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Micromagnetic simulations have been used to create reversible logic gates that utilize magnetic skyrmions as input and output signals. The geometrical design of the logic devices consists of a two-dimensional assembly of ferromagnetic nanotracks, resembling rectangular grooves. Drawing an analogy to the billiard-ball model, this study takes into account elastic collisions between magnetic skyrmions and introduces the concept of control skyrmion. The application of spin-polarized currents to the system induces the motion of magnetic skyrmions along the nanotracks. The synchronized movement of magnetic skyrmions across the operational logic gates, required for their interaction, is achieved by incorporating multiple triangular magnetic notches along the nanotracks. Short polarized current pulses are then applied through the logic gates to facilitate this process. We have successfully implemented the XOR/AND and Full Adder logic gates as well as the reversible Toffoli and Peres logic gates using skyrmion-based architectures for computing. Our results offer valuable guidelines for leveraging magnetic skyrmions as digital signals in skyrmion-based computing systems. [ABSTRACT FROM AUTHOR]

Frequency encoded reconfigurable logic gates OR and AND are designed using interferometric switch based on quantum dot semiconductor optical amplifier (QDSOA) and simulated using MATLAB for the first time as far as our knowledge goes. The amplitude modulation (AM) and quality factor ( Q fe ) are calculated using numerical simulations confirming practical feasibility of the logic gates. This paper also investigates the effect of amplified spontaneous emission (ASE) noise on AM, Q fe and signal-to-noise ratio (SNR) values. AM below 0.005 dB and Q fe more than 30 dB ensure error free operation of the logic gates. [ABSTRACT FROM AUTHOR]

Magnetic skyrmion is a promising information carrier for its low critical driven current density, topological stability, and small size, which has been proposed for various devices such as racetrack memory and logic gates. However, the skyrmion Hall effect originating from Magnus force leads to transverse motion, which hinders the development of skyrmionic device applications. Here, we propose artificial tracks built by standing surface acoustic waves (SSAWs) to suppress the skyrmion Hall effect through micromagnetic simulations. We systematically study the dynamics of an isolated skyrmion under SSAWs and driven currents in a prototype of the ferromagnetic skyrmion system. The skyrmion Hall angle changes from 80° to 0°, where the skyrmion motion is along the driven current. An analytical model considering magnetoelastic energy induced by SSAWs is developed, and a linear relation between the current density and the critical SSAW amplitude to eliminate the skyrmion Hall effect is achieved. Furthermore, a reconfigurable multichannel skyrmion racetrack is constructed through the change of SSAW wavelengths. Our work opens a feasible route for the suppression of skyrmion Hall effect via SSAWs. [ABSTRACT FROM AUTHOR]

Owing to the advanced fabrication technology of silicon, silicon waveguides are particularly attractive for implementing all-optical signal processing devices and switches. Therefore, in this paper, a silicon-on-silica waveguide that consists of four slots arranged in the shape of letter E is proposed to be employed as the building block for simulating fundamental all-optical logic gates (AOLGs), including XOR, AND, OR, NOT, NOR, NAND, and XNOR, at 1.55 μm telecommunications wavelength. The operation concept of these logic gates relies on the constructive and destructive interference that results from the phase difference induced by optical beams that are incident on the E-shaped waveguide. The performance of the target logic gates is assessed against the contrast ratio (CR) metric. Moreover, the dependence of the spectral transmission on the device's key operating parameters is investigated and assessed. Compared to other reported designs, the results obtained by conducting simulations using the finite-difference-time-domain in lumerical commercial software show that the proposed waveguide can operate at a higher speed of 80 Gb/s and attain higher CRs of 36, 39, 35.5, 28.8, 30, 38, and 36.7 dB for logic XOR, AND, OR, NOT, NOR, NAND, and XNOR, respectively. This suggests that by using the proposed scheme, AOLGs could be realized more feasibly with greater performance and faster operation toward satisfying the present and future needs of light wave circuits and systems. [ABSTRACT FROM AUTHOR]

We propose a scheme to investigate the spatial modulation of the refractive index in a dense atomic ensemble under the action of the Laguerre–Gaussian (LG) beams. Theoretical derivations based on a density-matrix approach associated with numerical simulations are utilized to study the behaviors of the index of refraction, showing that the azimuthal and radial mode indices (i.e., l 2 and p 2) of the LG beams significantly affect the real and imaginary parts of the refractive index. To be specific, the number of the dispersive peaks is determined by (p 2 + 1) | l 2 | , and there are 2 | l 2 | lossless petals in conjunction with p 2 concentric absorption rings centered on the vortex center. Furthermore, by tuning the phase values of the electric and magnetic components of the electromagnetic field, the index of refraction can be drastically tuned from negative to zero to positive and accompanied by periodic absorption and amplification. This investigation provides a powerful tool for manipulating the index of refraction through a nonlinear interaction between atoms and the vortex beams and suggests potential applications in optical switching, logic gates, and optical storage with spatially varying refractive indices. [ABSTRACT FROM AUTHOR]

Bistability, a universal phenomenon found in diverse fields such as biology, chemistry, and physics, describes a scenario in which a system has two stable equilibrium states and resets to one of the two states. The ability to switch between these two states is the basis for a wide range of applications, particularly in memory and logic operations. Here, we present a universal approach to achieve bistable switching in magnonics, the field processing data using spin waves. A pronounced bistable window is observed in a 1 μm wide magnonic conduit under an external rf drive. The system is characterized by two magnonic stable states defined as low and high spin-wave amplitude states. The switching between these two states is realized by another propagating spin wave sent into the rf driven region. This magnonic bistable switching is used to design a magnonic repeater, which receives the original decayed and distorted spin wave and regenerates a new spin wave with amplified amplitude and normalized phase. Our magnonic repeater can be installed at the inputs of each magnonic logic gate to overcome the spin-wave amplitude degradation and phase distortion during previous propagation and achieve integrated magnonic circuits or magnonic neuromorphic networks. A repeater takes an input signal and retransmits is, and a vital component for extending the range of signals. Here, Wang et al. demonstrate a magnon repeater, based on the bistable switching between low and high amplitude spin-waves. [ABSTRACT FROM AUTHOR]

