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A leading role of the ecological culture of society in solving the problems of the modern ecological crisis, the importance of environmental education in the formation of the ecological world outlook of young people, especially students, to ensure the successful sustainable development of the state, determines the relevance of research. The purpose of the work is to assess the level of environmental consciousness of students, the impact on it of environmental education during the period of study at universities. The research was carried out by questioning, testing students of the National Metallurgical Academy of Ukraine of different courses and directions of training with the following analysis of their results. During the research methods M. Rokicha, "Dominant" and "Naturfil" were used. These techniques are proven, fairly versatile, easy to use and very popular in practice. As a result, the structure of value orientations and the place of nature in the student values system, the degree of priority of their relation to nature, the indicators of the formation of environmental consciousness on individual components and in general, the dynamics of its changes during the study at the academy was determined. It is established that evaluation of the importance of instrumental and terminal values in different groups of students is close to each other and they attribute nature to secondary values. This is confirmed by the diagnostic data based on the modified "Dominant" techniques, where nature takes place in a group with average dominance. Most students have an average level of intensity in relation to nature, but environmentalists% of high levels are about 2 times more likely than other students and less than% of levels with a reduced attitude to nature. Ecologists have a close connection between the time of training and the level of components of environmental consciousness. Other students do not have such a positive dynamic. At the senior courses there is even a decline in the level of attitude to nature. This gives evidence of the urgent need to adjust the content of technical disciplines and strengthen their environmental component.

Equipment of the Krasnoyarsk HPP is considered as an example to analyze the dependence of crack formation in runner blades on the operating conditions of the turbines since their commissioning. It was established that intensive crack formation in blades in the initial (running-in) period was due to manufacturing-induced high residual stresses and internal material defects. The blade failure rate increased with water head and, hence, the output of the hydroelectric units. The absence of cracks in the blades today indicates that the lifetime of the runners has not ended yet.

Inadequate efficiency with which the energy of water flow is used is the basic reason why it is necessary to reconstruct hydraulic turbine equipment with lengthy service life. Hydraulic turbines constructed in the Soviet period are characterized by high reliability indicators even after 50 – 60 years of service, i.e., the age of hydraulic units does not play a decisive role in reducing the reliability of equipment.

Backgrоund. Osteoporosis is an important factor in the pathogenesis of orthopedic manifestations in children with cerebral palsy. It was previously demonstrated that children with cerebral palsy have specific changes in bone metabolism, which can cause changes in laboratory parameters compared with other orthopedic patients without neurological backgrounds. Aim. The aim of this study was to assess bone metabolism biomarkers in children with cerebral palsy, identifying distinguishing characteristic patterns in comparison with patients with orthopedic pathology without neurological backgrounds. Materials and methods. This study evaluated the concentrations of calcium, phosphorus, -cross laps, osteocalcin, vitamin D, CICP, and alkaline phosphatase in the blood serum of 50 children with cerebral palsy aged between 6 to 12 years with GMFCS levels IIII. The control group consisted of 50 patients with plano-valgus deformities of the feet. Results. The alkaline phosphatase activity in the group of children with cerebral palsy was 170.25 59.35 u/L, while in the control group it was 145.58 46.29 u/L; the CICP concentration in the study group was higher than in the control group (324.01 174.10 and 269.68 240.98, respectively). The concentration of -cross laps, osteocalcin, calcium, and vitamin D in the study group was lower than in children with flat feet. Conclusions. This study demonstrated multidirectional changes in the biomarkers of bone metabolism that are characteristic of walking children with cerebral palsy. These changes are characterized by a corresponding increase in the activity of osteoresorption and osteoreparation. This makes it possible to justify the combined use of metabolites and metabolic activators (calcium and vitamin D) and drugs that suppress osteoresorption (bisphosphonates) for the prevention and treatment of osteoporosis in children with cerebral palsy.

