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The electron-induced L₃M two-step double ionization cross sections of metallic Pd were determined experimentally for incident electron beam energies ranging from the double ionization threshold up to 18 keV. The double L₃M ionization cross sections were derived from the intensity ratios (ILαM:ILα) of the resolved M satellites to the parent diagram lines. The sample was bombarded with monoenergetic electrons from an energy-tunable 20-kV electron gun. The diagram and M-satellite x-ray lines were measured by means of high-resolution x-ray spectroscopy, using a reflection-type von Hamos bent crystal spectrometer. The two-step partial cross sections were determined by subtracting from the measured total double ionization cross sections the contributions due to the shake process and L₁-L₃M4,5 Coster-Kronig transitions. Despite the thick target employed in the present study, the dependence of the two-step cross sections on the incoming electron energy could be derived using a target slice decomposition method. It is shown that the obtained energy dependence can be well reproduced by the semiempirical parametrization model of Pattard and Rost.

The multiple ionization of the L- and M-shells of Pd by fast oxygen ions has been studied by measuring with high-resolution the satellite structures of the Lα1,2 X-ray transitions. Relativistic multi-configuration Dirac-Fock (MCDF) calculations were used to interpret the complex X-ray spectrum, allowing to derive the number of L- and M-shell spectator vacancies at the moment of the X-ray emission. After correcting these numbers for the atomic vacancy rearrangement processes that take place prior to the X-ray emission, the ionization probabilities corresponding to the collision time were obtained. The latter were compared to predictions of the semiclassical approximation (SCA) and the geometrical model. The SCA calculations were performed using relativistic hydrogenic and self-consistent Dirac-Hartree-Fock (DHF) electronic wave functions. It was found that the use of the more realistic DHF wave functions in the SCA calculations leads to a much better description of the measured ionization probabilities for both the L- and M-shells.

The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10¹⁶ atoms/cm² in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-Kα X-ray fluorescence line with nanometer-scale precision. The experimental results were compared to theoretical predictions of the depth distributions resulting from ion implantation. A good agreement between experiment and theory was found which proved that the presented high-resolution grazing emission X-ray fluorescence technique is well suited to perform depth profiling measurements of impurities located within the extinction depth, provided the overall shape of the distribution can be assumed a priori.

The interpretation of L-shell satellites and hypersatellites for Lα1,2 (L₃→M4,5) and Lβ₁ (L₂→M₄) x-ray transitions in zirconium multiply ionized by oxygen and neon ions is reported. The x-ray spectra were measured with a high-resolution von Hamos spectrometer and interpreted in terms the relativistic multi-configuration Dirac-Fock (MCDF) calculations. The ionization probabilities of L- and M-shell derived from the data are compared with the predictions of the semiclassical approximation (SCA) calculations.

The xenon L-subshell Coster-Kronig (CK) transition yields were revisited via high-resolution measurements of the Lα1,2 (L₃-M4,5) and Lβ₁ (L₂-M₄) x-ray emission lines. The L x-ray spectra were measured employing a Johansson-type curved crystal spectrometer and energy-tunable synchrotron radiation. The CK yields were derived from the relative L x-ray intensity jumps at the L edges by fitting the fluorescence intensities as a function of the photon energy to the L-subshell photoionization cross sections. The latter were obtained from the measured L-edge photoabsorption spectrum. Values of 0.118±0.029, 0.383±0.037, and 0.096±0.016 were found for the f₂₃, f₁₃, and f₁₂ CK yields, respectively. Thanks to high resolution, the L₁ fluorescence yield of 0.059±0.002 was also determined from intensity ratios of the well-resolved Lβ₄ (L₁-M₂) and Lβ₁ (L₂-M₄) lines.

We demonstrate that ultralow-level Al impurities on a silicon surface can be measured by using the high-resolution grazing emission x-ray fluorescence (GEXRF) technique combined with synchrotron-radiation excitation. An Al-impurity level of about 10¹² atoms/cm² was reached by observing the Al Kα x-ray fluorescence in the resonant Raman-scattering background-“free” regime by choosing an appropriate beam energy below the Si K absorption edge. Present results show that by combining the GEXRF method with the vapor phase decomposition technique the 10⁷ atoms/cm² level can be reached for Al detection on silicon. Finally, we found that the high-resolution GEXRF technique is a sensitive tool to study the morphology of surface nanostructures.

