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372 results on '"Messier, R."'

101. Current issues and problems in the chemical vapor deposition of diamond.

Author

Yarbrough, W.A. and Messier, R.

Subjects
*DIAMONDS
Abstract

Discusses current issues and problems in the chemical vapor deposition (CVD) of diamond. Characterization; Nucleation on foreign surfaces; Formation in preference to other phases of solid carbon; Morphologies and crystallographic orientations; Coating descriptions; Inconsistent experimental results.

Published
1990
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113. Incommensurate Numbers, Continued Fractions, and Fractal Immittances

Author

Lakhtakia, A., Messier, R., Varadan, V. V., and Varadan, V. K.

Abstract

Continued fractions have a rich tradition in the theory of numbers; e.g., non-terminating con­ tinued fractions represent irrational numbers. It will be shown that a class of continued fractions possess the property of self-referential decomposition, and their interpretation in the form of non-terminating ladder circuits gives rise to fractal immittances with potential analogies to rough surfaces, thin cermet films, as well as to the internal void network structure of thick films.

Published
1988
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114. Space-charge-limited current in thin-film diamond.

Author

Ashok, S., Srikanth, K., Badzian, A., Badzian, T., and Messier, R.

Subjects
THIN films, DIAMONDS, CHEMICAL vapor deposition
Abstract

The electrical conduction in thin-film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×1020 cm-3 eV-1 has been deduced from the current-voltage-temperature data. [ABSTRACT FROM AUTHOR]

Published
1987
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115. Thickness-dependent void fraction of rf-sputtered amorphous Ge films by spectroscopic ellipsometry.

Author

McMarr, P. J., Blanco, J. R., Vedam, K., Messier, R., and Pilione, L.

Subjects
THIN films, PHYSICS
Abstract

In this letter it is shown that vapor deposited thin films prepared under conditions of low adatom mobility, such as amorphous Ge films in the present study, exhibit a nonlinear decrease in void fraction, and hence an increase in density with increasing film thickness. Fractal modeling of the internal void network structure in this class of vapor deposited films shows that the void boundaries define the surfaces of growth cones and these voids are, in general, not expected to be distributed uniformly with film thickness. [ABSTRACT FROM AUTHOR]

Published
1986
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117. Low-temperature diamond deposition by microwave plasma-enhanced chemical vapor deposition.

Author

Liou, Y., Inspektor, A., Weimer, R., and Messier, R.

Subjects
THIN films, CHEMICAL vapor deposition, RAMAN spectroscopy
Abstract

Thin diamond films were deposited on silicon, MgO, fused silica, and soda lime silica glass at low temperature (the lowest temperature ∼365 °C) by microwave plasma-enhanced chemical vapor deposition. The films were identified as diamond by Raman spectroscopy. A Raman peak shift of several wave numbers to either lower or higher wave numbers due to the strain of the film is also observed. The film deposited on glass is highly transparent. The fine faceted crystals in the film are shown in scanning electron microscope micrographs. [ABSTRACT FROM AUTHOR]

Published
1989
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118. Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films.

Author

Gildenblat, G. Sh., Grot, S. A., Wronski, C. R., Badzian, A. R., Badzian, T., and Messier, R.

Subjects
SCHOTTKY barrier diodes, THIN films, MICROWAVE plasmas, CHEMICAL vapor deposition
Abstract

Schottky diodes were fabricated using gold and aluminum contacts to thin diamond films obtained by a microwave plasma assisted chemical vapor deposition process. The current-voltage and capacitance-voltage-frequency characteristics of these devices are similar to those fabricated on a crystalline diamond base formed by traditional ultrahigh pressure process. [ABSTRACT FROM AUTHOR]

Published
1988
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119. Microstructure-Property Relations in Sputtered Films

Author

PENNSYLVANIA STATE UNIV UNIVERSITY PARK MATERIALS RESEARCH LAB, Messier,R., PENNSYLVANIA STATE UNIV UNIVERSITY PARK MATERIALS RESEARCH LAB, and Messier,R.

Abstract

The mechanical and chemical properties of thin films depend at least in part on their microstructure. A structure zone model common to all vapor deposition methods has been developed to classify the various physical microstructures found., This article is from 'Proceedings of the DARPA (Defense Advanced Research Projects Agency) Workshop on Diamond-Like Carbon Coatings, held at Albuquerque, New Mexico on April 19-20, 1982,' AD-A136 766, p224-243.

Published
1982

120. Safety Eye Protection through Use of Fast Acting Optical Switching.

Author

PENNSYLVANIA STATE UNIV UNIVERSITY PARK MATERIALS RESEARCH LAB, Messier,R, Newnham,R E, PENNSYLVANIA STATE UNIV UNIVERSITY PARK MATERIALS RESEARCH LAB, Messier,R, and Newnham,R E

Abstract

Due to the increasing use of lasers in military applications, along with their high power levels and short pulse times, there is a critical need for fast acting optical switches to protect the vision of personnel. Such devices must be economical, suitable for use either in optical components (eg. binoculars and windshields) or in eye glasses or goggles, be responsive to laser energies from the UV to the near IR, and not impair the performance of the personnel in their mission. At present there are no materials/systems which fulfill these requirements. As a first step in developing new materials and materials related devices which are capable of switching from optical densities of less than 1 to greater than about 5 in times of a microsecond or less a critical review was undertaken. The main findings of this study are that there are four materials types which have potential for improved fast acting optical switches: (1) ferroelectric liquid crystals; (2) organometallic films containing charge transfer complexes, which undergo field-induced redox reaction, (3) inorganic electrochromic films which undergo insulator-semiconductor or insulator-metal transitions due to short range diffusion; and (4) inhomogeneous media in which the inhomegeneity is on the order to the wavelength of visible light.

Published
1984

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