Inspired by the human brain's capacity as a powerful biological computer capable of simultaneously processing a vast array of cognitive tasks, many emerging artificial synapse devices have been developed in recent years. Electric-double-layer (EDL) transistors based on interfacial ion-modulation have attracted widespread attention for simulating synaptic plasticity and neural functions. Here, low-voltage EDL p-type thin-film transistors (TFTs) are fabricated on glass substrates, with Ni-doped cuprous iodide (Ni0.06Cu0.94I) as the channel and chitosan as the dielectric. The electrical performance of the Ni0.06Cu0.94I TFTs is investigated: current on/off ratio of 6.4 × 104, subthreshold swing of 33 mV/dec, threshold voltage of 1.38 V, operating voltage of 2 V, and saturation field-effect mobility of 15.75 cm2 V−1 s−1. A dual in-plane gate OR logic operation is demonstrated. Importantly, by applying single voltage pulses, dual voltage pulses, and multiple voltage pulses to the gate, the Ni0.06Cu0.94I transistors exhibited typical synaptic characteristics, including short-term potentiation, short-term depression, long-term potentiation, long-term depression, paired-pulse facilitation, and spiking-rate-dependent plasticity. Furthermore, the synaptic transistor can also simulate the learning–forgetting–relearning process of the human brain. These remarkable behaviors of voltage-stimulated synaptic transistors have potential for neuromorphic applications in future artificial systems. [ABSTRACT FROM AUTHOR]

In this study, two chemosensors, N5R1 and N5R2, based on 5‐(4‐nitrophenyl)‐2‐furaldehyde, with varying electron‐withdrawing groups, were synthesized and effectively employed for the colorimetric selective detection of arsenite anions in a DMSO/H2O solvent mixture (8 : 2, v/v). Chemosensors N5R1 and N5R2 exhibited a distinct color change upon binding with arsenite, accompanied by a spectral shift toward the near‐infrared region (Δλmax exceeding 200 nm). These chemosensors established stability between a pH range 6–12. Among them, N5R2 displayed the lowest detection limit of 17.63 ppb with a high binding constant of 2.6163×105 M−1 for arsenite. The binding mechanism involved initial hydrogen bonding between the NH binding site and the arsenite anion, followed by deprotonation and an intramolecular charge transfer (ICT) mechanism. The mechanism was confirmed through UV and 1H NMR titrations, cyclic voltammetric studies, and theoretical calculations. The interactions between the sensor and arsenite anions were further analyzed using global reactivity parameters (GRPs). Practical applications were demonstrated through the utilization of test strips and molecular logic gates. Real water samples, honey, and milk samples were successfully analyzed by both chemosensors for the sensing of arsenite. [ABSTRACT FROM AUTHOR]

The interfacial Dzyaloshinskii–Moriya interaction (DMI) acting as an essential source to stabilize spin textures in ferromagnetic ultrathin films has revealed its significant role in spin–orbit torque (SOT)-driven magnetic switching. Based on a convincing homochiral Néel domain wall model, the in-plane (IP) magnetic field associated with the DMI effect has been confirmed as an essential prerequisite for deterministic SOT-driven switching. Although the presence of the IP field is required, the impact of IP field magnitude combined with the DMI effect on SOT-driven switching in different heavy metals (HMs) has never been considered together. In this research, SOT-induced switching under various IP fields in Pt, W, or Ta/CoFeB/MgO systems has been studied. The results show that the critical threshold current IC is almost independent of the IP field in the Pt-based structure; however, it significantly decreases with an increase in the IP field in the W- and Ta-based systems. Combining the derived DMI field and the magnetic domain nucleation, it is concluded that the significant difference in DMI fields and the domains' nucleating positions are the main reasons for the above phenomenon. Exploiting the distinct dependent properties of IC on the IP field, a six resistance state multilevel storage and five programmable spin logic gates are proposed and realized. This study provides insight into the special ability of the SOT effect modulated by the DMI, and also expands an effective way to construct spin-based devices based on this unique spintronic effect. [ABSTRACT FROM AUTHOR]

Direct printing of conjugated polymer thin‐film transistors enables the fabrication of deformable devices with low cost, high throughput, and large area. However, a relatively poor device performance of printed devices remains a major obstacle to their application in high‐end display backplanes and integrated circuits. In this study, high‐performance and highly stackable printed organic transistors is developed, arrays, and circuits using a near‐amorphous polymer, indacenodithiophene‐co‐benzothiadiazole (IDT‐BT). The printed devices exhibited high saturation mobility (>1 cm2 V−1 s−1), high on/off ratio (>107), and low subthreshold slope (245 mV dec−1). In addition, 16 × 16 printed IDT‐BT arrays achieved 100% fabrication yield, with excellent device‐to‐device uniformity and low variations of mobility (9.55%) and threshold voltage (4.51%), and good operational and environmental stability (>365 days). Furthermore, five stacked 3D transistors are demonstrated with an excellent 3D uniformity without compromising device performance due to a low required thermal budget for processing amorphous IDT‐BT. Finally, a new concept of 3D universal logic gate with high voltage gain (33.91 V/V) and record density (100 printed transistors per cm2) is proposed and fabricated, which is relevant for the commercialization of low‐cost printed display backplanes and high‐density integrated circuits based on highly processable polymeric semiconductors. [ABSTRACT FROM AUTHOR]

Synaptic devices have gained prominence as viable alternatives to conventional complementary metal‐oxide‐semiconductor‐based (CMOS) electronics in the information processing field owing to their inherent advantages in analog and parallel operations. The potential of synaptic devices has not yet been fully utilized for logic operations because only the conventional binary logic structure has been applied to analog synaptic devices, leading to the loss of advantages unique to analog signals. To resolve this issue, an innovative concept is proposed: an analog logic gate that can perform parallel operations at the device level and is coupled with logic reconfigurations, enabling comprehensive analog computation. This logic gate comprises two synaptic devices with different retention characteristics, adjusted by the side‐chain engineering of an organic polymer. The long‐term and short‐term synaptic devices serve as reconfigurable synapse for logic mode selection and parallel processable logic synapse, respectively. In this study, the reconfigurable and parallel processable synaptic logic circuit is effectively implemented in a personalized disease risk diagnostic system. This innovative approach not only allows for the simultaneous computation of analog‐formed diagnostic data, but also enhances both computing efficiency and system complexity in general synaptic systems. [ABSTRACT FROM AUTHOR]

