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Alloying in 2D materials plays a more and more important role due to wide range bandgap tunability and integrating the advantages of HER and OER. Here, the novel bilayers of SnO/BiOX (X= Cl, Br and I) bilayer are constructed to integrate the advantages of narrow bandgap and separating photo-generated carriers. The bandgap of the bilayers can be tuned from 1.09 to 1.84 eV, remarkably improving the utilization of solar energy. The large difference in effective masses and built-in electric field effectively hamper the fast recombination of photo-generated carries, which highly enhances the photocatalytic efficiency. Besides that, the type-II band alignment guarantee the two half reactions could occur at different surfaces. Moreover, the optical absorption (the strong transition between band edges and high joint density of states) and band-edge level further confirm the SnO/BiOX (X= Cl and Br) bilayer is a promising candidate for overall water-splitting.

The 3D topological insulator (TI) PN junction under magnetic fields presents a novel transport property which is investigated both theoretically and numerically in this paper. Transport in this device can be tuned by the axial magnetic field. Specifically, the scattering coefficients between incoming and outgoing modes oscillate with axial magnetic flux at the harmonic form. In the condition of horizontal mirror symmetry, the initial phase of the harmonic oscillation is dependent on the parities of incoming and outgoing modes. This symmetry is broken when a vertical bias is applied which leads to a kinetic phase shift added to the initial phase. On the other hand, the amplitude of oscillation is suppressed by the surface disorder while it has no influence on the phase of oscillation. Furthermore, with the help of the vertical bias, a special (1,-2) 3D TI PN junction can be achieved, leading to a novel spin precession phenomenon.

Pursuing two-dimensional (2D) intrinsic ferromagnetism with high Curie temperature and great mechanical flexibility has attracted great interest in flexible spintronics. In the present work, we carried out a density functional theory (DFT) investigation on the 2D M2Se3 (M=Co, Ni and Pd) monolayers to understand their structural stabilities, electronic, magnetic and mechanical properties. Our results show that the Co2Se3 monolayer exhibits a fascinating half-metallic ferromagnetism with high Curie temperature (>700K). In addition, due to their unique buckling hinge-like structure, M2Se3 monolayers possess the large out-of-plane negative Poisson's ratio (NPR) and superior mechanical flexibility evidenced by their unusual critical strain two times greater than the well-known 2D materials. These findings imply that 2D M2Se3 family is the promising materials for the applications in the flexible and high-density spintronic nanodevices.

We study the transport of chiral Majorana edge modes (CMEMs) in a hybrid quantum anomalous Hall insulator-topological superconductor (QAHI-TSC) system in which the TSC region contains a Josephson junction and a cavity. The Josephson junction undergoes a topological transition when the magnetic flux through the cavity passes through half-integer multiples of magnetic flux quantum. For the trivial phase, the CMEMs transmit along the QAHI-TSC interface as without magnetic flux. However, for the nontrivial phase, a zero-energy Majorana state appears in the cavity, leading that a CMEM can resonantly tunnel through the Majorana state to a different CMEM. These findings may provide a feasible scheme to control the transport of CMEMs by using the magnetic flux and the transport pattern can be customized by setting the size of the TSC., Comment: 5 pages, 4 figures

The thermoelectric properties of the surface states in three-dimensional topological insulator nanowires are studied. The Seebeck coefficients $S_c$ and the dimensionless thermoelectrical figure of merit $ZT$ are obtained by using the tight-binding Hamiltonian combining with the nonequilibrium Green's function method. They are strongly dependent on the gate voltage and the longitudinal and perpendicular magnetic fields. By changing the gate voltage or magnetic fields, the values of $S_c$ and $ZT$ can be easily controlled. At the zero magnetic fields and zero gate voltage, or at the large perpendicular magnetic field and nonzero gate voltage, $ZT$ has the large value. Owing to the electron-hole symmetry, $S_c$ is an odd function of the Fermi energy while $ZT$ is an even function regardless of the magnetic fields. $S_c$ and $ZT$ show peaks when the quantized transmission coefficient jumps from one plateau to another. The highest peak appears while the Fermi energy is near the Dirac point. At the zero perpendicular magnetic field and zero gate voltage, the height of $n$th peak of $S_C$ is $\frac{k_B}{e}\texttt{ln}2/(|n|+1/2)$ and $\frac{k_B}{e}\texttt{ln}2/|n|$ for the longitudinal magnetic flux $\phi_{\parallel} = 0 $ and $\pi$, respectively. Finally, we also study the effect of disorder and find that $S_c$ and $ZT$ are robust against disorder. In particular, the large value of $ZT$ can survive even if at the strong disorder. These characteristics (that $ZT$ has the large value, is easily regulated, and is robust against the disorder) are very beneficial for the application of the thermoelectricity., Comment: 9 pages,10 figures

