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OBJECT The underlying mechanisms causing intracranial perianeurysmal edema (PAE) are still poorly understood. Since PAE is most frequently observed in giant intracranial aneurysms (GIAs), the authors designed a study to examine the occurrence of PAE in relation to the location, size, and partial thrombosis (PT) of GIAs along with the clinical impact of PAE. METHODS Magnetic resonance imaging data for patients with a diagnosis of unruptured GIA from the international multicenter Giant Intracranial Aneurysm Registry were retrospectively analyzed with regard to location and size of the GIA, PAE volume, and the presence of PT. The occurrence of PAE was correlated to clinical findings. RESULTS Imaging data for 69 GIAs were eligible for inclusion in this study. Perianeurysmal edema was observed in 33.3% of all cases, with the highest frequency in GIAs of the middle cerebral artery (MCA; 68.8%) and the lowest frequency in GIAs of the cavernous internal carotid artery (ICA; 0.0%). Independent predictors of PAE formation were GIA volume (OR 1.13, p = 0.02) and the occurrence of PT (OR 9.84, p = 0.04). Giant intracranial aneurysm location did not predict PAE occurrence. Giant aneurysms with PAE were larger than GIAs without PAE (p < 0.01), and GIA volume correlated with PAE volume (rs = 0.51, p = 0.01). Perianeurysmal edema had no influence on the modified Rankin Scale score (p = 0.30 or the occurrence of aphasia (p = 0.61) or hemiparesis (p = 0.82). CONCLUSIONS Perianeurysmal edema was associated with GIA size and the presence of PT. As no PAE was observed in cavernous ICA aneurysms, even though they exerted mass effect on the brain and also displayed PT, the dura mater may serve as a barrier protecting the brain from PAE formation.

Fragestellung: Der Einfluss nanoskaliger Strukturen auf die Osseointegration von Biomaterialien nimmt bei der Implantatentwicklung eine zentrale Rolle ein. In vorherigen Arbeiten konnten wir die Effekte verschiedener, starrer Nanostrukturen auf humane mesenchymale Stammzellen und Osteoblasten zeigen.[for full text, please go to the a.m. URL], Deutscher Kongress für Orthopädie und Unfallchirurgie (DKOU 2014)

Ga-rich (~ 10 at.%) Si and Ge films were fabricated by high-fluence Ga+ ion implantation through a SiO2 capping layer. The structure and the electrical transport properties of these films have been studied after flash-lamp [1-3] and rapid thermal annealing [4, 5]. Amorphous, Ga-rich nanoprecipitates are embedded in a heavily p-type doped semiconductor matrix [3, 4]. These nanoprecipitates become superconducting below critical temperatures up to 7 K. They can interact due to the proximity effect in the degenerately doped semiconductor matrix and form a random network of Josephson junctions. Small modifications of the junction properties, e.g. by annealing or current pulses, can dramatically change the electronic transport in the film. In particular, Ga-rich Si films show a wealth of low-temperature transport phenomena which have been known until now only from granular metals or high-temperature superconductors: superconductor-insulator transition, quasi-reentrant superconductivity and current-controlled sheet resistance [6, 7] . The possibility to prepare and modify Ga-rich Si and Ge films with microelectronics-compatible technology makes them interesting for both fundamental research on transport phenomena in nanostructured, disordered superconductors as well as for the integration of superconducting circuits into Si devices. [1] T. Herrmannsdörfer, V. Heera, O. Ignatchik, M. Uhlarz, et al., Phys. Rev. Lett.,2009, 102, 217003. [2] R. Skrotzki, T. Herrmannsdörfer, V. Heera, J. Fiedler, et. al., Low Temp. Phys., 2011, 37, 1098. [3] V. Heera, J. Fiedler, M. Naumann, R. Skrotzki, et al., Supercond. Sci. Technol., 2014, 27, 055025. [4] J. Fiedler, V. Heera, R. Skrotzki, T. Herrmannsdörfer, et. al., Phys. Rev. B, 2011, 83, 214504. [5] J. Fiedler, V. Heera, R. Skrotzki, T. Herrmannsdörfer, et. al., Phys. Rev. B, 2012, 85, 134530. [6] V. Heera, J. Fiedler, M. Voelskow, A. Mücklich, et al., Appl. Phys. Lett., 2012, 100, 262602 [7] V. Heera, J. Fiedler, R. Hübner, B. Schmidt, et al., New. J. Phys., 2013, 15, 083022

