101. Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices
- Author
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Zhang, Minhao, Wang, Huaiqiang, Mu, Kejun, Wang, Pengdong, Niu, Wei, Zhang, Shuai, Xiao, Guiling, Chen, Yequan, Tong, Tong, Fu, Dongzhi, Wang, Xuefeng, Zhang, Haijun, Song, Fengqi, Miao, Feng, Sun, Zhe, Xia, Zhengcai, Wang, Xinran, Xu, Yongbing, Wang, Baigeng, Xing, Dingyu, and Zhang, Rong
- Subjects
Physics - Applied Physics ,Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Materials Science - Abstract
We report the study of a tri-axial vector magnetoresistance (MR) in nonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%: -1%: 225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications, for example, vector magnetic sensors., Comment: 23 pages, 12 figures
- Published
- 2018
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