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The effects of hole injection in amorphous-IGZO is analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high self-trapping energies (from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides and remain localized close to the hole injection source due to the presence of a large diffusion energy barrier (of at least 0.6eV). Their diffusion mechanism can be mediated by the presence of hydrogen. The capture of these holes is correlated with the low off-current observed for a-IGZO transistors, as well as, with the difficulty to obtain a p-type conductivity. The results further support the formation of peroxides as being the root cause of Negative bias illumination stress (NBIS). The strong self-trapping substantially reduces the injection of holes from the contact and limits the creation of peroxides from a direct hole injection. In presence of light, the concentration of holes substantially rises and mediates the creation of peroxides, responsible for NBIS., Comment: 8 pages, 8 figures, to be published in Journal of Applied Physics

We present a novel, continuous-feed nanocasting procedure for the synthesis of bismuth nanowire structures embedded in the pores of a mesoporous silica template. The immobilization of a bismuth salt inside the silica template from a diluted metal salt solution yields a sufficiently high loading to obtain electrically conducting bulk nanowire composite samples after reduction and sintering the nanocomposite powders. Electrical resistivity measurements of sintered bismuth nanowires embedded in the silica template reveal size-quantization effects.

Temperature-dependent spin-Seebeck effect data on Pt|YIG (Y$_3$Fe$_5$O$_{12}$)|GGG (Gd$_3$Ga$_5$O$_{12}$) are reported for YIG films of various thicknesses. The effect is reported as a spin-Seebeck resistivity (SSR), the inverse spin-Hall field divided by the heat flux, to circumvent uncertainties about temperature gradients inside the films. The SSR is a non-monotonic function of YIG thickness. A diffusive model for magnon transport demonstrates how these data give evidence for the existence of two distinct length scales in thermal spin transport, a spin diffusion length and a magnon energy relaxation length.

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy (VV) and silicon vacancy (Vsi), obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from VV ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the relative charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC., Comment: 10 pages, figures

Although geometric phases in quantum evolution were historically overlooked, their active control now stimulates strategies for constructing robust quantum technologies. Here, we demonstrate arbitrary single-qubit holonomic gates from a single cycle of non-adiabatic evolution, eliminating the need to concatenate two separate cycles. Our method varies the amplitude, phase, and detuning of a two-tone optical field to control the non-Abelian geometric phase acquired by a nitrogen-vacancy center in diamond over a coherent excitation cycle. We demonstrate the enhanced robustness of detuned gates to excited-state decoherence and provide insights for optimizing fast holonomic control in dissipative quantum systems., Comment: Minor revisions to main text (6 pages); added supplementary material (7 pages)

The Weyl semimetal NbP exhibits an extremely large magnetoresistance (MR) and an ultra-high mobility. The large MR originates from a combination of the nearly perfect compensation between electron- and hole-type charge carriers and the high mobility, which is relevant to the topological band structure. In this work we report on temperature- and field-dependent thermopower and thermal conductivity experiments on NbP. Additionally, we carried out complementary heat capacity, magnetization, and electrical resistivity measurements. We found a giant adiabatic magnetothermopower with a maximum of 800 $\mu$V/K at 50 K in a field of 9 T. Such large effects have been observed rarely in bulk materials. We suggest that the origin of this effect might be related to the high charge-carrier mobility. We further observe pronounced quantum oscillations in both thermal conductivity and thermopower. The obtained frequencies compare well with our heat capacity and magnetization data., Comment: 6 pages, 3 figures