A twin crystal-spectrometer assembly, operated in the focusing compensated asymmetric Laue geometry has been developed for accurate spectroscopy of fast highly charged heavy ions in the hard-X-ray region. Coupled to the focusing crystal optics is a specially developed two-dimensional position-sensitive X-ray detector which is necessary for retaining spectral resolution also for fast moving sources. We summarize the crystal optics and demonstrate the usefulness of the instrument for spectroscopy of both stationary and fast moving X-ray sources. Results are reported from several tests employing a ¹⁶⁹Yb gamma-ray source and the Lyman radiation of one-electron Pb⁸¹⁺ ions traveling at a velocity corresponding to β ≡ v/c ≈ 0.59. The features of the instrument presented may be useful in many applications where it appears difficult to make the leap from conventional X-ray energy measurements to wavelength-dispersive spectroscopy based on crystal optics.

We report on the investigation of the photon energy dependence of double 1s photoionization of light atoms and compare the cross sections for hollow atom and He-like ion production. Measurements of the Kα hypersatellite x-ray spectra of Mg, Al, and Si were carried out using the Fribourg high-resolution x-ray spectrometer installed at the ID21 and ID26 beam lines at the ESRF. The double-to-single photoionization cross section ratios were derived as a function of the incident photon beam energy and compared to convergent close-coupling (CCC) calculations for He-like ions. The dynamical electron-electron scattering contribution to the DPI cross-sections was found to be more important for neutral atoms than for the He isoelectronic series.

This paper reports on the investigation of the double K-shell ionization of metallic aluminum induced by photon and electron impact. The experimental method consisted to measure the Kα hypersatellite spectra resulting from the radiative decay of double 1s vacancy states by means of high-resolution x-ray spectroscopy using a Bragg-type von Hamos crystal spectrometer. Measurements of the photon-induced spectra were carried out at the European Synchrotron Radiation Facility, Grenoble, France, while those of the electron-induced spectra were performed at the University of Fribourg. The double 1s ionization probabilities and cross sections were derived from the Kα₂ hypersatellite to diagram line intensity ratios for photon beam energies ranging between 3.1 and 5.5 keV and for different incident electron-beam energies ranging between 4 and 20 keV. The energy and linewidth of the Kα₂ hypersatellite x-ray line were also determined for which consistent results were obtained from the photon and electron-beam measurements.

High-resolution x-ray measurements were performed with a von Hamos-type bent crystal spectrometer using for the detection of the diffracted photons either a back- illuminated charge-coupled device (CCD) camera or a front-illuminated one. For each CCD the main x-ray emission lines (e.g., Kα, Kβ, Lα, and Lβ) of a variety of elements were measured in order to probe the performances of the two detectors between 1 and 18 keV. From the observed x-ray lines the linearity of the energy response, the noise level, the energy resolution, and the quantum efficiency ratio of the two CCDs were determined.

K-X-ray spectra of Zr, Nb, Mo and Pd targets bombarded with 250 MeV carbon and 360 MeV oxygen ions are studied with high resolution diffraction spectrometry. Relative yields and natural widths of the Khα1,2 hypersatellite lines are determined and compared with those of the diagram lines. The widths of Khα1,2 lines are compared with the new phenomenological formula which takes into account the retardation of the Khα₁ transition in the LS coupling scheme. The data significantly exceed the expected values. Deduced lifetimes of the double K-hole states are shorter than expected.

