101. Single-atom manipulation on the Si(111)7 × 7 surface by the scanning tunneling microscope (STM)
- Author
-
M. Aono, D.H. Huang, J. Yoshinobu, and H. Uchida
- Subjects
Surface (mathematics) ,Materials science ,Silicon ,business.industry ,Chemistry ,Scanning tunneling spectroscopy ,Analytical chemistry ,Atom (order theory) ,chemistry.chemical_element ,Surfaces and Interfaces ,Condensed Matter Physics ,Molecular physics ,Electrochemical scanning tunneling microscope ,Surfaces, Coatings and Films ,law.invention ,Scanning probe microscopy ,law ,Atom ,Materials Chemistry ,Optoelectronics ,Voltage pulse ,Scanning tunneling microscope ,business - Abstract
Methods to manipulate single Si atoms on the Si(111)7 × 7 surface at room temperature, using a scanning tunneling microscope (STM) operated in ultrahigh vacuum, are reported. The extraction and redeposition of single Si atoms and the displacement of the redeposited Si atoms can be done with a W tip, if the tip is carefully cleaned, by applying a voltage pulse between tip and sample with its polarity, magnitude and duration being selected appropriately.
- Published
- 1993