101. Nanolithography on hydrogen terminateed silicon by scanning probe microscopy
- Author
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Schönenberger, Christian, Kramer, Niels, Kramer, N., and Physics of Interfaces and Nanomaterials
- Subjects
Amorphous silicon ,Materials science ,Lithography ,Silicon ,STM ,chemistry.chemical_element ,IR-72936 ,Nanotechnology ,Etch mask ,Nanofabrication ,chemistry.chemical_compound ,Scanning probe microscopy ,Electronic device ,Etching (microfabrication) ,SFM ,Device ,Resist ,Electrical and Electronic Engineering ,Mask ,Condensed Matter Physics ,METIS-128939 ,Atomic and Molecular Physics, and Optics ,Electron Beam Lithography ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Nanostructures ,Scanning-probe microscope (SPM) ,Nanolithography ,chemistry ,Etching ,Pattern transfer ,Electron-beam lithography - Abstract
Scanning-probe microscopes (SPM), i.e. the scanning-tunneling and force microscopes, can be used to locally oxidize hydrogen-terminated silicon and hydrogenated amorphous silicon. Because of its reliability and potential for pattern transfer, this lithography process has found great attention and has become a prototype process for SPM nanolithography. The local oxidization can be performed in ambient or ultra-high vacuum (UHV), and it is initiated by strong electric fields, electron impact, or by short-wavelength light. In this article, the progress of this subfield of nanolithography is reviewed. Emphasis will be on the process conducted in humid environments were a fairly solid understanding is emerging. For completeness, important experiments performed in UHV will be discussed briefly. Finally, recent applications of this process technique to the fabrication of electronic devices will be presented.
- Published
- 1996