We demonstrate that in order to interpret the x-ray satellite structure of Pd Lα1,2(L₃M4,5) transitions excited by fast O ions, which was measured using a high-resolution von Hamos crystal spectrometer, the vacancy rearrangement processes, taking place prior to the x-ray emission, have to be taken into account. The measured spectra were compared with the predictions of the multi- con.guration Dirac-Fock (MCDF) calculations using the fluorescence and Coster- Kronig yields which were modiffed due to a reduced number of electrons available for relaxation processes and the effect of closing the Coster-Kronig transitions. We demonstrate that the vacancy rearrangement processes can be described in terms of the rearrangement factor, which can be calculated by solving the system of rate equations modelling the flow of vacancies in the multiply ionized atom. By using this factor, the ionization probability at the moment of collision can be extracted from the measured intensity distribution of x-ray satellites. The present results support the independent electron picture of multiple ionization and indicate the importance of use of Dirac-Hartree-Fock wave functions to calculate the ionization probabilities.

The potential of valence to core Al X-ray emission spectroscopy to determine aluminum distribution in ferrierite zeolites was investigated. The recorded emission spectra of four samples prepared with different structure directing agents exhibit slight variations in the position of the main emission peak and the intensity of its low energy shoulder. Theoretical calculations indicate that an increased intensity of the Kβx shoulder in the Al emission spectra can be linked to a predominant occupation of the T3 site by a single aluminum atom. This study thus suggests that valence to core X- ray emission spectroscopy can be applied to help determine the occupation of aluminum at crystallographic T-sites in zeolites.

In the present work high energy resolution off-resonant X-ray spectroscopy (HEROS) was employed at a synchrotron to study a silica supported Ta(V) bisalkyl catalyst activated in hydrogen. The Ta Lα1 HEROS spectra were measured during oxidation of the starting complex and the relative species’ concentration was successfully retrieved as a function of time using the fingerprint HEROS spectra measured for the unoxidized and the oxidized catalyst. Based on the experimental data and theory- based calculations, it was shown that oxidation of the active Ta catalyst leads to the formation of mono- and di-meric species on the SiO2 surface. The obtained results were compared to those of the previously reported time-resolved HEROS study on an inactive silica supported Ta(V) bisalkyl catalyst’s concentration evolution during its oxidation Błachucki et al. (2015). The study allowed observation of an immediate transition of the active Ta catalyst from its unoxidized form to the oxidized one. This finding is dissimilar to the result of the study on the inactive Ta catalyst, where the oxidation led through an intermediate step.

We report on novel reference-free methods to determine the instrumental resolution of transmission-type bent crystal spectrometers. The novel methods are based on the measurements of a selected X-ray line in several orders of diffraction. It is shown that the angular broadening of the spectrometer and the natural linewidth of the selected transition can be obtained directly from the novel methods. No reference X-ray line or γ-ray line is needed. The precision of the results is about 10 times better than the one obtained with the standard method consisting of measuring a reference X-ray line and keeping fixed in the fit the natural width of this line at the value taken from available databases. The novel methods are illustrated for a DuMond-type bent crystal spectrometer with the Kα1 X-ray line of Gd measured in the first five orders of diffraction.

Physical, biological, and chemical transformations are initiated by changes in the electronic configuration of the species involved. These electronic changes occur on the timescales of attoseconds (10−18 s) to femtoseconds (10−15 s) and drive all subsequent electronic reorganization as the system moves to a new equilibrium or quasi-equilibrium state. The ability to detect the dynamics of these electronic changes is crucial for understanding the potential energy surfaces upon which chemical and biological reactions take place. Here, we report on the determination of the electronic structure of matter using a single self-seeded femtosecond x-ray pulse from the Linac Coherent Light Source hard x-ray free electron laser. By measuring the high energy resolution off-resonant spectrum (HEROS), we were able to obtain information about the electronic density of states with a single femtosecond x-ray pulse. We show that the unoccupied electronic states of the scattering atom may be determined on a shot-to-shot basis and that the measured spectral shape is independent of the large intensity fluctuations of the incoming x-ray beam. Moreover, we demonstrate the chemical sensitivity and single-shot capability and limitations of HEROS, which enables the technique to track the electronic structural dynamics in matter on femtosecond time scales, making it an ideal probe technique for time-resolved X-ray experiments.

