Mesli, A., additional, Barklie, R.C., additional, Sealy, L., additional, Holm, B., additional, and Larsen, A. Nylandsted, additional

Published
1996
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135. N-type doping of Ge by As implantation and excimer laser annealing.

Author

Milazzo, R., Napolitani, E., Impellizzeri, G., Fisicaro, G., Boninelli, S., Cuscuna, M., De Salvador, D., Mastromatteo, M., Italia, M., Magna, A. La, Fortunato, G., Priolo, F., Privitera, V., and Carnera, A.

Subjects
GERMANIUM, ARSENIC, DIFFUSION, SOLUBILITY, EXCIMER laser research, ENERGY density
Abstract

The diffusion and activation of arsenic implanted into germanium at 40 keV with maximum concentrations below and above the solid solubility (8 x 1019 cm-3been studied, both experimentally and theoretically, after excimer laser annealing (λ = 308 nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1 x 1020 cm-3, which represents a new record for the As-doped Ge system. [ABSTRACT FROM AUTHOR]

Published
2014
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137. Light absorption and electrical transport in Si:O alloys for photovoltaics

Author

Simone, F.; Priolo, F., Di Martino, G., Crupi, I., Gibilisco, S., Miritello, M., Lo Savio, R., Di Stefano, M.A., Di Marco, S., Simone, F., and Priolo, F.

Subjects
Silicon compounds -- Electric properties, Magnetrons -- Analysis, Oxides -- Electric properties, Chemical vapor deposition -- Usage, Physics
Abstract

A combination of the magnetron sputtering and plasma enhanced chemical vapor deposition techniques is employed for the characterization of the different Si:O alloys. The various parameters that are employed for determining the light absorption and the electrical transport properties of these alloys are also discussed.

Published
2010

139. Continuous glucose monitoring (CGM) in very low birth weight newborns needing parenteral nutrition: Validation and glycemic percentiles

Author

Perri, A., Giordano, L., Corsello, M., Priolo, F., Vento, Giovanni, Zecca, Enrico, Tiberi, Eloisa, Vento G. (ORCID:0000-0002-8132-5127), Zecca E. (ORCID:0000-0001-6025-1010), Tiberi E., Perri, A., Giordano, L., Corsello, M., Priolo, F., Vento, Giovanni, Zecca, Enrico, Tiberi, Eloisa, Vento G. (ORCID:0000-0002-8132-5127), Zecca E. (ORCID:0000-0001-6025-1010), and Tiberi E.

Abstract

Background: Continuous glucose monitoring using subcutaneous sensors is useful in the management of glucose control in neonatal intensive care. We evaluated feasibility and reliability of a continuous glucose monitoring system in a population of very low birth weight neonates needing parenteral nutrition. Moreover, we presented percentiles of glycemia of the studied population. Methods: Very low birth weight neonates were enrolled within 24 h from birth. An ENLITE sensor connected to a continuous glucose monitoring system was inserted and maintained for at least 72 h. Data obtained with the continuous glucose monitoring system and with a glucometer were compared. Calibration was performed every 12 h. Results: Twenty-three patients (9 males) were included. Median gestational age was 28 weeks (range 23-30) and median birth weight was 860 g (range 500-1092). A total of 299 paired glucose values were obtained. Modified Clarke Error Grid criteria for clinical significance were met. 74 and 33 episodes of hypoglycemia and hyperglycemia were detected, respectively. 31,329 values of glycemia were analyzed and the percentiles calculated. Conclusions: This continuous glucose monitoring system is safe and accurate. It allows increasing the detection of hypo- and hyper-glycaemia episodes and it could be routinely used in the management of glucose infusion in very low birth weight neonates under total parenteral nutrition.

Published
2018

148. B-doping in Ge by excimer laser annealing.

Author

Impellizzeri, G., Napolitani, E., Boninelli, S., Fisicaro, G., Cuscunà, M., Milazzo, R., Magna, A. La, Fortunato, G., Priolo, F., and Privitera, V.

Subjects
EXCIMER laser research, OPTICAL properties of germanium, ANNEALING of crystals, SEMICONDUCTOR doping, DIFFUSION
Abstract

An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribution and electrical activation in Ge is reported. We performed detailed structural, chemical, and electrical characterizations of Ge samples implanted with B (20 keV, 1 × 1015, or 1 × 1016 B/cm2) and processed by ELA (λ = 308 nm) with multiple pulses (1, 3, or 10). We also developed a diffusion model, in order to simulate the B redistribution induced by the ELA process. We found an anomalous impurity redistribution in the molten phase, which causes a dopant incorporation during the melt-growth at the maximum melt depth. The investigated samples showed a partial electrical activation of the B dopant. The inactivation of B in the samples implanted with 1 × 1015 B/cm2 was correlated to an oxygen contamination, while the poor electrical activation of B in the samples implanted with 1 × 1016 B/cm2 was related to the precipitation of the dopant, in good agreement with the experimental and theoretical results. [ABSTRACT FROM AUTHOR]

Published
2013
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