Weyl semimetals expand research on topologically protected transport by adding bulk Berry monopoles with linearly dispersing electronic states and topologically robust, gapless surface Fermi arcs terminating on bulk node projections. Here, we show how the Nernst effect, combining entropy with charge transport, gives a unique signature for the presence of Dirac bands. The Nernst thermopower of NbP (maximum of 800 microV K-1 at 9 T, 109 K) exceeds its conventional thermopower by a hundredfold and is significantly larger than the thermopower of traditional thermoelectric materials. The Nernst effect has a pronounced maximum near T_M=90 +/- 20 K=mu_0/kB (mu_0 is chemical potential at T=0 K). A self-consistent theory without adjustable parameters shows that this results from electrochemical potential pinning to the Weyl point energy at T>=TM, driven by charge neutrality and Dirac band symmetry. Temperature and field dependences of the Nernst effect, an even function of the charge polarity, result from the intrinsically bipolar nature of the Weyl fermions. Through this study, we offer an understanding of the temperature dependence of the position of the electrochemical potential vis-a-vis the Weyl point, and we show a direct connection between topology and the Nernst effect, a potentially robust experimental tool for investigating topological states and the chiral anomaly.

In topological Weyl semimetals, the low energy excitations are comprised of linearly dispersing Weyl fermions, which act as monopoles of Berry curvature in momentum space and result in topologically protected Fermi arcs on the surfaces. We propose that these Fermi arcs in Weyl semimetals lead to an anisotropic magnetothermal conductivity, strongly dependent on externally applied magnetic field and resulting from entropy transport driven by circulating electronic currents. The circulating currents result in no net charge transport, but they do result in a net entropy transport. This translates into a magnetothermal conductivity that should be a unique experimental signature for the existence of the arcs. We analytically calculate the Fermi arc-mediated magnetothermal conductivity in the low-field semiclassical limit as well as in the high-field ultra-quantum limit, where only the chiral Landau levels are involved. By numerically including the effects of higher Landau levels, we show how the two limits are linked at intermediate magnetic fields. This work provides the first proposed signature of Fermi arc-mediated thermal transport and sets the stage for utilizing and manipulating the topological Fermi arcs in experimental thermal applications., Comment: 16 pages, 6 figures

The Nernst thermopower usually is considered far too weak in most metals for waste heat recovery. However, its transverse orientation gives it an advantage over the Seebeck effect on non-flat surfaces. Here, we experimentally demonstrate the scalable generation of a Nernst voltage in an air-cooled metal wire coiled around a hot cylinder. In this geometry, a radial temperature gradient generates an azimuthal electric field in the coil. A Galfenol (Fe$_{0.85}$Ga$_{0.15}$) wire is wrapped around a cartridge heater, and the voltage drop across the wire is measured as a function of axial magnetic field. As expected, the Nernst voltage scales linearly with the length of the wire. Based on heat conduction and fluid dynamic equations, finite-element method is used to calculate the temperature gradient across the Galfenol wire and determine the Nernst coefficient. A giant Nernst coefficient of -2.6 ${\mu}$V/KT at room temperature is estimated, in agreement with measurements on bulk Galfenol. We expect that the giant Nernst effect in Galfenol arises from its magnetostriction, presumably through enhanced magnon-phonon coupling. Our results demonstrate the feasibility of a transverse thermoelectric generator capable of scalable output power from non-flat heat sources., Comment: 14 pages, 4 figures, and Supplementary Information

The nitrogen-vacancy (NV) center in diamond has been extensively studied in recent years for its remarkable quantum coherence properties that make it an ideal candidate for room temperature quantum computing and quantum sensing schemes. However, these schemes rely on spin-spin dipolar interactions, which require the NV centers to be within a few nanometers from each other while still separately addressable, or to be in close proximity of the diamond surface, where their coherence properties significantly degrade. Here we demonstrate a method for overcoming these limitations using a hybrid yttrium iron garnet (YIG)-nanodiamond quantum system constructed with the help of directed assembly and transfer printing techniques. We show that YIG spin-waves can amplify the oscillating field of a microwave source by more than two orders of magnitude and efficiently mediate its coherent interactions with an NV center ensemble. These results demonstrate that spin-waves in ferromagnets can be used as quantum buses for enhanced, long-range qubit interactions, paving the way to ultra-efficient manipulation and coupling of solid state defects in hybrid quantum networks and sensing devices., Comment: 7 pages, 4 figures

Previous research has shown positive correlations between EEG alpha activity and performing creative tasks. In this study, expert classical musicians (n=4) were asked to play their instrument while being monitored with a wireless EEG headset. Data was collected during two rehearsal types: (a) in their regular, fixed ensemble;; (b) in an improvised, mixed ensemble with unfamiliar musicians and less rehearsal time. A positive correlation was found between alpha power and the improvised setup (p<0.01, d=0.4). A positive correlation was also found between alpha power and more intense play (p<0.01, d=0.2). There was a negative correlation between alpha power and arousal due to stress, e.g., frowning after playing a false note (p<0.01, d=0.6). Finally, the real-time capabilities of wireless EEG monitoring were explored with a data visualisation during live performance on stage.