Physical, biological, and chemical transformations are initiated by changes in the electronic configuration of the species involved. These electronic changes occur on the timescales of attoseconds (10−18 s) to femtoseconds (10−15 s) and drive all subsequent electronic reorganization as the system moves to a new equilibrium or quasi-equilibrium state. The ability to detect the dynamics of these electronic changes is crucial for understanding the potential energy surfaces upon which chemical and biological reactions take place. Here, we report on the determination of the electronic structure of matter using a single self-seeded femtosecond x-ray pulse from the Linac Coherent Light Source hard x-ray free electron laser. By measuring the high energy resolution off-resonant spectrum (HEROS), we were able to obtain information about the electronic density of states with a single femtosecond x-ray pulse. We show that the unoccupied electronic states of the scattering atom may be determined on a shot-to-shot basis and that the measured spectral shape is independent of the large intensity fluctuations of the incoming x-ray beam. Moreover, we demonstrate the chemical sensitivity and single-shot capability and limitations of HEROS, which enables the technique to track the electronic structural dynamics in matter on femtosecond time scales, making it an ideal probe technique for time-resolved X-ray experiments.

The grazing emission X-ray fluorescence (GEXRF) technique was applied to the analysis of different Al films, with nominal thicknesses in the range of 1 nm to 150 nm, on Si wafers. In GEXRF the sample volume from which the fluorescence intensity is detected is restricted to a near-surface region whose thickness can be tuned by varying the observation angle. This is possible because of the refraction of the fluorescence X-rays and the quite long emission paths within the probed sample. By recording the X-ray fluorescence signal for different shallow emission angles, defined relatively to the flat, smooth sample surface, the deposited Al surface layers of the different samples could be well characterized in terms of layer thickness, layer density, oxidation and surface roughness. The advantages offered by synchrotron radiation and the employed wavelength-dispersive detection setup were profited from. The GEXRF results retrieved were confirmed by complementary measurements. The experimental setup, the principles and advantages of GEXRF and the analysis of the recorded angular intensity profiles will be discussed in details.

The design and performance of a high-resolution transmission-type X-ray spectrometer for use in the 15–26 keV energy range at synchrotron light sources is reported. Monte Carlo X-ray-tracing simulations were performed to optimize the performance of the transmission-type spectrometer, based on the DuMond geometry, for use at the Super X-ray absorption beamline of the Swiss Light Source at the Paul Scherrer Institute. This spectrometer provides an instrumental energy resolution of 3.5 eV for X-ray emission lines around 16 keV and 12.5 eV for emission lines at 26 keV, which is comparable to the natural linewidths of the K and L X-ray transitions in the covered energy range. First experimental data are presented and compared with results of the Monte Carlo X-ray simulations.

We report on a laboratory-based facility for in-house x-ray absorption fine structure (XAFS) measurements. The device consists of a conventional x-ray source for the production of the incident polychromatic radiation and a von Hamos bent crystal spectrometer for the analysis of the incoming and transmitted radiation. The reliability of the laboratory-based setup was evaluated by comparing the Cu K-edge and Ta L3- edge XAFS spectra obtained in-house with the corresponding spectra measured at a synchrotron radiation facility. To check the accuracy of the device, the K- and L-edge energies and the attenuation coefficients below and above the edges of several 3d, 4d, and 5d elements were determined and compared with the existing experimental and theoretical data. The dependence of the XAFS spectrum shape on the oxidation state of the sample was also probed by measuring inhouse the absorption spectra of metallic Fe and two Fe oxides (Fe2O3 and Fe3O4).

We report on the radiative decay of double K-shell vacancy states produced in solid Ca, V, Fe, and Cu targets by impact with about 10 MeV/amu C and Ne ions. The resulting K hypersatellite x-ray emission spectra were measured by means of high- energy-resolution spectroscopy using a von Hamos bent crystal spectrometer. The experiment was carried out at the Philips variable energy cyclotron of the Paul Scherrer Institute. From the fits of the x-ray spectra the energies, line widths, and relative intensities of the hypersatellite x-ray lines could be determined. The fitted intensities were corrected to account for the energy-dependent solid angle of the spectrometer, effective source size, target self-absorption, crystal reflectivity, and detector efficiency. The single-to-double K-shell ionization cross-section ratios were deduced from the corrected relative intensities of the hypersatellites and compared to theoretical predictions from the semiclassical approximation model using hydrogenlike and Dirac-Hartree-Fock wave functions and from classical trajectory Monte Carlo calculations.

