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A chromatic-dispersion-free transmission using a time-reversal optical parametric amplifier (OPA) for 10 Gbit/s data over 25 km of standard single-mode fibre is demonstrated. The time-reversal was achieved using optical phase conjugation in the OPA. A pilot signal was first sent to estimate the optical channel, which would be reshaped by the OPA and then retransmitted with data through the same fibre. The dispersion is compensated automatically through the transmission. Experimental results showed that around 1 dB improvement can be obtained at a bit error rate of

We propose a novel scheme to expand the inherent limit in the product of the optical delay and the transmission bandwidth in resonator-based delay lines, with the optical orthogonal frequency division multiplexing (OOFDM) technique. The optical group delay properties of a single ring resonator were theoretically studied, and double-carrier OOFDM signals were transmitted through such a device in the experiment, where the subcarrier-frequencies matched those of the resonant modes in the device. The results show that, although the delay-bandwidth product (DBP) is limited in the order of 50 ps×10 Gb/s for signals on each of the sub-carriers, the total DBP of the system is doubled to 2×50 ps×10 Gb/s due to the double-carrier transmission.

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.

Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.

We propose and demonstrate combining differential phase-shift keying (DPSK) and duobinary transmission for the downstream in 40-Gb/s long-reach wavelength division multiplexed-passive optical networks (WDM-PONs) in order to provide robust transmission performance in the backhaul section and simple detection at the ONUs. DPSK is deployed in the trunk span as it provides stronger robustness to fiber nonlinearity. Duobinary is used in the access span where its higher chromatic dispersion tolerance relieves the need for dispersion compensation. All-optical multichannel modulation format conversion from DPSK to duobinary is realized in the local exchange in a single delay interferometer to reduce system cost. Single and multi-channel 80-km long-reach DPSK transmission and up to 5-km duobinary access transmission are experimentally demonstrated at 40 Gb/s. The proposed approach shows great potential for future high data rate optical access networks.

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

Surface nanocones on 6H-SiC have been developed and demonstrated as an effective method of enhancing the light extraction efficiency from fluorescent SiC layers. The surface reflectance, measured from the opposite direction of light emission, over a broad bandwidth range is significantly suppressed from 20.5% to 1.0 % after introducing the sub-wavelength structures. An omnidirectional light harvesting enhancement (>91%), is also achieved which promotes fluorescent SiC as a good candidate of wavelength converter for white light-emitting diodes.

Surface plasmon coupling with light-emitters and surface nano-patterning have widely been used separately to improve low efficiency InGaN light-emitting diodes. We demonstrate a method where dielectric nano-patterning and Ag nanoparticles (NPs) are combined to provide both light extraction and internal quantum efficiency enhancement for InGaN/GaN quantum-well light-emitters. By fabricating dielectric nano-rod pattern on the GaN surface, an optical coating that improves the light extraction is obtained, and furthermore has a low refractive index which blue-shifts the plasmonic resonance of Ag NPs towards the emission wavelength. We investigate emission components from both the GaN and sapphire surface of the semiconductor crystal and show that Ag NPs on dielectric nano-pattern compared to a planar surface, result in a stronger enhancement.

An approach for fabricating sub-wavelength antireflective structures on SiC material is demonstrated. A time-efficient scalable nanopatterning method by rapid thermal annealing of thin metal film is applied followed by a dry etching process. Size-dependent optical properties of the antireflective SiC structures have been investigated. It is found that the surface reflection of SiC in the visible spectral range is significantly suppressed by applying the antireflective structures. Meanwhile, optical transmission and absorption could be tuned by modifying the feature size of the structure. It is believed that this effective fabrication method of antireflective structures could also be realized on other semiconductor materials or devices.

International audience; Wavelength conversion based on degenerate four-wave mixing (FWM) was demonstrated and compared between silicon nanowire and microring resonator (MRR). 15 dB enhancement of conversion efficiency (CE) with relatively low input pump power (5 mW) was achieved experimentally in an MRR. The impacts of bus waveguide length and propagation loss were theoretically analyzed under the effect of nonlinear loss.

International audience; Silicon micro-ring resonators (MRRs) are compact and versatile devices whose periodic frequency response can be exploited for a wide range of applications. In this paper, we review our recent work on linear all-optical signal processing applications using silicon MRRs as passive filters. We focus on applications such as modulation format conversion, differential phase-shift keying (DPSK) demodulation, modulation speed enhancement of directly modulated lasers (DMLs), and monocycle pulse generation. The possibility to implement polarization diversity circuits, which reduce the polarization dependence of standard silicon MRRs, is illustrated on the particular example of DPSK demodulation.