During the course of disease progression, changes in nucleic acid and non-nucleic acid marker contents can serve as indicators for disease diagnosis. The clustered regularly spaced short palindromic repeat (CRISPR)/Cas12a system, as a natural amplifier, has been widely exploited to construct amplified detection platforms for the detection of various analytes owing to its advantages of simplicity, high activity, and strong specificity. Nowadays, most of the focus is on the use of nucleic acid chains as response elements to activate Cas12a. Consequently, the development of switchable crRNA-based detection methods is urgently needed to expand such a switch's application in the quantification of non-nucleic acid analytes. A powerful and universal fluorescent sensing platform for the detection of non-nucleic acid analytes based on programmable switching of CRISPR/Cas12 activity via modulating crRNA conformation is proposed. In this system, two states, one in which the crRNA sequence is partially caged with a specially designed blocker DNA ("locked state") and the other where native crRNA is regained after the blocker DNA gets lost ("unlocked state"), are modulated through target recognition. When a target is present, the function of the CRISPR/Cas12a system can be rapidly reinstated by switching locking to unlocking to cleave fluorescent reporters for signal output. As a proof-of-concept example, it was demonstrated that this platform could detect three analytes, namely adenosine triphosphate (ATP), glutathione (GSH), and formamidopyrimidine-DNA glycosylase (Fpg), with high specificity and good sensitivity (LODATP = 0.046 μM, LODGSH = 0.1 μM, and LODFpg = 0.2 U mL−1). Moreover, by importing a programmable module, a set of CRISPR/Cas12 system-based logic gates was successfully constructed. Our constructed switchable crRNA-based sensing platform is universal, in which the target binding event is converted into the tunable trans-cleavage of ssDNA reporters via Cas12a, and thus, this platform could be expanded for detecting a wide spectrum of analytes by redesigning the corresponding sequence for target recognition. With its properties of universality, robustness, convenience, and programmability, the present platform indeed provides a useful and practical tool for molecular diagnosis and biomedicine research. [ABSTRACT FROM AUTHOR]

The study presents a novel self‐powered ultraviolet (UV) photodetector harnessing both polarization fields and photovoltaic effects, enabling the realization of ultra‐low power, reconfigurable optoelectronic logic gates. The approach is demonstrated on a CuO/BaTiO3 heterojunction photodetector. The behavior of the photodetector is augmented by the poling effect, aligning the internal electric field of the BaTiO3 through the application of a robust external electric field, thereby facilitating the implementation of optoelectronic logic gates. In the unpoled state, the “XOR” and “OR” logic gates operated at voltages of 750 and −500 µV, respectively. However, upon poling up state, the “XOR” logic gate exhibits reduced operation voltage, operating at 500 µV, while the “OR” logic gate implements clarity at −500 µV. In the unpoled state the “AND” logic gate does not operate; however, upon poling in the downward direction, it operated at −500 µV. The achievement demonstrates successful ultra‐low‐power logic operations, utilizing voltages in the hundreds of micron scale, under a 310 nm wavelength and a light intensity of 0.52 mW·cm−2. Furthermore, controllable polarization electric fields in BaTiO3 enable the operation of “AND” logic gate in the unpoled state, presenting a promising avenue for future research in optoelectronic logic gate design. [ABSTRACT FROM AUTHOR]

The semiconductor industry has encountered the physical constraints of current semiconductor materials and the impending end of Moore's forecast. The recent edition of the International Roadmap for Devices and Systems reveals that the semiconductor industry is now combining More Moore, More than Moore and Beyond CMOS to explore the possibilities towards emerging nanotechnologies like Quantum Cellular Automata (QCA). The fast-working speed, extremely low energy and high packing density make QCA incredibly appealing. In this work, machine learning-based models are developed to predict the energy dissipation of LT universal logic gates in advance with single-cell displacement defect (SCDD) and cell polarisation. Firstly, the cell-wise energy components of the universal logic gates realised by Layered T (LT) and Majority voter (MV) and logic reduction methodologies are estimated utilising the coherence vector (watt/energy) simulation engine of QCADesigner-E. Then, SCDD is introduced at the output LT universal gates in the horizontal and vertical directions, and consequent deviation in output cell polarisation and energy dissipation are examined. A dataset, namely scdd_polarisation_energy (SPE), is created. In particular, K-Nearest Neighbour, Random Forest and Polynomial Regression-based machine learning (ML) models are found to be competent to anticipate the energy dissipation of LT universal logic gates. In ML models, the SCDD at the output cell and output polarisation are used as estimators, and energy dissipation (in electron Volt) is utilised as a response. These models offer less-complex and ease the energy estimation process in the QCA layout. The models are assessed based on r2-score, mean absolute error (MAE), mean squared error (MSE), and root mean squared error (RMSE). [ABSTRACT FROM AUTHOR]

A promising alternative for the CMOS technology is the Quantum-dot Cellular Automata (QCA) technology. In this technology, the low-latency, ultra-dense, and low-power consumption digital circuits are designed. Until now, many digital circuits are designed and improved in the QCA technology. The Arithmetic Logic Unit (ALU) is an important digital circuit that designed in this technology. The reversible logic gates such as NOT, Feynman, and Fredkin gates are important elements in the arithmetic circuits and processors design. In addition, considering the cell arrangements has a great influence on the area and speed of execution of computing devices in the QCA technology. This paper's goal is to build a new multilayer QCA Reversible ALU (RALU). In this paper, we used one HN and three Fredkin gates to design and implement a new and efficient RALU circuit in the QCA technology. The proposed QCA RALU circuit is simulated and tested using QCADesigner tool. The simulation results demonstrate that the developed QCA multilayer RALU has 489 cells, 0.36 µm2 area, 3.75 clock cycles delay, 2.02 meV average energy, and 5.41 nW power dissipation. In addition, the comparison indicates that the developed QCA RALU circuit has advantages compared to other QCA RALU circuits with regards to energy, area, latency, and cost. [ABSTRACT FROM AUTHOR]

Implementation of logic gates has been investigated in nonlinear dynamical systems from various perspectives over the years. Specifically, logic gates have been implemented in both single nonlinear systems and coupled nonlinear oscillators. The majority of the works in the literature have been done on the evolution of single oscillators into OR/AND or NOR/NAND logic gates. In the present study, we demonstrate the design of logic gates in bi-directionally coupled double-well Duffing oscillators by applying two logic inputs to the drive system alone along with a fixed bias. The nonlinear system, comprising both bi-directional components, exhibits varied logic behaviors within an optimal range of coupling strength. Both attractive and repulsive couplings yield similar and complementary logic behaviors in the first and second oscillators. These couplings play a major role in exhibiting fundamental and universal logic gates in simple nonlinear systems. Under a positive bias, both the first and second oscillators demonstrate OR logic gate for the attractive coupling, while exhibiting OR and NOR logic gates, respectively, for the repulsive coupling. Conversely, under a negative bias, both the first and second oscillators display AND logic gate for the attractive coupling, and AND and NAND logical outputs for the repulsive coupling. Furthermore, we confirm the robustness of the bi-directional oscillators against moderate noise in maintaining the desired logical outputs. [ABSTRACT FROM AUTHOR]

