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2,508 results on '"Noda, S"'

101. Investigation of narrow-band thermal emission from intersubband transitions in quantum wells.

Author

De Zoysa, M., Asano, T., Inoue, T., Mochizuki, K., and Noda, S.

Subjects
QUANTUM wells, EMISSIONS (Air pollution), LORENTZIAN function, WAVELENGTHS, DOPING agents (Chemistry)
Abstract

We investigate thermal emission from n-doped GaAs/AlGaAs quantum wells (QWs). Emission peaks with Lorentzian shapes (linewidth 11~19 meV) that reflect transitions between the first and second conduction subbands are observed in the mid-infrared range. It is demonstrated that the emission characteristics can be tuned by modifying the QW parameters. The peak emissivity is increased from 0.3 to 0.9 by modifying the doping density, and the peak wavelength is tuned from 6 to 10 μm by changing the well width. The obtained results are useful for the design of narrow-band thermal emitters. [ABSTRACT FROM AUTHOR]

Published
2015
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106. Visualization of Radium-223 chloride using an omnidirectional gamma-ray imaging Compton camera for radioactive environmental monitoring

Author

Muraishi, H., primary, Kondo, R., additional, Watanabe, T., additional, Enomoto, R., additional, Katagiri, H., additional, Kagaya, M., additional, Kano, D., additional, Takeda, T., additional, Noda, S., additional, Kikuchi, K., additional, Hara, H., additional, Maegaki, T., additional, Uchida, T., additional, and Tanaka, M., additional

Published
2018
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108. MASTER KEY project: A basket/umbrella trial for rare cancers in Japan

Author

Noda, S., primary, Yonemori, K., additional, Shirakawa, N., additional, Okuma, H.S., additional, Shimizu, T., additional, Hirakawa, A., additional, Shibata, T., additional, Sukigara, T., additional, Okita, N., additional, Kawai, A., additional, Yamamoto, N., additional, Nakamura, K., additional, Mano, H., additional, Nishida, T., additional, and Fujiwara, Y., additional

Published
2018
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117. 555 Integrating serum and skin biomarkers to assess disease extent beyond clinical scores, advancing precision therapeutics

Author

Malik, K., primary, Czarnowicki, T., additional, Wen, H., additional, Noda, S., additional, Pavel, A.B., additional, Nakajima, S., additional, Honda, T., additional, Shin, J.U., additional, Lee, H., additional, Krueger, J.G., additional, Lee, K., additional, Kabashima, K., additional, and Guttman-Yassky, E., additional

Published
2018
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118. Abstract No. 694 The impact of virtual liver parenchymal perfusion using existing 3-dimensional workstation and simulation software in conventional transcatheter arterial chemoembolization for hepatocellular carcinoma

Author

Kinoshita, M., primary, Takechi, K., additional, Nagao, Y., additional, Izumi, S., additional, Arai, Y., additional, Shirono, R., additional, Iwamoto, S., additional, Takao, S., additional, Noda, S., additional, Ueno, J., additional, and Harada, M., additional

Published
2018
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120. Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes.

Author

Kojima, K., Yamaguchi, A. A., Funato, M., Kawakami, Y., and Noda, S.

Subjects
QUANTUM wells, QUANTUM chemistry, MOLECULAR orbitals, DIODES, STARK effect
Abstract

