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Future research in High Energy Cosmic Ray Physics concerns fundamental questions on their origin, acceleration mechanism, and composition. Unambiguous measurements of the energy spectra and of the composition of cosmic rays at the “knee” region could provide some of the answers to the above questions. Only ground based observations, which rely on sophisticated models describing high energy interactions in the earth׳s atmosphere, have been possible so far due to the extremely low particle rates at these energies. A calorimeter based space experiment can provide not only flux measurements but also energy spectra and particle identification, especially when coupled to a dE/dx measuring detector, and thus overcome some of the limitations plaguing ground based experiments. For this to be possible very large acceptances are needed if enough statistic is to be collected in a reasonable time. This contrasts with the lightness and compactness requirements for space based experiments. A novel idea in calorimetry is discussed here which addresses these issues while limiting the mass and volume of the detector. In fact a small prototype is currently being built and tested with ions. In this paper the results obtained will be presented in light of the simulations performed.

Future space experiments dedicated to the observation of high-energy gamma and cosmic rays will increasingly rely on a highly performing calorimetry apparatus, and their physics performance will be primarily determined by the geometrical dimensions and the energy resolution of the calorimeter deployed. Thus it is extremely important to optimize its geometrical acceptance, the granularity, and its absorption depth for the measurement of the particle energy with respect to the total mass of the apparatus which is the most important constraint for a space launch. The proposed design tries to satisfy these criteria while staying within a total mass budget of about 1.6 tons. Calocube is a homogeneous calorimeter instrumented with Cesium iodide (CsI) crystals, whose geometry is cubic and isotropic, so as to detect particles arriving from every direction in space, thus maximizing the acceptance, granularity is obtained by filling the cubic volume with small cubic CsI crystals. The total radiation length in any direction is more than adequate for optimal electromagnetic particle identification and energy measurement, whilst the interaction length is at least suficient to allow a precise reconstruction of hadronic showers. Optimal values for the size of the crystals and spacing among them have been studied. The design forms the basis of a three-year R&D; activity which has been approved and financed by INFN. An overall description of the system, as well as results from preliminary tests on particle beams will be described.

The direct observation of high-energy cosmic rays, up to the PeV region, will increasingly rely on highly performing calorimeters, and the physics performance will be primarily determined by their geometrical acceptance and energy resolution. Thus, it is extremely important to optimize their geometrical design, granularity, and absorption depth, with respect to the total mass of the apparatus, which is among the most important constraints for a space mission. Calocube is a homogeneous calorimeter whose basic geometry is cubic and isotropic, so as to detect particles arriving from every direction in space, thus maximizing the acceptance; granularity is obtained by filling the cubic volume with small cubic scintillating crystals. This design forms the basis of a three-year R & D activity which has been approved and financed by INFN. A comparative study of different scintillating materials has been performed. Optimal values for the size of the crystals and spacing among them have been studied. Different geometries, besides the cubic one, and the possibility to implement dual-readout techniques have been investigated. A prototype, instrumented with CsI(Tl) cubic crystals, has been constructed and tested with particle beams. An overview of the obtained results will be presented and the perspectives for future space experiments will be discussed.

CaloCube is an R&D project borne to develop a novel calorimeter design, optimized for high-energy cosmic ray measurements in space. A small prototype made of CsI(Tl) elements has been built and tested on particle beams. A final version, made of 5×5×18 crystals and with dual readout (two photodiodes for each crystal), to cover the full required dynamic range, is under construction and will be tested at CERN SPS in Summer 2016. The dual readout compensation technique were developed and the feasibility to extract ÄŒ erenkov signals from CsI crystals verified.

The direct measurement of the cosmic-ray spectrum, up to the knee region, is one of the instrumental challenges for next generation space experiments. The main issue for these measurements is a steeply falling spectrum with increasing energy, so the physics performance of the space calorimeters are primarily determined by their geometrical acceptance and energy resolution. CaloCube is a three-year R&D; project, approved and financed by INFN in 2014, aiming to optimize the design of a space-born calorimeter. The peculiarity of the design of CaloCube is its capability of detecting particles coming from any direction, and not only those on its upper surface. To ensure that the quality of the measurement does not depend on the arrival direction of the particles, the calorimeter will be designed as homogeneous and isotropic as possible. In addition, to achieve a high discrimination power for hadrons and nuclei with respect to electrons, the sensitive elements of the calorimeter need to have a fine 3-D sampling capability. In order to optimize the detector performances with respect to the total mass of the apparatus, which is the most important constraint for a space launch, a comparative study of different scintillating materials has been performed using detailed Monte Carlo simulation based on the FLUKA package. In parallel to simulation studies, a prototype consisting in 14 layers of 3 x 3 CsI(Tl) crystals per layer has been assembled and tested with particle beams. An overview of the obtained results during the first two years of the project will be presented and the future of the detector will be discussed too.