Optical logic devices are essential functional devices for achieving optical signal processing. In this study, we design an ultra-compact (4.92 × 2.52 μm2) reconfigurable optical logic gate by using inverse design method with DBS algorithm based on Sb2Se3-SOI integrated platform. By selecting different amorphous/crystalline distributions of Sb2Se3 via programmable electrical triggers, the designed structure can switch between OR, XOR, NOT or AND logic gate. This structure works well for all four logic functions in the wavelength range of 1540–1560 nm. Especially at the wavelength of 1550 nm, the Contrast Ratios for XOR, NOT and AND logic gate are 13.77 dB, 11.69 dB and 3.01 dB, respectively, indicating good logical judgment ability of the device. Our design is robust to a certain range of fabrication imperfections. Even if performance weakens due to deviations, improvements can be obtained by rearranging the configurations of Sb2Se3 without reproducing the whole device. [ABSTRACT FROM AUTHOR]

The blockchain-based Electronic Medical Record (EMR) data storage system encounters challenges which are data leakage, insufficient access control, and low retrieval efficiency. In response to these issues, this paper proposes a lightweight searchable encryption and access control system for sharing EMR data securely. The lightweight searchable encryption scheme which is achieved by integrating the trapdoor verification phase with the keyword retrieval phase is constructed using BGG13 + and MP12. User access control is implemented through a Boolean circuit to replace arithmetic operations and thus improve arithmetic efficiency. Since logic operations can reduce the computation time, this paper uses Boolean circuits for user rights verification implementation. In addition, this paper adopts the Bloom filter as the system index to enhance the efficiency of block-chain data retrieval. According to the simulation results, there is a performance advantage of this system over similar systems. [ABSTRACT FROM AUTHOR]

The entanglement of the momentum of light with its spin at interfaces or inside structured media, known as the photonic spin‐Hall effect, holds great promise for various applications, such as beam splitting, focusing, and polarization detection. However, the photonic spin‐Hall effect remains unexplored in the field of logic operation. In this work, the photonic spin‐Hall effect of spoof surface plasmon polaritons (SSPPs) in programmable metamaterial is demonstrated. Moreover, photonic spin‐Hall logic devices based on programmable spoof plasmonic metamaterial are designed, enabling the control of energy flow through the utilization of both spin and digital coding, with examples including SSPPs logic gates such as the "AND" gate, the "NIMPLY" gate (A AND NOT B), the "OR" gate, and the "NOT" gate. The findings introduce the combination of digital coding metamaterial with the photonic spin Hall effect, which offers a powerful and flexible platform for controlling electromagnetic waves in information processing. [ABSTRACT FROM AUTHOR]

All‐optical neural networks have advantages in higher throughput, higher speed as well as lower energy consumption compared to electrical neural networks. Optical neural networks have already shown great potential in various applications; however, the operation speed of the network is limited by the 2D detector as most optical neural networks rely on space to space projection. Here, a space to time projection approach to build diffractive deep neural network (D2NN) is proposed, which can project spatial intensity distribution into time‐domain intensity variation, thus bypassing the detection speed limit of 2D imaging device. Based on this scheme, high‐speed all‐optical logic gates are theoretically analyzed and experimentally realized. In this case, the network's operation speed is only limited by the photodetector (PD), which can reach GHz levels. Moreover, the method will show great advantage when it comes to wavelengths where 2D detectors are not achievable easily such as infrared, terahertz or microwaves. [ABSTRACT FROM AUTHOR]

Magnetic skyrmions, despite being promising ultra‐low energy information carriers with wide bandwidth and nonvolatility, are not used for any universal scalable logic system. Here, a detailed understanding of skyrmion motion in nanowires under different geometries and drive conditions is established. Then, these insights are used to introduce a general Boolean‐universal gate block system with components, emulation, and simulation algorithms. The resulting system can collectively form a scalable, cascadable, and universal skyrmion logic system and produce arbitrary logic designs. The NOR, AND, OR, NAND, XNOR, and FULL ADDER gates are provided here as example demonstrations of the system. The toolkit lays the foundation for bridging the gap between theoretical exploration and practical implementation of skyrmion‐based computing. The skyrmion block components may help reduce energy consumption per logic operation after eliminating Joule heating. The insights and designs may help skyrmions be used in state‐of‐the‐art electronic design automation. [ABSTRACT FROM AUTHOR]

Chimeric antigen receptor T (CAR-T) cell therapy as a form of adoptive cell therapy (ACT) has shown significant promise in cancer treatment, demonstrated by the FDA-approved CAR-T cell therapies targeting CD19 or B cell maturation antigen (BCMA) for hematological malignancies, albeit with moderate outcomes in solid tumors. However, despite these advancements, the efficacy of CAR-T therapy is often compromised by T cell exhaustion, a phenomenon that impedes the persistence and effector function of CAR-T cells, leading to a relapse rate of up to 75% in patients treated with CD19 or CD22 CAR-T cells for hematological malignancies. Strategies to overcome CAR-T exhaustion employ state-of-the-art genomic engineering tools and single-cell sequencing technologies. In this review, we provide a comprehensive understanding of the latest mechanistic insights into T cell exhaustion and their implications for the current efforts to optimize CAR-T cell therapy. These insights, combined with lessons learned from benchmarking CAR-T based products in recent clinical trials, aim to address the challenges posed by T cell exhaustion, potentially setting the stage for the development of tailored next-generation approaches to cancer treatment. T cell exhaustion is a major barrier to CAR-T therapy efficacy. This review explores strategies including CAR circuit engineering via multiplex CRISPR and logic gates to enhance CAR-T cell potency and overcome exhaustion. [Display omitted] [ABSTRACT FROM AUTHOR]

