292 results on '"Kwon, Sang Jik"'
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102. Effect of Laser Scanning Speed on the Laser Direct Patterning of T-shaped Indium Tin Oxide (ITO) Electrode for High Luminous AC Plasma Display Panels
103. ITO Wet Etch Properties by Various Moving Modes of Substrate in an In-Line Wet Etch/Cleaning System
104. Analysis on the Photocurrent in a-Si:H Thin Film Transistor in Terms of Spectral Characteristics of CCFL Backlight
105. Field emission properties of silicon field emitter arrays with volcano-shaped gate structure
106. Photoelectric Effects on the Photocurrent of an a-Si:H Thin Film Transistor due to the Spectral Properties of Backlight Sources
107. Characteristics of Photo Leakage Currents of a-Si:H TFT Caused by the Illuminations from CCFL and White LED Backlight
108. The Analysis of Memory Margin of an Alternative Current-Plasma Display Panel with K-Ion-Doped MgO
109. Anin-situStudy on Discharging Characteristics of an Alternative Current Plasma Display Panel Varied with Discharging Space
110. Improvement in the setup of the inline sputter system and the ITO sputtering process by measuring and controlling the base vacuum level
111. A Study on Discharge Characteristics of the PDP Packaged with In-situ Vacuum Sealing with the MgO Protective Layer Deposited by Optimal Evaporation Rate
112. Patterning Properties of Indium–Tin Oxide Layer Depending on the Irradiation Conditions of Nd:YVO4Laser Beam
113. Effects of Spectral Characteristics of Backlight Sources on Photo-Leakage Currents of Hydrogenated Amorphous Silicon Thin Film Transistor
114. ITO Wet Etch Properties in an In-line Wet Etch/Cleaning System by using an Alternating Movement of Substrate
115. Application of Anisotropic Conductive Film to Fabrication of Molybdenum Field Emitter Arrays Using Transfer Mold Technique
116. Analysis of Charge Transfer Mechanism in Molecular Memory Device using Temperature-dependent Electrical Measurement
117. A Study on the MgO Protective Layer Deposited by Oxygen-Neutral-Beam-Assisted Deposition in AC PDP
118. Characteristics of Magnesium Oxide Deposited by Oxygen Neutral-Beam-Assisted Deposition in AC Plasma Display Panel
119. A Study on Removal of Shoulders at Laser Ablated Indium Tin Oxide Film Edge
120. Enhancement of Electron Field Emission from Density-Controlled Carbon Nanotubes
121. Luminescence Characteristics of ZnGa2O4Thick Film Doped with Mn2+and Cr3+at Various Sintering Temperatures
122. Structural and Discharge Characteristics of MgO Deposited by Oxygen-Ion-Beam-Assisted Deposition in AC PDP
123. Effects on Field Emission Characteristics of Ar Ion Bombardment for Screen-Printed Carbon Nanotube Emitters
124. The Effectof Li-Ion-Doped Porous MgO Film on Operational Memory Margin of ac-Plasma Display Panel
125. Laser Direct Patterning of Indium Tin Oxide Layer for Plasma Display Panel Bus Electrode
126. The Analysis of the Discharging Characteristics and MgO protective layer by MgO Evaporation Rates for High-Efficiency PDP
127. Analysis on the Defects in the Molecular Structures of MgO Films Deposited with Different Evaporation Rates in AC Plasma Display Panels
128. A Study on the Surface Treatment of CNT Paste Emitter by Ar Ion Irradiation
129. Structural and Discharge Characteristics of Magnesium Oxide Deposited by Oxygen-Ion-Beam-Assisted Deposition
130. Material Properties and Plasma Display Panel Discharging Characteristics Depending on MgO Evaporation Rate
131. Fabrication of CNT FEA Self-aligned between Gate and Emitter using Screen Printing Method
132. Effect of Base Vacuum Level on Plasma Display Panel Discharge Characteristics and Efficacy
133. Field Emission Characteristics Depending on Emitter Patterns of A Screen-Printed Carbon Nanotube Field Emission Array
134. Effect of Precursor-Pulse on Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition
135. 20.2: Dependence of the Discharge Characteristics and Efficacy on the Base Vacuum Level for High-Efficiency PDP Panels Made Using an In-Vacuum Sealing-Pumping System
136. Effects of base vacuum level on discharge characteristics in vacuum in‐line sealing process for high efficient PDP
137. Characterization of triode‐type CNT‐FED fabricated using Photo‐sensitive CNT Paste
138. P-53: Vacuum In-Line Sealed CNT-FED Fabricated by A Screen-printing of Photo-sensitive CNT Paste
139. Effect of Plasma Pretreatment on the Structure and Emission Characteristics of Carbon Nanotubes
140. Variation in the Properties of ZnO:Al Films Grown by using Atomic Layer Deposition with the Precursor-Pulse Ratio
141. Plasma display panel vacuum in-line sealing technology by using a bubble-reduced frit
142. Vacuum in‐line sealing technology of the screen‐printed CNT‐FEA
143. Characterization of PDP performance prepared by vacuum in‐line sealing technology
144. P-32: Vacuum In-Line Sealing Technology with Auxiliary Heating Line for PDP Packaging
145. Fabrication of triode diamond field emitter arrays on glass substrate by anisotropic conductive film bonding
146. Influence of getter activation and aging in a frit-sealed field emission display panel
147. Cathodoluminescent Characteristics of a Spherical Y[sub 2]O[sub 3]:Eu Phosphor Screen for Field Emission Display Application
148. Low Frequency Noise Characteristics on Al/Nb 2 O 5 /p-type Schottky Diode Fabricated by Pulsed DC Magnetron Sputtering.
149. Aging Effects in a 0.7ʺ FED Panel System Build-Up
150. Field emission properties of the polycrystalline diamond film prepared by microwave-assisted plasma chemical vapor deposition
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