In the article, according to international statistics (FAOSTAT), the dynamics of the duck population and the production of duck meat in the world, in Ukraine and in certain countries in the period 2016-2020 are given. It is established that in 2020 the duck population in the world slightly decreased (by 0.75%). At the same time, the largest number of ducks is concentrated in China – 62.7 and 60.6% of the world's population, respectively, in 2016 and 2020. Ukraine took tenth place in this ranking in 2020. With a slight fluctuation in the number of ducks in the world, a tendency to its increase was noted in the production of meat – by 37.8% compared to 2016. However, in Asian countries, ducks are bred not only for meat, but also for eggs, which are used as food. Duck egg consumption is about 10-30% of total egg consumption in China and Southeast Asia. Among the population of South-East Asian countries, such a product as "balyut" is popular, which is prepared using a duck egg with an embryo about 18 days old. Based on the analysis of data from various literary sources, the issue of duck keeping systems in different countries of the world and Ukraine is highlighted. Since ducks belong to waterfowl, along with the intensive technology of keeping them (in closed rooms with a microclimate that is controlled and regulated), extensive technology is also used – using walks, including water ones. In Ukraine, 97.5% of the duck population is kept in public farms, and therefore the main system of their keeping is extensive. The importance of complete feeding of ducks is also indicated, recommendations are given regarding the nutritional value of rations depending on the age of the bird. In Ukraine, the largest farm engaged in the industrial production of duck meat is the Poultry Brood Plant “Korobivskyi” JLLC of the Zolotonosha district of the Cherkasy region. The production of duck meat using intensive technology involves the use of high-production crosses, the keeping of poultry in poultry houses with a regulated microclimate and complex mechanization and automation of technological processes, and the feeding of poultry with complete ration compound feed.