Ge films with a mean Ga content of about 8 at.% and 1 at.% hole concentration can be fabricated by ion implantation and subsequent flash-lamp annealing. The Ge:Ga films become superconducting below critical temperatures in the range between 1 and 2 K depending on the film resistance. The change of the macroscopic transport properties during step-wise surface etching can be described by a homogeneously doped layer model. However, the Ga distribution is extremely heterogeneous on the nanoscale. Atom-probe tomography analyses reveal the presence of Ga-rich precipitates with Ga clusters up to 10,000 atoms. Since no percolating Ga cluster exists, it can be supposed that the heavy doping of Ge enables a coherent superconducting state via the proximity effect.

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Die Erfindung beschreibt die Herstellung und den Aufbau einer Anordnung mit mindestens einer Raumladungszone, bei der sich im Bereich der Raumladungszone magnetische Polaronen stabil ausbilden. Weiterhin beschreibt die Erfindung, die Integration und die Verwendung der Anordnung in einem Spin-FET, in einem Spin-Ventil und in einer Spin-LED.

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Fragestellung: Multipotente mesenchymale Stromazellen (MSC) können aus verschiedenen adulten Geweben wie Knochenmark, Fettgewebe, Nabelschnur oder Knorpel isoliert und unter Differenzierungsbedingungen in unterschiedliche Zelltypen differenziert werden. Verschiedenen Studien zeigen, dass auch im[for full text, please go to the a.m. URL], Deutscher Kongress für Orthopädie und Unfallchirurgie (DKOU 2014)

Fragestellung: Ein Polytrauma geht häufig mit einer systemischen Inflammation einher, wobei die beiden proinflammatorischen Zytokine IL-1b und TNF-a eine wichtige Rolle spielen. Weiterhin wird diskutiert, dass es zu einer systemischen Mobilisierung multipotenter mesenchymaler Stromazellen (MSC)[for full text, please go to the a.m. URL], Deutscher Kongress für Orthopädie und Unfallchirurgie (DKOU 2013)

Fragestellung: Zur Verbesserung der Osseointegration von Biomaterialien werden diese zunehmend auf nanoskaliger Ebene untersucht.. Nachdem wir zeigen konnten, dass sich multipotente mesenchymale Stromazellen (MSC) und Osteoblasten durch Wechselwirkung mit verschiedenen nanoskalig strukturierten Oberflächen[for full text, please go to the a.m. URL], Deutscher Kongress für Orthopädie und Unfallchirurgie (DKOU 2013)

Zielstellung der Dissertation ist die detaillierte Analyse der Auswirkungen von supraleitenden Galliumausscheidungen auf das elektrische Transportverhalten hochdotierter Silizium- und Germaniumschichten. Dafür wird ein neues Verfahren zur Herstellung von supraleitenden Schichten in kommerziellen Silizium- und Germanium-Wafern mit Hilfe von Ionenimplantation und Kurzzeitausheilung entwickelt. Mittels Ionenimplantation durch eine dünne dielektrische Deckschicht wurden Galliumkonzentrationen weit über der Gleichgewichtslöslichkeit in die Silizium- und Germaniumsubstrate eingebracht. Kurzzeitausheilverfahren wurden verwendet, um die die Umverteilung des Galliums anzuregen. Die resultierende Galliumverteilung wurde analysiert und es konnte ein Modell entwickelt werden, welches die Ursache für die Ausbildung einer 10 nm dünnen Gallium-reichen Schichten an der Deckschicht/Halbleiter-Grenzfläche beschreibt. Übersteigt die Galliumkonzentration an der Grenzfläche den kritischen Wert von 15 at.%, können die Schichten bei Temperaturen unterhalb von 6 – 7 K supraleitend werden und zeigen damit eine ähnlich kritische Temperatur wie bereits untersuchte dünne amorphe Galliumfilme. Es wird somit erstmalig gezeigt, dass Gallium-reiche Ausscheidungen eine mit reinem Gallium vergleichbare kritische Temperatur haben. Der bisher häufig als Funktion der Schichtdicke erforschte Supraleiter-Isolator-Übergang konnte in den Schichten durch die Variation der Ausheilzeit hervorgerufen werden. Der normalleitende Schichtwiderstand ist als entscheidender Parameter für den Phasenübergang anzusehen. Da sich Gallium-reiche Ausscheidungen in Germanium wegen der geringen Differenz in Masse und Elektronenstruktur nur schwer nachweisen lassen, erfolgten die Strukturuntersuchungen hauptsächlich an Siliziumschichten. Die Ergebnisse dieses Modellsystems lassen sich zum großen Teil auf das Verhalten von Gallium in Germanium übertragen. Dieser Vergleich zeigt, dass außer der kritischen Temperatur alle elektrischen Eigenschaften der Gallium-reichen Schichten vom Substratmaterial abhängen. Supraleitung in Gallium-dotiertem Germanium wurde bisher nur bei Temperaturen unterhalb von 1 K beobachtet. Deshalb ist die kritische Temperatur ein geeigneter Parameter, um durch Dotierung hervorgerufene Supraleitung in Germanium von supraleitenden Ausscheidungen zu unterscheiden.