While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. Here we report on the pulsed laser deposition and characterization of thin films of a representative pyrochlore compound Bi2Ir2O7. The films were epitaxially grown on yttria-stabilized zirconia substrates and have lattice constants that are a few percent larger than that of the bulk single crystals. The film composition shows a strong dependence on the oxygen partial pressure. Density-functional-theory calculations indicate the existence of Bi_Ir antisite defects, qualitatively consistent with the high Bi: Ir ratio found in the films. Both Ir and Bi have oxidation states that are lower than their nominal values, suggesting the existence of oxygen deficiency. The iridate thin films show a variety of intriguing transport characteristics, including multiple charge carriers, logarithmic dependence of resistance on temperature, antilocalization corrections to conductance due to spin-orbit interactions, and linear positive magnetoresistance., Comment: To appear in Scientific Reports

Adiabatic evolutions find widespread utility in applications to quantum state engineering, geometric quantum computation, and quantum simulation. Although offering robustness to experimental imperfections, adiabatic processes are susceptible to decoherence due to their long evolution time. A general strategy termed "shortcuts to adiabaticity" (STA) aims to remedy this vulnerability by designing fast dynamics to reproduce the results of slow, adiabatic evolutions. Here, we implement a novel STA technique known as "superadiabatic transitionless driving" (SATD) to speed up stimulated Raman adiabatic passage (STIRAP) in a solid-state lambda ({\Lambda}) system. Utilizing optical transitions to a dissipative excited state in the nitrogen-vacancy (NV) center in diamond, we demonstrate the accelerated performance of different shortcut trajectories for population transfer and for the initialization and transfer of coherent superpositions. We reveal that SATD protocols exhibit robustness to dissipation and experimental uncertainty, and can be optimized when these effects are present. These results motivate STA as a promising tool for controlling open quantum systems comprising individual or hybrid nanomechanical, superconducting, and photonic elements in the solid state., Comment: 20 pages, 4 figures

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes., Comment: 193 pages, including 28 figures inserted after text and references. Paper accepted in Reviews of Modern Physics

Weyl semimetals are predicted to realize the three-dimensional axial anomaly first discussed in particle physics. The anomaly leads to unusual transport phenomena such as the chiral magnetic effect in which an applied magnetic field induces a current parallel to the field. Here we investigate diagnostics of the axial anomaly based on the fundamental equations of axion electrodynamics. We find that materials with Weyl nodes of opposite chirality and finite energy separation immersed in a uniform magnetic field exhibit an anomaly-induced oscillatory magnetic field with a period set by the chemical potential difference of the nodes. In the case where a chemical potential imbalance is created by applying parallel electric and magnetic fields, we find a suppression of the magnetic field component parallel to the electric field inside the material for rectangular samples, suggesting that the chiral magnetic current opposes this imbalance. For cylindrical geometries, we instead find an enhancement of this magnetic field component along with an anomaly-induced azimuthal component. We propose experiments to detect such magnetic signatures of the axial anomaly., Comment: 5 pages, 2 figures