We have developed technology and construction solutions system to increase differential pairs (DP) of JFet with p- and n-channels identity, which are included into silicon complementary bipolar process of SPE “Pulsar” (Moscow). The possibility of creating several types of JFet DPs within the process is shown. The paper presents the results of experimental studies of two types of DP JFet designs with p- and n-channels for the spread of gate-source voltage ΔVGS depending on the drain current and drain-source voltage. The main features of the first design of p-channel JFets were the following: formation of drain/source area due to passive base of npn-transistor and deep collector areas for pnp-transistor; channel formation based on p-layer collector of pnp-transistor; formation of bottom gate using p+ buried layer; top gate formation due to active base and polysilicon emitter of npn-transistor. A feature of the second JFet design was top gate formation due to passive base. The designs of the first and second types of n-channel Jfet were formed similarly, taking into account the replacement of the applied areas of bipolar transistors with opposite ones in the type of conductivity. It was found that with increasing drain current ΔVGS decreases, and with increasing drain-source voltage ΔVGS at high currents increases for DP based on p-channel JFet with the first type of design. The maximum difference ΔVGS was in the range of 5–80 mV for a given differential pair JFet with a p-channel. On plots for DP p-channel JFet with the second type design a significantly lower voltage spread ΔVGS was shown: for example, for the drain current ID = 50 μA the voltage spread ΔVGS did not exceed 10mV. In this case the voltage spread ΔVGS practially did not depend on drain-source voltage in contrast to differenctial pair of the first type. The second type JFet n-channel differential pairs like for the DP p-channel JFet provided lower spread values in comparison with the first type design: ΔVGS reached values of 5-20 mV. Moreover, for the design of the second type, a significantly weaker effect of the drain-source voltage on ΔVGS was observed at high current densities. The developed designs of differential pairs based on p- and n-channel JFet are recommended for use in organizing the production of CBiCJFet analog circuits, including operations at low temperatures., Разработана система технологических и конструктивных решений, обеспечивающая повышение идентичности дифференциальных пар (DP) полевых транзисторов с управляющим p-n переходом (JFet) с p- и n-каналами, встроенных в кремниевый комплементарный биполярный технологический процесс АО «НПП «Пульсар» (г. Москва). Показано, что в рамках данного технологического процесса возможно создание нескольких типов DP JFet. В работе представлены результаты экспериментальных исследований двух типов конструкций DP JFet с p- и n- каналами по разбросу напряжения затвор-исток ΔVGS в зависимости от тока стока и напряжения сток-исток. К основным особенностям первой конструкции p-канального Jfet относились: формирование областей стока/истока за счёт пассивной базы npn-транзистора и областей глубокого коллектора pnp-транзистора; формирование канала на основе p–слоя коллектора pnp-транзистора; формирование нижнего затвора с применением p+ скрытого слоя; формирование верхнего затвора за счёт активной базы и поликремниевого эмиттера npn-транзистора. Особенностью второй конструкции Jfet являлось формирование верхнего затвора за счёт пассивной базы. Конструкции первого и второго типов n-канальных Jfet формировались аналогично с учетом замены применяемых областей биполярных транзисторов на противоположные по типу проводимости. Для DP на основе p-канальных JFet с конструкцией первого типа установлено, что с ростом тока стока величина ΔVGS снижается, а с увеличением напряжения сток-исток ΔVGS при высоких токах возрастает. Для данной дифференциальной пары JFet с p-каналом максимальная разница DVGS лежит в пределах 5–80 мВ. Для DP p-канальных JFet с конструкцией второго типа приведены графики, показывающие существенно меньшее значение разброса напряжений ΔVGS: например, для значения тока стока ID = 50 мкА разброс напряжений ΔVGS не превышает 10 мВ. При этом, в отличие от первого типа DP, разброс напряжения ΔVGS практически не зависит от напряжения сток-исток. Как и для DP p-канальных JFet дифференциальные пары n-канальных JFet второго типа обеспечили меньшие значения разброса в сравненни с конструкцией первого типа: ΔVGS достигает значений 5 – 20 мВ. Также для конструкции второго типа наблюдалось значительно более слабое влияние напряжения сток-исток на ΔVGS при высоких плотностях тока. Разработанные конструкции дифференциальных пар на основе p- и n-канальных JFet рекомендуется использовать при организации производства CBiCJFet аналоговых микросхем, в том числе для эксплуатации в условиях низких температур., Розроблено систему технологічних і конструктивних рішень, що забезпечує підвищення ідентичності диференціальних пар (DP) польових транзисторів з керуючим p-n переходом (JFet) з p- і n-каналами, що вбудованих в кремнієвий комплементарний біполярний технологічний процес АТ «НВП «Пульсар». Показано, що в рамках даного технологічного процесу можливе створення декількох типів DP JFet. В роботі представлені результати експериментальних досліджень двох типів конструкцій DP JFet з p- і n- каналами з розкидом напруги затвор-витік ΔVGS в залежності від струму стоку і напруги стік-витік. До основних особливостей першої конструкції p-канального Jfet ставилися: формування областей стоку / витоку за рахунок пасивної бази npn-транзистора і областей глибокого колектора pnp-транзистора; формування каналу на основі p-шару колектора pnp-транзистора; формування нижнього затвору з застосуванням p+ прихованого шару; формування верхнього затвору за рахунок активної бази і полікремнієвогох емітера npn-транзистора. Особливістю другої конструкції Jfet було формування верхнього затвору внаслідок пасивної бази. Конструкції першого і другого типів n-канальних Jfet формувалися аналогічно з урахуванням заміни застосовуваних областей біполярних транзисторів на протилежні за типом провідності. Для DP на основі p-канальних JFet з конструкцією першого типу встановлено, що зі зростанням струму стоку величина ΔVGS знижується, а зі збільшенням напруги стік-витік ΔVGS за великих струмах зростає. Для даної диференціальної пари JFet з p-каналом максимальна різниця ΔVGS лежить в межах 5 - 80 мВ. Для DP p-канальних JFet з конструкцією другого типу наведено графіки, що показують істотно менше значення розкиду напруг ΔVGS: наприклад, для значення струму стоку ID = 50 мкА розкид напруг ΔVGS не перевищує 10 мВ. При цьому, на відміну від першого типу DP, розкид напруги ΔVGS практично не залежить від напруги стік-витік. Як і для DP p-канальних JFet диференціальні пари n-канальних JFet другого типу забезпечили менші значення розкиду в порівнянні з конструкцією першого типу: ΔVGS досягає значень 5 - 20 мВ. Також для конструкції другого типу спостерігалося значно слабший вплив напруги стік-витік на ΔVGS у разі високої щільності струму. Розроблені конструкції диференціальних пар на основі p- і n-канальних JFet рекомендується використовувати при організації виробництва CBiCJFet аналогових мікросхем, в тому числі для експлуатації в умовах низьких температур.

A new notch filter (NF) circuit based on a single differential difference operational amplifier (DDA) has been developed and studied, which is characterized by reduced current consumption in the static mode. Equations are obtained for the transfer functions and parameters of the NF, which includes a low-pass filter and a Sallen-Key high-pass filter, the signals of which are summed by the DDA. Computer modeling of the NF in CAD Micro-Cap was performed.

A new high-pass filter (HPF) circuit of the second-order Sallen-Key family has been developed and studied, in which independent adjustment of the main parameters is realized -the pole frequency, the quality factor of the pole and the transmission coefficient. The basic equations for the transfer functions and HPF parameters are presented. The results of computer simulation a proposed circuits HPF in CAD Micro-Cap 12 are shown.