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Sufficient and stable read current is critical for the scalability of RRAM devices and designing of multilevel resistive switching devices. Here, we report that a remarkable increase of the current density and retention stability of Au/BiFeO3/Pt/Ti resistance random access memory (RRAM) devices can be achieved by low-energy (≤ 1 keV) Ar+ ion irradiation of BiFeO3 films. According to dynamic simulations and microstructure characterizations, oxygen atoms are preferentially sputtered from the BiFeO3 surface by Ar+ ion irradiation. The generation of oxygen vacancies acting as "dopants" modifies the Schottky contact of the Au/BiFeO3 interface and also may contribute to the formation of highly conductive "shunt" channels. These two effects are proposed as the reasons for the increased current density by more than two orders of magnitude and the improved retention stability. After Ar+ irradiation the retention stability was increased as the current density remaining after the retention time is improved from 7% to 85% of the initial value.

Si films sputter deposited on SiO2 substrates are enriched with Ga by ion implantation through a capping SiO2 layer. The morphology and the electrical transport properties of these films are investigated after rapid thermal annealing. Amorphous, Ga rich nanograins are embedded in a nanocrystalline Si matrix. The nanograins are metallic in the normal state and superconducting below 7 K. They form a random network of junctions to heavily doped Si crystallites. Small modifications of the junction properties, e.g. by annealing or current pulses, can dramatically change the electronic transport in the film. Ga rich Si films show a wealth of low-temperature transport phenomena which have been known until now only from granular metals or high temperature superconductors: superconductor-insulator transition, quasi-reentrant superconductivity and current controlled sheet resistance. The possibility to fabricate and tailor films of Ga rich Si with microelectronics compatible technology make it a promising material for the integration of superconducting circuits into Si devices.

A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar(+) irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO3 thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO3 surface are preferentially sputtered by Ar(+) ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO3 thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO3 thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.

Superconducting Ga-rich layers in Ge are fabricated by Ga implantation through a thin SiO2 cover layer. After annealing in a certain temperature window, Ga accumulation at the SiO2/Ge interface is observed. However, no Ga containing crystalline phases are identified. Thus it is suggested that the volatile Ga is stabilized in an amorphous mixture of all elements available at the interface. Electrical transport measurements reveal p-type metallic conductivity and superconducting transition. The superconducting properties of the samples with high Ga concentration at the interface change dramatically with etching the amorphous surface layer. A critical temperature of 6 K is measured before, whereas after etching it drops below 1 K. Therefore, one can conclude that the superconducting transport is based on two different layers: a Ga-rich amorphous phase at the interface and a heavily Ga-doped Ge layer. Finally, the comparison of the transport properties of Ga-rich Ge with those of Si demonstrates distinct differences between the interface layers and even the deeper lying doped regions.

We report on two unconventional routes of embedding superconducting nanolayers in a semiconducting environment. Ion implantation and subsequent annealing have been used for preparation of superconducting thin-films of Ga-doped germanium (Ge:Ga) [1] as well as 10 nm thin amorphous Ga-rich layers in silicon (Si:Ga) [2]. Structural investigations by means of XTEM, EDX, RBS/C, and SIMS have been performed in addition to low-temperature electrical transport and magnetization measurements. Regarding Ge:Ga, we unravel the evolution of Tc with charge-charrier concentration while for Si:Ga recently implemented microstructuring renders critical-current densities or more than 50 kA/cm2. Combined with a superconducting onset at around 10 K, this calls for onchip application in novel heterostructured devices.

