258 results on '"Jones, K.S."'
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102. Studies of point defect/dislocation loop interaction processes in silicon
103. The Effects of Rapid Recrystallization and Ion Implanted Carbon on The Solid Phase Epitaxial Regrowth of Si1−xGex Alloy Layers On Silicon
104. Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon
105. Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD
106. Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature
107. Dopants, Defects, Clusters: A Process Modelling Taxonomy.
108. MOCVD growth of non-epitaxial and epitaxial ZnS thin films
109. Defects and Diffusion in Si+ Implanted GaAs
110. Time Dependent Diffusion of P-Type Dopants in Gallium Arsenide
111. The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in Gallium Arsenide.
112. Tem Analysis of Interfacial Reactions Between TiWn, Wn Gate Metallizations and GaAs in Mesfet Devices
113. Retroviral integrase functions as a multimer and can turn over catalytically.
114. Energy dependence of transient-enhanced-diffusion in low energy high dose arsenic implants in silicon.
115. Transient enhanced diffusion and defect studies in B implanted Si.
116. The effect of end of range loops on transient enhanced diffusion in Si.
117. The effects of strain on dopant diffusion in silicon.
118. A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors.
119. Predictive simulation of transient activation processes in boron-doped silicon structures.
120. Can recoil distribution models account for end-of-range damage?
121. Amorphization of elemental and compound semiconductors upon ion implantation
122. Raman Studies of Znse Lattice Damage and Recovery Due to N Implantation and Annealing
123. Brain-computer interfaces based on the steady-state visual-evoked response.
124. The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealing.
125. The effects of gamma irradiation versus white cell reduction on the mixed lymphocyte reaction.
126. Further Portrait of a Psycho-Geriatric Hostel.
127. AN ENQUIRY INTO SOME ASPECTS OF RELIGION IN RELATION TO PSYCHIATRY.
128. Prospective analysis of hip arthroscopy with 2-year follow-up
129. Natural Language Access to Databases: Some Questions and a Specific Approach
130. Evolution of {311} type defects in boron-doped structures: Experimental evidence of...
131. Effect of the end-of-range loop layer depth on the evolution of {311} defects.
132. Low-dislocation-density silicon-on-insulator material produced by sequential oxygen implantation....
133. Using doping superlattices to study transient-enhanced diffusion of boron in regrown silicon.
134. Point defects in Si after formation of a TiSi[sub 2] film: Evidence for vacancy supersaturation....
135. Transient enhanced diffusion without {311} defects in low energy B[sup +]-implanted silicon.
136. Kinetics of solid phase epitaxial regrowth in amorphized Si[sub 0.88]Ge[sub 0.12] measured by....
137. Highly stable silicon dioxide films deposited by means of rapid thermal low-pressure chemical....
138. GaAs/AlGaAs quantum well and modulation-doped heterostructures grown by organometallic vapor....
139. High-purity lnP grown on Si by organometallic vapor phase epitaxy.
140. Low-Energy Implantation of Si and Sn into GaAs
141. Ion-beam-induced intermixing of WSi0.45 and GaAs
142. Boron diffusion upon annealing of laser thermal processed silicon
143. A new model for {311} defects based on in situ measurements
144. The role of extended defects on the formation of ultra-shallow junctions in ion implanted /sup 11/B/sup +/, /sup 49/BF/sub 2/, /sup 75/As/sup +/ and /sup 31/P/sup +/
145. Co-implantation of boron and fluorine in silicon
146. Modeling the nucleation and evolution of end of range dislocation loops in silicon
147. Effect of varying implant energy and dose on the SIMOX microstructure
148. The role of fluorine on reducing TED in boron implanted silicon
149. The chemical effect of fluorine on boron transient enhanced diffusion
150. Fluorine effect on boron diffusion: chemical or damage?
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