The generalized structure of the second-order RC filters (LPF, HPF, BPF) with independent setting of the basic parameters - pole frequency, pole Q-factor and transfer ratio is considered. From these positions, the requirements for three special transfer functions (TF) of the multipole of the frequency-setting RC circuit, which contains two resistors and two capacitors, are formulated. The type of the required filter (LPF, HPF, BPF) is implemented by selecting the coefficients of the numerator of the first TF. The coefficients of the second TF are chosen so that that they only affect the pole frequency. In this case, the choice of the parameters of the third TF provides the required pole attenuation. The stages of synthesis of the ARCFs of this class, the existence of which is confirmed by 14 patents of the Russian Federation, are considered.

This paper proposes operational amplifier’s (Op-Amps) architectures based on complementary field-effect transistors with p-n junction (CJFETs), in which the effect of channel length modulation on the systematic component of the Op-Amp’s zero offset voltage (V off ) is reduced. The peculiarity of the developed Op-Amp’s circuitry solutions is that due to the high self-adjusting symmetry of the static mode in terms of the gate-drain voltages of the dominant CJFETs, they provide a low V off level and increased values of the gain (GAIN). The computer simulation of Op-Amps in the LTSpice software (Analog Device, USA) showed that GAIN of the Op-Amps is more than 80 dB, and the systematic component of the zero offset voltage is within 30 μV in the temperature range up to -197°C. Op-Amp circuits of the proposed subclass can have low current consumption in static mode and can be performed not only on Si CJFETs, but also on the basis of wide-gap semiconductors (SiC CJFET, GaN CJFET or GaAs CJFET). Recommended applications of the developed architectures are analog interfaces of physical quantities of sensors for high-energy physics, medicine, and space instrumentation.

New structured array (SA) MH2XA020 and the way of designing nuclear electronic integrated circuits (ICs) based on it are considered. The SA MH2XA020 contains eight readout channels. Each channel includes a charge-sensitive amplifier (CSA), an amplifier-shaper (AS) with gain control and “tail” cancellation, a sampling and storage device (SSD), and a multiplexer. In the SA, it is possible to change the operating current of the input transistor, RC value in the CSA feedback loop, and the peaking time of the AS. Experimental results of eight-channel MH2XA020-01 chip implemented on the SA are presented.

