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108. The properties of tris (8-hydroxyquinoline) aluminum organic light emitting diode with undoped zinc oxide anode layer.

109. ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions.

110. Extremely low temperature growth of ZnO by atomic layer deposition.

111. Morphology and luminescence properties of zinc oxide nanopowders doped with aluminum ions obtained by hydrothermal and vapor condensation methods.

112. Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation.

119. Optically detected magnetic resonance studies of neutron-transmutation-doped GaP.

120. Isolated iron and chromium as recombination centers in ZnS.

121. Deep acceptorlike recombination centers in bulk liquid encapsulated Czochralski GaP, studied with optically detected magnetic resonance.

122. Photoelectron paramagnetic resonance studies of the dynamical parameters of shallow donor states in ZnS lattice (ZnS:Sc, ZnS:Al).

123. Germanium-doped gallium phosphide obtained by neutron irradiation.

126. Soft x-ray absorption spectroscopy on Co doped ZnO : structural distortions and electronic structure

134. Optical Functions of Aluminum-Doped Zinc Oxide Layers Grown by Atomic Layer Deposition

137. White Light Using Phosphor Structure of ZrO2 Films with RE Prepared by Atomic Layer Deposition and Spin Coating.

139. ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure

140. Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

143. Control of development of gastrointestinal system in neonates

145. Onfluence of oxygen stoichiometry on transport, optical and magnetic properties of the room-temperature ferrimagnetic oxide semiconductor Fe_1.5Ti_0.5O_3-δ

149. Quantitative study of soybean-induced changes in proliferation and programmed cell death in the intestinal mucosa of young rats

150. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

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