101. Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
- Author
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François Ducastelle, Eberth A. Quezada-Lopez, Jairo Velasco, C. Bena, Frédéric Joucken, Zhehao Ge, Kenji Watanabe, Takashi Tanagushi, University of California [Santa Cruz] (UCSC), University of California, Arizona State University [Tempe] (ASU), Institut de Physique Théorique - UMR CNRS 3681 (IPHT), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), LEM, UMR 104, CNRS-ONERA, Université Paris-Saclay (Laboratoire d'étude des microstructures), ONERA-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), DMAS, ONERA, Université Paris Saclay [Châtillon], ONERA-Université Paris-Saclay, National Institute for Materials Science (NIMS), J. V. J. acknowledges support from the National Science Foundation under Grant No. DMR-1753367 and the Army Research Office under Contract No. W911NF-17-1-0473. K. W. and T. T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant No. JPMXP0112101001 and JSPS KAKENHI Grant No. JP20H00354., University of California [Santa Cruz] (UC Santa Cruz), University of California (UC), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Band gap ,FOS: Physical sciences ,General Physics and Astronomy ,Tight-binding model ,02 engineering and technology ,Local density of states ,01 natural sciences ,law.invention ,Condensed Matter::Materials Science ,[SPI]Engineering Sciences [physics] ,Tight binding ,Dopants ,law ,Condensed Matter::Superconductivity ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,0103 physical sciences ,Physics::Atomic and Molecular Clusters ,[CHIM]Chemical Sciences ,010306 general physics ,Scanning tunneling microscopy ,[PHYS]Physics [physics] ,Condensed Matter - Materials Science ,Valence (chemistry) ,Condensed matter physics ,Dopant ,Condensed Matter - Mesoscale and Nanoscale Physics ,Graphene ,Materials Science (cond-mat.mtrl-sci) ,021001 nanoscience & nanotechnology ,3. Good health ,Scanning tunneling microscope ,0210 nano-technology ,Bilayer graphene - Abstract
The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable bandgap, the existence of midgap states induced by dopants has been conjectured, but never confirmed experimentally. Here, we report scanning tunneling microscopy and spectroscopy results, supported by tight-binding calculations, that demonstrate the existence of midgap states in BLG. We show that the midgap state in BLG -- for which we demonstrate gate-tunability -- appears when the dopant is hosted on the non-dimer sublattice sites. We further evidence the presence of narrow resonances at the onset of the high energy bands (valence or conduction, depending on the dopant type) when the dopants lie on the dimer sublattice sites. These results suggest that dopants/defects can play an important role in the transport and optical properties of multilayer graphene samples, especially at energies close to the band extrema., Includes supplementary material
- Published
- 2021
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