Fragestellung: Die Funktion skelettaler Gewebe wird durch die extrazelluäre Matrix bestimmt, die aus einer Vielzahl organischer und anorganischer Einzelkomponenten mit nanoskaliger Größenordnung besteht. Im vorliegenden Projekt wurde untersucht, in wieweit sich multipotente mesenchymale[for full text, please go to the a.m. URL], Deutscher Kongress für Orthopädie und Unfallchirurgie (DKOU 2012)

Fragestellung: Die Einheilung orthopädischer Implantate und deren langzeitstabile Verankerung im Knochen sind zentrale Herausforderungen, die aufgrund zunehmender osteoporotischer Erkrankungen an Bedeutung gewinnen. Eine Strategie zur Verbesserung der Integeration im osteoporotischen Knochen stellt[for full text, please go to the a.m. URL], Deutscher Kongress für Orthopädie und Unfallchirurgie (DKOU 2012)

Ausgezeichnet mit dem DFCNA-Sonderpreis 2011 vom Dresdner Fraunhofer-Cluster Nanoanalytik im Rahmen der Vergabe der Dresdner Barkhausen-Poster-Preise

Die Erfindung beschreibt die Herstellung integrierter supraleitender Strukturen in Schaltungen und Schaltungselementen auf der Basis von Silizium- bzw. Germanium-Wafern durch Implementieren von Ausscheidungen, neuen chemischen Verbindungen oder einer Dotierung via Ionenimplantation und anschließender Kurzzeitausheilung. Vorteil dieser Strukturen ist die kostengünstige Produktion, und der höheren Leistungsdichte dieser Schaltungen bezüglich Transistorschaltungen. Diese Strukturen ermöglichen die Steuerung quantenmechanischer Interferenzerscheinungen mit Hilfe eines äußeren Magnetfeldes oder auf dem Chip erzeugten Magnetfeldes. Eine weitere Einsatzmöglichkeit bieten Logikschaltungen für das Quantum Computing.

Transparent conductive oxides (TCO), mainly In2O3:Sn (ITO), ZnO:Al (AZO) and SnO2:F (FTO) are widely used as transparent electrodes in flat panel displays, thin film solar cells and solid state lighting. The markets for the applications requiring large area electrodes are continuously growing recent years which drives the need for a cost-efficient replacement of conventional TCOs. In addition to a low cost, TiO2 offers unique combination of high refractive index, stability against humidity, the high chemical stability and the non-toxicity. The Nb or Ta doped TiO2 films epitaxially grown on crystalline substrates show electrical and optical properties which are comparable to those of conventional TCOs. However, using expensive crystalline substrates drastically limits applications. It is still a challenge to achieve low electrical resistivity polycrystalline TiO2 films as required for the most applications. Furthermore, it is not possible to get low resistivity in polycrystalline films by direct growth at elevated substrate temperature. Only a two-step approach containing the deposition of amorphous films followed by annealing in vacuum or hydrogen delivers films with resistivity values in the range of 1·10-3 cm. Even in that case, it is known that electrical, optical and structural properties evolution during crystallization, and crystallization itself, is strongly affected by the Ti/O ratio in the as-deposited films. Achieving required Ti/O ratio remains the main challenge. In order to address this problem, we studied the films formed on glass substrates without heating by DC magnetron sputtering of reduced TiO2-x:Ta ceramic targets followed by vacuum annealing. We achieved oxygen fine-tuning using a MS process in conjunction with a plasma feedback system. The optimum total pressure in combination with O2 fine tuning yielded the films with the best free electron mobility of 8 cm²/Vs. Our approach delivered films with an electrical resistivity in the range of 10-3 W cm, optical transmittance above 80% for 400nm thick films and electrical activation of Ta dopants up to 70% which is substantially higher than that of Al in ZnO. The temperature dependent hall effect measurements show a different behavior of the resistivity vs. temperature with varying film stoichiometry.

