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We present a cooler-less, free-running 1550 nm vertical cavity surface emitting laser (VCSEL) directly modulated at 10.7 Gb/s. We also report on error-free transmission through 40 km of standard single-mode optical fiber, achieved without the use of dispersion-mitigation or mid-span amplification. Inverse-dispersion fiber was utilized to realize a dispersion-matched 99.7 km optical access uplink supporting error-free transmission with 27 dB loss margin. These results indicate the feasibility of implementing cooler-less long-wavelength VCSEL devices in long-reach optical access networks.

We report on the successful application of recently developed 2.3 microm InP-based vertical-cavity surface-emitting lasers with a buried tunnel junction in a wavelength modulation spectroscopy measurement for carbon monoxide (CO) detection. The electrically pumped devices operate at room temperature under cw operation with stable single-mode emission and should allow for parts in 10(6) (ppm) level resolution measurement of CO with a standard optical setup.

High speed 1.3 µm vertical-cavity surface-emitting lasers for optical interconnects are presented. Error-free transmission over 3 km of standard singlemode fibre at data rates as high as 12.5 Gbit/s is demonstrated for the first time.

A record resonance frequency of 28 GHz and an intrinsic laser 3 dB bandwidth of 34 GHz is reported for a directly modulated injection-locked 1.55 /spl mu/m VCSEL. The small-signal modulation response is experimentally investigated using polarisation-maintaining components.

Spectral linewidth measurements of 1.55 µm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.

Continuous-wave operation of an electrically pumped vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 2.01 µm employing a heavily strained active region is reported.

High-performance lnGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) at 1.55 /spl mu/m, are demonstrated with superior output characteristics and modulation bandwidths up to 10 Gbit/s.

Improved 1.55 µm InGaAlAs/InP vertical-cavity surface-emitting lasers were fabricated in the buried tunnel junction technology yielding sub-mA threshold currents, 0.9 V threshold voltage, 10–40 Ω series resistance, output power up to 7 mW (20°C, CW) and CW operation up to > 110°C.

A new method is proposed for a significant reduction of series resistance and device heating in long wavelength vertical-cavity surface-emitting lasers (VCSELs) based on InP. Our technique involves a twofold epitaxial growth with a buried low-resistance (3×10-6 Ωcm2) tunnel junction. The substitution of high-resistive p-type confining layers by low-resistive n-type material results in total resistances smaller 100 Ω even for the case of non-conducting dielectric mirrors. With the application of buried tunnel junctions in a VCSEL-structure, we could demonstrate small electrical series resistance (U < 1 V at 3 kAcm-2) and effective current confinement simultaneously. Furthermore, because of the laterally varying cavity length, an effective lateral waveguiding effect occurs.

A novel concept for long-wavelength InP-based vertical cavity lasers (VCSELs) with a buried tunnel junction enables effective electrical and optical confinement and yields low series resistance. VCSELs with aperture diameters of 13 /spl mu/m exhibit threshold currents of 10 mA, single-mode emission, a quantum efficiency of 10% and a threshold voltage of only 1.2 V.

A 1.5 µm vertical-cavity surface-emitting laser operating with high efficiency under continous wave conditions at room temperature is demonstrated with threshold current and voltage below 1 mA and 1 V, respectively. The singlemode emission spectrum exhibits stable linear polarisation with a sidemode suppression ratio of 30 dB.

The buried tunnel junction (BTJ) technique has successfully been used to realise the first electrically pumped 1.83 /spl mu/m vertical-cavity surface-emitting lasers. Excellent CW performance with submilliamp threshold currents, differential quantum efficiencies up to 26% and single-mode operation has been achieved.

We report direct modulation of a widely tunable surface micromachined MEMS VCSEL. The MEMS is electro-thermally actuated for tuning the emission wavelength over 60 nm with a center wavelength of 1554 nm. Error-free transmission is achieved at 10 Gbit/s for 47 nm tuning range.

We demonstrate up to 12 km, 56 Gb/s DMT transmission using high-speed VCSELs in the 1.5 um wavelength range for future 400Gb/s intra-data center connects, enabled by vestigial sideband filtering of the transmit signal., Comment: The results were obtained in the framework of the SASER-ADVAntage-NET and SpeeD projects, partly funded by the German ministry of education and research (BMBF) under contracts 16BP12400 and 13N13744, and by the European Commission in the Marie Curie project ABACUS

With the buried tunnel junctions technology a breakthrough in the dynamic and stationary losing performance has been achieved for long-wavelength InP-based VCSELs making these lasers ideally suited for broadband communications and gas sensing applications.

A high-speed VCSEL is characterized and directly modulated up to 40Gbps with power consumption ∼14mW. BER performance exhibits error-free operation(