The implementation of a charge-sensitive amplifier (CSA) based on the МН2ХА030 array chip (AC) with an adjustable conversion factor for processing signals of silicone photomultipliers (SPM) is considered. The developed CSA, named ADPreampl3, contains a fast and slow signal circuit (SC). The fast SC includes a transresistive amplifier-shaper with a base-level adjustment circuit, and a slow SC includes an CSA, a shaper, and a base-level restorer (BLR) circuit. The main advantage of ADPreampl3 amplifier when used in multichannel integrated circuits is the minimum number of elements used, due to the use of the same stages to perform different functions. To correctly simulate the operation of ADPreampl3, taking into account the features of the input signal source, a simplified electrical equivalent circuit of the SPM, applicable to both circuit simulation and measurements, is proposed. Circuit simulation of ADPreampl3 using the proposed equivalent circuit of SPM with a supply voltage of ±3 V, made possible to establish that: fast SC is characterized by the bandwidth up to 60 MHz and allows adjusting the base level in the range from -0.1 V to 0.2 V. Thus, it is possible to compensate the technological variation of the output voltage of the fast SC or set the required switching threshold of the comparator connected to the output of the fast SC; slow SC allows you to adjust the base level in the range from -1 V to 1 V and smoothly change the amplitude of the output signal, including phase inversion, when the control voltage changes from -1 V to 1 V; the BLR circuit provides a constant shape of the output voltage pulse with a DC input current of ADPreampl3, varying in the range of ±190 μA, and a negligible change of the base level at ±20% of the resistance variation of integrated resistors. ADPreampl3 amplifier enables the transition to the ``sleep'' mode with a decrease in current consumption up to 10 μA, maintains operability at an absorbed dose of gamma radiation up to 500 krad and the effect of the integral neutron fluence up to 1013 n/cm2 and can be used in multi-channel signal processing chips of SPM., Рассмотрена реализация на базовом матричном кристалле МН2ХА030 зарядочувствительного усилителя (ЗЧУ) с регулируемым коэффициентом преобразования, предназначенного для обработки сигналов кремниевых фотоэлектронных умножителей (SiФЭУ). Разработанный ЗЧУ, названный ADPreampl3, содержит быструю и медленную сигнальную цепь (СЦ). Быстрая СЦ включает трансрезистивный усилитель-формирователь со схемой подстройки базового уровня, а медленная СЦ - ЗЧУ, формирователь, схему восстановления базового уровня (ВБУ). Главным преимуществом усилителя ADPreampl3 при его применении в многоканальных ИС является минимальное количество используемых элементов, обусловленное применением одних и тех же каскадов для выполнения разных функций. Для корректного моделирования работы ADPreampl3 с учетом особенностей источника входного сигнала предложена упрощенная электрическая эквивалентная схема SiФЭУ, применимая как для схемотехнического моделирования, так и для измерений. Схемотехническое моделирование ADPreampl3 с использованием предложенной эквивалентной схема SiФЭУ при напряжении источников питания, равном ± 3 В, позволило установить, что: - быстрая СЦ характеризуется полосой пропускания до 60 МГц и позволяет подстраивать базовый уровень в диапазоне от -0,1 В до 0,2 В. Таким образом возможна компенсация технологического разброса выходного напряжения быстрой СЦ или установка требуемого порога переключения компаратора, подключаемого к выходу быстрой СЦ; - медленная СЦ позволяет регулировать базовый уровень в диапазоне от -1 В до 1 В и плавно изменять амплитуду выходного сигнала, включая инверсию фазы, при изменении управляющего напряжения от -1 В до 1 В; - схема ВБУ обеспечивает неизменную форму выходного импульса напряжения при постоянном входном токе ADPreampl3, изменяющемся в диапазоне ± 190 мкА, и пренебрежимо малое изменение базового уровня при ± 20 % разбросе сопротивлений интегральных резисторов. Усилитель ADPreampl3 допускает переход в "спящий" режим с уменьшением тока потребления до 10 мкА, сохраняет работоспособность при поглощенной дозе гамма-излучения до 500 крад и воздействии интегрального потока нейтронов до 1013н/см2 и может найти применение в многоканальных микросхемах обработки сигналов SiФЭУ., Розглянута реалізація на базовому матричному кристалі МН2ХА030 зарядочутливого підсилювача (ЗЧП) з регульованим коефіцієнтом перетворення, призначеного для обробки сигналів кремнієвих фотоелектронніихпомножувачів (SiФЕП). Розроблений ЗЧП, названий ADPreampl3, містить швидку і повільну сигнальне коло (СК). Швидке СК включає трансрезістівний підсилювач-формувач зі схемою підстроювання базового рівня, а повільне СК - ЗЧУ, формувач, схему відновлення базового рівня (ВБР). Головною перевагою підсилювача ADPreampl3 у разі його застосуванні в багатоканальних ІС є мінімальна кількість використовуваних елементів, що обумовлено застосуванням одних і тих же каскадів для виконання різних функцій. Для коректного моделювання роботи ADPreampl3 з урахуванням особливостей джерела вхідного сигналу запропонована спрощена електрична еквівалентна схема SiФЕП, що використовується як для схемотехнічного моделювання, так і для вимірювань. Схемотехнічне моделювання ADPreampl3 з використанням запропонованої еквівалентної схема SiФЕП у разі, якщо напруга джерела живлення дорівнює ± 3 В, дозволило встановити, що: - швидке СК характеризується пропускною здатністю до 60 МГц і дозволяє підлаштовувати базовий рівень в діапазоні від -0,1 В до 0,2 В. Таким чином можлива компенсація технологічного розкиду вихідної напруги швидкого СК або установки необхідного порогу перемикання компаратора, що підключається до виходу швидкого СК ; - повільне СК дозволяє регулювати базовий рівень в діапазоні від -1 В до 1 В і плавно змінювати амплітуду вихідного сигналу, включаючи інверсію фази, у разі зміни керуючої напруги від -1 В до 1 В; - схема ВБП забезпечує незмінну форму вихідного імпульсу напруги при постійному вхідному струмі ADPreampl3, що змінюється в діапазоні ± 190 мкА, і не впливає мала зміна базового рівня у разі відхилення значень опорів інтегральних резисторів ± 20%. Підсилювач ADPreampl3 допускає перехід в "сплячий" режим зі зменшенням струму споживання до 10 мкА, зберігає працездатність під час поглинення дози гамма-випромінювання до 500 крад і впливі інтегрального потоку нейтронів до 1013 н/см2 і може знайти застосування в багатоканальних мікросхемах обробки сигналів SiФЕП.