A critical factor for electronics based on inorganic layered crystals stems from the electrical contact mode between the semiconducting crystals and the metal counterparts in the electric circuit. Here, a materials tailoring strategy via nanocomposite decoration is carried out to reach metallic contact between MoS2 matrix and transition metal nanoparticles. Nickel nanoparticles (NiNPs) are successfully joined to the sides of a layered MoS2 crystal through gold nanobuffers, forming semiconducting and magnetic NiNPs@MoS2 complexes. The intrinsic semiconducting property of MoS2 remains unchanged, and it can be lowered to only few layers. Chemical bonding of the Ni to the MoS2 host is verified by synchrotron radiation based photoemission electron microscopy, and further proved by first- principles calculations. Following the system's band alignment, new electron migration channels between metal and the semiconducting side contribute to the metallic contact mechanism, while semiconductor–metal heterojunctions enhance the photocatalytic ability.

X-ray techniques have evolved over decades to become highly refined tools for a broad range of investigations. Importantly, these approaches rely on X-ray measurements that depend linearly on the number of incident X-ray photons. The advent of X-ray free electron lasers (XFELs) is opening the ability to reach extremely high photon numbers within ultrashort X-ray pulse durations and is leading to a paradigm shift in our ability to explore nonlinear X-ray signals. However, the enormous increase in X-ray peak power is a double-edged sword with new and exciting methods being developed but at the same time well-established techniques proving unreliable. Consequently, accurate knowledge about the threshold for nonlinear X-ray signals is essential. Herein we report an X-ray spectroscopic study that reveals important details on the thresholds for nonlinear X-ray interactions. By varying both the incident X-ray intensity and photon energy, we establish the regimes at which the simplest nonlinear process, two-photon X-ray absorption (TPA), can be observed. From these measurements we can extract the probability of this process as a function of photon energy and confirm both the nature and sub-femtosecond lifetime of the virtual intermediate electronic state.

Chemical reactions are always associated with electronic structure changes of the involved chemical species. Determining the electronic configuration of an atom allows probing its chemical state and gives understanding of the reaction pathways. However, often the reactions are too complex and too fast to be measured at in situ conditions due to slow and/or insensitive experimental techniques. A short-lived Au₂O compound has been detected for the first time under in situ conditions during the temperature-programmed reduction of Au₂O₃. A time-resolved resonant inelastic X-ray scattering experiment (RIXS) allowed the determination of changes in the Au electronic structure, enabling a better understanding of the reaction mechanism of Au(III) reduction. On the basis of time-resolved RIXS data analysis combined with genetic algorithm methodology, we determined the electronic structure of the metastable Au₂O intermediate species. The data analysis showed a notably larger value for the lattice constant of the intermediate Au as compared to the theoretical predictions. With support of DFT calculations, we found that such a structure may indeed be formed and that the expanded lattice constant is due to the termination of Au₂O on the Au₂O₃ structure.during Au₂O₃ Reduction

The high-resolution von Hamos bent crystal spectrometer of the University of Fribourg was upgraded with a focused X-ray beam source with the aim of performing micro-sized X-ray fluorescence (XRF) measurements in the laboratory. The focused X-ray beam source integrates a collimating optics mounted on a low-power micro-spot X-ray tube and a focusing polycapillary half-lens placed in front of the sample. The performances of the setup were probed in terms of spatial and energy resolution. In particular, the fluorescence intensity and energy resolution of the von Hamos spectrometer equipped with the novel micro-focused X-ray source and a standard high-power water-cooled X-ray tube were compared. The XRF analysis capability of the new setup was assessed by measuring the dopant distribution within the core of Er-doped SiO2 optical fibers.

We report on the design and performance of a wavelength-dispersive type spectrometer based on the von Hamos geometry. The spectrometer is equipped with a segmented-type crystal for x-ray diffraction and provides an energy resolution in the order of 0.25 eV and 1 eV over an energy range of 8000 eV–9600 eV. The use of a segmented crystal results in a simple and straightforward crystal preparation that allows to preserve the spectrometer resolution and spectrometer efficiency. Application of the spectrometer for time-resolved resonant inelastic x-ray scattering and single-shot x-ray emission spectroscopy is demonstrated.