The interest in alternative logic technologies is continuously increasing for short nanometer designs. From this viewpoint, logic gates, full adder and D-latch designs based on graphene nanoribbon field effect transistors (GNRFETs) at 7 nm technology nodes were presented, considering that these structures are core elements for digital integrated circuits. Firstly, NOT, NOR and NAND gates were implemented using GNRFETs. Then, 28T full adder and 18T D-latch circuits based on CMOS logic were designed using GNRFETs. As the first result of this work, it was shown through HSPICE simulations that the average power consumption of the considered logic circuits employing GNRFETs was 78.6% lower than those built using classical Si-based MOSFETs. Similarly, the delay advantage of the logic circuits employing GNRFETs was calculated to be 53.2% lower than those using Si-based MOSFET counterparts. In addition, a deep learning model was developed to model both the power consumption and the propagation delay of GNRFET-based logic inverters. As the second result, it was demonstrated that the developed deep learning model could accurately represent the power consumption and delay of GNRFET-based logic circuits with the coefficient of determination (R2) values in the range of 0.86 and 0.99. [ABSTRACT FROM AUTHOR]

The von Neumann architecture is no longer sufficient for handling large-scale data. In-memory computing has emerged as the potent method for breaking through the memory bottleneck. A new 10T SRAM bitcell with row and column control lines called RC-SRAM is proposed in this article. The architecture based on RC-SRAM can achieve bi-directional and operand-controllable logic-in-memory and search operations through different signal configurations, which can comprehensively respond to various occasions and needs. Moreover, we propose threshold-controlled logic gates for sensing, which effectively reduces the circuit area and improves accuracy. We validate the RC-SRAM with a 28 nm CMOS technology, and the results show that the circuits are not only full featured and flexible for customization but also have a significant increase in the working frequency. At VDD = 0.9 V and T = 25 °C, the bi-directional search frequency is up to 775 MHz and 567 MHz, and the speeds for row and column Boolean logic reach 759 MHz and 683 MHz. [ABSTRACT FROM AUTHOR]

The unique characteristics of an anti‐ambipolar switch (AAS) device exhibit Λ‐shaped transfer responses (namely delta conductance) and present unique opportunities to overcome the limit of silicon‐based, complementary metal‐oxide‐semiconductor (CMOS) logic circuits. It is crucial because a device that only turns on under a certain bias range can be utilized to simplify the logic circuit and reduce the device count and circuit area required to perform logic functions. In this study, a physically scalable AAS device is investigated using ZnO and dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene as heterojunction structures to reduce the operating voltage and enhance the peak current and peak‐to‐valley ratio of the AAS device. Moreover, novel logic circuits for AND, OR, XOR, DEMUX, and half‐adder functions are demonstrated using AAS devices. AAS device‐based logic circuits exhibit power‐efficiency characteristics (≈49 times lower than that of the 90‐nm silicon‐based CMOS inverter) and reduce the transistor count and the circuit area by ≈67% and ≈70%, respectively. These results indicate that the use of AAS device‐based logic circuits can be a promising approach to overcome the physical scaling limit of current CMOS technology. [ABSTRACT FROM AUTHOR]

Current-induced spin–orbit torque (SOT) facilitates the ultrafast electrical manipulation of magnetic tunnel junction (MTJ), which is a leading non-volatile technology for the microelectronic industry. The key bottleneck to the commercial application of SOT-MTJ is the absence of a practicable symmetry-breaking scheme to switch perpendicular magnetization without an external magnetic field. Here, we demonstrate the wafer-scale realization of internalized field-free switching in perpendicular SOT-MTJ using conventional materials and device structure. We utilize a dual-function tungsten (W) spacer, which generates sizable SOT while concomitantly breaking symmetry via interlayer exchange coupling (IEC). Tuning the W thickness enables field-free switching with two types of IEC. An optimized combination of SOT and IEC ensures competitive switching performance, with our device exhibiting excellent thermal stability, low switching current density, and fast operating speed. This work builds the long-sought bridge between SOT manipulation of magnetization and wafer-scale field-free perpendicular MTJ. It underscores the urgent need to incorporate perpendicular SOT-MTJ in integrated circuits for applications in logic, memory, and unconventional computing. [ABSTRACT FROM AUTHOR]

It is crucial to develop advanced optoelectronic devices that incorporate multiple functions, including sensing, storage, and computing, which is considered at the forefront of semiconductor optoelectronics to meet emerging functional diversification. In this study, by stacking the n‐type Ga2O3 with the n‐type MoS2 flakes, a Ga2O3/MoS2 heterostructure optoelectronic device with high rectification ratio of ≈105 and on/off ratio of ≈108 is fabricated, which achieves high detectivity of 1.34 × 109 Jones and high responsivity of 28.92 mA/W. More importantly, the Ga2O3/MoS2 heterostructure device shows potential ability to integrate sensing and memorizing, simultaneously, which can be used as artificial neuromorphic synaptic. The device exhibits excellent photo‐induced synaptic functions including short‐term plasticity, long‐term plasticity, and paired‐pulse facilitation, realizing the ability to couple light and electrical signals by Pavlovian associative learning. At last, the device also demonstrates the information processing ability to act as optoelectronic logic gate AND by synergistically regulating the light on/off states and gate voltage. The research introduces an innovative strategy for the development of next‐generation optoelectronic devices which are highly integrated with sensing, memory, and logic processing functions, demonstrating great application prospects in constructing an efficient artificial neuromorphic visual and logic systems. [ABSTRACT FROM AUTHOR]

Increasing demand for bio-interfaced human-machine interfaces propels the development of organic neuromorphic electronics with small form factors leveraging both ionic and electronic processes. Ion-based organic electrochemical transistors (OECTs) showing anti-ambipolarity (OFF-ON-OFF states) reduce the complexity and size of bio-realistic Hodgkin-Huxley(HH) spiking circuits and logic circuits. However, limited stable anti-ambipolar organic materials prevent the design of integrated, tunable, and multifunctional neuromorphic and logic-based systems. In this work, a general approach for tuning anti-ambipolar characteristics is presented through assembly of a p-n bilayer in a vertical OECT (vOECT) architecture. The vertical OECT design reduces device footprint, while the bilayer material tuning controls the anti-ambipolarity characteristics, allowing control of the device's on and off threshold voltages, and peak position, while reducing size thereby enabling tunable threshold spiking neurons and logic gates. Combining these components, a mimic of the retinal pathway reproducing the wavelength and light intensity encoding of horizontal cells to spiking retinal ganglion cells is demonstrated. This work enables further incorporation of conformable and adaptive OECT electronics into biointegrated devices featuring sensory coding through parallel processing for diverse artificial intelligence and computing applications. Stable anti-ambipolar organic materials are limited, thus preventing the design of integrated, tunable, and multifunctional neuromorphic systems. Here, the authors report a small form factor neuromorphic circuit based on organic anti-ambipolar materials, mimicking the pre-processing functions of the retina. [ABSTRACT FROM AUTHOR]