International audience; Space division multiplexing (SDM) is currently widely investigated in order to provide enhanced capacity thanks to the utilization of space as a new degree of multiplexing freedom in both optical fiber communication and on-chip interconnects. Basic components allowing the processing of spatial modes are critical for SDM applications. Here we present such building blocks implemented on the silicon-on-insulator (SOI) platform. These include fabrication tolerant wideband (de)multiplexers, ultra-compact mode converters and (de)multiplexers designed by topology optimization, and mode filters using one-dimensional (1D) photonic crystal silicon waveguides. We furthermore use the fabricated devices to demonstrate on-chip point-to-point mode division multiplexing transmission, and all-optical signal processing by mode-selective wavelength conversion. Finally, we report an efficient silicon photonic integrated circuit mode (de)multiplexer for few-mode fibers (FMFs).

Nanopillars were applied on the p-GaN layer of the InGaN-based near ultraviolet epiwafer to improve the light extraction efficiency. A photoluminescence enhancement of 74% is reported with a nanopillar height of around 105 nm.

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al 2 O 3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.

Enhanced edge extraction with high resolution is demonstrated in optical scanning holography (OSH) system by manipulating the radius of the spiral phase plate (SPP) to dampen down the sidelobes of the point spread function.

The modulation bandwidth of surface plasmon coupled GaN-based LEDs is increased by ∼1.2 times to 434.5 MHz compared with normal LED by applying Ag nanoparticles. These findings will help for the industrialization of VLC system.

Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

A simple all-optical coherence-free microwave notch filter is proposed and experimentally demonstrated. The filter with switchable passbands is based on a single-wavelength optical source and phase-intensity hybrid modulation scheme. The DC bias voltage applied to the Mach-Zehnder intensity modulator can be adjusted to switch signs of the tap coefficients, which affect the baseband response. Both lowpass and bandpass filtering responses are observed in the experiment and agree well with the simulated results.

An ultra-low-loss coupler for interfacing a silicon-on-insulator ridge waveguide and a single-mode fiber in both polarizations is presented. The inverted taper coupler, embedded in a polymer waveguide, is optimized for both the transverse-magnetic and transverse-electric modes through tapering the width of the silicon-on-insulator waveguide from 450 nm down to less than 15 nm applying a thermal oxidation process. Two inverted taper couplers are integrated with a 3-mm long silicon-on-insulator ridge waveguide in the fabricated sample. The measured coupling losses of the inverted taper coupler for transverse-magnetic and transverse-electric modes are ∼ 0.36 dB and ∼ 0.66 dB per connection, respectively.

A millimeter-wave (mm-wave) harmonic signal generation method is proposed and verified experimentally. The mm-wave harmonic signals of high order are generated through the intrinsic nonlinear transfer characteristics of the Mach-Zehnder amplitude modulator. A tunable single-resonance microwave photonic filter is used to select the specific order of harmonic signal. Signals up to the fourth harmonic at 20 GHz can be generated by low-frequency driving signal at 5 GHz.

We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

In this paper, a tunable single-passband microwave photonic filter with positive and negative taps based on phase modulation and a fiber Mach–Zehnder interferometer (FMZI)) is presented, theoretically analyzed and experimentally demonstrated. The FMZI as the slicing filter results in a single-bandpass characteristic for the presented filter, and by using phase modulation, a number of negative taps are generated, thus making the baseband resonance suppressed, which is desirable for microwave photonic filter's application. The wavelength spacing of the FMZI can be tuned by employing an optical variable delay line, making the present filter continuously tunable. A tunable single-passband microwave photonic filter without baseband resonance is achieved in the experiment. The present filter shows an extinction ratio of up to ∼20 dB and good tuning linearity.

We propose a silicon waveguide structure employing silica-filled vertical-dual slots for broadband wavelength conversion, which can be fabricated using simple silicon-on-insulator technology. We demonstrate group-velocity dispersion tailoring by varying the width of the core, the slots and the side strips, and put forward a method to achieve spectrally-flattened near-zero anomalous group-velocity dispersion at telecom wavelengths. A proposed structure provides a group-velocity dispersion parameter β2 of −60 ps2/km with an e ective mode area Aeff of 0.075 µm2 at 1550 nm. This structure is predicted to significantly broaden the bandwidth of wavelength conversion via four-wave mixing, which is validated with experimentally measured 3 dB bandwidth of 76 nm.

