101. Nonreciprocal lasing and polarization selectivity in silicon ring Raman laser based on micro-and nano-scale waveguides
- Author
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Nathalie Vermeulen and Brussels Photonics Team
- Subjects
Materials science ,Raman amplification ,business.industry ,WAVELENGTH CONVERSION ,DIRECTIONALITY ,Physics::Optics ,AMPLIFICATION ,BISTABILITY ,GENERATION ,Laser ,Polarization (waves) ,Gain-switching ,law.invention ,symbols.namesake ,RESONATORS ,Optics ,Raman laser ,law ,symbols ,Optoelectronics ,business ,Raman spectroscopy ,Lasing threshold ,Raman scattering - Abstract
In this paper I present a generic model that describes the lasing characteristics of continuous-wave circular and racetrack-shaped ring Raman lasers based on micro- and nano-scale silicon waveguides, including their lasing directionality and polarization behavior. This model explicitly takes into account the effective Raman gain values for forward and backward lasing, the Raman amplification in the bus waveguide, and the spatial gain variations for different polarization states in the ring structure. I show numerically that ring lasers based on micro-scale waveguides generate unidirectional lasing in either the forward or backward direction because of an asymmetry in nonlinear losses at near-infrared telecommunication wavelengths, whereas those based on nanowires yield only backward lasing due to a non-reciprocity in effective gain. Furthermore, the model indicates that backward lasing can yield a significantly higher lasing output at the bus waveguide facets than lasing in the forward direction. Finally, considering a TE-polarized pump input for a (100) grown silicon ring Raman laser, I demonstrate numerically that the polarization state of the lasing radiation strongly depends on whether micro-scale or nano-scale waveguides are used.
- Published
- 2012