Superconductivity in elemental group-IV semiconductors is of great interest because of both, the high potential for new microelectronic applications and its underlying physics. To observe superconductivity at ambient pressure conditions high doping levels are needed. Sufficient doping concentrations of few at.% were achieved first for boron doped diamond [1]. Suprisingly also silicon, the basic material of todays microelectronic indurstry becomes superconducting below 0.6 K when heavily doped with boron [2]. In our previous work we used ion implantation and short-term annealing to fabricate superconducting Ga doped Ge layers with critical temperatures below 1 K [3]. The solid solubility is exceeded by far and therefore the presence of Ga clusters has to be excluded [4]. However the question arises, how superconducting precipitates influence the low- temperature transport properties. We demonstrate the possibility of embedding extrinsic superconducting nanolayers in commercial microelectronic Si wafers. Ga implantation (4x1016cm-2) through a 30 nm SiO2 cover layer is used because Ga itself is a superconducting element. Sturctural investigations by means of RBS/C and TEM reveal the stabilization of a Ga-rich layer at the SiO2/Si interfae after rapid thermal annealing (RTA). At defined RTA temperatures of 600 – 700°C this interface layer becomes superconducting [5,6]. Amorphous Ga has a critical temperature of 7 K which is comparable to the value of our Ga-rich interface layers. High critical magnetic fields up to 14 T and critical current densities as high as 50 kA/cm2 make the Si:Ga layers interesting for applications. These results in combination with investigations on similar prepared Ga-rich layers at SiO2/Ge interfaces imply that superconductivity driven by Ga clusters occurs at temperatures of 6 – 7K [7]. If in Ge the onset of superconductivity is below 1 K, it can clearly be attributed to a doping effect. Financial support by DFG (HE 2604/7-1) is gratefully acknowledged. [1] E. A. Ekimov et al., Nature 2004;428:542. [2] E. Bustarret et al., Nature 2006;444:465. [3] T. Herrmannsdörfer et al., Phys, Rev. Lett. 2009;102:217003. [4] V. Heera et al., J. Appl. Phys. 2010;107:053508. [5] R. Skrotzki et al., Appl. Phys. Lett. 2010;97:192505. [6] J. Fiedler et al., Phys. Rev. B 2011;83:214504. [7] J. Fiedler et al., Phys. Rev. B 2012;85:134530.

Superconductivity is a fascinating ground state of matter and has been discovered one century ago. A new debate about the fundamental physical background and technological potential of superconducting group-IV semiconductors occurred, since superconductivity at ambient pressure conditions was shown for boron doped diamond [1] and silicon [2]. These unusual superconductors open the way towards new microelectronic devices and applications. In our previous work, we used Ga-ion implantation and subsequent short-time annealing for creating highly Ga doped layers in Ge. [3] These layers show an intrinsic superconducting transition at temperatures below 1 K because of the high doping level. [4] In a next step we could show the feasibility to stabilize Ga-rich layers at SiO2/Si [5,6] and SiO2/Ge [7] interfaces by using a 30 nm SiO2 cover layer during implantation and annealing. The presented structural investigations by means of Rutherford Backscattering Spectrometry (RBS) and cross-sectional Transmission Electron Microscopy (XTEM) reveal the presence of a 10 nm thin, superconducting layer at the interfaces containing Ga-rich precipitates. In both cases the critical temperature increases to 7 K which is comparable to amorphous Ga and therefore enables the detailed investigation of the influence of superconducting precipitates on the superconducting properties of doped semiconductor layers. However, the previous investigations were done on 1 x 1 cm2 size samples. The possibility of fabricating superconducting microstructures in Si with standard microelectronic lithography will be shown. Theses microstructures still undergo a superconducting transition below 7 K. High critical magnetic fields in the range of 10 T and high critical current densities of 50 kA/cm2 were achieved. For applications in superconducting microelectronics a Josephson-Junction has to be implemented. [8] We plan to use a Focused Ion Beam (FIB) for this task. Details about the sample processing, layer microstructure and processing of superconducting microstructures will be presented. [1] E. A. Ekimov et al., Nature (London) 428 (2004) 542. [2] E. Bustarret et al., Nature 444 (2006) 465. [3] V. Heera et al., J. Appl. Phys. 107 (2010) 053508. [4] T. Herrmannsdörfer et al., Phys, Rev. Lett. 102 (2009) 217003. [5] R. Skrotzki et al., Appl. Phys. Lett. 97 (2010) 192505. [6] J. Fiedler et al., Phys. Rev. B 83 (2011) 214504. [7] J. Fiedler et al., Phys. Rev. B 85 (2012) 134530. [8] J. Q. You et al., Nature 474 (2011) 589.