We theoretically study the electronic transport through a ferromagnet-Ising superconductor junction. A tight-binding Hamiltonian describing the Ising superconductor is presented. Then by combing the non-equilibrium Green's function method, the expressions of Andreev reflection coefficient and conductance are obtained. A strong magnetoanisotropic spin-triplet Andreev reflection is shown, and the magnetoanisotropic period is $\pi$ instead of $2\pi$ as in the conventional magnetoanisotropic system. We demonstrate a significant increase of the spin-triplet Andreev reflection for the single-band Ising superconductor. Furthermore, the dependence of the Andreev reflection on the incident energy and incident angle are also investigated. A complete Andreev reflection can occur when the incident energy is equal to the superconductor gap, regardless of the Fermi energy (spin polarization) of the ferromagnet. For the suitable oblique incidence, the spin-triplet Andreev reflection can be strongly enhanced. In addition, the conductance spectroscopies of both zero bias and finite bias are studied, and the influence of gate voltage, exchange energy, and spin-orbit coupling on the conductance spectroscopy are discussed in detail. The conductance reveals a strong magnetoanisotropy with period $\pi$ as the Andreev reflection coefficient. When the magnetization direction is parallel to the junction plane, a large conductance peak always emerges at the superconductor gap. This work offers a comprehensive and systematic study of the spin-triplet Andreev reflection, and has underlying application of $\pi$-periodic spin valve in spintronics., Comment: 10 pages, 9 figures

In analogy with light refraction at optical boundary, ballistic electrons also undergo refraction when propagate across a semiconductor junction. Establishing a negative refractive index in conventional optical materials is difficult, but the realization of negative refraction in electronic system is conceptually straightforward, which has been verified in graphene p-n junctions in recent experiments. Here, we propose a model to realize double refraction and double focusing of electric current by a normal-hexagonal semiconductor junction. The double refraction can be either positive or negative, depending on the junction being n-n type or p-n type. Based on the valley-dependent negative refraction, a spin splitter (valley splitter) is designed at the p-n junction system, where the spin-up and spin-down electrons are focused at different regions. These findings may be useful for the engineering of double lenses in electronic system and have underlying application of spin splitter in spintronics., Comment: 6 pages, 6 figures

Since the concept of spin superconductor was proposed, all the related studies concentrate on spin-polarized case. Here, we generalize the study to spin-non-polarized case. The free energy of non-polarized spin superconductor is obtained, and the Ginzburg-Landau-type equations are derived by using the variational method. These Ginzburg-Landau-type equations can be reduced to the spin-polarized case when the spin direction is fixed. Moreover, the expressions of super linear and angular spin currents inside the superconductor are derived. We demonstrate that the electric field induced by super spin current is equal to the one induced by equivalent charge obtained from the second Ginzburg-Landau-type equation, which shows self-consistency of our theory. By applying these Ginzburg-Landau-type equations, the effect of electric field on the superconductor is also studied. These results will help us get a better understanding of the spin superconductor and the related topics such as Bose-Einstein condensate of magnons and spin superfluidity., Comment: 9 pages, 5 figures

We study spin transport through a normal metal-spin superconductor junction. A spin-flip reflection is demonstrated at the interface, where a spin-up electron incident from the normal metal can be reflected as a spin-down electron and the spin $2\times \hbar/2$ will be injected into the spin superconductor. When the (spin) voltage is smaller than the gap of the spin superconductor, the spin-flip reflection determines the transport properties of the junction. We consider both graphene-based (linear-dispersion-relation) and quadratic-dispersion-relation normal metal-spin superconductor junctions in detail. For the two-dimensional graphene-based junction, the spin-flip reflected electron can be along the specular direction (retro-direction) when the incident and reflected electron locates in the same band (different bands). A perfect spin-flip reflection can occur when the incident electron is normal to the interface, and the reflection coefficient is slightly suppressed for the oblique incident case. As a comparison, for the one-dimensional quadratic-dispersion-relation junction, the spin-flip reflection coefficient can reach 1 at certain incident energies. In addition, both the charge current and the spin current under a charge (spin) voltage are studied. The spin conductance is proportional to the spin-flip reflection coefficient when the spin voltage is less than the gap of the spin superconductor. These results will help us get a better understanding of spin transport through the normal metal-spin superconductor junction., Comment: 11 pages, 9 figures