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101. Integration of high performance silicon optical modulators

102. Modulator integration in high-performance BiCMOS

108. Silicon optical modulators for integrated transceivers

109. Options for Silicon Based Modulators

114. Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads

116. RF-MEMS switch module in a 0.25 μm BiCMOS technology

122. BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique

123. SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

127. BEOL embedded RF-MEMS switch for mm-wave applications

128. A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

130. SiGe HBT module with 2.5 ps gate delay

133. SiGe BiCMOS Technology with 3.0 ps Gate Delay

141. A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process

150. Embedded MEMS modules for BiCMOS process.

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