We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.

xperimental evidence for the correlated two-electron one-photon transitions (1s⁻²→2s⁻¹2p⁻¹) following single-photon K-shell double ionization is reported. The double K-shell vacancy states in solid Mg, Al, and Si were produced by means of monochromatized synchrotron radiation, and the two-electron one-photon radiative transitions were observed by using a wavelength dispersive spectrometer. The two-electron one-photon transition energies and the branching ratios of the radiative one-electron to two-electron transitions were determined and compared to available perturbation theory predictions and configuration interaction calculations.

We present measurements of the resonant inelastic x-ray scattering (RIXS) spectra of the CH3I molecule in the hard-x-ray region near the iodine L2 and L3 absorption edges. We show that dispersive RIXS spectral features that were recognized as a fingerprint of dissociative molecular states can be interpreted in terms of ultrashort natural lifetime of ∼200 attoseconds in the case of the iodine L-shell core-hole. Our results demonstrate the capacity of the RIXS technique to reveal subtle dynamical effects in molecules with sensitivity to nuclear rearrangement on a subfemtosecond time scale.

An observation of the internal structure of the L-shell hypersatellite x rays resulting from the one-photon decay of L⁻² double-vacancy states in palladium multiply ionized by oxygen ions is reported. The Pd L₃→M4,5 x-ray spectrum was measured with a von Hamos high-resolution crystal spectrometer. The complex shape of the observed spectrum could be interpreted in detail using relativistic multiconfiguration Dirac-Fock calculations. The relative intensities of the measured x rays were found to be in good agreement with semiclassical approximation calculations using relativistic Dirac-Hartree-Fock wave functions.

The development of a wavelength-dispersive spectrometer for microfluorescence analysis at the X-ray Microscopy ID21 beamline of the European Synchrotron Radiation Facility (ESRF) is reported. The spectrometer is based on a polycapillary optic for X-ray fluorescence collection and is operated in a flat-crystal geometry. The design considerations as well as operation characteristics of the spectrometer are presented. The achieved performances, in particular the energy resolution, are compared with the results of Monte Carlo simulations. Further improvement in the energy resolution, down to ~eV range, by employing a double-crystal geometry is examined. Finally, examples of applications requiring both spatial and spectral resolutions are presented.

The photon energy dependence of the double K-shell ionization of light atoms is reported. Experimental double-to-single photoionization cross section ratios for Mg, Al, Si and Ca were obtained from measurements of high-resolution x-ray emission spectra. The double photoionization (DPI) cross-sections for K-shell hollow atom production are compared to convergent close-coupling calculations (CCC) for neutral atoms and He-like ions. The relative importance of the initial-state and final-state electron-electron interactions to the K-shell DPI in many-electron atoms and two-electron ions is addressed. Physical mechanisms and scaling laws of the K-shell double photoionization are examined. A semiempirical universal scaling of the DPI cross sections with the effective nuclear charge for neutral atoms 2≤Z≤47 is established.

High-resolution measurements of the photoinduced X-ray emission of liquid mercury were performed, using a transmission DuMond-type crystal spectrometer for transitions above 11 keV and a reflection von Hamos-type crystal spectrometer for transitions below 11 keV. The target X-ray fluorescence was produced by irradiating the sample with the Bremsstrahlung from X-ray tubes. The energies and natural linewidths of 6 K-shell, 26 L-shell and 2 M-shell X-ray transitions were determined. Using a least-squares-fit method to solve the two sets of equations derived from the observed transition energies and transition widths the binding energies of the subshells K to M₅ and O₁ and the level widths of the subshells K to N₅ and O₁ could also be determined.