A frequency up/down-converter is proposed based on fiber four-wave-mixing (FWM) between the output of a dual-wavelength fiber laser and the modulated optical carrier for bidirection radio-over-fiber (RoF) systems. Frequency up-conversion from 1.50 to 11.08 GHz and down-conversion from 10.60 to 1.02 GHz are successfully demonstrated and a small efficiency difference between up- and down-conversions has been achieved. A proposal of setting up a bidirectional RoF system based on fiber FWM frequency converter is presented. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1542–1545, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24370

A tunable all-optical microwave notch filter with a negative tap based on a semiconductor optical amplifier and a dispersive medium is demonstrated. A negative tap is realized through the cross gain modulation in the semiconductor optical amplifier. The free spectrum range of the notch filter can be tuned by tuning the wavelength of one of the two laser sources. The influence of the amplitude mismatch of the two lasers on the performance of the filter is analyzed. The present notch filter is easy to implement and cost-effective.

Germanium (Ge) nanocrystals embedded in silica matrix is an interesting material for new optoelectronic devices. In this paper, standard silica-on-silicon waveguides with a core doped by Ge nanocrystals were fabricated using plasma enhanced chemical vapour deposition and reactive ion etching. The cross-sectional waveguide structures were investigated by scanning electron microscopy. Transmission of the waveguide was measured using a broadband light source covering the wavelength range from 500 nm to 1700 nm, and the results were compared against transmission through a standard waveguide. Strong absorption peaks at 1056.8 nm, 1263.2 nm and 1406 nm were observed. These are assigned to the quantum confinement effect in Ge nanocrystals in the core. Putting Ge nanocrystals in a waveguide enables easy material characterisation and potential application in an integrated lightwave circuit device.

A novel tunable and reconfigurable microwave photonic filter based on two cascaded modulators and a dispersive medium is proposed, theoretically discussed and experimentally demonstrated. A single-wavelength LD and a modulator (either a Mach–Zehnder modulator or a phase modulator which can avoid the dc bias drift problem) are used to obtain a multi-wavelength optical source. By adjusting the modulation frequency and the bias voltage on the modulators, the wavelength spacing and the relative amplitude of the optical tones change, thus making the filter tunable and reconfigurable. The experimental results show that the proposed filters have good tunability and reconfigurability and the mainlobe-to-sidelobe ratio of around 25 dB is achieved.

A Mach-Zehnder interferometer (MZI) which is used as a wavelength-spacing tunable comb filter in a fiber ring laser is built by employing an optical variable delay line (OVDL). Stable multi-wavelength semiconductor optical amplifier (SOA)-fiber ring laser based on an SOA and the MZI comb filter is achieved. Wavelength spacing can be continuously tuned by adjusting the OVDL and, as an example, multi-wavelength lasing with the wavelength spacing of 0.4, 0.8, or 1.6 nm is demonstrated. The output of the proposed multi-wavelength SOA-fiber ring laser is quite stable at room temperature and the output spectrum can be adjusted by controlling the bias current of the SOA.

This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N2 atmosphere. We studied the annealed samples by transmission electron microscopy (TEM) and Raman spectroscopy. As-deposited and annealed samples were analyzed by secondary ion mass spectroscopy (SIMS). TEM investigation shows that Ge nanoclusters were formed in the as-deposited SiGe layer and the SiGe layer was transformed into a silicon dioxide layer embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth indicates that the distribution of the stress applied to the Ge clusters varies with depth. SIMS measurements show clearly the dramatic O increase in the as-deposited SiGe layer after annealing. The creation of Ge nanoclusters by the combination of PECVD and annealing makes possible the application in complicated waveguide components.

The thermal conductivities of vinyl endblocked polymethylsiloxane reinforced with silicone nitride (Si3N4) particles alone or in combination with silicone carbide whisker (SiCw) were investigated in this article. The results indicate that the silicone rubber incorporating of 50 vol% hybrid Si3N4 particles of different sizes at an optimal weight ratio exhibited the highest thermal conductivity of 1.48 W/m K compared to each single particle size filler used only; moreover, the combined use of hybrid Si3N4 and SiCw with the weight ratio of 9:1 provided the composites with higher thermal conductivity due to the structuring filler in hybrid fillers, improved thermal stability and reduced coefficient of thermal expansion (CTE) for comparison with the hybrid Si3N4 particles used alone. In addition, the surface treatment of the hybrid fillers with 3-methacryloyloxy-propyltrimethoxysilane enhanced the thermal conductivity and reduced CTE of the composites.

