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Van der Waals (vdW) heterostructures provide an effective strategy for exploring and expanding the potential applications of two-dimensional materials. In this study, we employ first-principles density functional theory (DFT) to investigate the geometric, electronic, and optical properties of MoGe2N4/AlN and MoSiGeN4/AlN vdW heterostructures. The stable MoGe2N4/AlN heterostructure exhibits an indirect band gap semiconductor with a type-I band gap arrangement, making it suitable for optoelectronic devices. Conversely, the stable MoSiGeN4/AlN heterostructure demonstrates various band gap arrangements depending on stacking modes, rendering it suitable for photocatalysis applications. Additionally, we analyze the effects of mechanical strain and vertical electric field on the electronic properties of these heterostructures. Our results indicate that both mechanical strain and vertical electric field can adjust the band gap. Notably, application of an electric field or mechanical strain leads to the transformation of the MoGe2N4/AlN heterostructure from a type-I to a type-II band alignment and from an indirect to a direct band transfer, while MoSiGeN4/AlN can transition from a type-II to a type-I band alignment. Type-II band alignment is considered a feasible scheme for photocatalysis, photocells, and photovoltaics. The discovery of these characteristics suggests that MoGe2N4/AlN and MoSiGeN4/AlN vdW heterostructures, despite their high lattice mismatch, hold promise as tunable optoelectronic materials with excellent performance in optoelectronic devices and photocatalysis. [ABSTRACT FROM AUTHOR]

The coupling of two-dimensional van der Waals heterojunctions is an effective way to achieve photocatalytic hydrogen production. This paper designs the MoxW1−xS2/AlN (x = 0, 0.25, 0.5, 0.75, 1) van der Waals heterojunction as a possible photocatalytic material. By using first-principles calculations, the effects of different Mo/W ratios on the band gap and photocatalytic hydrogen production performance of heterojunctions were investigated. The results show that the heterojunction is a direct Z-scheme photocatalyst and can achieve overall water splitting. By calculating the absorption spectrum, it is found that the heterojunction has a wider visible light absorption range when the bimetal is added, and there is still a strong absorption peak at 615 nm. With the increase of the Mo atom ratio, the absorption spectrum is red-shifted. The Gibbs free energy of the two-component Mo0.5W0.5S2/AlN heterojunction is only −0.028 eV. Our work provides a new perspective for the modification of 2D transition metal dichalcogenide photocatalytic heterojunctions. [ABSTRACT FROM AUTHOR]

In this study, the photocatalytic properties of AlN/TMO heterojunctions formed by coupling MoO2 and WO2 of transition metal oxides with AlN are studied in detail using first-principles calculations with the aim of finding efficient and low-cost photocatalysts for water splitting to produce hydrogen to reduce environmental pollution. The AIMD, phonon spectrum, and elastic constants demonstrated the thermodynamic, kinetic, and mechanical stabilities of the AlN/TMO heterojunction. The results showed that the AlN/MoO2 (1.55 eV) and AlN/WO2 (1.99 eV) heterojunctions have typical type-II energy band arrangements, which can effectively promote the separation of photogenerated electrons and hole pairs. Meanwhile, the AlN/MoO2 heterojunction showed excellent carrier mobilities (electron, 250.05 cm2 V−1 S−1 and hole, 45 467.07 cm2 V−1 S−1), which greatly exceeded those of each component. The AlN/WO2 heterojunction showed an excellent HER (−0.07 eV) performance, which was close to the expected value. For the AlN/WO2 heterojunction, a suitable band gap value, excellent HER, and other properties indicated that it has the potential to become a new candidate for photocatalytic water splitting. Our study enriches the theoretical research of transition metal oxide materials and wide-band gap materials by providing a reference direction for the design of reasonably high-quality photocatalysts. [ABSTRACT FROM AUTHOR]