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Your search keyword '"Nazarov, Alexei N."' showing total 110 results
Start Over Author "Nazarov, Alexei N."
110 results on '"Nazarov, Alexei N."'

104. Smart Cut Technology: The Path for Advanced SOI Substrates

Author

Moriceau, H., Lagahe-Blanchard, C., Fournel, F., Pocas, S., Jalaguier, E., Perreau, P., Deguet, C., Ernst, T., Beaumont, A., Kernevez, N., Hartman, J.M., Ghyselen, B., Aulnette, C., Letertre, F., Rayssac, O., Faure, B., Richtarch, C., Cayrefourq, I., Flandre, Denis, editor, Nazarov, Alexei N., editor, and Hemment, Peter L.F., editor

Published
2005
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110. Single electron transistors with hydrogen treatment of ALD SiO 2 in nanoscale metal-insulator-metal tunnel junctions.

Author

Karbasian G, McConnell MS, Orlov AO, Nazarov AN, and Snider GL

Abstract

Over the past five years, fabrication of metal-insulator-metal (MIM) single electron transistors (SET) featuring atomic layer deposition (ALD) of ultrathin tunnel barrier dielectrics (SiO 2 , Al 2 O 3 ) has been reported. However, the performance of fabricated devices was significantly compromised by the presence of native metal oxide and problems associated with the nucleation of ALD dielectrics on metal substrates. To overcome the difficulty of dielectric ALD nucleation on metal substrates, we recently developed a fabrication technique in which the native metal oxide naturally forming in the presence of the ALD oxidant precursor is first used to promote the nucleation of ALD dielectrics, and then is chemically reduced by forming gas anneal (FGA) at temperatures near 400 °C. However, despite the elimination of native oxide, low temperature characterization of the devices fabricated using FGA reveals excess 'switching' noise of a very large magnitude resulting from charged defects within the junctions. It has been previously reported that remote hydrogen plasma (RHP) treatment of SiO 2 thin films effectively eradicates fabrication defects. This work reports a comparative study of Ni-based MIM SET treated with FGA and/or RHP. We show that, using a combination of FGA and RHP treatments, it is possible to obtain MIM junctions free of switching noise and without a detectable contribution of native oxide.

Published
2017
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