The radiation properties of nonpolar AlGaN quantum wells (QWs) were theoretically investigated by comparing them to those of c-plane AlGaN QWs with heavy holes as the top valence band (VB). First, the conditions to minimize the threshold carrier density of c-plane QW laser diodes were explored. A thin well width (∼1 nm) and reduction of the Al content in the well layer were important to reduce threshold carrier density because narrow wells suppressed the quantum confined Stark effect and AlGaN with a lower Al content had a lower density of states. Moreover, the emission wavelength was widely controlled by tuning the Al contents of both the well and barrier layers under the proposed conditions. Then the properties of nonpolar AlGaN QWs were investigated. Nonpolar AlGaN had several superior characteristics compared to c-plane QWs, including large overlap integrals, optical polarization suitable for both edge and surface emissions, an almost linearly polarized optical dipole between the conduction band and top VB due to the isolated VBs, and a reduced VB density of state. Finally, the threshold carrier densities of both nonpolar and optimized c-plane QWs were compared as functions of the transition wavelength. At a given wavelength, the threshold of nonpolar QWs was lower than that of c-plane ones. Particularly below 260 nm, nonpolar QWs had a low threshold, whereas that of c-plane QWs drastically increased due to the large VB mass of AlN and carrier population in the crystal-field splitting band. [ABSTRACT FROM AUTHOR]

Published
2011
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121. Valence band effective mass of non-c-plane nitride heterostructures.

Author

Kojima, K., Funato, M., Kawakami, Y., and Noda, S.

Subjects
ENERGY bands, NITRIDES, HETEROSTRUCTURES, PERTURBATION theory, QUANTUM wells, ENERGY-band theory of solids
Abstract

Valence band (VB) effective masses of nonpolar and semipolar nitride heterostructures were studied using k·p perturbation theory, with a particular focus on band mixing. When the absolute value of the energy separation of the topmost two VBs (|ΔE|) is sufficiently larger than the spin-orbit interaction (Δso), the mixing between these two VBs was negligible. This enabled us to calculate an analytical expression for VB mass expression. Under this condition, the effective mass of the top VB was reduced less than 10% along a certain direction, and less than 25% for an in-plane (x′y′-plane) average, compared to the c-plane case. When ΔE was comparable with Δso, however, the VB structure became isotropic due to band mixing. Consequently, the VB band structure approached that of the c-plane and optical polarization was suppressed. On the other hand, VB mass along the growth direction (z′) was always heavy, similar to that of the c-plane. However, the topmost two VBs had slightly different mass values along z′, which affected radiative properties of non-c-plane nitride quantum wells (less than 2 nm wide) through the difference in quantum confinement strengths. [ABSTRACT FROM AUTHOR]

Published
2010
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123. Dried plasma spot assay for sunitinib and its active metabolite by high performance liquid chromatography tandem mass spectrometry

Author

Makihara, R.A., primary, Maeda, M., additional, Itahashi, K., additional, Noda, S., additional, Sato, J., additional, Murakami, S., additional, Goto, Y., additional, Kanda, S., additional, Fujiwara, Y., additional, Horinouchi, H., additional, Tsukamoto, T., additional, Hashimoto, H., additional, Makino, Y., additional, Yamamoto, N., additional, Ohe, Y., additional, and Terakado, H., additional

Published
2017
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130. Excitonic band edges and optical anisotropy of InAs/InP quantum dot structures.

Author

Mazur, Yu. I., Noda, S., Tarasov, G. G., Dorogan, V. G., Salamo, G. J., Bierwagen, O., Masselink, W. T., Decuir Jr., E. A., and Manasreh, M. O.

Subjects
*INDIUM compounds, *ARSENIDES, *INDIUM phosphide, *EXCITON theory, *CONDUCTION electrons
Abstract

Optical transitions in InAs/InP quantum dot structures are studied and interpreted in terms of heavy- (hh) and light-hole (lh) excitons originating in InAs valence band. Appearance of a step-like absorption and two activation energies in photoluminescence spectra of quantum dots under temperature elevation is described as a transition from the excitonic states to the two-dimensional-like states realized in the InAs/InP quantum dots. A mixture of hh and lh states determines the anisotropy of the transmission spectra and may result in rotation of the polarization plane for light transmitted through the InAs/InP quantum dot system. [ABSTRACT FROM AUTHOR]

Published
2008
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131. Structural and morphological control of nanosized Cu islands on SiO[sub 2] using a Ti underlayer.

Author

Minghui Hu, S., Suguru Noda, S., Tatsuya Okubo, Yukio Yamaguchi, and Hiroshi Komiyama, S.