One of the important problems in the environment is heavy metal pollution, and fluorescence is one of the best methods for their detection due to its sensitivity, selectivity, and relatively rapid and easy operation. In this study, 1,8-diaminonaphthalene functionalized super-stable mesoporous silica (DAN-LUS-1) was synthesized and used as a fluorescence probe to identify Hg2+ and Fe3+ in food samples. The TGA and FT-IR spectra illustrated that 1,8-diaminonaphthalene was grafted into LUS-1. XRD patterns verified that the LUS-1 and functionalized mesoporous silica have a hexagonal symmetrical array of nano-channels. SEM images showed that the rod-like morphology of LUS-1 was preserved in DAN-LUS-1. Also, surface area and pore diameter decreased from 824 m2 g⁻1 and 3.61 nm for the pure LUS-1 to 748 m2 g⁻1 and 3.43 nm for the DAN-LUS-1, as determined by N₂ adsorption–desorption isotherms. This reduction demonstrated that 1,8-diaminonaphthalene immobilized into the pore of LUS-1. The DAN-LUS-1 fluorescence properties as a chemical sensor were studied with a 340/407 nm excitation/emission wavelength that was quenched by Hg2+ and Fe3+ ions. Hg2+ and Fe3+ were quantified using the fluorescence response in the working range 8.25–13.79 × 10–6 and 3.84–10.71 × 10–6 mol/L, with detection limits of 8.5 × 10–8 M and 1.3 × 10–7 M, respectively. Hg2+ and Fe3+ were measured in vetiver grass and spinach. Since the Fe3+ quenching can move in the opposite direction with sodium hexametaphosphate (SHMP) as a hiding compound for Fe3+, consequently, the circuit logic system was established with Fe3+, Hg2+, and SHMP as inputs and the fluorescent quench as the output. [ABSTRACT FROM AUTHOR]

This paper presents a new polar logic circuit using a single current conveyor, two MOS switches and two resistors in each case. Thus, polar NAND and NOR circuits are proposed. The circuits' operation details and simulation results are given in support of the proposed theory. The circuits are designed using CMOS CCII + with ±2 V supply voltage. The polar logic levels at the output are −1 and 1 V for logic 0 and 1, respectively. The gates' functioning for capacitive loading is also tested. The new circuits are expected to be useful in digital and communication systems. [ABSTRACT FROM AUTHOR]

The use of DNA structures in creating multimodal logic gates bears high potential for building molecular devices and computation systems. However, due to the complex designs or complicated working principles, the implementation of DNA logic gates within molecular devices and circuits is still quite limited. Here, we designed simple four-way DNA logic gates that can serve as multimodal platforms for simple to complex operations. Using the proximity quenching of the fluorophore–quencher pair in combination with the toehold-mediated strand displacement (TMSD) strategy, we have successfully demonstrated that the fluorescence output, which is a result of gate opening, solely relies on the oligonucleotide(s) input. We further demonstrated that this strategy can be used to create multimodal (tunable displacement initiation sites on the four-way platform) logic gates including YES, AND, OR, and the combinations thereof. The four-way DNA logic gates developed here bear high promise for building biological computers and next-generation smart molecular circuits with biosensing capabilities. [ABSTRACT FROM AUTHOR]

A new stable diarylnitroxide with two 2‐pyridyl groups in the ortho‐positions of the phenyl rings, in the close vicinity to the NO fragment, was obtained. Conformational flexibility of the molecule provides stimuli‐responsive reversible on/off switching of the intramolecular interactions, stabilizing the oxidized and reduced states of the nitroxide (due to the n‐π* interaction and the intramolecular H‐bonding, respectively) and giving rise to novel properties. The intrinsic electrofluorochromism of the oxoammonium cation rigidified by the intramolecular N−O bond between the pyridyl lone pair and the O atom was first disclosed. Structural simplicity and facile synthesis of the diarylnitroxide make it promising for creating novel types of redox‐switchable molecular logic gates. [ABSTRACT FROM AUTHOR]

Organic electrochemical transistors (OECTs) are promising devices for bioelectronics, such as biosensors. However, current cleanroom‐based microfabrication of OECTs hinders fast prototyping and widespread adoption of this technology for low‐volume, low‐cost applications. To address this limitation, a versatile and scalable approach for ultrafast laser microfabrication of OECTs is herein reported, where a femtosecond laser to pattern insulating polymers (such as parylene C or polyimide) is first used, exposing the underlying metal electrodes serving as transistor terminals (source, drain, or gate). After the first patterning step, conducting polymers, such as poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), or semiconducting polymers, are spin‐coated on the device surface. Another femtosecond laser patterning step subsequently defines the active polymer area contributing to the OECT performance by disconnecting the channel and gate from the surrounding spin‐coated film. The effective OECT width can be defined with high resolution (down to 2 µm) in less than a second of exposure. Micropatterning the OECT channel area significantly improved the transistor switching performance in the case of PEDOT:PSS‐based transistors, speeding up the devices by two orders of magnitude. The utility of this OECT manufacturing approach is demonstrated by fabricating complementary logic (inverters) and glucose biosensors, thereby showing its potential to accelerate OECT research. [ABSTRACT FROM AUTHOR]

High‐quality epitaxial graphene is prepared on semi‐insulated 4H‐SiC (0001) by ultra‐high vacuum thermal decomposition method and used in graphene/SiC/graphene ultraviolet‐visible dual‐band photodetectors. The dual‐band detector exhibits an extremely low dark current (5.2 × 10−14 A) and a peak responsivity of 1.17 A W−1 corresponding to an external quantum efficiency of 518%. A high detectivity of 3.14 × 1014 Jones is achieved under 280 nm light illumination at 30 V, while a high response speed is obtained with a rise time of 25.17 ns and a decay time of 540.10 ns. The detector shows a responsivity of 1.4 × 10−5 A W−1 and a detectivity of 6.5 × 109 Jones under 430 nm light illumination. The dual‐band detector equipped with SiC grating and asymmetrical graphene electrodes is demonstrated for high‐performance optoelectronic logic "AND" gate with high detectivity at 280 and 430 nm. [ABSTRACT FROM AUTHOR]

