101. Side-dependent electron escape from graphene- and graphane-like SiC layers
- Author
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M. Marsili, Friedhelm Bechstedt, Paola Gori, Olivia Pulci, Gori, Paola, Pulci, O., Marsili, M., and Bechstedt, F.
- Subjects
Physics and Astronomy (miscellaneous) ,Silicon ,Condensed matter physics ,Silicene ,Graphene ,chemistry.chemical_element ,02 engineering and technology ,Electronic structure ,021001 nanoscience & nanotechnology ,01 natural sciences ,Settore FIS/03 - Fisica della Materia ,law.invention ,chemistry.chemical_compound ,chemistry ,Electron affinity (data page) ,law ,0103 physical sciences ,Graphane ,Density functional theory ,Ionization energy ,two-dimensional materials, silicon carbide, ionization potential, density functional theory calculations, GW calculations ,010306 general physics ,0210 nano-technology - Abstract
The structural and electronic properties of SiC-based two-dimensional (2D) crystals are studied by means of density functional theory and many-body perturbation theory. Such properties cannot simply be interpolated between graphene and silicene. The replacement of half of the C atoms by Si atoms opens a large direct electronic gap and destroys the Dirac cones. Hydrogenation further opens the gap and significantly reduces the electron affinity to 0.1 or 1.8 eV in dependence on the carbon or silicon termination of the 2D crystal surface, thus showing a unique direction dependent ionization potential. This suggests the use of 2D-SiC:H as electron or hole filter.
- Published
- 2012
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