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NISQ era devices suffer from a number of challenges like limited qubit connectivity, short coherence times and sizable gate error rates. Thus, quantum algorithms are desired that require shallow circuit depths and low qubit counts to take advantage of these devices. We attempt to realize this with the help of classical quantum chemical theories of canonical transformation and explicit correlation. In this work, compact ab initio Hamiltonians are generated classically through an approximate similarity transformation of the Hamiltonian with a) an explicitly correlated two-body unitary operator with generalized pair excitations that remove the Coulombic electron-electron singularities from the Hamiltonian and b) a unitary one-body operator to efficiently capture the orbital relaxation effects required for accurate description of the excited states. The resulting transcorelated Hamiltonians are able to describe both ground and excited states of molecular systems in a balanced manner. Using the fermionic-ADAPT-VQE method based on the unitary coupled cluster with singles and doubles (UCCSD) ansatz and only a minimal basis set (ANO-RCC-MB), we demonstrate that the transcorrelated Hamiltonians can produce ground state energies comparable to the much larger cc-pVTZ basis. This leads to a potential reduction in the number of required CNOT gates by more than three orders of magnitude for the chemical species studied in this work. Furthermore, using the qEOM formalism in conjunction with the transcorrelated Hamiltonian, we reduce the errors in excitation energies by an order of magnitude. The transcorrelated Hamiltonians developed here are Hermitian and contain only one- and two-body interaction terms and thus can be easily combined with any quantum algorithm for accurate electronic structure simulations.

Data augmentation is an important component in the robustness evaluation of models in natural language processing (NLP) and in enhancing the diversity of the data they are trained on. In this paper, we present NL-Augmenter, a new participatory Python-based natural language augmentation framework which supports the creation of both transformations (modifications to the data) and filters (data splits according to specific features). We describe the framework and an initial set of 117 transformations and 23 filters for a variety of natural language tasks. We demonstrate the efficacy of NL-Augmenter by using several of its transformations to analyze the robustness of popular natural language models. The infrastructure, datacards and robustness analysis results are available publicly on the NL-Augmenter repository (https://github.com/GEM-benchmark/NL-Augmenter)., Comment: 39 pages, repository at https://github.com/GEM-benchmark/NL-Augmenter

Oxide thermoelectrics are exciting due to their chemical and thermal stability at high temperatures. However, the efficacy of these materials are limited by poor figure of merit (zT). In this study, the role of Sr and Mn co-substitution on the thermoelectric properties of NdCoO3 (Nd_{1-x}Sr_xCo_{1-y}Mn_yO_3; 0.00 \leq x \leq 0.10; 0.00 \leq y \leq 0.10) is investigated. The Seebeck coefficient decreases with single Sr substitution at Nd site; however, the Sr and Mn co-substitution enhances the Seebeck coefficient compared to single Sr substitution and is attributed to the localization effect. Sr substitution at La site creates hole in the system and results in enhanced electrical conductivity ({\sigma}); however, {\sigma} reduces with Mn substitution at Co site in NdCoO_3. A reduced thermal conductivity for the co-substituted samples is observed and attributed to decrease in phonon thermal conductivity. Simultaneous optimization of TE parameters results in improved zT \sim 0.038 for Nd_{0.95}Sr_{0.05}Co_{0.95}Mn_{0.05}O_3 at 540 K., Comment: 9 Pages, 5 Figures, 1 Table

The preparation of composite materials is promising for concurrent optimization of electrical and thermal transport properties to realize an improved thermoelectric (TE) performance. We report the effect of work function and acoustic impedance mismatch (AIM) on the TE properties of (1-z)Ge0.87Mn0.05Sb0.08Te/(z)WC composite. In particular, a composite consisting of Mn and Sb co-doped GeTe as a matrix and WC as a dispersed phase is prepared, and its structural and TE properties are investigated. The simultaneous increase in electrical conductivity ({\sigma}) and Seebeck coefficient ({\alpha}) with WC volume fraction (z) results in an enhanced power factor ({\alpha}^2{\sigma}) in the composite. The rise in {\sigma} is attributed to increased carrier mobility in the composite. This is further established from the work function measurement using the Kelvin probe force microscopy (KPFM) technique and is also supported by the density functional theory (DFT) calculations. The difference in elastic properties (sound velocity) between Ge0.87Mn0.05Sb0.08Te and WC results in a high AIM that leads to a large interface thermal resistance (Rint) between the phases. The correlation between Rint and the Kapitza radius results in reduced phonon thermal conductivity (\kappa_ph) of the composite and is discussed using the Bruggeman asymmetrical model. The decrease in \kappa_{ph} is further established using phonon dispersion calculations that indicates the decrease in phonon group velocity in the composite. The simultaneous effect of enhanced {\alpha}^2{\sigma} and reduced \kappa_ph results in a maximum figure of merit (zT) of 1.93 at 773K for (1-z)Ge0.87Mn0.05Sb0.08Te/(z)WC composite having z=0.010. This study shows promise to achieve higher zTav across a wide range of composite materials having similar electronic structure and different elastic properties., Comment: 23 Pages, 9 Figures, 1 Table

This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density., Comment: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][ECSEL Joint Undertaking (JU)][UltimateGaN][grant agreement No 826392]

The possibility of using quantum computers for electronic structure calculations has opened up a promising avenue for computational chemistry. Towards this direction, numerous algorithmic advances have been made in the last five years. The potential of quantum annealers, which are the prototypes of adiabatic quantum computers, is yet to be fully explored. In this work, we demonstrate the use of a D-Wave quantum annealer for the calculation of excited electronic states of molecular systems. These simulations play an important role in a number of areas, such as photovoltaics, semiconductor technology and nanoscience. The excited states are treated using two methods, time-dependent Hartree-Fock (TDHF) and time-dependent density-functional theory (TDDFT), both within a commonly used Tamm-Dancoff approximation (TDA). The resulting TDA eigenvalue equations are solved on a D-Wave quantum annealer using the Quantum Annealer Eigensolver (QAE), developed previously. The method is shown to reproduce a typical basis set convergence on the example H$_2$ molecule and is also applied to several other molecular species. Characteristic properties such as transition dipole moments and oscillator strengths are computed as well. Three potential energy profiles for excited states are computed for NH$_3$ as a function of the molecular geometry. Similar to previous studies, the accuracy of the method is dependent on the accuracy of the intermediate meta-heuristic software called qbsolv., Comment: 17 pages, 2 figures, 14 pages of Supplemental Material

A $\sigma$-ideal $\cal{I}$ on a set $X$ is supersaturated if for every family $\cal{F}$ of $\cal{I}$-positive sets with $|\cal{F}| < \mathrm{add}(\cal{I})$, there exists a countable set that meets every set in $\cal{F}$. We show that many well-known ccc forcings preserve supersaturation. We also show that the existence of supersaturated ideals is independent of ZFC plus "There exists an $\omega_1$-saturated $\sigma$-ideal"., Comment: 11 pages, submitted