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5,051 results on '"Han KI"'

111. Contributions of interfacial spin–orbit coupling to magnetic and spintronic properties in AuPt/ferromagnet bilayers.

Author

Yun, Deok Hyun, Han, Ki-Hyuk, Nah, Young-Jun, Kim, YongJin, Jang, Seung-Hun, Kang, Min-Gu, Shin, Sang-Ho, Min, Byoung-Chul, Koo, Hyun Cheol, Ju, Byeong-Kwon, and Lee, OukJae

Subjects
*INFORMATION storage & retrieval systems, *MAGNETOELASTIC effects, *BILAYERS (Solid state physics), *MAGNETIC properties, *FERROMAGNETIC materials
Abstract

We investigate the relationships between various magnetic and spintronic properties within AuPt/ferromagnet (FM) bilayers (FM = CoFe, CoFeB, Py, and Co). A linear correlation between the volume and surface magnetic anisotropies is identified, potentially influenced by the magnetoelastic effect. The FM thickness dependence of the magnetic damping indicates that spin-memory loss due to the interfacial spin–orbit coupling (ISOC) and spin pumping to the heavy-metal layer contribute little to the damping. Instead, a notable contribution from two magnon scattering to the damping is recognized in AuPt/(Co, CoFe, CoFeB) bilayers, possibly originating from a magnetic inhomogeneity due to the ISOC. In addition, in contrast to the magnetic damping, spin–orbit-torque efficiencies are unlikely related to the ISOC in AuPt/FM systems. This work offers valuable insights into the correlations among magnetic and spintronic parameters arising from the interfaces, ultimately aiding in the advancement of magnetic memory and information processing systems. [ABSTRACT FROM AUTHOR]

Published
2024
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113. Safety and Efficacy of Pitavastatin in Patients With Impaired Fasting Glucose and Hyperlipidemia: A Randomized, Open-labeled, Multicentered, Phase IV Study

Author

Lee, Hae-Young, Han, Ki-Hoon, Chung, Woo-Baek, Her, Sung-Ho, Park, Tae-Ho, Rha, Seung-Woon, Choi, So-Yeon, Jung, Kyung-Tae, Park, Jong-Seon, Kim, Pum-Joon, Lee, Jong-Min, Jeong, Myung-Ho, Shin, Eun-Seok, Gwon, Hyeon-Cheol, Han, Kyoo-Rok, Chae, Jei-Keon, Kim, Woo-Shik, Choi, Dong-Ju, Hong, Bum-Kee, Choi, Si-Wan, and Chung, Namsik

Published
2020
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129. Three‐dimensional body composition parameters using automatic volumetric segmentation allow accurate prediction of colorectal cancer outcomes

Author

Bimurzayeva, Aiya, primary, Kim, Min Jung, additional, Ahn, Jong‐Sung, additional, Ku, Ga Yoon, additional, Moon, Dokyoon, additional, Choi, Jinsun, additional, Kim, Hyo Jun, additional, Lim, Han‐Ki, additional, Shin, Rumi, additional, Park, Ji Won, additional, Ryoo, Seung‐Bum, additional, Park, Kyu Joo, additional, Chung, Han‐Jae, additional, Kim, Jong‐Min, additional, Park, Sang Joon, additional, and Jeong, Seung‐Yong, additional

Published
2023
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143. The Possibilities and Limitations of Gifted Education in Korea: A Look at the ISEP Science-Gifted Education Center

Author

Han, Ki-Soon

Abstract

Education for gifted children is currently one of the hottest educational issues in Korea. Much money and effort are being invested in this area of education. Recent announcements by the Korean Ministry of Education state that all children should be educated to the level of which they are capable, and the current program for gifted students should be and will be extended. However, there is little attention paid to the actual substance of gifted education in Korea. What is happening in the name of gifted education? What is the meaning of giftedness and gifted education? How and in what respects can the gifted program be differentiated from general programs? What are the problems and concerns in serving gifted students? What are the effects of gifted programs? These are the main questions of the present qualitative study. For the purposes of this ethnographic study, the ISEP science gifted education center in Korea was observed for a six-month period, and 10 professors and 50 students at the ISEP were interviewed in depth. The results of the study are as follows. First of all, the ISEP science gifted education center provides differentiated learning environments and teaching methods. Second, through these differentiated learning experiences, students improve their thinking skills and creative problem solving abilities, as well as developing positive self-esteem. In addition, the formation of human net works, the special meaning of the "gifted" label, and the acquisition of personal knowledge were seen to be some of the major educative possibilities on offer at the ISEP gifted education center. However, some professors' low levels of motivation, the absence of individualized educational plans, bureaucratic management, weak student commitment to set tasks, and a lack of opportunity for students' social activities were clearly limitations of the ISEP gifted education center. The results of this study will contribute to, specifically, the search for new ideas to improve the operation of gifted education as well as helping to surmount the hidden problems lurking beneath the surface of the current gifted education practices in Korea, and, more generally, to enhance our understanding of the diverse gifted educational practices in operation worldwide.

Published
2007

150. Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs

Author

Dixit, Hemant, Lichtenwalner, Daniel J., Scholze, Andreas, Kim, Jeff, Han, Ki Jeong, and Ryu, Sei Hyung

Abstract

We present a revised channel mobility model for 4H-SiC MOSFETs. Mobility measurements are performed on 4H-SiC lateral MOSFET test structures in the temperature range of 25-175 °C. We observe that the temperature and P-well concentration dependence of channel mobility cannot be predicted by popular mobility models available within commercial TCAD tools. A careful investigation revels that channel mobility components need to be revised and replaced using a comprehensive model that accurately describes the predominant scattering mechanisms. We present a well calibrated channel mobility model for 4H-SiC using a revised treatment of bulk, surface roughness and surface phonon components. An excellent agreement with measured data is obtained using this model, making it more suitable for predictive device simulation using TCAD tools.

Published
2024
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