436 results on '"Meyer, B.K."'
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102. ZnS1–x O x : energy gaps, bowing parameter
103. ZnS1–x O x : lattice constant, phonon frequencies
104. Zn1–x Cd x O: band offsets
105. Mg x Zn1–x O, hexagonal modification: effective-mass parameters
106. Mg x Zn1–x O, hexagonal modification: energy gaps
107. Zn1–x Cd x O: lattice constants
108. Mg x Zn1–x O, cubic modification: energy gaps
109. Mg x Zn1–x O, hexagonal modification: lattice parameters, phonon wavenumbers
110. Be x Zn1−x O: energy gaps
111. Zn1–x Cd x O: reflectance, absorption and photoluminescence
112. Synthesis and Characterization of Copper Oxide Compounds
113. Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer
114. Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC
115. Photoconductivity Study of Sputter-Deposited Cu2O Films
116. Anionic and cationic substitution in ZnO
117. Photonic properties of ZnO epilayers
118. RF reactive sputter deposition and characterization of transparent CuAlO 2 thin films
119. Electron paramagnetic resonance study of copper impurity charge-states in PbWO4 scintillator
120. Quasi-epitaxial growth of thick CuInS2 films by RF reactive sputtering with a thin epilayer buffer
121. Identification of bound exciton complexes in ZnO
122. Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer
123. Preparation and characterization of highly (112)-oriented CuInS2 films deposited by a one-stage RF reactive sputtering process
124. Influence of the preparation conditions on the properties of CuInS2 films deposited by one-stage RF reactive sputtering
125. Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma
126. Photocurrent measurements of MgZn1−O epitaxial layers of different x.
127. Photonic properties of ZnO epilayers.
128. Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO
129. Structural and optical characterization of RF reactively sputtered CuInS2 thin films
130. Theory of the Zeeman effect in semiconductor nanocrystals
131. Tungsten and fluorine co-doping of VO2 films
132. Effect of the (OH) Surface Capping on ZnO Quantum Dots
133. Microscopic Analysis of High Quality Thick ZnO CVD Layers: Imaging of Growth Domains, Strain Relaxation, and Impurity Incorporation
134. Heteroepitaxy of ZnO on GaN Templates
135. Determination of the electron effective-mass tensor in 4H SiC
136. Photoconductivity Studies of Al0.18Ga0.82N/GaN Single Heterostructure
137. Hall effect and surface characterization of Cu2S and CuS films deposited by RF reactive sputtering
138. Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy
139. Effects of Substrate Pretreatment and Buffer Layers on GaN Epilayers Grown by Hydride Vapor Phase Epitaxy
140. Green emitting molybdate complexes in PbWO4—results of an ODMR study
141. The role of defect states in the creation of intrinsic (WO4)3− centers in PbWO4 by sub-bandgap excitation
142. The Oxygen Vacancy as the Origin of a Green Emission in Undoped ZnO
143. Subbandgap absorption from photocurrent spectra in Al0.18GaN/GaN heterostructures
144. Effect of ultrasound treatment on CuInSe2 solar cells
145. The Red (1.8 eV) Luminescence in Epitaxially Grown GaN
146. Giant internal magnetic fields in Mn doped nanocrystal quantum dots
147. Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
148. Annealing studies on CuIn(Ga)Se 2 : the influence of gallium
149. Investigation of post-growth Cu-diffusion in In-rich CuInSe 2 films
150. Defects and defect identification in group III-nitrides
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