The main designs of low-sensitivity multiloop active RC filters (ARCFs) based on micropower operational amplifiers (OAs) for preliminary sensor signal processing in microelectronic measuring systems with analog-to-digital converters are discussed. Thirteen modifications of the integrators included in the active RC filter structure are presented and classified. The equations for their transfer functions, which take into account the effect of the integrator topology and the amplification area of micropower OAs, are obtained. As an example, the frequency responses of three universal low-sensitivity ARCF circuits for implementing bandpass, high-pass, and low-pass filters are compared. It is shown by computer simulation that the investigated ARCFs based on identical micropower OAs differ from each other in the effect of the amplification areas of the OAs on the implemented frequency responses.

A new circuit of a fourth-order band-pass RC-filter (BPF) which provides independent adjustment of the main parameters is investigated: the irregularity of frequency characteristic (FC), the bandwidth and the scale transfer coefficient. An algorithm for choosing the circuit parameters to achieve a given accuracy of digital potentiometers is described. The transfer functions of the developed BPF are presented and the frequency response obtained as a result of computer simulation in CAD Micro-Cap is shown.

The new circuit of fourth-order band-pass filter (BPF) has been developed with independently adjustable parameters - non-uniformity of the amplitude-frequency characteristic (AFC), bandwidth and transmission scale factor. The basic mathematical expressions for transfer function coefficients of the BPF structure and their parameters of AFC are presented. The AFCs was show from program Micro-Cap.

Actual problems of diagnosing digital devices, including functional verification, check of separate blocks of the project and hardware testing are considered. Various modern standards on the way of automatic design, digital the boundary-scan standard for testing multilayer printed circuit boards are separately considered. On the basis of the analysis of the existing issues in a route of design of digital devices the solution of the problem of testing taking into account specifics of the applied element base is developed.

We present a study of the normalized transverse momentum distribution of W bosons produced in p (p) over bar collisions, using data corresponding to an integrated luminosity of 4.35 fb(-1) collecte ...

We describe an analysis comparing the pp[over ¯] elastic cross section as measured by the D0 Collaboration at a center-of-mass energy of 1.96 TeV to that in pp collisions as measured by the TOTEM Collaboration at 2.76, 7, 8, and 13 TeV using a model-independent approach. The TOTEM cross sections, extrapolated to a center-of-mass energy of sqrt[s]=1.96 TeV, are compared with the D0 measurement in the region of the diffractive minimum and the second maximum of the pp cross section. The two data sets disagree at the 3.4σ level and thus provide evidence for the t-channel exchange of a colorless, C-odd gluonic compound, also known as the odderon. We combine these results with a TOTEM analysis of the same C-odd exchange based on the total cross section and the ratio of the real to imaginary parts of the forward elastic strong interaction scattering amplitude in pp scattering for which the significance is between 3.4σ and 4.6σ. The combined significance is larger than 5σ and is interpreted as the first observation of the exchange of a colorless, C-odd gluonic compound.

Two modifications of the second-order multifunctional active filters (ARCF) with a minimum number of passive and active elements have been developed. The proposed ARCF circuits are implemented on differential difference operational amplifiers and have extended frequency range. The basic equations and the results of computer simulation are presented, showing that the first circuit implements realize rejected filter (RF), band-pass filter (BPF) and low-pass filter (LPF), the second circuit implements - high-pass filter (HPF), BPF and LPF.

In the article, using the well-known provisions of the sampling theorem and Bernstein inequality, the maximum dynamic error of the digital interface is estimated when analog sensor signals are input in standard control and monitor systems (CMS). It is shown that for the case when the input module polls the sensor primary transducer (PT) having a finite spectrum with an extremely low frequency determined by the sampling theorem, the dynamic error is 157%. To reduce this error to acceptable values, it is necessary either to increase the sampling frequency (i.e., the rpm of the interface bus with the exchange protocol) by a factor of hundreds and thousands of times compared to the sampling frequency calculated by the sampling theorem, or reduce the operating speed of the CMS by a factor of hundreds and thousands of times.