The structural, optical and electrical properties of sputtered cuprous oxide thin films have been optimized through post-deposition thermal treatments. Moreover we have studied the effects of nitrogen doping introduced by ion implantation followed by the optimized oxidant thermal annealing. Three concentrations have been used, 0.6 N%, 1.2 N%, and 2.5 N%. Along with the preservation of the Cu 2 O phase, a slight optical band gap narrowing and a significant conductivity enhancement has been observed with respect to the undoped samples. These results can be justified by the absence of further oxygen vacancies promoted by dopant introduction and by the substitution of O atoms by N ones. This lattice configuration has been guaranteed by the post implantation annealing in oxidant atmosphere. The used doping technique represents an original out-of-equilibrium approach toward the formation of low-resistivity contacts on Cu 2 O films for photovoltaic applications.

In the present article we report enhanced light absorption, tunable size-dependent blue shift, and efficient electron hole pairs generation in Ge nanoporous films (np-Ge) grown on Si. The Ge films are grown by sputtering and molecular beam epitaxy; subsequently, the nanoporous structure is obtained by Ge+ self-implantation. We show, by surface photovoltage spectroscopy measurements, blue shift of the optical energy gap and strong signal enhancement effects in the np-Ge films. The blue shift is related to quantum confinement effects at the wall separating the pore in the structure, the signal enhancement to multiple light-scattering events, which result in enhanced absorption. All these characteristics are highly stable with time. These findings demonstrate that nanoporous Ge films can be very promising for photovoltaic applications.

In this work, we investigate the spectral response of metal-oxide- semiconductor photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO2) matrix. The role of Ge NC size and density on the spectral response was evaluated by comparing the performance of PDs based on either densely packed arrays of 2 nm-diameter NCs or a more sparse array of 8 nm-diameter Ge NCs. Our Ge NC photodetectors exhibit a high spectral responsivity in the 500-1000 nm range with internal quantum efficiency of ~ 700% at - 10 V, and with NC array parameters such as NC density and size playing a crucial role in the photoconductive gain and response time. We find that the configuration with a more dispersed array of NCs ensures a faster photoresponse, due to the larger fraction of electrically-active NCs and the partial suppression of recombination centers. The photoconduction mechanism, assisted by trapping of photo-generated holes in Ge NCs, is discussed for different excitation power and applied bias conditions. Our results provide guidelines for further optimization of high-efficiency Ge NC photodetectors. © 2013 Elsevier B.V. All rights reserved.

In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%. © 2013 Cosentino et al.

We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American Institute of Physics.

We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.

We report on high responsivity, broadband metal/insulator/semiconductor photodetectors with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon dioxide matrix. Spectral responsivities between 1-4 A/W are achieved in the 500-900 nm wavelength range with internal quantum efficiencies (IQEs) as high as ∼700%. We investigate the role of a-Ge QDs in the photocurrent generation and explain the high IQE as a result of transport mechanisms via photoexcited QDs. These results suggest that a-Ge QDs are promising for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget. © 2011 American Institute of Physics.

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.

The photon absorption in Si quantum dots (QDs) embedded in SiO2 has been systematically investigated by varying several parameters of the QD synthesis. Plasma-enhanced chemical vapor deposition (PECVD) or magnetron cosputtering (MS) have been used to deposit, upon quartz substrates, single layer, or multilayer structures of Si-rich- SiO2 (SRO) with different Si content (43-46 at. %). SRO samples have been annealed for 1 h in the 450-1250 °C range and characterized by optical absorption measurements, photoluminescence analysis, Rutherford backscattering spectrometry and x-ray Photoelectron Spectroscopy. After annealing up to 900 °C SRO films grown by MS show a higher absorption coefficient and a lower optical bandgap (∼2.0 eV) in comparison with that of PECVD samples, due to the lower density of Si-Si bonds and to the presence of nitrogen in PECVD materials. By increasing the Si content a reduction in the optical bandgap has been recorded, pointing out the role of Si-Si bonds density in the absorption process in small amorphous Si QDs. Both the photon absorption probability and energy threshold in amorphous Si QDs are higher than in bulk amorphous Si, evidencing a quantum confinement effect. For temperatures higher than 900 °C both the materials show an increase in the optical bandgap due to the amorphous-crystalline transition of the Si QDs. Fixed the SRO stoichiometry, no difference in the optical bandgap trend of multilayer or single layer structures is evidenced. These data can be profitably used to better implement Si QDs for future PV technologies. © 2009 American Institute of Physics.

In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomitant disappearance of the 900-nm emission. This suggests that under electrical pumping Er is excited through an efficient energy transfer from the silicon clusters which hence become dark. We have identified an Auger de-excitation of Er with trapped carriers as the main process competing with radiative emission and limiting EL efficiency. This process is particularly severe in presence of unbalanced carrier injection (electrons versus holes) and can be controlled in properly designed structures. These data are presented and their implications are discussed. © 2006 IEEE.