Herein, cucurbituril‐regulated supramolecular multi‐dimensional organic framework constructed is reported by tetraphenylvinyl grafted bromophenylpyridine salt derivatives (TPE‐BrN) and cucurbit[n]uril (n = 6, 7, 8) via non‐covalent cross‐linked, giving supramolecular macrocycle‐confined fluorescence‐phosphorescence dual emission at 560 and 510 nm in solid state. Different from the formation of TPE‐BrN⊂CB[6] complexes and TPE‐BrN⊂CB[7] nanoparticle, TPE‐BrN⊂CB[8] manifested high‐efficient 2D network assembly. TPE‐BrN⊂CB[8] assembly can effectively activate triplet‐state to singlet‐state Förster resonance energy transfer (TS‐FRET) with long‐lived near‐infrared emission at 675 nm via doping organic dye Nile red (NiR) and the energy transfer efficiency reached up to 99%. Although CB[7] can also induce the typical phosphorescence emission at 510 nm, there is no TS‐FRET occurring after doping NiR into TPE‐BrN⊂CB[7] assembly due to the formation of different assembly modes. The multicolor long‐lived emission has been demonstrated very well based on the TS‐FRET process activated by CB[8] macrocyclic confined 2D organic framework, which can be successfully applied to fingerprint imaging and the construction of logic gate systems. It provides a novel method for supramolecular macrocycle confined phosphorescence regulation and the development of luminescent materials. [ABSTRACT FROM AUTHOR]

This work demonstrates a high-performance monolithically integrated GaN inverters platform, which incorporates enhancement-mode (E-mode) and depletion-mode (D-mode) GaN high-electron-mobility transistors (HEMTs) simultaneously using an Al:HfOx-based charge trapping layer. The developed E-mode HEMT exhibits a positive threshold voltage of 2.6 V, a high ON–OFF current ratio of 1.9 × 108, a current density of 376 mA/mm, and an ON-resistance of 15.31 Ω·mm. Moreover, the direct-coupled field-effect-transistor logic (DCFL) GaN inverter was characterized with and without D-mode device threshold voltage (VTH) modulation, demonstrating improved output swing and switching threshold shift by proposed VTH modulation. The optimized DCFL GaN inverter manifests a switching threshold of 2.34 V, a logic voltage output swing of 4.98 V, and substantial logic-low and logic-high noise margins of 2.16 and 2.49 V, respectively, at a supply voltage of 5 V. These results present a promising approach toward realizing monolithically integrated GaN logic circuits for power IC applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • Room temperature and ultrafast synthesis of sulfur quantum dots (SQDs) is presented. • The conversion of elemental sulfur to fluorescent SQDs can be completed in 10 min. • The prepared SQDs have a photoluminescence quantum yield as high as 23.6%. • The utilization of SQDs to sensitively detect tetracycline and Ca2+ ions is reported. • A sensitive logic gate sensor based on SQDs is constructed. The direct and rapid conversion of abundant and cheap elemental sulfur into fluorescent sulfur quantum dots (SQDs) at room temperature is a critical and urgent challenge. Conventional synthesis methods require high temperatures, high pressures, or specific atmospheric conditions, making them complex and impractical for real applications. Herein, we propose a simple method for synthesizing SQDs simply by adding H 2 O 2 to an elemental sulfur-ethylenediamine (S-EDA) solution at room temperature. Remarkably, within a mere 10 min, SQDs with a photoluminescence quantum yield of 23.6 % can be obtained without the need for additional steps. A comprehensive analysis of the mechanism has demonstrated that H 2 O 2 is capable of converting S x 2− ions generated in the S-EDA solution into zero-valent sulfur atoms through oxidation. The obtained SQDs can be utilized as a fluorescent probe for detection of tetracycline (TC) and Ca2+ ions with the limit of detection (LOD) of 0.137 μM and 0.386 μM respectively. Moreover, we have developed a sensitive logic gate sensor based on SQDs, harnessing the activated cascade effect to create an intelligent probe for monitoring trace levels of TC and Ca2+ ions. This paper not only presents a viable approach for ultrafast and scalable synthesis of SQDs at room temperature, but also contributes to the efficient utilization of elemental sulfur resources. [ABSTRACT FROM AUTHOR]

Networks throughout physics and biology leverage spatiotemporal dynamics for computation. However, the connection between structure and computation remains unclear. Here, we study a complex-valued neural network (cv-NN) with linear interactions and phase-delays. We report the cv-NN displays sophisticated spatiotemporal dynamics, which we then use, in combination with a nonlinear readout, for computation. The cv-NN can instantiate dynamics-based logic gates, encode short-term memories, and mediate secure message passing through a combination of interactions and phase-delays. The computations in this system can be fully described in an exact, closed-form mathematical expression. Finally, using direct intracellular recordings of neurons in slices from neocortex, we demonstrate that computations in the cv-NN are decodable by living biological neurons as the nonlinear readout. These results demonstrate that complex-valued linear systems can perform sophisticated computations, while also being exactly solvable. Taken together, these results open future avenues for design of highly adaptable, bio-hybrid computing systems that can interface seamlessly with other neural networks. Neural networks perform computations through finely tuned patterns of connections, but it remains unclear how these connections lead to specific computations. Here, the authors introduce a neural network that can perform computations while also being mathematically solvable, providing new insights into the link from connections to computation. [ABSTRACT FROM AUTHOR]

The logic circuit is the main component of an integrated circuit chip that dictates the operation and performance of the chip. The logic circuit based on a memristor can improve the integration and operation speed of the existing integrated circuit and reduce the chip size and the number of devices used by a single logic circuit. However, most of the research on logic circuits based on memristors has focused only on simulations, and research on the realization of logic circuits by hardware using actual memristors is limited. In this paper, a memristor based on graphene oxide with stable complementary resistive switching characteristics is fabricated, a logic circuit is built by using this device, and the logic functions of "IMP," "AND," and "NOR" are successfully realized. The complementary resistive switching device can alleviate the severe power loss caused by the memory separation of the von Neumann architecture. Moreover, its unique structure enables it to realize material logic independently without the use of multiple memristors and resistors, providing a new scheme for the physical realization of logic circuits. It also opens up a new path for integrated chips to break through von Neumann architecture. [ABSTRACT FROM AUTHOR]