The circuit simulation results of the charge-sensitive amplifiers (CSA) with various types of input field-effect transistors (FET) are considered. CSA-1 and CSA-2 are implemented on Si bipolar transistors, besides in CSA-1 the input transistor is a Si field-effect transistor with p-n junction (Junction Field Effect Transistor, JFET) and in CSA-2 - a GaAs FET with a gate formed by Schottky contact (metalized semiconductor FET, MESFET). CSA-3 is developed completely on the GaAs MESFET. In order to adequately compare the CSAs with respect to the rise-time τ of the output pulses and the equivalent noise charge (ENC), all input transistors were selected with approximately equal drain current and the ratio of the gate width to the length W/L. The electrical circuits of the CSAs, the simulation results of the operating mode, the critical parameters, the dependence of τ and the ENC on the capacity of the input signal source C D are presented.

A circuit of a binary threshold current RS-flip-flop capable of working with direct and inverse inputs is developed. The peculiarity of this circuit is that to switch from a structure with direct inputs to a second structure with inverse inputs, it is sufficient to change only the reference currents of two current sources. The truth tables for two cases and their results of computer simulation are given. The proposed RS-flip-flop is recommended for use in automation devices and digital technologies in the energy sector, which will increase the speed of information processing systems for measuring the temperature of GTE gases and create a current element base of computing devices operating on the principles of linear algebra.

Two promising modifications of the multi-functional programmable active filters (PAF) are developed and investigated. The proposed PAF circuits of second order are implemented on the operational amplifiers and have an increased stability of the Q-factor. The basic equations and the results of computer simulation are presented, showing that the developed circuits implement band-pass filters (BPF), low-pass filters (LPF) and high-pass filters (HPF). New modifications of the PAFs allow resetting of the pole frequency using resistor arrays R-2R or digital potentiometer microcircuits. A comparison of the main characteristics of the proposed PAF and the PAF based on famous KHN filters is given.

A new architecture of the compensating voltage regulator (CVR) without current mirrors is presented, which can be implemented on the single-type silicon (Si), silicon carbide (SiC) or gallium arsenide (GaAs) JFETs. The use of Si, SiC and GaAs technologies makes it possible to ensure reliable operation of the CVR in severe operating conditions at a low noise level. The computer simulation results show that the proposed Si JFET CVR performs (due to new circuitry) its main functions in the cryogenic temperature range and it is characterized by the resistance to the penetrating radiation.

The structure of the CJFET composite transistor (CT) for JFET technologies (Si, SiC, GaN, GaAs, etc.) is proposed, which in its drain-gate characteristics is similar to a CMOS junction field-effect transistor with an induced channel. The structure of the CJFET CT under consideration has a typical off state zone with a gate-source voltage not exceeding its threshold voltage. When the voltage increases at the equivalent gate, the CT switches to the active mode and can be used in tasks of analog signal amplification. Besides, with respect to the equivalent drain terminal of the CT, the signal is not inverted in the proposed CT. This is its wonderful feature. The main connection silicon circuits of the CT in cryogenic electronics are considered.

The offset voltage (V off ) of the BJT and CMOS two-stage operational amplifiers (Op-Amps) substantially depends on the numerical values (differences from unit) from the current ratio (K i ≈1) of the current mirrors (CM). The CM parameter is also influenced by the Early voltage of their dominant active components. For the JFET technologies (Si, SiC, GaAs and others) with a low noise level, there are no high-quality CMs of this class today, or their construction (at K i =1) is associated with a significant deterioration of other parameters of the Op-Amp. Nowadays, the current JFET mirrors are the weakest link in modern JFET analog circuitry and it is impractical to use them in the structure of the JFET Op-Amps. For the first time the article poses and solves the problem of determining the conditions for exclusion of the CMs in the JFET Op-Amp for the case when it is necessary to obtain a small V off . It is shown that for this, three identical reference current sources should be used, which are implemented on the JFET transistors and the local negative feedback resistors. The V off of the Op-Amps with the classical and proposed architectures are compared. The computer simulation results of the offset voltage (V off ) in the LTspice environment are presented, which show that silicon JFet direct coupled Op-Amps without CM have a systematic component of V off at the level of tens to hundreds of microvolts and voltage gain of more than 80 dB in a wide temperature range.