We report temperature-dependent spin-Seebeck measurements on Pt/YIG bilayers and Pt/NiO/YIG trilayers, where YIG (Yttrium iron garnet, Y$_3$Fe$_5$O$_{12}$) is an insulating ferrimagnet and NiO is an antiferromagnet at low temperatures. The thickness of the NiO layer is varied from 0 to 10 nm. In the Pt/YIG bilayers, the temperature gradient applied to the YIG stimulates dynamic spin injection into the Pt, which generates an inverse spin Hall voltage in the Pt. The presence of a NiO layer dampens the spin injection exponentially with a decay length of $2 \pm 0.6$ nm at 180 K. The decay length increases with temperature and shows a maximum of $5.5 \pm 0.8$ nm at 360 K. The temperature dependence of the amplitude of the spin-Seebeck signal without NiO shows a broad maximum of $6.5 \pm 0.5$ $\mu$V/K at 20 K. In the presence of NiO, the maximum shifts sharply to higher temperatures, likely correlated to the increase in decay length. This implies that NiO is most transparent to magnon propagation near the paramagnet-antiferromagnet transition. We do not see the enhancement in spin current driven into Pt reported in other papers when 1-2 nm NiO layers are sandwiched between Pt and YIG.

Transverse thermoelectric devices produce electric fields perpendicular to an incident heat flux. Classically, this process is driven by the Nernst effect in bulk solids, wherein a magnetic field generates a Lorentz force on thermally excited electrons. The spin Seebeck effect (SSE) also produces magnetization-dependent transverse electric fields. SSE is traditionally observed in thin metallic films deposited on electrically insulating ferromagnets, but the films' high resistance limits thermoelectric conversion efficiency. Combining Nernst and SSE in bulk materials would enable devices with simultaneously large transverse thermopower and low electrical resistance. Here we demonstrate experimentally this is possible in composites of conducting ferromagnets (Ni or MnBi) containing metallic nanoparticles with strong spin-orbit interactions (Pt or Au). These materials display positive shifts in transverse thermopower attributable to inverse spin Hall electric fields in the nanoparticles. This more than doubles the power output of the Ni-Pt materials, establishing proof-of-principle that SSE persists in bulk nanocomposites.

Magnon-drag is shown to dominate the thermopower of elemental Fe from 2 to 80 K and of elemental Co from 150 to 600 K; it is also shown to contribute to the thermopower of elemental Ni from 50 to 500 K. Two theoretical models are presented for magnon-drag thermopower. One is a hydrodynamic theory based purely on non-relativistic, Galilean, spin-preserving electron-magnon scattering. The second is based on spin-motive forces, where the thermopower results from the electric current pumped by the dynamic magnetization associated with a magnon heat flux. In spite of their very different microscopic origins, the two give similar predictions for pure metals at low temperature, allowing us to semi-quantitatively explain the observed thermopower of elemental Fe and Co without adjustable parameters. We also find that magnon-drag may contribute to the thermopower of Ni. A spin-mixing model is presented that describes the magnon-drag contribution to the Anomalous Nernst Effect in Fe, again enabling a semi-quantitative match to the experimental data without fitting parameters. Our work suggests that particle non-conserving processes may play an important role in other types of drag phenomena, and also gives a predicative theory for improving metals as thermoelectric materials., Comment: main text plus 7 figures; accepted in PRB September 2016

The phase relation between quantum states represents an essential resource for the storage and processing of quantum information. While quantum phases are commonly controlled dynamically by tuning energetic interactions, utilizing geometric phases that accumulate during cyclic evolution may offer superior robustness to noise. To date, demonstrations of geometric phase control in solid-state systems rely on microwave fields that have limited spatial resolution. Here, we demonstrate an all-optical method based on stimulated Raman adiabatic passage to accumulate a geometric phase, the Berry phase, in an individual nitrogen-vacancy (NV) center in diamond. Using diffraction-limited laser light, we guide the NV center's spin along loops on the Bloch sphere to enclose arbitrary Berry phase and characterize these trajectories through time-resolved state tomography. We investigate the limits of this control due to loss of adiabiaticity and decoherence, as well as its robustness to noise intentionally introduced into the experimental control parameters, finding its resilience to be independent of the amount of Berry phase enclosed. These techniques set the foundation for optical geometric manipulation in future implementations of photonic networks of solid state qubits linked and controlled by light., Comment: 18 pages, 5 figures