We report on the photon energy dependence of the K-shell double photoionization (DPI) of Mg, Al, and Si. The DPI cross sections were derived from high-resolution measurements of x-ray spectra following the radiative decay of the K-shell double vacancy states. Our data evince the relative importance of the final-state electron- electron interaction to the DPI. By comparing the double-to-single K-shell photoionization cross-section ratios for neutral atoms with convergent close-coupling calculations for He-like ions, the effect of outer shell electrons on the K-shell DPI process is assessed. Universal scaling of the DPI cross sections with the effective nuclear charge for neutral atoms is revealed.

We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹² atoms/cm². The latter can be presumably further improved down to 10⁷ atoms/cm² by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.

We perform convergent close-coupling calculations of double photoionization (DPI) of the K-shell of alkaline-earth metal atoms (Be, Mg, and Ca) from the threshold to the nonrelativistic limit of infinite photon energy. Theoretical double-to-single photoionization cross-section ratios for Mg and Ca are compared with experimental values derived from high-resolution x-ray spectra following the radiative decay of the K-shell double vacancy. We investigate the role of many-electron correlations in the ground and doubly-ionized final states played in the DPI process. Universal scaling of DPI cross section with an effective nuclear charge is examined in neutral atoms in comparison with corresponding heliumlike ions.

X-ray resonant Raman scattering (RRS) spectra of Al, Al₂O₃, Si, and SiO₂ were measured at the European Synchrotron Radiation Facility, using a high-resolution Bragg-type curved crystal spectrometer. The x-ray RRS spectra were collected at several beam energies tuned below the 1s absorption thresholds of Al and Si. Differences in the spectral features between the elemental samples and the oxide ones were clearly observed. The data were interpreted using the second-order perturbation theory within the Kramers-Heisenberg (KH) approach. It is shown that, using the KH formalism, oscillator strengths that are similar to the ones deduced from x-ray absorption measurements can be extracted from emission x-ray RRS spectra. The total cross sections for the x-ray RRS process were derived for the different photon beam energies and compared with theoretical predictions. For elemental silicon, the weak 1s-3p excitation was observed and found to be consistent with results of density of states calculations.

We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the 1s-3p excitation were derived. The Kramers-Heisenberg formalism was found to reproduce quite well the x-ray RRS spectra, which is of prime importance for applications of the total-reflection x-ray fluorescence technique.

High-resolution measurements of the resonant X-ray Raman scattering (RRS) of Al and Si and their oxides were performed at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France, using a von Hamos Bragg-type curved crystal spectrometer. To probe the influence of chemical effects on the RRS X-ray spectra, Al₂O₃ and SiO₂ samples were also investigated. The X-ray RRS spectra were measured at different photon beam energies tuned below the K-absorption edge. The measured spectra are compared to results of RRS calculations based on the second- order perturbation theory within the Kramers–Heisenberg approach.

The high-resolution von Hamos Bragg crystal spectrometer was constructed for the study of K X-ray emission from low-Z elements and L and M X-ray spectra of medium to high Z elements. Recently, this instrument was applied to high-resolution XES and RIXS studies using X-ray synchrotron radiation at the ID21 and BM5 beamlines at the ESRF. An outline of the spectrometer design and performance characteristics will be given. The studies deal with the energy dependent KL double photoexcitation of argon, the L3 and M1 atomic-level widths of elements 54≤Z≤77, and the evolution of the K-edge RIXS spectra of manganese oxides.

We review the high energy resolution off-resonant spectroscopy (HEROS) technique. HEROS probes the unoccupied electronic states of matter in a single-shot manner thanks to the combination of off-resonant excitation around atomic core states using wavelength dispersive X-ray detection setups. In this review we provide a general introduction to the field of X-ray spectroscopy together with the specification of the available X-ray techniques and X-ray methodologies. Next, the theoretical description of the HEROS approach is introduced with a special focus on the derivation of the X- ray emission and X-ray absorption correspondence relation at off-resonant excitation conditions. Finally, a number of experimental HEROS reports are reviewed in the field of chemistry and material science. We emphasize the applicability of HEROS to pulsed X-ray sources, like X-ray free electron lasers, and support the review with experimental examples. The review is complemented with perspectives on and possible further applications of the HEROS technique to the field of X-ray science.