The architecture of the CJFET dual differential input stage (DDS) architecture is available for converting differential output sensor signals. DDS is proposed, in which the circuitry solutions are available. They provide the increase of the CMRR, including in severe application (low temperatures, radiation). It is shown that due to the special construction of the output current adder in the considered DDS, the transconductance of the input common-mode signal is significantly reduced to the output DSS. The versions of practical circuits of CJFET dual differential input stages based on current mirrors and "folded" cascodes with the increased CMRR and the results of their computer simulation at cryogenic temperatures in LTspice simulation software on CJFET models are presented. The proposed DDSs are recommended to be used in the structure of low-noise analog interfaces of sensors of various physical quantities applied in medicine, high-energy physics, and space instrument engineering.

The current-voltage curves (CVCs) of silicon p-JFET and n-JFET, measured in the range of drain currents of about 60 dB, are considered. To describe the CVCs of the JFET in micromode, that is for the drain currents less than 1 μA, it is proposed to use the Shichman-Hodges model built into Spice-like programs with a set of parameters identified in the micromode. The modeling results and measurement data of the CVCs in the micromode is shown, as well as the simulation results at temperatures up to minus 197°С and on exposure to neutron fluence are presented. The adequacy of the p-JFET models is set accurate for the design of analog circuits. It was difficult to separate the linear area from the saturation area at the output CVC in a circuit with a common n-JFET source at drain currents less than 1 μA. To solve the problem with this CVC, we revealed the greatest discrepancy between measurements and modeling. Therefore, it is permissible to use the identified parameters of the n-JFET model only for evaluative modeling of microcircuits in the micro mode.

The static maximum relative error of the ADC for sensors is determined by the value of its least significant bit. During the input signal conversion in the ADC the information delay causes the dynamic error, which is added to the static error and actually reduces the effective number of bits. This decrease can be estimated by the effective number of bits, which illustrates the qualitative and quantitative assessment of the additional error. The article demonstrates that the effective bits rate is defined by the delay period of information in the ADC, as well as the sampling rate of the input signal. This, in turn, requires setting the spectrographic density (SD) for the converted signal, as well as an algorithm for selecting the sampling rate. It is recommended that the delay time of the ADC includes the delay in the analog storage and amplitude multiplexer, which are located at the ADC input and are directly involved in the conversion process. The article draws attention to the fact that the real sampling rate of analog signals, chosen from the point of view of the straight task of errors distribution in the automatic control system, significantly exceeds the sampling rate according to the sampling theorem. This requires the correction of the obtained results using the sampling theorem, in the direction of reduction of effective number of bits.

Nowadays, it is urgent to develop a new generation of active RC filters, which allow for independent tuning of the critical parameters. This makes it easier to build new devices. The paper considers the generalized architecture of a new population of active RC band-pass filters (ARCFs) in which the independent adjustment of the critical parameters in the pass band is possible. As an example the equations for the transfer functions and their coefficients for two new ARCF modifications are given, which allow for the parametric synthesis of the definite design solutions. The results of modeling in the Micro-CAP program are discussed, confirming the advantages of the ARCFs of the considered family.

New low-pass filter (LPF) architectures based on differential difference operational amplifiers (DDOA) are studied in this paper. The feature of the proposed LPF is that when tuning the cut-off frequency, the LPF gain remains unchanged at zero frequency. As a tuning element, it is possible to use digital potentiometers. The basic equations for two LPF modifications are presented, which provide parametric synthesis of circuits. The results of computer simulation of tunable responses were given in Micro-cap CAD.

The volt-ampere characteristics (VAC) at temperatures from minus 197 ° C to 30 ° C of n-JFET and p- JFET, manufactured at JSC "SPE "Pulsar" using a complementary bipolar technological route, are considered. Features of the VACs are described and the obtained temperature approximations of the main parameters are given. We have compared the JFET's VACs manufactured at JSC "SPE "Pulsar" and JSC "Integral".

The circuit solutions that provide increase of common-mode rejection ratio (CMRR) and power-supply noises rejection ratio (PSRR) on a basic parameters of input "floating" complementary differential stage (FCDS) are proposed in the article. This subclass of differential stages is different by low noise level, high radiation hardness and ability of work at low temperatures through the use of junction field- effect transistors. The modified FCDS circuit simulating with CJFET transistors models, consider influence of cryogenic temperatures in LTspice simulation software results are showed. They show that CMRR and PSRR are improved by 2-3 orders of magnitude.