Subjects
*NANOSTRUCTURED materials, *COPPER, *SILICON oxide, *TITANIUM
Abstract

The structure and morphology of nanosized Cu islands grown by sputter deposition on clean SiO[sub 2] substrates and Ti-underlayered SiO[sub 2] substrates are investigated using transmission electron microscopy. On SiO[sub 2], spherical Cu islands with a random crystalline orientation are formed, whereas on Ti/SiO[sub 2], semispherical islands with a preferred <111> crystalline orientation are formed. Moreover, the Cu islands on Ti/SiO[sub 2] have smaller sizes, shorter interisland distances, and a higher number density than those on SiO[sub 2]. These structural and morphological changes at the nanoscale are discussed from the viewpoint of interfacial interactions. Our study suggests that by using an appropriate metal underlayer, it is possible to fabricate nanosized islands with the desired wettability, crystalline orientation, as well as morphology of island ensembles. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2003
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139. 298 RNA-seq profiling highlights the robust inflammation and Th17-skewing of the non-lesional Asian atopic dermatitis phenotype

Author

Wen, H., primary, Malik, K., additional, Noda, S., additional, Ungar, B., additional, Suprun, M., additional, Nakajima, S., additional, Honda, T., additional, Lee, H., additional, Suarez-Farinas, M., additional, Krueger, J.G., additional, Kabashima, K., additional, Lee, K., additional, and Guttman-Yassky, E., additional

Published
2017
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144. High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

Author

Lee, Y.-J., primary, Hong, T.-C., additional, Hsueh, F.-K., additional, Sung, P.-J., additional, Chen, C.-Y., additional, Chuang, S.-S., additional, Cho, T.-C., additional, Noda, S., additional, Tsou, Y.-C., additional, Kao, K.-H., additional, Wu, C.-T., additional, Yu, T.-Y., additional, Jian, Y.-L., additional, Su, C.-J., additional, Huang, Y.-M., additional, Huang, W.-H., additional, Chen, B.-Y., additional, Chen, M.-C., additional, Huang, K.-P., additional, Li, J.-Y., additional, Chen, M.-J., additional, Li, Y., additional, Samukawa, S., additional, Wu, W.-F., additional, Huang, G.-W., additional, Shieh, J.-M., additional, Tseng, T.-Y., additional, Chao, T.-S., additional, Wang, Y.-H., additional, and Yeh, W.-K., additional

Published
2016
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145. Efficacy and safety of enzalutamide (ENZ) vs placebo (PL) in chemotherapy-naïve patients (pts) with progressive metastatic castration-resistant prostate cancer (mCRPC) following androgen deprivation therapy (ADT): An Asian multinational study

Author

Ye, D., primary, Ahn, H., additional, Pu, Y.-S., additional, Weiqing, H., additional, Xie, L.-P., additional, Huang, S.-P., additional, Wu, H.-C., additional, Ma, L., additional, Yamada, S., additional, Noda, S., additional, and Sun, Y., additional

Published
2016
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148. Growth temperature dependence of intrinsic and extrinsic acceptor concentration in (Ga,Al)Sb evaluated by C-V characteristics of metal-insulator-semiconductor structures.

Author

Takeda, Y., Noda, S., and Sasaki, A.

Subjects
*GALLIUM, *ALUMINUM, *ANTIMONY, *METAL insulator semiconductors, *ELECTROLYTIC oxidation
Abstract

Discusses a study that evaluated growth temperature dependence of intrinsic and extrinsic acceptor concentration in gallium, aluminum (Ga,Al) antimony (Sb) by C-V characteristics of metal-insulator-semiconductor (MIS) structures. Description of anodic oxidation of (Ga, Al) Sb; Details on the low-temperature liquid-phase epitaxy growth of (Ga, Al) Sb; Fabrication of MIS diodes and evaluation of impurity concentration.

Published
1985
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