X-ray atomic properties of Nickel were investigated in a singular approach that combines different experimental techniques to obtain new and useful reliable values of atomic fundamental parameters for X-ray spectrometric purposes and for comparison to theoretical predictions. We determined the mass attenuation coefficients in an energy range covering the L- and K- absorption edges, the K-shell fluorescence yield and the Kb/Ka and Kb1,3/Ka1,2 transition probability ratios. The obtained line profiles and linewidths of the Ka and Kb transitions in Ni can be considered as the contribution of the satellite lines arising from the [KM] shake processes suggested by Deutsch et al. [1] and Ito et al. [2]. Comparison of the new data with several databases showed a good agreement but also discrepancies were found with existing tabulated values.

We report on vacuum ultraviolet (VUV) excited photoluminescence (PL) spectra emitted from a chemical vapor deposited MoS₂ few-layered film. The excitation spectrum was recorded by monitoring intensities of PL spectra at ~1.9 eV. A strong wide excitation band peaking at 7 eV was found in the excitation. The PL excitation band is most intensive at liquid helium temperature and completely quenched at 100 K. Through first-principles calculations of photoabsorption in MoS₂, the excitation was explicated and attributed to transitions of electrons from p- and d- type states in the valence band to the d- and p-type states in the conduction band. The obtained photon-in/photon-out results clarify the excitation and emission behavior of the low dimensional MoS₂ when interacting with the VUV light sources.

We report on nonlinear interaction of solid Fe with intense femtosecond hard x-ray free-electron laser (XFEL) pulses. The experiment was performed at the CXI end- station of the Linac Coherent Light Source (LCLS) by means of high- resolution x-ray emission spectroscopy. The focused x-ray beam provided extreme fluence of ~10⁵ photons/Ų. Two-photon absorption leading to K-shell hollow atom formation and to single K-shell ionization of solid Fe was investigated.

We report on the reactivity of grafted tantalum organometallic catalysts with molecular oxygen. The changes in the local Ta electronic structure were followed by in situ high-energy resolution off-resonant spectroscopy (HEROS). The results revealed agglomeration and formation of Ta dimers, which cannot be reversed. The process occurs independently of starting grafted complex.

Depth-profiling measurements by means of synchrotron radiation based grazing XRF techniques, i.e., grazing emission X-ray fluorescence (GEXRF) and grazing incidence X-ray fluorescence (GIXRF), present a promising approach for the non-destructive, sub-nanometer scale precision characterization of ultra shallow ion-implantations. The nanometer resolution is of importance with respect to actual semiconductor applications where the down-scaling of the device dimensions requires the doping of shallower depth ranges. The depth distributions of implanted ions can be deduced from the intensity dependence of the detected X-ray fluorescence (XRF) signal from the dopant atoms on either the grazing emission angle of the emitted X-rays (GEXRF), or the grazing incidence angle of the incident X-rays (GIXRF). The investigated sample depth depends on the grazing angle and can be varied from a few to several hundred nanometers. The GEXRF setup was equipped with a focusing polycapillary half-lens to allow for laterally resolved studies. The dopant depth distribution of the investigated low-energy (energy range from 1 keV up to 8 keV) P, In and Sb ion-implantations in Si or Ge wafers were reconstructed from the GEXRF data by using two different approaches, one with and one without a priori knowledge about the bell-shaped dopant depth distribution function. The results were compared to simulations and the trends predicted by theory were found to be well reproduced. The experimental GEXRF findings were moreover verified for selected samples by GIXRF.

X-ray emission spectra recorded in the off-resonant regime carry information on the density of unoccupied states. It is known that by employing the Kramers-Heisenberg formalism, the high energy resolution off-resonant spectroscopy (HEROS) is equivalent to the x-ray absorption spectroscopy (XAS) technique and provides the same electronic state information. Moreover, in the present Letter we demonstrate that the shape of HEROS spectra is not modified by self-absorption effects. Therefore, in contrast to the fluorescence-based XAS techniques, the recorded shape of the spectra is independent of the sample concentration or thickness. The HEROS may thus be used as an experimental technique when precise information about specific absorption features and their strengths is crucial for chemical speciation or theoretical evaluation.