DNA is commonly employed as a substrate for the building of artificial logic networks due to its excellent biocompatibility and programmability. Till now, DNA logic circuits are rapidly evolving to accomplish advanced operations. Nonetheless, nowadays, most DNA circuits remain to be disposable and lack of field programmability and thereby limits their practicability. Herein, inspired by the Configurable Logic Block (CLB), the CLB‐based erasable field‐programmable DNA circuit that uses clip strands as its operation‐controlling signals is presented. It enables users to realize diverse functions with limited hardware. CLB‐based basic logic gates (OR and AND) are first constructed and demonstrated their erasability and field programmability. Furthermore, by adding the appropriate operation‐controlling strands, multiple rounds of programming are achieved among five different logic operations on a two‐layer circuit. Subsequently, a circuit is successfully built to implement two fundamental binary calculators: half‐adder and half‐subtractor, proving that the design can imitate silicon‐based binary circuits. Finally, a comprehensive CLB‐based circuit is built that enables multiple rounds of switch among seven different logic operations including half‐adding and half‐subtracting. Overall, the CLB‐based erasable field‐programmable circuit immensely enhances their practicability. It is believed that design can be widely used in DNA logic networks due to its efficiency and convenience. [ABSTRACT FROM AUTHOR]

This study reports on the first all‐printed vertically stacked organic electrochemical transistors (OECTs) operating in accumulation mode; the devices, relying on poly([4,4′‐bis(2‐(2‐(2‐methoxyethoxy)ethoxy)ethoxy)‐2,2′‐bithiophen‐5,5′‐diyl]‐alt‐[thieno[3,2‐b]thiophene‐2,5‐diyl]) (pgBTTT) as the active channel material, are fabricated via a combination of screen and inkjet printing technologies. The resulting OECTs (W/L ≈5) demonstrate good switching performance; gm, norm ≈13 mS cm−1, µC* ≈21 F cm−1 V−1 s−1, ON–OFF ratio > 104 and good cycling stability upon continuous operation for 2 h. The inkjet printing process of pgBTTT is established by first solubilizing the polymer in dihydrolevoglucosenone (Cyrene), a non‐toxic, cellulose‐derived, and biodegradable solvent. The resulting ink formulations exhibit good jettability, thereby providing reproducible and stable p‐type accumulation mode all‐printed OECTs with high performance. Besides the environmental and safety benefits of this solvent, this study also demonstrates the assessment of how the solvent affects the performance of spin‐coated OECTs, which justifies the choice of Cyrene as an alternative to commonly used harmful solvents such as chloroform, also from a device perspective. Hence, this approach shows a new possibility of obtaining more sustainable printed electronic devices, which will eventually result in all‐printed OECT‐based logic circuits operating in complementary mode. [ABSTRACT FROM AUTHOR]

In the era of the highly pervasive Internet of Things (IoT), the optimized implementation of lightweight cryptographic algorithms for protecting data security has extensively received attention, for instance, the Piccolo cipher. Piccolo is an ultra‐lightweight block cipher designed for extremely resource‐constrained devices. Currently, many optimized implementations of Piccolo have been proposed; however, these implementations are heavily rely on optimizing different architectures. Actually, these implementation schemes have all neglected the optimization of the core components. How to achieve the new optimized implementation of the Piccolo cipher (via both the architectures and the core components) appears to be an interesting problem. In this article, new circuit structures for components (key schedules and round functions) of the Piccolo are first proposed using fewer logic gates. Based on these circuit structures, three architectures (iterative, integrated iterative, and scalar) are proposed to maximize implementation performances. To demonstrate their effectiveness and practicality, these architectures are simulated and synthesized on different field‐programmable gate arrays (FPGA) devices. Compared with the existing architectures of Piccolo, the results indicate that the iterative architectures and the integrated iterative architecture provide a better trade‐off between area and throughput, and the scalar architectures provide the highest throughput. Especially for Piccolo‐128, the area of its iterative architecture is 30 look‐up tables (LUTs) and 22 slices less than the best known implementation; the throughput and efficiency are 68.56% higher and twice higher than the best known implementation, respectively. Compared with other block ciphers, the efficiency and area‐delay product of the Piccolo‐128 iterative architecture outperform PRESENT, GIFT, SIMON, Midori, SIMON, and SIMECK. Compared with the best results, its encryption efficiency has increased by 31.53%, and the area‐delay product has decreased by 44.63%. [ABSTRACT FROM AUTHOR]

The object of research are models of optimal logic circuits based on universal Peirce-Webb functions. The problem solved is the efficiency of the technique for simplifying the Peirce-Webb functions. The extension of the non-standard system to the simplification of Peirce-Webb functions makes it possible to discover new rules of equivalent transformations of Boolean functions, and to complete the simplification procedure in one step. A feature of the simplification of functions in the Peirce-Webb basis by a non-standard system is fixing the digital project at the level of abstraction, followed by the application of the mechanism of logical synthesis to generate the corresponding equivalent at the level of gates of the logic circuit. The result of the transformation of the terms of the binary matrix in the end is some combinatorial system, metadata that can explain other data, for example, determine the minimum function for another logical basis. The interpretation of the result consists in the use of combinatorial properties of binary structures of functions in the Peirce-Webb basis and binary structures of functions in the basic basis. These properties do not depend on the selected logical basis, which makes it possible to carry out equivalent transformations on binary matrices of Peirce-Webb functions according to the rules of the algebra of the main basis. It has been experimentally confirmed that a nonstandard system enables: – to reduce the algorithmic complexity of simplifying the Peirce-Webb functions; – to increase the performance of the simplification of Peirce-Webb functions by 200–300 %; – to demonstrate the visibility of the process of simplifying functions. In terms of application, the non-standard system of simplifying the Peirce-Webb functions could ensure the transfer of innovations to material production: from conducting fundamental research, expanding the capabilities of digital component design technology to organizing serial or mass production of novelties [ABSTRACT FROM AUTHOR]

Computational technologies based on coupled oscillators are of great interest for energy efficient computing. A key to developing such technologies is the tunable control of the interaction among oscillators which today is accomplished by additional electronic components. Here we show that the synchronization of closely spaced vanadium dioxide (VO2) oscillators can be controlled via a simple thermal triggering element that itself is formed from VO2. The net energy consumed by the oscillators is lower during thermal coupling compared with the situation where they are oscillating independently. As the size of the oscillator shrinks from 6 μm to 200 nm both the energy efficiency and the oscillator frequency increases. Based on such oscillators with active tuning, we demonstrate AND, NAND, and NOR logic gates and various firing patterns that mimic the behavior of spiking neurons. Our findings demonstrate an innovative approach towards computational techniques based on networks of thermally coupled oscillators. The tunable control of the interaction among oscillators usually requires additional electronic components. Here, Li et al. show that the thermal coupling synchronizes neighboring VO2 oscillators without any extra electronic components, reducing the energy consumption. [ABSTRACT FROM AUTHOR]