The tunable microwave photonic filter based on a fiber ring and erbium-doped fiber amplifier (EDFA) was proposed. By introducing a section of erbium-doped fiber (EDF) into the fiber ring, the loss of the signal can be compensated by the EDFA gain through adjusting the pump power. This can largely increase the number of the effective sampling taps, and then improve the performance of the microwave photonic filter notably. When the pump power was set to be 42.7 mW, a microwave bandpass filter with the 3-dB bandwidth of 0.15 MHz, the Q factor up to 100 and extinction ratio up to 20 dB was achieved. By employing a tunable optical delay line in the above fiber ring, a tunable microwave photonic filter has been realized through tuning the length of the optical delay line. The proposed tunable microwave photonic filter can find great applications in microwave signal processing and ROF system.

A tunable and reconfigurable microwave photonic filter is demonstrated by employing a tunable Mach–Zehnder interferometer (MZI) and a wavelength-controllable Raman fiber laser. The free-spectral-range and spectral response of the microwave photonic filter are tuned and reconfigured by controlling the optical variable delay line in one arm of the MZI and the powers of the pump LDs. Experimental results are given to show the enhanced flexibility of the present microwave photonic filter.

Continuously tunable incoherent microwave photonic filter using a tunable Mach-Zehnder interferometer as the slicing filter

This paper reports the formation of Ge nanoclusters in silica glass thin films deposited by plasma-enhanced chemical vapor deposition (PECVD). We studied the samples by transmission electron microscopy (TEM) and Raman spectroscopy after annealing. TEM investigation shows that the Ge nanoclusters at two areas were formed by different mechanisms. The Ge nanoclusters formed in a single row along the interface of a silicon substrate and the silica glass film by annealing during high-temperature heat treatment. Ge nanoclusters did not initially form in the bulk of the film but could be subsequently formed by the electron-beam irradiation. The interface between the silicon substrate and the silica glass film was investigated by Raman spectroscopy. The shift of the Raman peaks around 286.8 cm-1 and 495 cm-1 suggests that the interface is a Si1-xGex alloy film and that the composition x varies along the film growth direction.

International audience; Our recent results on the demonstration of on-chip mode-division multiplexing functionalities are reviewed, with a special emphasis on the feasibility of nonlinear all-optical signal processing on the silicon-on-insulator (SOI) platform. Mode-selective parametric processes are demonstrated in a 4-mm long SOI waveguide.

We report the design and fabrication of a compact multi-core fiber fan-in/fan-out using a grating coupler array on the SOI platform. The grating couplers are fully-etched, enabling the whole circuit to be fabricated in a single lithography and etching step. Thanks to the apodized design for the grating couplers and the introduction of an aluminum reflective mirror, a highest coupling efficiency of -3.8 dB with 3 dB coupling bandwidth of 48 nm and 1.5 dB bandwidth covering the whole C band, together with crosstalk lower than -32 dB are demonstrated. (C)2015 Optical Society of America

640 Gbit/s N-OTDM DPSK wavelength conversion is demonstrated in a Si-nanowire. All 64 tributaries are converted within an average power penalty of 1 dB at the FEC BER-limit 3E-3. Only 22-fJ/bit switching energy is required.

We present an edge extraction method based on aperture synthesis with different pupils in optical scanning holography. By utilizing two sub-holograms covering different spatial frequency ranges of the object, sharp edges can be extracted successfully.

We demonstrate effective carrier depletion by metal-semiconductor-metal junctions for a silicon waveguide. Photo-generated carriers are efficiently swept out by applying bias voltages, and a shortest carrier lifetime of only 55 ps is demonstrated.

Enhanced transmittance of 6H-SiC with nanocone structures were achieved by using self-assembled Au nanoparticles as etching mask. HF passivation process of nanocone structures was investigated to further improve the transmittance. The max transmittance of structured SiC is significantly improved by 10%.