Beginning in 2004, the interest in superconductivity of elemental group-IV semiconductors has been renewed because Ekimov et al. [1] showed that boron doped diamond could become superconducting at ambient pressure conditions. Besides fundamental physical background of driving a semiconductor into a superconducting state, the high potential for applications in new microelectronic devices is in the main focus. High doping levels are needed to observe superconductivity at ambient pressure conditions in elemental group-IV semiconductors. Gas immersion laser doping is used to fabricate superconducting boron doped silicon [2]. The possibility to use Ga-ion implantation and short-time annealing for creating superconducting Ga-doped Ge layers was shown in our previous work [3, 4]. These highly doped Ge-layers show an onset of superconductivity below 1 K. All doping techniques mentioned above exceed the equilibrium solid solubility limit by far and the question arises, whether the observed superconductivity is a doping effect or related to dopant clusters [5]. Especially if the doping element itself is a superconductor, like Ga in Ge, it was not clear how superconducting precipitates influence the low-temperature transport properties. To investigate these effects, we stabilized superconducting Ga-rich layers at SiO2/Si interfaces [6, 7]. Again, we have used ion implantation through a 30 nm thick SiO2 cover layer and rapid thermal annealing. The critical temperature of 7 K is comparable to the values obtained for amorphous Ga. Furthermore, high critical magnetic fields of 14 T and critical current densities of 50 kA/cm2 were achieved. With the results of the investigations discussed above, we could go one step further and fabricate similar Ga-rich layers at SiO2/Ge interfaces. Now it is possible to investigate selectively the influence of superconducting Ga-rich areas on the normal- and superconducting properties of Ga-doped Ge. It will be shown that the critical temperature changes dramatically while the critical magnetic field stays rather constant. The results of detailed microstructural investigations by means of XTEM and time-of-flight SIMS will be correlated with electrical properties. Finally, the presented results indicate that superconductivity with critical temperatures around 1 K can clearly be attributed to a doping effect. [1] E. A. Ekimov et al., Nature (London) 428 (2004) 542. [2] E. Bustarret et al., Nature 444 (2006) 465. [3] T. Herrmannsdörfer et al., Phys, Rev. Lett. 102 (2009) 217003. [4] V. Heera et al., J. Appl. Phys. 107 (2010) 053508. [5] N. Dubrovinskaia et al., PNAS 105 (2008) 11619. [6] R. Skrotzki et al., Appl. Phys. Lett. 97 (2010) 192505. [7] J. Fiedler et al., Phys. Rev. B 83 (2011) 214504.

To determine the frequency and consequences of neutralizing antibodies (NAbs) in patients with a first event suggestive of multiple sclerosis (MS) treated with interferon β-1b (IFNβ-1b).In the Betaseron/Betaferon in Newly Emerging MS For Initial Treatment (BENEFIT) study, patients were randomly assigned to 250 μg IFNβ-1b (Betaferon) or placebo subcutaneously every other day for 2 years or until diagnosis of clinically definite MS (CDMS). Patients were then offered open-label IFNβ-1b for up to 5 years. NAb status was assessed every 6 months by the myxovirus protein A induction assay. A titer20 NU/mL was considered NAb-positive, with low (≥20-100 NU/mL), medium (≥100-400 NU/mL), and high (≥400 NU/mL) titer categories. Here we examine early-treated patients, who received IFNβ-1b for up to 5 years.NAbs were measured in 277 of 292 early-treated patients and detected at least once in 88 (31.8%) patients, with 53 (60.2%) reverting to NAb negativity by year 5. Time to CDMS, time to confirmed disability progression, and annualized relapse rate did not differ between NAb-positive and NAb-negative patients or between periods of NAb positivity vs NAb negativity within patients. Increases in newly active lesion number and T2 lesion volume and conversion to McDonald MS were associated with NAb positivity and were more pronounced with higher titers.Although NAb positivity was associated with increased brain MRI activity, no discernible effects on clinical outcomes were found. This finding may reflect the greater power of MRI compared with clinical outcomes to detect the treatment effects of IFNβ-1b and may also result from temporal changes in NAb titers and biology.

Fragestellung: Das Einwachsen von Biomaterialien nach Implantation erfolgt zeitabhängig, wobei die frühen Zeitpunkte entscheidend für eine optimale Integration sind. Ziel der vorliegenden Arbeit ist es, unspezifische Proteinadsorption an Materialoberflächen zu verhindern und sele[for full text, please go to the a.m. URL], Deutscher Kongress für Orthopädie und Unfallchirurgie; 75. Jahrestagung der Deutschen Gesellschaft für Unfallchirurgie, 97. Tagung der Deutschen Gesellschaft für Orthopädie und Orthopädische Chirurgie, 52. Tagung des Berufsverbandes der Fachärzte für Orthopädie