101. Comparison of the electronic structures of AlN nanotips grown on p- and n-type Si substrates
- Author
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W. F. Pong, C. W. Pao, Kuei-Hsien Chen, Jinghua Guo, C. H. Chen, F. Z. Chien, C. F. Chen, Li-Chyong Chen, H. M. Tsai, J. W. Chiou, H. J. Lin, C. L. Dong, C. L. Chang, M.-H. Tsai, Shih Chen Shi, and I. H. Hong
- Subjects
Nanostructure ,Silicon ,Analytical chemistry ,chemistry.chemical_element ,Electronic structure ,Condensed Matter Physics ,XANES ,Spectral line ,Field electron emission ,Crystallography ,chemistry ,Density of states ,General Materials Science ,Absorption (electromagnetic radiation) - Abstract
Al and N K-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy (SPEM) and x-ray emission measurements were performed on AlN nanotips grown on p- and n-type Si substrates (p-AlN and n-AlN). Features and intensities in the Al and N K-edge XANES spectra of these AlN nanotips overall are similar. In contrast, the intensities of the valence-band SPEM spectra of p-AlN are apparently larger than those of n-AlN, which indicates that the valence-band density of states of p-AlN exceeds that of n-AlN. This result may be related to the observed enhancement of field-emission intensity of AlN nanotips grown on the p-type Si substrate.
- Published
- 2005
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