A method for fabricating scalable antireflective nanostructures on polymer surfaces (polycarbonate) is demonstrated. The transition from small scale fabrication of nanostructures to a scalable replication technique can be quite challenging. In this work, an area per print corresponding to a 2-inch-wafer, is presented. The initial nanopatterning is performed on SiC in a 2-step process. Depending on the nanostructures the transmission of the SiC surface can be increased or suppressed (average height of nanostructures ~300nm and ~600nm, respectively) while the reflectance is decreased, when compared to a bare surface. The reflectance of SiC can be reduced down to 0.5% when the ~600nm nanostructures are applied on the surface (bare surface reflectance 25%). The texture of the green SiC color is changed when the different nanostructures are apparent. The ~600nm SiC nanostructures are replicated on polymer through a process flow that involved hot embossing and galvanization. The resulted polymer structures have similar average height and exhibit more rounded edges than the initial SiC nanostructures. The polymer surface becomes antireflective and hydrophobic after nanostructuring. The contact angle changes from 68 (bare) to 123 (nanostructured) degrees. The optical effect on the polymer surface can be maximized by applying a thin aluminum (Al) layer coating on the nanostructures (bare polymer reflectance 11%, nanostructured polymer reflectance 5%, Al coated nanostructured polymer reflectance 3%). The optical measurements were performed with an integrating sphere and a spectrometer. The contact angles were measured with a drop shape analyzer. The nanostructures were characterized with scanning electron microscopy.

A multi-wavelength erbium-doped fiber laser incorporating an semiconductor optical amplifier (SOA) based on a tunable Mach-Zehnder interferometer (as a comb filter) is proposed. Wavelength-spacing can be continuously tuned and multi-wavelength lasing with wavelength spacings of 0.4 nm, 0.8 nm, and 1.6 nm is demonstrated. The output of the proposed multi-wavelength laser is rather stable at room temperature and the output spectra can be adjusted by controlling the bias current of the SOA and the power of the pump laser diode.

We demonstrate a Fourier domain mode-locked laser based on lanthanum-codoped bismuth-based erbium-doped fiber (Bi-EDF) for swept source optical coherence tomography (SS-OCT) imaging. Raman amplification is incorporated to suppress the gain competition and homogenous linewidth broadening effects of Bi-EDF. A wavelength sweeping bandwidth of 81 nm is generated under stable operation. Therefore, in vivo OCT imaging of human finger print and orange slices is enabled and the results are also presented. This scheme paves the way for doped fiber amplifiers to be employed to generate ultra-wideband SSs for OCT applications.

A simple all-optical coherence-free microwave notch filter is proposed and experimentally demonstrated. The filter is based on remodulation scheme using a narrow-linewidth laser, an intensity electro-optic modulator, and a Sagnac fiber loop reflector to eliminate the coherent limitation and phase-induced intensity noise. Both Mach-Zehnder modulator and electroabsorption modulator are used in the microwave photonic filtering system, and different frequency responses are observed, respectively, in the experiment. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:993–995, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26687

We demonstrate a very high coincidence-to-accidental ratio of 673 using continuous-wave photon-pair generation in a silicon strip waveguide through spontaneous four-wave mixing. This result is obtained by employing on-chip photonic-crystal-based grating couplers for both low-loss fiber-to-chip coupling and on-chip suppression of generated spontaneous Raman scattering noise. We measure a minimum heralded second-order correlation of g(H)((2)) (0) = 0.12, demonstrating that our source operates in the single- photon regime with low noise. (C) 2017 The Japan Society of Applied Physics

In this letter, a novel approach for obtaining focal spots smaller than one-half wavelength of time-reversed waves is presented. By placing the extra designed transmitters in the near field of the original source in the first step of time reversal, the time-reversed waves, emitted by time-reversal mirrors, focus on the source location beyond the diffraction limit. The auxiliary sources do not exist in the reconstruction step, and the subwavelength focus is caused by superoscillation. The theoretical analysis of the phenomenon and numerical experiments in the finite-difference time-domain method are provided to demonstrate the proposed approach. The designed controllable sources can be incorporated into the subwavelength structures to further improve the super-resolution.

We present a polarization diversity circuit built on the silicon-on-insulator (SOI) platform, which can be fabricated by a simple process. The polarization diversity is based on two identical air-clad asymmetrical directional couplers, which simultaneously play the roles of polarization splitter and rotator. A silicon polarization diversity circuit with a single microring resonator is fabricated on the SOI platform. Only