We study the temperature dependence of the longitudinal spin-Seebeck effect (LSSE) in a yttrium iron garnet Y3Fe5O12 (YIG) / Pt system for samples of different thicknesses. In this system, the thermal spin torque is magnon-driven. The LSSE signal peaks at a specific temperature that depends on the YIG sample thickness. We also observe freeze-out of the LSSE signal at high magnetic fields, which we attribute to the opening of an energy gap in the magnon dispersion. We observe partial freeze-out of the LSSE signal even at room temperature, where kBT is much larger than the gap. This suggests that a subset of the magnon population with an energy below kB x TC (TC about 40 K) contribute disproportionately to the LSSE; at temperatures below TC, we label these magnons subthermal magnons. The T-dependence of the LSSE at temperatures below the maximum is interpreted in terms of a new empirical model that ascribes most of the temperature dependence to that of the thermally driven magnon flux., Comment: 26 pages, 5 figures

Here we report on the effect of rare earth Gd-doping on the magnetic properties and magnetotransport of GaN two-dimensional electron gasses (2DEGs). Samples are grown by plasma-assisted molecular beam epitaxy and consist of AlN/GaN heterostructures where Gd is delta-doped within a polarization-induced 2DEG. Ferromagnetism is observed in these Gd-doped 2DEGs with a Curie temperature above room temperature and an anisotropic spontaneous magnetization preferring an out-of-plane (c-axis) orientation. At magnetic fields up to 50 kOe, the magnetization remains smaller for in-plane configuration than for out-of-plane, which is indicative of exchange coupled spins locked along the polar c-axis. The sample with the lowest Gd concentration (2.3 $\times$ $10^{14}$ cm$^{-2}$) exhibits a saturation magnetization of 41.1 $\mu_B/Gd^{3+}$ at 5 K revealing that the Gd ion spins (7 ${\mu}_B$) alone do not account for the magnetization. Surprisingly, control samples grown without any Gd display inconsistent magnetic properties; in some control samples weak ferromagnetism is observed and in others paramagnetism. The ferromagnetic 2DEGs do not exhibit the anomalous Hall effect; the Hall resistance varies non-linearly with the magnetic field, but does not track the magnetization indicating the lack of coupling between the ferromagnetic phase and the conduction band electrons within the 2DEG., Comment: 27 pages of text, 11 figures, 4 tables

A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn, leads to a redistribution of all electrons in the host, and, if designed properly, changes the location of the Fermi level EF and the density of conducting charge carriers near EF. The principle is proven experimentally in elemental Bi, whereby group III elements In and Ga dope Bi p-type, in spite of the fact that all three atoms are trivalent in the solid state. Electronic structure calculations show the formation of a hyperdeep defect state (HDS) and its effect on the EF in Bi doped with In (Bi:In) and Ga (Bi:Ga). The HDS at -5 to -6 eV below the EF of elemental Bi hybridizes with the Bi 6p electrons, and deprives the Bi valence band of two electrons per impurity atom. This then perturbs the electron count in the solid and lowers the EF. The charge on the impurity atoms is unchanged. In principle, this doping action does not result in the appearance of ionized impurities that scatter conduction electrons and holes in conventional doping. Experimentally, Shubnikov - de Haas and Hall Effect measurements show that adding In to Bi results in an increase in the density of holes. Thermoelectric, galvanomagnetic and thermomagnetic data are given for single-crystal and polycrystalline samples. In-doping leads to an enhancement of the thermoelectric figure of merit, which suggests that the new doping mechanism also gives a route to develop better thermoelectric materials. The same mechanism is at work for Sn-doped Bi (Bi:Sn), although here ionized impurity scattering is not avoided., Comment: ver. 3, much extended and rewritten, supplement included

We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen doping during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal. We show that the NV density can be controlled by the implantation dose without necessitating increase of the nitrogen incorporation. By implanting a large 12C dose through nanoscale apertures, we can localize an individual NV center within a volume of (~180 nm)**3 at a deterministic position while reproducibly preserving a coherence time (T2) > 300 {\mu}s. Our approach enables integration of NV centers into diamond nanostructures to realize scalable spin-sensing devices as well as coherent spin coupling mediated by photons and phonons., Comment: 21 pages, 3 figures